Shigeru Umeno

Person

Sasebo-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method of predicting thermal donor formation behavior in silicon wa...
- Patent number 11,121,003
- Issue date Sep 14, 2021
- Sumco Corporation
- Kazuhisa Torigoe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon wafer
- Patent number 11,094,557
- Issue date Aug 17, 2021
- Sumco Corporation
- Toshiaki Ono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon wafer and method for manufacturing the same
- Patent number 10,177,008
- Issue date Jan 8, 2019
- Sumco Corporation
- Takashi Nakayama
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial silicon wafer and method for manufacturing same
- Patent number 9,412,622
- Issue date Aug 9, 2016
- Sumco Corporation
- Toshiaki Ono
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing silicon single crystal, silicon single crys...
- Patent number 8,771,415
- Issue date Jul 8, 2014
- Sumco Corporation
- Shigeru Umeno
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon single crystal wafer for IGBT and method for manufacturing...
- Patent number 8,617,311
- Issue date Dec 31, 2013
- Sumco Corporation
- Toshiaki Ono
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon wafer and method for producing the same
- Patent number 8,460,463
- Issue date Jun 11, 2013
- Sumco Corporation
- Shigeru Umeno
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon wafer and method for producing the same
- Patent number 8,231,852
- Issue date Jul 31, 2012
- Sumco Corporation
- Wataru Itou
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single crystal silicon wafer for insulated gate bipolar transistors...
- Patent number 8,105,436
- Issue date Jan 31, 2012
- Sumco Corporation
- Shigeru Umeno
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Silicon wafer for IGBT and method for producing same
- Patent number 7,846,252
- Issue date Dec 7, 2010
- Sumco Corporation
- Shigeru Umeno
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Single crystal silicon wafer for insulated gate bipolar transistors
- Patent number 7,629,054
- Issue date Dec 8, 2009
- Sumco Corporation
- Shigeru Umeno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of silicon wafer
- Patent number 7,563,319
- Issue date Jul 21, 2009
- Sumitomo Mitsubishi Silicon Corporation
- Shigeru Umeno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon wafer for IGBT and method for producing same
- Patent number 7,344,689
- Issue date Mar 18, 2008
- Sumco Corporation
- Shigeru Umeno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial wafer and method for manufacturing method
- Patent number 7,288,791
- Issue date Oct 30, 2007
- Sumitomo Mitsubishi Silicon Corporation
- Shigeru Umeno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for growing silicon single crystal
- Patent number 7,014,704
- Issue date Mar 21, 2006
- Sumitomo Mitsubishi Silicon Corporation
- Toshiaki Ono
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon single crystal, silicon wafer, and epitaxial wafer.
- Patent number 6,641,888
- Issue date Nov 4, 2003
- Sumitomo Mitsubishi Silicon Corporation
- Eiichi Asayama
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of manufacturing epitaxial wafer
- Patent number 6,365,461
- Issue date Apr 2, 2002
- Sumitomo Metal Industries, Ltd.
- Eiichi Asayama
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF PREDICTING THERMAL DONOR FORMATION BEHAVIOR IN SILICON WA...
- Publication number 20200105542
- Publication date Apr 2, 2020
- SUMCO CORPORATION
- Kazuhisa Torigoe
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON WAFER
- Publication number 20200083060
- Publication date Mar 12, 2020
- SUMCO CORPORATION
- Toshiaki ONO
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON WAFER AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20160322233
- Publication date Nov 3, 2016
- SUMCO CORPORATION
- Takashi NAKAYAMA
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL SILICON WAFER AND METHOD FOR MANUFACTURING SAME
- Publication number 20160042974
- Publication date Feb 11, 2016
- SUMCO CORPORATION
- Toshiaki ONO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF PRODUCING EPITAXIAL WAFER AS WELL AS EPITAXIAL WAFER
- Publication number 20110052923
- Publication date Mar 3, 2011
- SUMCO CORPORATION
- Shigeru Umeno
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON SINGLE CRYSTAL WAFER FOR IGBT AND METHOD FOR MANUFACTURING...
- Publication number 20100288184
- Publication date Nov 18, 2010
- Toshiaki ONO
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON WAFER AND METHOD FOR PRODUCING THE SAME
- Publication number 20100290971
- Publication date Nov 18, 2010
- Wataru Itou
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL, SILICON SINGLE CRYS...
- Publication number 20100111802
- Publication date May 6, 2010
- SUMCO CORPORATION
- Shigeru UMENO
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON WAFER AND METHOD FOR PRODUCING THE SAME
- Publication number 20100052103
- Publication date Mar 4, 2010
- SUMCO CORPORATION
- Shigeru Umeno
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON WAFER AND METHOD FOR PRODUCING THE SAME
- Publication number 20100051945
- Publication date Mar 4, 2010
- SUMCO CORPORATION
- Shigeru Umeno
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE CRYSTAL SILICON WAFER FOR INSULATED GATE BIPOLAR TRANSISTORS...
- Publication number 20090081856
- Publication date Mar 26, 2009
- SUMCO CORPORATION
- Shigeru Umeno
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON WAFER FOR IGBT AND METHOD FOR PRODUCING SAME
- Publication number 20080102287
- Publication date May 1, 2008
- SUMCO CORPORATION
- Shigeru Umeno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon single crystal wafer for IGBT and method for manufacturing...
- Publication number 20070193501
- Publication date Aug 23, 2007
- SUMCO CORPORATION
- Toshiaki Ono
- C30 - CRYSTAL GROWTH
Information Patent Application
Single crystal silicon wafer for insulated gate bipolar transistors...
- Publication number 20070186845
- Publication date Aug 16, 2007
- Shigeru Umeno
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon wafer for IGBT and method for producing same
- Publication number 20070000427
- Publication date Jan 4, 2007
- Shigeru Umeno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Manufacturing method of silicon wafer
- Publication number 20050229842
- Publication date Oct 20, 2005
- Shigeru Umeno
- C30 - CRYSTAL GROWTH
Information Patent Application
Epitaxial wafer and method for manufacturing method
- Publication number 20050035349
- Publication date Feb 17, 2005
- Shigeru Umeno
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for growing silicon single crystal
- Publication number 20040244674
- Publication date Dec 9, 2004
- Toshiaki Ono
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon single crystal, silicon wafer, and epitaxial wafer
- Publication number 20020142171
- Publication date Oct 3, 2002
- SUMITOMO METAL INDUSTRIES, LTD.
- Eiichi Asayama
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon single crystal, silicon wafer, and epitaxial wafer
- Publication number 20020142170
- Publication date Oct 3, 2002
- SUMITOMO METAL INDUSTRIES, LTD.
- Eiichi Asayama
- C30 - CRYSTAL GROWTH

Shigeru Umeno

Person

Patents Grantslast 30 patents

Method of predicting thermal donor formation behavior in silicon wa...

Silicon wafer

Silicon wafer and method for manufacturing the same

Epitaxial silicon wafer and method for manufacturing same

Method of manufacturing silicon single crystal, silicon single crys...

Silicon single crystal wafer for IGBT and method for manufacturing...

Silicon wafer and method for producing the same

Silicon wafer and method for producing the same

Single crystal silicon wafer for insulated gate bipolar transistors...

Silicon wafer for IGBT and method for producing same

Single crystal silicon wafer for insulated gate bipolar transistors

Manufacturing method of silicon wafer

Silicon wafer for IGBT and method for producing same

Epitaxial wafer and method for manufacturing method

Method for growing silicon single crystal

Silicon single crystal, silicon wafer, and epitaxial wafer.

Method of manufacturing epitaxial wafer

Patents Applicationslast 30 patents

METHOD OF PREDICTING THERMAL DONOR FORMATION BEHAVIOR IN SILICON WA...

SILICON WAFER

SILICON WAFER AND METHOD FOR MANUFACTURING THE SAME

EPITAXIAL SILICON WAFER AND METHOD FOR MANUFACTURING SAME

METHOD OF PRODUCING EPITAXIAL WAFER AS WELL AS EPITAXIAL WAFER

SILICON SINGLE CRYSTAL WAFER FOR IGBT AND METHOD FOR MANUFACTURING...

SILICON WAFER AND METHOD FOR PRODUCING THE SAME

METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL, SILICON SINGLE CRYS...

SILICON WAFER AND METHOD FOR PRODUCING THE SAME

SILICON WAFER AND METHOD FOR PRODUCING THE SAME

SINGLE CRYSTAL SILICON WAFER FOR INSULATED GATE BIPOLAR TRANSISTORS...

SILICON WAFER FOR IGBT AND METHOD FOR PRODUCING SAME

Silicon single crystal wafer for IGBT and method for manufacturing...

Single crystal silicon wafer for insulated gate bipolar transistors...

Silicon wafer for IGBT and method for producing same

Manufacturing method of silicon wafer

Epitaxial wafer and method for manufacturing method

Method for growing silicon single crystal

Silicon single crystal, silicon wafer, and epitaxial wafer

Silicon single crystal, silicon wafer, and epitaxial wafer