Simon Edward Willard

Person

Irvine, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Gate drivers for stacked transistor amplifiers
- Patent number 12,255,587
- Issue date Mar 18, 2025
- pSemi Corporation
- Poojan Wagh
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Body tie optimization for stacked transistor amplifier
- Patent number 12,231,087
- Issue date Feb 18, 2025
- pSemi Corporation
- Simon Edward Willard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Butted body contact for SOI transistor and amplifier circuit
- Patent number 12,205,954
- Issue date Jan 21, 2025
- pSemi Corporation
- Simon Edward Willard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
S-contact for SOI
- Patent number 12,100,707
- Issue date Sep 24, 2024
- pSemi Corporation
- Befruz Tasbas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low leakage FET
- Patent number 12,100,734
- Issue date Sep 24, 2024
- Murata Manufacturing Co., Ltd.
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RF switch stack with charge control elements
- Patent number 12,057,827
- Issue date Aug 6, 2024
- pSemi Corporation
- Eric S. Shapiro
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Distributed FET back-bias network
- Patent number 12,051,701
- Issue date Jul 30, 2024
- pSemi Corporation
- Simon Edward Willard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage switching device
- Patent number 12,027,623
- Issue date Jul 2, 2024
- Murata Manufacturing Co., Ltd.
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RF switch stack with charge redistribution
- Patent number 11,973,495
- Issue date Apr 30, 2024
- pSemi Corporation
- Simon Edward Willard
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Transient stabilized SOI FETs
- Patent number 11,948,897
- Issue date Apr 2, 2024
- pSemi Corporation
- Robert Mark Englekirk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
AC coupling modules for bias ladders
- Patent number 11,870,431
- Issue date Jan 9, 2024
- pSemi Corporation
- Simon Edward Willard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Butted body contact for SOI transistor, amplifier circuit and metho...
- Patent number 11,791,340
- Issue date Oct 17, 2023
- pSemi Corporation
- Simon Edward Willard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bypass circuitry to improve switching speed
- Patent number 11,777,485
- Issue date Oct 3, 2023
- pSemi Corporation
- Ravindranath D. Shrivastava
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Gate drivers for stacked transistor amplifiers
- Patent number 11,742,802
- Issue date Aug 29, 2023
- pSemi Corporation
- Poojan Wagh
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
S-contact for SOI
- Patent number 11,735,589
- Issue date Aug 22, 2023
- pSemi Corporation
- Befruz Tasbas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Body tie optimization for stacked transistor amplifier
- Patent number 11,606,065
- Issue date Mar 14, 2023
- pSemi Corporation
- Simon Edward Willard
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
RF switch stack with charge redistribution
- Patent number 11,601,126
- Issue date Mar 7, 2023
- pSemi Corporation
- Simon Edward Willard
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
RF switch stack with charge control elements
- Patent number 11,569,812
- Issue date Jan 31, 2023
- pSemi Corporation
- Eric S. Shapiro
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Low leakage FET
- Patent number 11,469,296
- Issue date Oct 11, 2022
- pSemi Corporation
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
AC coupling modules for bias ladders
- Patent number 11,418,183
- Issue date Aug 16, 2022
- pSemi Corporation
- Simon Edward Willard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
S-contact for SOI
- Patent number 11,387,235
- Issue date Jul 12, 2022
- pSemi Corporation
- Befruz Tasbas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Distributed FET back-bias network
- Patent number 11,374,022
- Issue date Jun 28, 2022
- pSemi Corporation
- Simon Edward Willard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low parasitic capacitance RF transistors
- Patent number 11,335,704
- Issue date May 17, 2022
- pSemi Corporation
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bypass circuitry to improve switching speed
- Patent number 11,329,642
- Issue date May 10, 2022
- pSemi Corporation
- Ravindranath D. Shrivastava
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Transient stabilized SOI FETs
- Patent number 11,251,140
- Issue date Feb 15, 2022
- pSemi Corporation
- Robert Mark Englekirk
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Gate drivers for stacked transistor amplifiers
- Patent number 11,190,139
- Issue date Nov 30, 2021
- pSemi Corporation
- Poojan Wagh
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Tunable capacitive compensation for RF switch FET stacks
- Patent number 11,049,855
- Issue date Jun 29, 2021
- pSemi Corporation
- Eric S. Shapiro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
AC coupling modules for bias ladders
- Patent number 11,018,662
- Issue date May 25, 2021
- pSemi Corporation
- Simon Edward Willard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Butted body contact for SOI transistor
- Patent number 10,985,183
- Issue date Apr 20, 2021
- pSemi Corporation
- Simon Edward Willard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Managed substrate effects for stabilized SOI FETs
- Patent number 10,971,359
- Issue date Apr 6, 2021
- pSemi Corporation
- Robert Mark Englekirk
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GATE DRIVERS FOR STACKED TRANSISTOR AMPLIFIERS
- Publication number 20250150035
- Publication date May 8, 2025
- pSemi Corporation
- Poojan Wagh
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
AC Coupling Modules for Bias Ladders
- Publication number 20250150073
- Publication date May 8, 2025
- pSemi Corporation
- Simon Edward Willard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Body Tie Optimization for Stacked Transistor Amplifier
- Publication number 20250150034
- Publication date May 8, 2025
- pSemi Corporation
- Simon Edward Willard
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Transient Stabilized SOI FETs
- Publication number 20250149470
- Publication date May 8, 2025
- pSemi Corporation
- Robert Mark Englekirk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Butted Body Contact for SOI Transistor, Amplifier Circuit and Metho...
- Publication number 20250133823
- Publication date Apr 24, 2025
- pSemi Corporation
- Simon Edward Willard
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Low Leakage FET
- Publication number 20250072062
- Publication date Feb 27, 2025
- MURATA MANUFACTURING CO., LTD.
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Contact Structures for Dual-Thickness Active Area SOI FETS
- Publication number 20250063822
- Publication date Feb 20, 2025
- pSemi Corporation
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Efficient FET Body and Substrate Contacts
- Publication number 20250056875
- Publication date Feb 13, 2025
- MURATA MANUFACTURING CO., LTD.
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACK-GATE EFFECT CONTROL VIA DOPING
- Publication number 20250048691
- Publication date Feb 6, 2025
- Murata Manufacturing Co., Ltd.
- Kouassi Sebastien KOUASSI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3-DIMENSIONAL INTEGRATED CIRCUIT STRUCTURES AND CIRCUITS
- Publication number 20250022775
- Publication date Jan 16, 2025
- Murata Manufacturing Co., Ltd.
- Shishir RAY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
S-Contact for SOI
- Publication number 20250015082
- Publication date Jan 9, 2025
- pSemi Corporation
- Befruz Tasbas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Distributed FET Back-Bias Network
- Publication number 20250015086
- Publication date Jan 9, 2025
- pSemi Corporation
- Simon Edward Willard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual-Thickness Active Area Architecture for SOI FETS
- Publication number 20240429239
- Publication date Dec 26, 2024
- pSemi Corporation
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Voltage Switching Device
- Publication number 20240413243
- Publication date Dec 12, 2024
- MURATA MANUFACTURING CO., LTD.
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RF SWITCH STACK WITH CHARGE REDISTRIBUTION
- Publication number 20240388289
- Publication date Nov 21, 2024
- pSemi Corporation
- Simon Edward Willard
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Transient Stabilized SOI FETs
- Publication number 20240347482
- Publication date Oct 17, 2024
- pSemi Corporation
- Robert Mark Englekirk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RF SWITCH STACK WITH CHARGE CONTROL ELEMENTS
- Publication number 20240340004
- Publication date Oct 10, 2024
- pSemi Corporation
- Eric S. SHAPIRO
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Low Leakage Replacement Metal Gate FET
- Publication number 20240313081
- Publication date Sep 19, 2024
- MURATA MANUFACTURING CO., LTD.
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Butted Body Contact for SOI Transistor, Amplifier Circuit and Metho...
- Publication number 20240113126
- Publication date Apr 4, 2024
- pSemi Corporation
- Simon Edward Willard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS DESIGNED WITH REDUCED LEAKAGE
- Publication number 20240105793
- Publication date Mar 28, 2024
- pSemi Corporation
- Simon WILLARD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
S-Contact for SOI
- Publication number 20240088151
- Publication date Mar 14, 2024
- pSemi Corporation
- Befruz Tasbas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AC Coupling Modules for Bias Ladders
- Publication number 20240063785
- Publication date Feb 22, 2024
- pSemi Corporation
- Simon Edward Willard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Drivers for Stacked Transistor Amplifiers
- Publication number 20240039479
- Publication date Feb 1, 2024
- pSemi Corporation
- Poojan Wagh
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
BYPASS CIRCUITRY TO IMPROVE SWITCHING SPEED
- Publication number 20240030906
- Publication date Jan 25, 2024
- pSemi Corporation
- Ravindranath D. SHRIVASTAVA
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Body Tie Optimization for Stacked Transistor Amplifier
- Publication number 20230283237
- Publication date Sep 7, 2023
- pSemi Corporation
- Simon Edward Willard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RF SWITCH STACK WITH CHARGE REDISTRIBUTION
- Publication number 20230246643
- Publication date Aug 3, 2023
- Simon Edward WILLARD
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
RF SWITCH STACK WITH CHARGE CONTROL ELEMENTS
- Publication number 20230208417
- Publication date Jun 29, 2023
- pSemi Corporation
- Eric S. SHAPIRO
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Low Leakage FET
- Publication number 20230094494
- Publication date Mar 30, 2023
- pSemi Corporation
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
S-Contact for SOI
- Publication number 20230065101
- Publication date Mar 2, 2023
- pSemi Corporation
- Befruz Tasbas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AC Coupling Modules for Bias Ladders
- Publication number 20230032891
- Publication date Feb 2, 2023
- pSemi Corporation
- Simon Edward Willard
- H01 - BASIC ELECTRIC ELEMENTS

Simon Edward Willard

Person

Patents Grantslast 30 patents

Gate drivers for stacked transistor amplifiers

Body tie optimization for stacked transistor amplifier

Butted body contact for SOI transistor and amplifier circuit

S-contact for SOI

Low leakage FET

RF switch stack with charge control elements

Distributed FET back-bias network

High voltage switching device

RF switch stack with charge redistribution

Transient stabilized SOI FETs

AC coupling modules for bias ladders

Butted body contact for SOI transistor, amplifier circuit and metho...

Bypass circuitry to improve switching speed

Gate drivers for stacked transistor amplifiers

S-contact for SOI

Body tie optimization for stacked transistor amplifier

RF switch stack with charge redistribution

RF switch stack with charge control elements

Low leakage FET

AC coupling modules for bias ladders

S-contact for SOI

Distributed FET back-bias network

Low parasitic capacitance RF transistors

Bypass circuitry to improve switching speed

Transient stabilized SOI FETs

Gate drivers for stacked transistor amplifiers

Tunable capacitive compensation for RF switch FET stacks

AC coupling modules for bias ladders

Butted body contact for SOI transistor

Managed substrate effects for stabilized SOI FETs

Patents Applicationslast 30 patents

GATE DRIVERS FOR STACKED TRANSISTOR AMPLIFIERS

AC Coupling Modules for Bias Ladders

Body Tie Optimization for Stacked Transistor Amplifier

Transient Stabilized SOI FETs

Butted Body Contact for SOI Transistor, Amplifier Circuit and Metho...

Low Leakage FET

Contact Structures for Dual-Thickness Active Area SOI FETS

Efficient FET Body and Substrate Contacts

BACK-GATE EFFECT CONTROL VIA DOPING

3-DIMENSIONAL INTEGRATED CIRCUIT STRUCTURES AND CIRCUITS

S-Contact for SOI

Distributed FET Back-Bias Network

Dual-Thickness Active Area Architecture for SOI FETS

High Voltage Switching Device

RF SWITCH STACK WITH CHARGE REDISTRIBUTION

Transient Stabilized SOI FETs

RF SWITCH STACK WITH CHARGE CONTROL ELEMENTS

Low Leakage Replacement Metal Gate FET

Butted Body Contact for SOI Transistor, Amplifier Circuit and Metho...

TRANSISTORS DESIGNED WITH REDUCED LEAKAGE

S-Contact for SOI

AC Coupling Modules for Bias Ladders

Gate Drivers for Stacked Transistor Amplifiers

BYPASS CIRCUITRY TO IMPROVE SWITCHING SPEED

Body Tie Optimization for Stacked Transistor Amplifier

RF SWITCH STACK WITH CHARGE REDISTRIBUTION

RF SWITCH STACK WITH CHARGE CONTROL ELEMENTS

Low Leakage FET

S-Contact for SOI

AC Coupling Modules for Bias Ladders