Shihsheng Chang

Person

Albany, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Forming a semiconductor device using a protective layer
- Patent number 12,266,534
- Issue date Apr 1, 2025
- Tokyo Electron Limited
- Shihsheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for filling recessed features in semiconductor devices with...
- Patent number 12,237,216
- Issue date Feb 25, 2025
- Tokyo Electron Limited
- Kai-Hung Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technologies for high aspect ratio carbon etching with inserted cha...
- Patent number 12,040,176
- Issue date Jul 16, 2024
- Tokyo Electron Limited
- Shihsheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for highly anisotropic etching of titanium oxide spacer usin...
- Patent number 12,009,211
- Issue date Jun 11, 2024
- Tokyo Electron Limited
- Ya-Ming Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for patterning a dielectric layer
- Patent number 11,756,790
- Issue date Sep 12, 2023
- Tokyo Electron Limited
- Yen-Tien Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-atomic layer deposition (ALD) method of forming sidewall passiv...
- Patent number 11,651,967
- Issue date May 16, 2023
- Tokyo Electron Limited
- Shihsheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cyclic plasma etching of carbon-containing materials
- Patent number 11,538,692
- Issue date Dec 27, 2022
- Tokyo Electron Limited
- Yunho Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and systems for etching silicon cyanide (SiCN) with multi-c...
- Patent number 11,227,774
- Issue date Jan 18, 2022
- Tokyo Electron Limited
- Shihsheng Chang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Non-atomic layer deposition (ALD) method of forming sidewall passiv...
- Patent number 11,195,723
- Issue date Dec 7, 2021
- Tokyo Electron Limited
- Shihsheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of anisotropically etching adjacent lines with multi-color s...
- Patent number 10,937,659
- Issue date Mar 2, 2021
- Tokyo Electron Limited
- Shihsheng Chang
- B81 - MICRO-STRUCTURAL TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
Method for Processing a Substrate
- Publication number 20240087891
- Publication date Mar 14, 2024
- TOKYO ELECTRON LIMITED
- Eric Chih-Fang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Variable Hardness Amorphous Carbon Mask
- Publication number 20230343592
- Publication date Oct 26, 2023
- TOKYO ELECTRON LIMITED
- Shihsheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods To Provide Anisotropic Etching Of Metal Hard Masks Using A...
- Publication number 20230343554
- Publication date Oct 26, 2023
- TOKYO ELECTRON LIMITED
- Ya-Ming Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method For Improving Etch Rate And Critical Dimension Uniformity Wh...
- Publication number 20230343598
- Publication date Oct 26, 2023
- TOKYO ELECTRON LIMITED
- Shihsheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNOLOGIES FOR HIGH ASPECT RATIO CARBON ETCHING WITH INSERTED CHA...
- Publication number 20230326737
- Publication date Oct 12, 2023
- TOKYO ELECTRON LIMITED
- Shihsheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method For Highly Anisotropic Etching Of Titanium Oxide Spacer Usin...
- Publication number 20230154752
- Publication date May 18, 2023
- TOKYO ELECTRON LIMITED
- Ya-Ming Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Cyclic Plasma Etching Of Carbon-Containing Materials
- Publication number 20220375759
- Publication date Nov 24, 2022
- TOKYO ELECTRON LIMITED
- Yunho Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SACRIFICIAL GATE CAPPING LAYER FOR GATE PROTECTION
- Publication number 20220359718
- Publication date Nov 10, 2022
- TOKYO ELECTRON LIMITED
- Yun HAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FILLING RECESSED FEATURES IN SEMICONDUCTOR DEVICES WITH...
- Publication number 20220301930
- Publication date Sep 22, 2022
- TOKYO ELECTRON LIMITED
- Kai-Hung Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PATTERNING A DIELECTRIC LAYER
- Publication number 20220293419
- Publication date Sep 15, 2022
- TOKYO ELECTRON LIMITED
- Yen-Tien Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Contact Etch Stop Layer with Improved Etch Stop Capability
- Publication number 20220246747
- Publication date Aug 4, 2022
- TOKYO ELECTRON LIMITED
- Yun Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONFORMAL AMORPHOUS CARBON LAYER ETCH WITH SIDE-WALL PASSIVATION
- Publication number 20220199410
- Publication date Jun 23, 2022
- TOKYO ELECTRON LIMITED
- Du Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-Atomic Layer Deposition (ALD) Method of Forming Sidewall Passiv...
- Publication number 20220189781
- Publication date Jun 16, 2022
- TOKYO ELECTRON LIMITED
- Shihsheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING A SEMICONDUCTOR DEVICE USING A PROTECTIVE LAYER
- Publication number 20210391181
- Publication date Dec 16, 2021
- TOKYO ELECTRON LIMITED
- Shihsheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND SYSTEMS FOR ETCHING SILICON CYANIDE (SICN) WITH MULTI-C...
- Publication number 20210172062
- Publication date Jun 10, 2021
- TOKYO ELECTRON LIMITED
- Shihsheng Chang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF ANISOTROPICALLY ETCHING ADJACENT LINES WITH MULTI-COLOR S...
- Publication number 20200328086
- Publication date Oct 15, 2020
- TOKYO ELECTRON LIMITED
- Shihsheng Chang
- H01 - BASIC ELECTRIC ELEMENTS

Shihsheng Chang

Person

Patents Grantslast 30 patents

Forming a semiconductor device using a protective layer

Method for filling recessed features in semiconductor devices with...

Technologies for high aspect ratio carbon etching with inserted cha...

Method for highly anisotropic etching of titanium oxide spacer usin...

Method for patterning a dielectric layer

Non-atomic layer deposition (ALD) method of forming sidewall passiv...

Cyclic plasma etching of carbon-containing materials

Methods and systems for etching silicon cyanide (SiCN) with multi-c...

Non-atomic layer deposition (ALD) method of forming sidewall passiv...

Method of anisotropically etching adjacent lines with multi-color s...

Patents Applicationslast 30 patents

Method for Processing a Substrate

Variable Hardness Amorphous Carbon Mask

Methods To Provide Anisotropic Etching Of Metal Hard Masks Using A...

Method For Improving Etch Rate And Critical Dimension Uniformity Wh...

TECHNOLOGIES FOR HIGH ASPECT RATIO CARBON ETCHING WITH INSERTED CHA...

Method For Highly Anisotropic Etching Of Titanium Oxide Spacer Usin...

Cyclic Plasma Etching Of Carbon-Containing Materials

SACRIFICIAL GATE CAPPING LAYER FOR GATE PROTECTION

METHOD FOR FILLING RECESSED FEATURES IN SEMICONDUCTOR DEVICES WITH...

METHOD FOR PATTERNING A DIELECTRIC LAYER

Contact Etch Stop Layer with Improved Etch Stop Capability

CONFORMAL AMORPHOUS CARBON LAYER ETCH WITH SIDE-WALL PASSIVATION

Non-Atomic Layer Deposition (ALD) Method of Forming Sidewall Passiv...

FORMING A SEMICONDUCTOR DEVICE USING A PROTECTIVE LAYER

METHODS AND SYSTEMS FOR ETCHING SILICON CYANIDE (SICN) WITH MULTI-C...

METHOD OF ANISOTROPICALLY ETCHING ADJACENT LINES WITH MULTI-COLOR S...