Sipeng Gu

Person

Clifton Park, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Ion implantation to reduce nanosheet gate length variation
- Patent number 11,955,533
- Issue date Apr 9, 2024
- Applied Materials, Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having late-formed isolation structures
- Patent number 11,908,857
- Issue date Feb 20, 2024
- GLOBALFOUNDRIES U.S. INC.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structures
- Patent number 11,908,917
- Issue date Feb 20, 2024
- GLOBALFOUNDRIES Inc.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device comprising a top via electrode and methods of making...
- Patent number 11,812,670
- Issue date Nov 7, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Yanping Shen
Information Patent Grant
Top electrode for a memory device and methods of making such a memo...
- Patent number 11,785,860
- Issue date Oct 10, 2023
- GLOBALFOUNDRIES U.S. INC.
- Sipeng Gu
Information Patent Grant
Localized stressor formation by ion implantation
- Patent number 11,728,383
- Issue date Aug 15, 2023
- Applied Materials, Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for selective tungsten contact formation on semiconducto...
- Patent number 11,728,214
- Issue date Aug 15, 2023
- Applied Materials, Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned contact
- Patent number 11,721,728
- Issue date Aug 8, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation method to enable continuous channel layer
- Patent number 11,664,419
- Issue date May 30, 2023
- Applied Materials, Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique for reducing gate induced drain leakage in DRAM cells
- Patent number 11,610,972
- Issue date Mar 21, 2023
- Applied Materials, Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Handling for high resistivity substrates
- Patent number 11,594,441
- Issue date Feb 28, 2023
- Applied Materials, Inc.
- Sipeng Gu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Memory device comprising a top via electrode and methods of making...
- Patent number 11,569,437
- Issue date Jan 31, 2023
- GLOBALFOUNDRIES U.S. INC.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with separately-formed source and drain
- Patent number 11,563,085
- Issue date Jan 24, 2023
- GLOBALFOUNDRIES U.S. INC.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single diffusion breaks including stacked dielectric layers
- Patent number 11,545,574
- Issue date Jan 3, 2023
- GLOBALFOUNDRIES U.S. INC.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion implantation to form step-oxide trench MOSFET
- Patent number 11,538,925
- Issue date Dec 27, 2022
- Applied Materials, Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device having sidewall spacers contacting lower surfaces...
- Patent number 11,502,200
- Issue date Nov 15, 2022
- GLOBALFOUNDRIES U.S. INC.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and methods of making such a memory device
- Patent number 11,437,568
- Issue date Sep 6, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming a replacement gate structure for a transistor de...
- Patent number 11,437,490
- Issue date Sep 6, 2022
- GLOBALFOUNDRIES U.S. INC.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion implantation to reduce nanosheet gate length variation
- Patent number 11,430,877
- Issue date Aug 30, 2022
- Applied Materials, Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three part source/drain region structure for transistor
- Patent number 11,329,158
- Issue date May 10, 2022
- GLOBALFOUNDRIES U.S. INC.
- Halting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Via structures for use in semiconductor devices
- Patent number 11,222,844
- Issue date Jan 11, 2022
- GLOBALFOUNDRIES U.S. INC.
- Jun Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with a hybrid source or drain
- Patent number 11,177,385
- Issue date Nov 16, 2021
- GLOBALFOUNDRIES U.S. INC.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with source/drain regions having sections of epitaxial...
- Patent number 11,164,795
- Issue date Nov 2, 2021
- GLOBALFOUNDRIES U.S. INC.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate capping layers of semiconductor devices
- Patent number 11,164,954
- Issue date Nov 2, 2021
- GLOBALFOUNDRIES U.S. INC.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-level isolation structure
- Patent number 11,158,633
- Issue date Oct 26, 2021
- GLOBALFOUNDRIES U.S. INC.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with a sectioned epitaxial semiconductor layer
- Patent number 11,133,417
- Issue date Sep 28, 2021
- GLOBALFOUNDRIES U.S. INC.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structures
- Patent number 11,127,834
- Issue date Sep 21, 2021
- GLOBALFOUNDRIES U.S. INC.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IC products formed on a substrate having localized regions of high...
- Patent number 11,114,466
- Issue date Sep 7, 2021
- GLOBALFOUNDRIES U.S. INC.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS integrated circuit product
- Patent number 11,075,298
- Issue date Jul 27, 2021
- GLOBALFOUNDRIES U.S. INC.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with separately-formed source and drain
- Patent number 11,075,268
- Issue date Jul 27, 2021
- GLOBALFOUNDRIES U.S. INC.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DRAM Transistor Including Buried Bitline
- Publication number 20240292599
- Publication date Aug 29, 2024
- Applied Materials, Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
4F2 DRAM Including Buried Bitline
- Publication number 20240268095
- Publication date Aug 8, 2024
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRAM Transistor Including Pillars Formed Using Low-Temperature Ion...
- Publication number 20240251546
- Publication date Jul 25, 2024
- Applied Materials, Inc.
- Sipeng Gu
Information Patent Application
DRAM TRANSISTOR INCLUDING HORIZONAL BODY CONTACT
- Publication number 20240188279
- Publication date Jun 6, 2024
- Applied Materials, Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical FinFet Formation Using Directional Deposition
- Publication number 20240172419
- Publication date May 23, 2024
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BOTTOM CONTACT FORMATION FOR 4F2 VERTICAL DRAM
- Publication number 20240121937
- Publication date Apr 11, 2024
- Applied Materials, Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC MOSFET Including Trench with Rounded Corners
- Publication number 20240079236
- Publication date Mar 7, 2024
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FDSOI DEVICE INCLUDING SELF-ALIGNED DIFFUSION BREAK
- Publication number 20240072059
- Publication date Feb 29, 2024
- Applied Materials, Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE COMPRISING A TOP VIA ELECTRODE AND METHODS OF MAKING...
- Publication number 20230078730
- Publication date Mar 16, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUES FOR SELECTIVE TUNGSTEN CONTACT FORMATION ON SEMICONDUCTO...
- Publication number 20220392804
- Publication date Dec 8, 2022
- Applied Materials, Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ION IMPLANTATION TO REDUCE NANOSHEET GATE LENGTH VARIATION
- Publication number 20220359723
- Publication date Nov 10, 2022
- Applied Materials, Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUE FOR REDUCING GATE INDUCED DRAIN LEAKAGE IN DRAM CELLS
- Publication number 20220359670
- Publication date Nov 10, 2022
- Applied Materials, Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Handling For High Resistivity Substrates
- Publication number 20220328337
- Publication date Oct 13, 2022
- Applied Materials, Inc.
- Sipeng Gu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
ION IMPLANTATION TO FORM STEP-OXIDE TRENCH MOSFET
- Publication number 20220190141
- Publication date Jun 16, 2022
- Applied Materials, Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ION IMPLANTATION TO REDUCE NANOSHEET GATE LENGTH VARIATION
- Publication number 20220157968
- Publication date May 19, 2022
- Applied Materials, Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Isolation Method To Enable Continuous Channel Layer
- Publication number 20220109045
- Publication date Apr 7, 2022
- Applied Materials, Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Localized Stressor Formation By Ion Implantation
- Publication number 20220102500
- Publication date Mar 31, 2022
- Applied Materials, Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE DIFFUSION BREAKS INCLUDING STACKED DIELECTRIC LAYERS
- Publication number 20220052193
- Publication date Feb 17, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF PROTECTING SEMICONDUCTOR MATERIALS IN THE ACTIVE REGION...
- Publication number 20210399126
- Publication date Dec 23, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VIA STRUCTURES FOR USE IN SEMICONDUCTOR DEVICES
- Publication number 20210391250
- Publication date Dec 16, 2021
- GLOBALFOUNDRIES U.S. Inc.
- JUN LIAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES HAVING LATE-FORMED ISOLATION STRUCTURES
- Publication number 20210391323
- Publication date Dec 16, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURES
- Publication number 20210376106
- Publication date Dec 2, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Jiehui SHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE COMPRISING A TOP VIA ELECTRODE AND METHODS OF MAKING...
- Publication number 20210336126
- Publication date Oct 28, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING A REPLACEMENT GATE STRUCTURE FOR A TRANSISTOR DE...
- Publication number 20210320189
- Publication date Oct 14, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE PART SOURCE/DRAIN REGION STRUCTURE FOR TRANSISTOR
- Publication number 20210320207
- Publication date Oct 14, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TOP ELECTRODE FOR A MEMORY DEVICE AND METHODS OF MAKING SUCH A MEMO...
- Publication number 20210320244
- Publication date Oct 14, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LEVEL ISOLATION STRUCTURE
- Publication number 20210313321
- Publication date Oct 7, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH SOURCE/DRAIN REGIONS HAVING SECTIONS OF EPITAXIAL...
- Publication number 20210305103
- Publication date Sep 30, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHODS OF MAKING SUCH A MEMORY DEVICE
- Publication number 20210305495
- Publication date Sep 30, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Yanping Shen
- G11 - INFORMATION STORAGE
Information Patent Application
TRANSISTORS WITH A SECTIONED EPITAXIAL SEMICONDUCTOR LAYER
- Publication number 20210288182
- Publication date Sep 16, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Ion implantation to reduce nanosheet gate length variation

Semiconductor devices having late-formed isolation structures

Gate structures

Memory device comprising a top via electrode and methods of making...

Top electrode for a memory device and methods of making such a memo...

Localized stressor formation by ion implantation

Techniques for selective tungsten contact formation on semiconducto...

Self-aligned contact

Isolation method to enable continuous channel layer

Technique for reducing gate induced drain leakage in DRAM cells

Handling for high resistivity substrates

Memory device comprising a top via electrode and methods of making...

Transistors with separately-formed source and drain

Single diffusion breaks including stacked dielectric layers

Ion implantation to form step-oxide trench MOSFET

Transistor device having sidewall spacers contacting lower surfaces...

Memory device and methods of making such a memory device

Methods of forming a replacement gate structure for a transistor de...

Ion implantation to reduce nanosheet gate length variation

Three part source/drain region structure for transistor

Via structures for use in semiconductor devices

Transistors with a hybrid source or drain

Transistors with source/drain regions having sections of epitaxial...

Gate capping layers of semiconductor devices

Multi-level isolation structure

Transistors with a sectioned epitaxial semiconductor layer

Gate structures

IC products formed on a substrate having localized regions of high...

LDMOS integrated circuit product

Transistors with separately-formed source and drain

Patents Applicationslast 30 patents

DRAM Transistor Including Buried Bitline

4F2 DRAM Including Buried Bitline

DRAM Transistor Including Pillars Formed Using Low-Temperature Ion...

DRAM TRANSISTOR INCLUDING HORIZONAL BODY CONTACT

Vertical FinFet Formation Using Directional Deposition

BOTTOM CONTACT FORMATION FOR 4F2 VERTICAL DRAM

SiC MOSFET Including Trench with Rounded Corners

FDSOI DEVICE INCLUDING SELF-ALIGNED DIFFUSION BREAK

MEMORY DEVICE COMPRISING A TOP VIA ELECTRODE AND METHODS OF MAKING...

TECHNIQUES FOR SELECTIVE TUNGSTEN CONTACT FORMATION ON SEMICONDUCTO...

ION IMPLANTATION TO REDUCE NANOSHEET GATE LENGTH VARIATION

TECHNIQUE FOR REDUCING GATE INDUCED DRAIN LEAKAGE IN DRAM CELLS

Handling For High Resistivity Substrates

ION IMPLANTATION TO FORM STEP-OXIDE TRENCH MOSFET

ION IMPLANTATION TO REDUCE NANOSHEET GATE LENGTH VARIATION

Isolation Method To Enable Continuous Channel Layer

Localized Stressor Formation By Ion Implantation

SINGLE DIFFUSION BREAKS INCLUDING STACKED DIELECTRIC LAYERS

METHODS OF PROTECTING SEMICONDUCTOR MATERIALS IN THE ACTIVE REGION...

VIA STRUCTURES FOR USE IN SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICES HAVING LATE-FORMED ISOLATION STRUCTURES

GATE STRUCTURES

MEMORY DEVICE COMPRISING A TOP VIA ELECTRODE AND METHODS OF MAKING...

METHODS OF FORMING A REPLACEMENT GATE STRUCTURE FOR A TRANSISTOR DE...

THREE PART SOURCE/DRAIN REGION STRUCTURE FOR TRANSISTOR

TOP ELECTRODE FOR A MEMORY DEVICE AND METHODS OF MAKING SUCH A MEMO...

MULTI-LEVEL ISOLATION STRUCTURE

TRANSISTORS WITH SOURCE/DRAIN REGIONS HAVING SECTIONS OF EPITAXIAL...

MEMORY DEVICE AND METHODS OF MAKING SUCH A MEMORY DEVICE

TRANSISTORS WITH A SECTIONED EPITAXIAL SEMICONDUCTOR LAYER