Shine C. Chung

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Programmable resistance memory on wide-bandgap semiconductor techno...
- Patent number 12,002,527
- Issue date Jun 4, 2024
- Attopsemi Technology Co., Ltd.
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Grant
One-time programmable memories with ultra-low power read operation...
- Patent number 11,615,859
- Issue date Mar 28, 2023
- Attopsemi Technology Co., Ltd.
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Grant
One-time programmable memories with low power read operation and no...
- Patent number 11,062,786
- Issue date Jul 13, 2021
- Attopsemi Technology Co., Ltd.
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Grant
One-time programmable memory using gate-all-around structures
- Patent number 11,011,577
- Issue date May 18, 2021
- Attopsemi Technology Co., Ltd.
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Grant
Fully testible OTP memory
- Patent number 10,923,204
- Issue date Feb 16, 2021
- Attopsemi Technology Co., Ltd.
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Grant
Programmable resistance memory on thin film transistor technology
- Patent number 10,916,317
- Issue date Feb 9, 2021
- Attopsemi Technology Co., Ltd.
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Grant
Programmable resistive memory formed by bit slices from a standard...
- Patent number 10,770,160
- Issue date Sep 8, 2020
- Attopsemi Technology Co., Ltd.
- Shine C. Chung
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Programmable resistive memories with low power read operation and n...
- Patent number 10,726,914
- Issue date Jul 28, 2020
- Attopsemi Technology Co. LTD.
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Grant
One-time programmable devices using gate-all-around structures
- Patent number 10,586,832
- Issue date Mar 10, 2020
- Attopsemi Technology Co., Ltd.
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Grant
Programmable resistive device and memory using diode as selector
- Patent number 10,586,593
- Issue date Mar 10, 2020
- Attopsemi Technology Co., Ltd.
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Grant
Low power read operation for programmable resistive memories
- Patent number 10,535,413
- Issue date Jan 14, 2020
- Attopsemi Technology Co., Ltd.
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Grant
System and method for concurrently checking availability of data in...
- Patent number 10,310,976
- Issue date Jun 4, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shine Chung
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
One-time programmable devices having program selector for electrica...
- Patent number 10,249,379
- Issue date Apr 2, 2019
- Attopsemi Technology Co., Ltd.
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Grant
OTP memory with high data security
- Patent number 10,229,746
- Issue date Mar 12, 2019
- Attopsemi Technology Co., Ltd.
- Shine C. Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
One-time programmable devices having a semiconductor fin structure...
- Patent number 10,192,615
- Issue date Jan 29, 2019
- Attopsemi Technology Co., Ltd.
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Grant
Method and structure for reliable electrical fuse programming
- Patent number 10,127,992
- Issue date Nov 13, 2018
- Attopsemi Technology Co., Ltd.
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Grant
Programmable resistive devices using Finfet structures for selectors
- Patent number 9,881,970
- Issue date Jan 30, 2018
- Attopsemi Technology Co. LTD.
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated OTP memory for providing MTP memory
- Patent number 9,824,768
- Issue date Nov 21, 2017
- Attopsemi Technology Co., LTD
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Grant
Programmable resistive device and memory using diode as selector
- Patent number 9,818,478
- Issue date Nov 14, 2017
- Attopsemi Technology Co., LTD
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Grant
One-time programmable device with integrated heat sink
- Patent number 9,767,915
- Issue date Sep 19, 2017
- Attopsemi Technology Co., LTD
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Grant
One-time programmable memory devices using FinFET technology
- Patent number 9,754,679
- Issue date Sep 5, 2017
- Attopsemi Technology Co., Ltd.
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Grant
Method and structure for reliable electrical fuse programming
- Patent number 9,711,237
- Issue date Jul 18, 2017
- Attopsemi Technology Co., Ltd.
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Grant
Circuit and system of using FinFET for building programmable resist...
- Patent number 9,548,109
- Issue date Jan 17, 2017
- Attopsemi Technology Co., Ltd.
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Grant
Circuit and system of a high density anti-fuse
- Patent number 9,496,265
- Issue date Nov 15, 2016
- Attopsemi Technology Co., Ltd.
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Grant
Method and system of programmable resistive devices with read capab...
- Patent number 9,496,033
- Issue date Nov 15, 2016
- Attopsemi Technology Co., Ltd.
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Grant
Circuit and system of using junction diode as program selector for...
- Patent number 9,478,306
- Issue date Oct 25, 2016
- Attopsemi Technology Co., Ltd.
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Grant
One-time programmable memory devices using FinFET technology
- Patent number 9,460,807
- Issue date Oct 4, 2016
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Grant
Circuit and system of using junction diode as program selector for...
- Patent number 9,431,127
- Issue date Aug 30, 2016
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Grant
System and method of a novel redundancy scheme for OTP
- Patent number 9,412,473
- Issue date Aug 9, 2016
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Grant
Programmably reversible resistive device cells using CMOS logic pro...
- Patent number 9,385,162
- Issue date Jul 5, 2016
- Shine C. Chung
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
PHYSICALLY UNCLONABLE FUNCTION PRODUCED USING OTP MEMORY
- Publication number 20220385486
- Publication date Dec 1, 2022
- Attopsemi Technology Co., LTD
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAMMABLE RESISTANCE MEMORY ON WIDE-BANDGAP SEMICONDUCTOR TECHNO...
- Publication number 20220238171
- Publication date Jul 28, 2022
- Attopsemi Technology Co., LTD
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Application
ONE-TIME PROGRAMMABLE MEMORIES WITH ULTRA-LOW POWER READ OPERATION...
- Publication number 20210343355
- Publication date Nov 4, 2021
- Attopsemi Technology Co., LTD
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Application
ONE-TIME PROGRAMMABLE MEMORIES WITH LOW POWER READ OPERATION AND NO...
- Publication number 20200350031
- Publication date Nov 5, 2020
- Attopsemi Technology, Co., LTD
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAMMABLE RESISTANCE MEMORY ON THIN FILM TRANSISTOR TECHNOLOGY
- Publication number 20200219574
- Publication date Jul 9, 2020
- Attopsemi Technology, Co., LTD
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Application
ONE-TIME PROGRAMMABLE MEMORY USING GATE-ALL-AROUND STRUCTURES
- Publication number 20200194499
- Publication date Jun 18, 2020
- Attopsemi Technology, Co., LTD
- Shine C. Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROGRAMMABLE RESISTIVE MEMORIES WITH LOW POWER READ OPERATION AND N...
- Publication number 20190392896
- Publication date Dec 26, 2019
- Attopsemi Technology, Co., LTD
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Application
FULLY TESTIBLE OTP MEMORY
- Publication number 20190189230
- Publication date Jun 20, 2019
- Attopsemi Technology Co., LTD
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAMMABLE RESISTIVE MEMORY FORMED BY BIT SLICES FROM A STANDARD...
- Publication number 20190164619
- Publication date May 30, 2019
- Attopsemi Technology Co., LTD
- Shine C. Chung
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ONE-TIME PROGRAMMABLE DEVICES USING GATE-ALL-AROUND STRUCTURES
- Publication number 20190165045
- Publication date May 30, 2019
- Attopsemi Technology Co., LTD
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Application
LOW POWER READ OPERATION FOR PROGRAMMABLE RESISTIVE MEMORIES
- Publication number 20180301198
- Publication date Oct 18, 2018
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Application
ONE-TIME PROGRAMMABLE DEVICES USING FINFET STRUCTURES
- Publication number 20180174650
- Publication date Jun 21, 2018
- Attopsemi Technology Co., LTD
- Shine C. Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROGRAMMABLE RESISTIVE DEVICE AND MEMORY USING DIODE AS SELECTOR
- Publication number 20180075906
- Publication date Mar 15, 2018
- Attopsemi Technology Co., LTD
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Application
OTP MEMORY WITH HIGH DATA SECURITY
- Publication number 20180005703
- Publication date Jan 4, 2018
- Attopsemi Technology Co., LTD
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Application
Method and Structure for Reliable Electrical Fuse Programming
- Publication number 20170140835
- Publication date May 18, 2017
- Attopsemi Technology Co., LTD
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD AND STRUCTURE FOR RELIABLE ELECTRICAL FUSE PROGRAMMING
- Publication number 20170133101
- Publication date May 11, 2017
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Application
ONE-TIME PROGRAMMABLE DEVICES USING JUNCTION DIODE AS PROGRAM SELEC...
- Publication number 20170133102
- Publication date May 11, 2017
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Application
Finfet Structures for Programmable Resistive Devices
- Publication number 20170110512
- Publication date Apr 20, 2017
- Attopsemi Technology Co., LTD
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Application
ONE-TIME PROGRAMMABLE MEMORY DEVICES USING FinFET TECHNOLOGY
- Publication number 20170062071
- Publication date Mar 2, 2017
- Attopsemi Technology Co., LTD
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Application
One-Time Programmable Device with Integrated Heat Sink
- Publication number 20170047126
- Publication date Feb 16, 2017
- Attopsemi Technology Co., LTD
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Application
Intergrated OTP Memory for Providing MTP Memory
- Publication number 20160276043
- Publication date Sep 22, 2016
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Application
Circuit and Method for Power-On Reset of an Integrated Circuit
- Publication number 20160191041
- Publication date Jun 30, 2016
- Shine C. Chung
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Method and System of programmable resistive devices with Read Capab...
- Publication number 20160071582
- Publication date Mar 10, 2016
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Application
System and method of a novel redundancy scheme for OTP
- Publication number 20160019983
- Publication date Jan 21, 2016
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Application
System and Method for Concurrently Checking Availability of Data in...
- Publication number 20150363314
- Publication date Dec 17, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shine Chung
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
LOW-PIN-COUNT NON-VOLATILE MEMORY INTERFACE WITH SOFT PROGRAMMING C...
- Publication number 20150310927
- Publication date Oct 29, 2015
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Application
Circuit and System of Using Junction Diode as Program Selector for...
- Publication number 20150294732
- Publication date Oct 15, 2015
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Application
ONE-TIME PROGRAMMABLE MEMORY DEVICES USING FinFET TECHNOLOGY
- Publication number 20150187431
- Publication date Jul 2, 2015
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Application
Low-Pin-Count Non-Volatile Memory Interface for 3D IC
- Publication number 20150170759
- Publication date Jun 18, 2015
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Application
Low-Pin-Count Non-Volatile Memory Interface
- Publication number 20150078060
- Publication date Mar 19, 2015
- Shine C. Chung
- G11 - INFORMATION STORAGE

Shine C. Chung

Person

Patents Grantslast 30 patents

Programmable resistance memory on wide-bandgap semiconductor techno...

One-time programmable memories with ultra-low power read operation...

One-time programmable memories with low power read operation and no...

One-time programmable memory using gate-all-around structures

Fully testible OTP memory

Programmable resistance memory on thin film transistor technology

Programmable resistive memory formed by bit slices from a standard...

Programmable resistive memories with low power read operation and n...

One-time programmable devices using gate-all-around structures

Programmable resistive device and memory using diode as selector

Low power read operation for programmable resistive memories

System and method for concurrently checking availability of data in...

One-time programmable devices having program selector for electrica...

OTP memory with high data security

One-time programmable devices having a semiconductor fin structure...

Method and structure for reliable electrical fuse programming

Programmable resistive devices using Finfet structures for selectors

Integrated OTP memory for providing MTP memory

Programmable resistive device and memory using diode as selector

One-time programmable device with integrated heat sink

One-time programmable memory devices using FinFET technology

Method and structure for reliable electrical fuse programming

Circuit and system of using FinFET for building programmable resist...

Circuit and system of a high density anti-fuse

Method and system of programmable resistive devices with read capab...

Circuit and system of using junction diode as program selector for...

One-time programmable memory devices using FinFET technology

Circuit and system of using junction diode as program selector for...

System and method of a novel redundancy scheme for OTP

Programmably reversible resistive device cells using CMOS logic pro...

Patents Applicationslast 30 patents

PHYSICALLY UNCLONABLE FUNCTION PRODUCED USING OTP MEMORY

PROGRAMMABLE RESISTANCE MEMORY ON WIDE-BANDGAP SEMICONDUCTOR TECHNO...

ONE-TIME PROGRAMMABLE MEMORIES WITH ULTRA-LOW POWER READ OPERATION...

ONE-TIME PROGRAMMABLE MEMORIES WITH LOW POWER READ OPERATION AND NO...

PROGRAMMABLE RESISTANCE MEMORY ON THIN FILM TRANSISTOR TECHNOLOGY

ONE-TIME PROGRAMMABLE MEMORY USING GATE-ALL-AROUND STRUCTURES

PROGRAMMABLE RESISTIVE MEMORIES WITH LOW POWER READ OPERATION AND N...

FULLY TESTIBLE OTP MEMORY

PROGRAMMABLE RESISTIVE MEMORY FORMED BY BIT SLICES FROM A STANDARD...

ONE-TIME PROGRAMMABLE DEVICES USING GATE-ALL-AROUND STRUCTURES

LOW POWER READ OPERATION FOR PROGRAMMABLE RESISTIVE MEMORIES

ONE-TIME PROGRAMMABLE DEVICES USING FINFET STRUCTURES

PROGRAMMABLE RESISTIVE DEVICE AND MEMORY USING DIODE AS SELECTOR

OTP MEMORY WITH HIGH DATA SECURITY

Method and Structure for Reliable Electrical Fuse Programming

METHOD AND STRUCTURE FOR RELIABLE ELECTRICAL FUSE PROGRAMMING

ONE-TIME PROGRAMMABLE DEVICES USING JUNCTION DIODE AS PROGRAM SELEC...

Finfet Structures for Programmable Resistive Devices

ONE-TIME PROGRAMMABLE MEMORY DEVICES USING FinFET TECHNOLOGY

One-Time Programmable Device with Integrated Heat Sink

Intergrated OTP Memory for Providing MTP Memory

Circuit and Method for Power-On Reset of an Integrated Circuit

Method and System of programmable resistive devices with Read Capab...

System and method of a novel redundancy scheme for OTP

System and Method for Concurrently Checking Availability of Data in...

LOW-PIN-COUNT NON-VOLATILE MEMORY INTERFACE WITH SOFT PROGRAMMING C...

Circuit and System of Using Junction Diode as Program Selector for...

ONE-TIME PROGRAMMABLE MEMORY DEVICES USING FinFET TECHNOLOGY

Low-Pin-Count Non-Volatile Memory Interface for 3D IC

Low-Pin-Count Non-Volatile Memory Interface