Shriram Shivaraman

Person

Hillsboro, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Transition metal dichalcogenide (TMD) layer stack for transistor ap...
- Patent number 12,125,895
- Issue date Oct 22, 2024
- Intel Corporation
- Chelsey Dorow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer crystalline back gated thin film transistor
- Patent number 12,119,409
- Issue date Oct 15, 2024
- Intel Corporation
- Van H. Le
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric capacitors and methods of fabrication
- Patent number 12,048,165
- Issue date Jul 23, 2024
- Intel Corporation
- Nazila Haratipour
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-dielectric gate stack for crystalline thin film transistors
- Patent number 12,009,433
- Issue date Jun 11, 2024
- Intel Corporation
- Van H. Le
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film transistors with spacer controlled gate length
- Patent number 11,997,847
- Issue date May 28, 2024
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cells with ferroelectric capacitors separate from transistor...
- Patent number 11,980,037
- Issue date May 7, 2024
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
TMD inverted nanowire integration
- Patent number 11,935,956
- Issue date Mar 19, 2024
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge-transfer spacers for stacked nanoribbon 2D transistors
- Patent number 11,908,950
- Issue date Feb 20, 2024
- Intel Corporation
- Kirby Maxey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual gate control for trench shaped thin film transistors
- Patent number 11,862,728
- Issue date Jan 2, 2024
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structures with a metal oxide contact buffer and a metho...
- Patent number 11,843,058
- Issue date Dec 12, 2023
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical architecture of thin film transistors
- Patent number 11,843,054
- Issue date Dec 12, 2023
- Intel Corporation
- Van H. Le
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer crystalline back gated thin film transistor
- Patent number 11,764,306
- Issue date Sep 19, 2023
- Intel Corporation
- Van H. Le
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilayer high-k gate dielectric for a high performance logic tran...
- Patent number 11,742,407
- Issue date Aug 29, 2023
- Intel Corporation
- Seung Hoon Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film transistors having U-shaped features
- Patent number 11,721,735
- Issue date Aug 8, 2023
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned bitline and capacitor via formation
- Patent number 11,690,215
- Issue date Jun 27, 2023
- Intel Corporation
- Abhishek A. Sharma
Information Patent Grant
Thin film transistor with charge trap layer
- Patent number 11,658,222
- Issue date May 23, 2023
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FeFET with embedded conductive sidewall spacers and process for for...
- Patent number 11,653,502
- Issue date May 16, 2023
- Intel Corporation
- Shriram Shivaraman
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor material for resistive random access memory
- Patent number 11,588,102
- Issue date Feb 21, 2023
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact electrodes for vertical thin-film transistors
- Patent number 11,527,656
- Issue date Dec 13, 2022
- Intel Corporation
- Van H. Le
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial layers on contact electrodes for thin- film transistors
- Patent number 11,522,060
- Issue date Dec 6, 2022
- Intel Corporation
- Seung Hoon Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin-film transistors with vertical channels
- Patent number 11,450,750
- Issue date Sep 20, 2022
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire thin film transistors with textured semiconductors
- Patent number 11,417,775
- Issue date Aug 16, 2022
- Intel Corporation
- Shriram Shivaraman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical thin-film transistors between metal layers
- Patent number 11,417,770
- Issue date Aug 16, 2022
- Intel Corporation
- Abhishek Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact electrodes and dielectric structures for thin film transistors
- Patent number 11,398,560
- Issue date Jul 26, 2022
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Encapsulation layers of thin film transistors
- Patent number 11,387,366
- Issue date Jul 12, 2022
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film core-shell fin and nanowire transistors
- Patent number 11,380,797
- Issue date Jul 5, 2022
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold switching selector based memory
- Patent number 11,348,973
- Issue date May 31, 2022
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film transistors with spacer controlled gate length
- Patent number 11,296,087
- Issue date Apr 5, 2022
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical thin film transistors having self-aligned contacts
- Patent number 11,296,229
- Issue date Apr 5, 2022
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film transistors having U-shaped features
- Patent number 11,264,512
- Issue date Mar 1, 2022
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TMD INVERTED NANOWIRE INTEGRATION
- Publication number 20240186416
- Publication date Jun 6, 2024
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED PATTERNING OF PLATE LINES IN THREE-DIMENSIONAL FERROEL...
- Publication number 20240114693
- Publication date Apr 4, 2024
- Intel Corporation
- Christopher M. Neumann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE FERROELECTRIC DEPLOYMENT FOR SINGLE-TRANSISTOR, MULTIPLE-...
- Publication number 20240112714
- Publication date Apr 4, 2024
- Intel Corporation
- Nazila Haratipour
- G11 - INFORMATION STORAGE
Information Patent Application
HIGH ENDURANCE SUPER-LATTICE ANTI-FERROELECTRIC CAPACITORS
- Publication number 20240114695
- Publication date Apr 4, 2024
- Intel Corporation
- Sou-Chi Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAIN CELL USING PLANAR AND TRENCH FERROELECTRIC AND ANTI-FERROELECT...
- Publication number 20240114697
- Publication date Apr 4, 2024
- Intel Corporation
- Shriram SHIVARAMAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR STRUCTURE EMBEDDED WITHIN SOURCE OR DRAIN REGION
- Publication number 20240113101
- Publication date Apr 4, 2024
- Intel Corporation
- Sourav Dutta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMPROVED REPLACEMENT ELECTRODE PROCESS FOR 3D FERROELECTRIC MEMORY
- Publication number 20240114696
- Publication date Apr 4, 2024
- Intel Corporation
- Christopher Neumann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNOLOGIES FOR TRANSISTORS WITH A THIN-FILM FERROELECTRIC
- Publication number 20240113220
- Publication date Apr 4, 2024
- Intel Corporation
- Arnab Sen Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC CAPACITOR WITHIN BACKSIDE INTERCONNECT
- Publication number 20240114694
- Publication date Apr 4, 2024
- Intel Corporation
- Sourav Dutta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURES WITH A METAL OXIDE CONTACT BUFFER AND A METHO...
- Publication number 20240105854
- Publication date Mar 28, 2024
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL GATE CONTROL FOR TRENCH SHAPED THIN FILM TRANSISTORS
- Publication number 20240055531
- Publication date Feb 15, 2024
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACK-END-OF-LINE 2D TRANSISTOR
- Publication number 20240006521
- Publication date Jan 4, 2024
- Intel Corporation
- Chia-Ching LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACK-END-OF-LINE 2D MEMORY CELL
- Publication number 20240008290
- Publication date Jan 4, 2024
- Intel Corporation
- Chia-Ching LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LAYER CRYSTALLINE BACK GATED THIN FILM TRANSISTOR
- Publication number 20230352598
- Publication date Nov 2, 2023
- Intel Corporation
- Van H. Le
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICES WITH NITRIDE-BASED FERROELECTRIC MATERIALS
- Publication number 20230116719
- Publication date Apr 13, 2023
- Intel Corporation
- Elijah V. KARPOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES WITH TRANSITION METAL DICHALCOGENI...
- Publication number 20230101604
- Publication date Mar 30, 2023
- Intel Corporation
- Ashish Verma PENUMATCHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED 2D CMOS WITH INTER METAL LAYERS
- Publication number 20230101760
- Publication date Mar 30, 2023
- Intel Corporation
- Kevin P. O'BRIEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS WITH HIGH DIELECTRIC CONSTANT INTERFACIAL LAYERING
- Publication number 20230097184
- Publication date Mar 30, 2023
- Intel Corporation
- Sarah ATANASOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANGLED ETCH TO ENABLE TIN REMOVAL FROM SELECTED SIDEWALLS
- Publication number 20230102900
- Publication date Mar 30, 2023
- Intel Corporation
- Nafees A. KABIR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT GATING FOR 2D FIELD EFFECT TRANSISTORS
- Publication number 20230100451
- Publication date Mar 30, 2023
- Intel Corporation
- Kirby Maxey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL FERROELECTRIC RANDOM ACCESS MEMORY (3D FRAM) WITH...
- Publication number 20230101111
- Publication date Mar 30, 2023
- Intel Corporation
- Shriram SHIVARAMAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROSTRUCTURE MATERIAL CONTACTS FOR 2D TRANSISTORS
- Publication number 20230099814
- Publication date Mar 30, 2023
- Intel Corporation
- Kirby Maxey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICES WITH REDUCED READ DISTURBANCE EFFECTS
- Publication number 20230100860
- Publication date Mar 30, 2023
- Intel Corporation
- Sou-Chi CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THIN FILM TRANSISTORS HAVING A SPIN-ON 2D CHANNEL MATERIAL
- Publication number 20230098467
- Publication date Mar 30, 2023
- Intel Corporation
- Carl H. NAYLOR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC THREE-DIMENSIONAL MEMORY
- Publication number 20230097641
- Publication date Mar 30, 2023
- Intel Corporation
- Christopher M. NEUMANN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC RANDOM ACCESS MEMORY (FRAM) DEVICES WITH ENHANCED CAP...
- Publication number 20230097736
- Publication date Mar 30, 2023
- Intel Corporation
- Shriram SHIVARAMAN
- G11 - INFORMATION STORAGE
Information Patent Application
ENHANCED CAPACITOR ARCHITECTURE FOR FERROELECTRIC MEMORY DEVICES
- Publication number 20230099724
- Publication date Mar 30, 2023
- Intel Corporation
- Elijah V. KARPOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL REPLACEMENT PLATE LINE PROCESS FOR 3D-FERROELECTRIC RANDOM (3...
- Publication number 20220208777
- Publication date Jun 30, 2022
- Intel Corporation
- Nazila HARATIPOUR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D-FERROELECTRIC RANDOM (3D-FRAM) WITH BURIED TRENCH CAPACITORS
- Publication number 20220208778
- Publication date Jun 30, 2022
- Intel Corporation
- Nazila HARATIPOUR
- G11 - INFORMATION STORAGE
Information Patent Application
THIN FILM TRANSISTORS HAVING BORON NITRIDE INTEGRATED WITH 2D CHANN...
- Publication number 20220199799
- Publication date Jun 23, 2022
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS

Shriram Shivaraman

Person

Patents Grantslast 30 patents

Transition metal dichalcogenide (TMD) layer stack for transistor ap...

Multi-layer crystalline back gated thin film transistor

Ferroelectric capacitors and methods of fabrication

Multi-dielectric gate stack for crystalline thin film transistors

Thin film transistors with spacer controlled gate length

Memory cells with ferroelectric capacitors separate from transistor...

TMD inverted nanowire integration

Charge-transfer spacers for stacked nanoribbon 2D transistors

Dual gate control for trench shaped thin film transistors

Transistor structures with a metal oxide contact buffer and a metho...

Vertical architecture of thin film transistors

Multi-layer crystalline back gated thin film transistor

Multilayer high-k gate dielectric for a high performance logic tran...

Thin film transistors having U-shaped features

Self-aligned bitline and capacitor via formation

Thin film transistor with charge trap layer

FeFET with embedded conductive sidewall spacers and process for for...

Semiconductor material for resistive random access memory

Contact electrodes for vertical thin-film transistors

Epitaxial layers on contact electrodes for thin- film transistors

Thin-film transistors with vertical channels

Nanowire thin film transistors with textured semiconductors

Vertical thin-film transistors between metal layers

Contact electrodes and dielectric structures for thin film transistors

Encapsulation layers of thin film transistors

Thin film core-shell fin and nanowire transistors

Threshold switching selector based memory

Thin film transistors with spacer controlled gate length

Vertical thin film transistors having self-aligned contacts

Thin film transistors having U-shaped features

Patents Applicationslast 30 patents

TMD INVERTED NANOWIRE INTEGRATION

SELF-ALIGNED PATTERNING OF PLATE LINES IN THREE-DIMENSIONAL FERROEL...

SELECTIVE FERROELECTRIC DEPLOYMENT FOR SINGLE-TRANSISTOR, MULTIPLE-...

HIGH ENDURANCE SUPER-LATTICE ANTI-FERROELECTRIC CAPACITORS

GAIN CELL USING PLANAR AND TRENCH FERROELECTRIC AND ANTI-FERROELECT...

CAPACITOR STRUCTURE EMBEDDED WITHIN SOURCE OR DRAIN REGION

IMPROVED REPLACEMENT ELECTRODE PROCESS FOR 3D FERROELECTRIC MEMORY

TECHNOLOGIES FOR TRANSISTORS WITH A THIN-FILM FERROELECTRIC

FERROELECTRIC CAPACITOR WITHIN BACKSIDE INTERCONNECT

TRANSISTOR STRUCTURES WITH A METAL OXIDE CONTACT BUFFER AND A METHO...

DUAL GATE CONTROL FOR TRENCH SHAPED THIN FILM TRANSISTORS

BACK-END-OF-LINE 2D TRANSISTOR

BACK-END-OF-LINE 2D MEMORY CELL

MULTI-LAYER CRYSTALLINE BACK GATED THIN FILM TRANSISTOR

MEMORY DEVICES WITH NITRIDE-BASED FERROELECTRIC MATERIALS

THREE-DIMENSIONAL MEMORY DEVICES WITH TRANSITION METAL DICHALCOGENI...

STACKED 2D CMOS WITH INTER METAL LAYERS

INTEGRATED CIRCUITS WITH HIGH DIELECTRIC CONSTANT INTERFACIAL LAYERING

ANGLED ETCH TO ENABLE TIN REMOVAL FROM SELECTED SIDEWALLS

CONTACT GATING FOR 2D FIELD EFFECT TRANSISTORS

THREE-DIMENSIONAL FERROELECTRIC RANDOM ACCESS MEMORY (3D FRAM) WITH...

HETEROSTRUCTURE MATERIAL CONTACTS FOR 2D TRANSISTORS

MEMORY DEVICES WITH REDUCED READ DISTURBANCE EFFECTS

THIN FILM TRANSISTORS HAVING A SPIN-ON 2D CHANNEL MATERIAL

FERROELECTRIC THREE-DIMENSIONAL MEMORY

FERROELECTRIC RANDOM ACCESS MEMORY (FRAM) DEVICES WITH ENHANCED CAP...

ENHANCED CAPACITOR ARCHITECTURE FOR FERROELECTRIC MEMORY DEVICES

METAL REPLACEMENT PLATE LINE PROCESS FOR 3D-FERROELECTRIC RANDOM (3...

3D-FERROELECTRIC RANDOM (3D-FRAM) WITH BURIED TRENCH CAPACITORS

THIN FILM TRANSISTORS HAVING BORON NITRIDE INTEGRATED WITH 2D CHANN...