Simon Yang

Person

Portland, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Device having recessed spacers for improved salicide resistance on...
- Patent number 7,211,872
- Issue date May 1, 2007
- Intel Corporation
- Chia-Hong Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device with recessed thin and thick spacers for improved salicide r...
- Patent number 6,777,760
- Issue date Aug 17, 2004
- Intel Corporation
- Chia-Hong Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thermo-mechanically robust C4 ball-limiting metallurgy to prevent f...
- Patent number 6,740,427
- Issue date May 25, 2004
- Intel Corporation
- Madhav Datta
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Grant
Method and device for improved salicide resistance on polysilicon g...
- Patent number 6,593,633
- Issue date Jul 15, 2003
- Intel Corporation
- Chia-Hong Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
N2O nitrided-oxide trench sidewalls to prevent boron outdiffusion a...
- Patent number 6,566,727
- Issue date May 20, 2003
- Intel Corporation
- Reza Arghavani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device having spacers for improved salicide resistance on polysilic...
- Patent number 6,521,964
- Issue date Feb 18, 2003
- Intel Corporation
- Chia-Hong Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device having thin first spacers and partially recessed thick secon...
- Patent number 6,509,618
- Issue date Jan 21, 2003
- Intel Corporation
- Chia-Hong Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of recessing spacers to improved salicide resistance on poly...
- Patent number 6,506,652
- Issue date Jan 14, 2003
- Intel Corporation
- Chia-Hong Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and device for improved salicide resistance on polysilicon g...
- Patent number 6,271,096
- Issue date Aug 7, 2001
- Intel Corporation
- Chia-Hong Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and device for improved salicide resistance on polysilicon g...
- Patent number 6,268,254
- Issue date Jul 31, 2001
- Intel Corporation
- Chia-Hong Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
N2O Nitrided-oxide trench sidewalls to prevent boron outdiffusion a...
- Patent number 6,261,925
- Issue date Jul 17, 2001
- Intel Corporation
- Reza Arghavani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and device for improved salicide resistance on polysilicon g...
- Patent number 6,251,762
- Issue date Jun 26, 2001
- Intel Corporation
- Chia-Hong Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of using thick first spacers to improve salicide resistance...
- Patent number 6,235,598
- Issue date May 22, 2001
- Intel Corporation
- Chia-Hong Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and device for improved salicide resistance on polysilicon g...
- Patent number 6,188,117
- Issue date Feb 13, 2001
- Intel Corporation
- Chia-Hong Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
N.sub.2 O nitrided-oxide trench sidewalls and method of making isol...
- Patent number 5,780,346
- Issue date Jul 14, 1998
- Intel Corporation
- Reza Arghavani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tri-layer titanium coating for an aluminum layer of a semiconductor...
- Patent number 5,289,035
- Issue date Feb 22, 1994
- Intel Corporation
- Melton C. Bost
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of forming a tri-layer titanium coating for an aluminum lay...
- Patent number 5,231,053
- Issue date Jul 27, 1993
- Intel Corporation
- Melton C. Bost
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
A METHOD FOR PROCESSING IC DESIGNS FOR DIFFERENT METAL BEOL PROCESSES
- Publication number 20070037384
- Publication date Feb 15, 2007
- CIWEST SEMICONDUCTOR CORPORATION
- Jiannong Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A METHOD FOR USING A CU BEOL PROCESS TO FABRICATE AN INTEGRATED CIR...
- Publication number 20070037394
- Publication date Feb 15, 2007
- CIWEST SEMICONDUCTOR CORPORATION
- Jiannong Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thermo-mechanically robust C4 ball-limiting metallurgy to prevent f...
- Publication number 20030059644
- Publication date Mar 27, 2003
- Intel Corporation
- Madhav Datta
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Application
A DEVICE WITH THIN SPACERS TO IMPROVE SALICIDE RESISTANCE ON POLYSI...
- Publication number 20020082624
- Publication date Jun 27, 2002
- Chia-Hong Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A DEVICE HAVING THIN FIRST SPACERS AND PARTIALLY RECESSED THICK SEC...
- Publication number 20020003268
- Publication date Jan 10, 2002
- CHIA-HONG JAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND DEVICE FOR IMPROVED SALICIDE RESISTANCE ON POLYSILICON G...
- Publication number 20010045586
- Publication date Nov 29, 2001
- CHIA-HONG JAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A METHOD OF RECESSING SPACERS TO IMPROVE SALICIDES RESISTANCE ON PO...
- Publication number 20010045607
- Publication date Nov 29, 2001
- CHIA-HONG JAN
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Device having recessed spacers for improved salicide resistance on...

Device with recessed thin and thick spacers for improved salicide r...

Thermo-mechanically robust C4 ball-limiting metallurgy to prevent f...

Method and device for improved salicide resistance on polysilicon g...

N2O nitrided-oxide trench sidewalls to prevent boron outdiffusion a...

Device having spacers for improved salicide resistance on polysilic...

Device having thin first spacers and partially recessed thick secon...

Method of recessing spacers to improved salicide resistance on poly...

Method and device for improved salicide resistance on polysilicon g...

Method and device for improved salicide resistance on polysilicon g...

N2O Nitrided-oxide trench sidewalls to prevent boron outdiffusion a...

Method and device for improved salicide resistance on polysilicon g...

Method of using thick first spacers to improve salicide resistance...

Method and device for improved salicide resistance on polysilicon g...

N.sub.2 O nitrided-oxide trench sidewalls and method of making isol...

Tri-layer titanium coating for an aluminum layer of a semiconductor...

Process of forming a tri-layer titanium coating for an aluminum lay...

Patents Applicationslast 30 patents

A METHOD FOR PROCESSING IC DESIGNS FOR DIFFERENT METAL BEOL PROCESSES

A METHOD FOR USING A CU BEOL PROCESS TO FABRICATE AN INTEGRATED CIR...

Thermo-mechanically robust C4 ball-limiting metallurgy to prevent f...

A DEVICE WITH THIN SPACERS TO IMPROVE SALICIDE RESISTANCE ON POLYSI...

A DEVICE HAVING THIN FIRST SPACERS AND PARTIALLY RECESSED THICK SEC...

METHOD AND DEVICE FOR IMPROVED SALICIDE RESISTANCE ON POLYSILICON G...

A METHOD OF RECESSING SPACERS TO IMPROVE SALICIDES RESISTANCE ON PO...