Soon-Cheon Seo

Person

Glenmont, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Back end of line embedded RRAM structure with low forming voltage
- Patent number 12,144,271
- Issue date Nov 12, 2024
- International Business Machines Corporation
- Oleg Gluschenkov
Information Patent Grant
Back end of line embedded RRAM structure with grain growth enhancement
- Patent number 12,144,270
- Issue date Nov 12, 2024
- International Business Machines Corporation
- Oleg Gluschenkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and process to tuck fin tips self-aligned to gates
- Patent number RE50174
- Issue date Oct 15, 2024
- TESSERA LLC
- Bruce B. Doris
Information Patent Grant
Maskless alignment scheme for BEOL memory array manufacturing
- Patent number 12,107,008
- Issue date Oct 1, 2024
- International Business Machines Corporation
- Soon-Cheon Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunable resistive random access memory cell
- Patent number 12,004,435
- Issue date Jun 4, 2024
- International Business Machines Corporation
- Min Gyu Sung
Information Patent Grant
RRAM with high work function cap
- Patent number 12,004,436
- Issue date Jun 4, 2024
- International Business Machines Corporation
- Soon-Cheon Seo
Information Patent Grant
Contact resistance of a metal liner in a phase change memory cell
- Patent number 11,957,069
- Issue date Apr 9, 2024
- International Business Machines Corporation
- Injo Ok
Information Patent Grant
BEOL fat wire level ground rule compatible embedded artificial inte...
- Patent number 11,956,975
- Issue date Apr 9, 2024
- International Business Machines Corporation
- Soon-Cheon Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Antenna assisted ReRAM formation
- Patent number 11,737,379
- Issue date Aug 22, 2023
- International Business Machines Corporation
- Youngseok Kim
Information Patent Grant
Phase change memory
- Patent number 11,711,989
- Issue date Jul 25, 2023
- International Business Machines Corporation
- Injo Ok
Information Patent Grant
Phase change memory structure with efficient heating system
- Patent number 11,659,780
- Issue date May 23, 2023
- International Business Machines Corporation
- Injo Ok
- G11 - INFORMATION STORAGE
Information Patent Grant
Oxide-based resistive memory having a plasma-exposed bottom electrode
- Patent number 11,647,680
- Issue date May 9, 2023
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non volatile resistive memory logic device
- Patent number 11,600,325
- Issue date Mar 7, 2023
- International Business Machines Corporation
- Hsueh-Chung Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive memory array
- Patent number 11,588,103
- Issue date Feb 21, 2023
- International Business Machines Corporation
- Youngseok Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures including middle-of-line (MOL) capacitance...
- Patent number 11,522,045
- Issue date Dec 6, 2022
- TESSERA LLC
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory structure and method for low programming voltag...
- Patent number 11,430,513
- Issue date Aug 30, 2022
- International Business Machines Corporation
- Soon-Cheon Seo
- G11 - INFORMATION STORAGE
Information Patent Grant
Setting an upper bound on RRAM resistance
- Patent number 11,430,514
- Issue date Aug 30, 2022
- International Business Machines Corporation
- Youngseok Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Heterojunction bipolar transistor with a silicon oxide layer on a s...
- Patent number 11,282,947
- Issue date Mar 22, 2022
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate last vertical transport field effect transistor
- Patent number 11,245,025
- Issue date Feb 8, 2022
- International Business Machines Corporation
- Choonghyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Maskless top source/drain epitaxial growth on vertical transport fi...
- Patent number 11,244,870
- Issue date Feb 8, 2022
- International Business Machines Corporation
- Choonghyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded BEOL memory device with top electrode pillar
- Patent number 11,239,421
- Issue date Feb 1, 2022
- International Business Machines Corporation
- Dexin Kong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate channel length control in VFET
- Patent number 11,201,092
- Issue date Dec 14, 2021
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low forming voltage non-volatile memory (NVM)
- Patent number 11,196,000
- Issue date Dec 7, 2021
- International Business Machines Corporation
- Youngseok Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical fin-type bipolar junction transistor with self-aligned bas...
- Patent number 11,139,380
- Issue date Oct 5, 2021
- International Business Machines Corporation
- Choonghyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for enhancing vertical gate-all-around FET performance
- Patent number 11,069,686
- Issue date Jul 20, 2021
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field effect transistor with low-resistance bottom source-...
- Patent number 11,043,598
- Issue date Jun 22, 2021
- International Business Machines Corporation
- Choonghyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure of improving contact resistance for passive an...
- Patent number 11,038,055
- Issue date Jun 15, 2021
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical nano-wire complimentary metal-oxide-semiconductor transist...
- Patent number 11,038,064
- Issue date Jun 15, 2021
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spacer for dual epi CMOS devices
- Patent number 11,031,396
- Issue date Jun 8, 2021
- International Business Machines Corporation
- Soon-Cheon Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Minimize middle-of-line contact line shorts
- Patent number 11,011,429
- Issue date May 18, 2021
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DIFFERENT WORK FUNCTION METALS
- Publication number 20240321882
- Publication date Sep 26, 2024
- International Business Machines Corporation
- Soon-Cheon Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TOP CONTACT ON RESISTIVE RANDOM ACCESS MEMORY
- Publication number 20240206352
- Publication date Jun 20, 2024
- International Business Machines Corporation
- Soon-Cheon Seo
Information Patent Application
EMBEDDED ReRAM WITH BACKSIDE CONTACT
- Publication number 20240196627
- Publication date Jun 13, 2024
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE DIMENSIONAL RERAM DEVICE
- Publication number 20240179924
- Publication date May 30, 2024
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS-INDUCED FORMING OF OXIDE RRAM
- Publication number 20240155952
- Publication date May 9, 2024
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM-ACCESS MEMORY STRUCTURES WITH STACKED TRANSISTORS
- Publication number 20240130142
- Publication date Apr 18, 2024
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL NAND WITH BACKSIDE STACKING
- Publication number 20240099011
- Publication date Mar 21, 2024
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RRAM WITH HIGH WORK FUNCTION CAP
- Publication number 20240040940
- Publication date Feb 1, 2024
- International Business Machines Corporation
- Soon-Cheon Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNABLE RESISTIVE RANDOM ACCESS MEMORY CELL
- Publication number 20230397514
- Publication date Dec 7, 2023
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANTENNA ASSISTED RERAM FORMATION
- Publication number 20230309421
- Publication date Sep 28, 2023
- International Business Machines Corporation
- Youngseok Kim
Information Patent Application
SEMICONDUCTOR STRUCTURES INCLUDING MIDDLE-OF-LINE (MOL) CAPACITANCE...
- Publication number 20230299134
- Publication date Sep 21, 2023
- TESSERA LLC
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OXIDE-BASED RESISTIVE MEMORY HAVING A PLASMA-EXPOSED BOTTOM ELECTRODE
- Publication number 20230263077
- Publication date Aug 17, 2023
- International Business Machines Corporation
- TAKASHI ANDO
Information Patent Application
REDUNDANT BOTTOM PAD AND SACRIFICIAL VIA CONTACT FOR PROCESS INDUCE...
- Publication number 20230210025
- Publication date Jun 29, 2023
- International Business Machines Corporation
- Youngseok Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Programming Current Control for Artificial Intelligence (AI) Devices
- Publication number 20230189536
- Publication date Jun 15, 2023
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY PROGRAMMING CURRENT LEAKAGE REDUCTION
- Publication number 20230180639
- Publication date Jun 8, 2023
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY GAPS
- Publication number 20230157185
- Publication date May 18, 2023
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MASKLESS ALIGNMENT SCHEME FOR BEOL MEMORY ARRAY MANUFACTURING
- Publication number 20230145961
- Publication date May 11, 2023
- International Business Machines Corporation
- Soon-Cheon Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT RESISTANCE OF A METAL LINER IN A PHASE CHANGE MEMORY CELL
- Publication number 20230129619
- Publication date Apr 27, 2023
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ARTIFICIAL INTELLIGENCE (AI) DEVICES WITH IMPROVED THERMAL STABILIT...
- Publication number 20230105007
- Publication date Apr 6, 2023
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE IDENTIFICATION USING PREFORMED RESISTIVE MEMORY
- Publication number 20230085995
- Publication date Mar 23, 2023
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE-CHANGE MEMORY WITH EMBEDDED AIR GAP
- Publication number 20230093604
- Publication date Mar 23, 2023
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BEOL FAT WIRE LEVEL GROUND RULE COMPATIBLE EMBEDDED ARTIFICIAL INTE...
- Publication number 20230079392
- Publication date Mar 16, 2023
- International Business Machines Corporation
- Soon-Cheon Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INDIVIDUALLY PLASMA-INDUCED MEMORY UNIT CELLS FOR A CROSSBAR ARRAY
- Publication number 20230067357
- Publication date Mar 2, 2023
- International Business Machines Corporation
- Soon-Cheon Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACK END OF LINE EMBEDDED RRAM STRUCTURE WITH GRAIN GROWTH ENHANCEMENT
- Publication number 20230051017
- Publication date Feb 16, 2023
- International Business Machines Corporation
- Oleg Gluschenkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACK END OF LINE EMBEDDED RRAM STRUCTURE WITH LOW FORMING VOLTAGE
- Publication number 20230051052
- Publication date Feb 16, 2023
- International Business Machines Corporation
- Oleg Gluschenkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY
- Publication number 20220310911
- Publication date Sep 29, 2022
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANTENNA ASSISTED RERAM FORMATION
- Publication number 20220238803
- Publication date Jul 28, 2022
- International Business Machines Corporation
- Youngseok Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SETTING AN UPPER BOUND ON RRAM RESISTANCE
- Publication number 20220223205
- Publication date Jul 14, 2022
- International Business Machines Corporation
- Youngseok Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON VOLATILE RESISTIVE MEMORY LOGIC DEVICE
- Publication number 20220172776
- Publication date Jun 2, 2022
- International Business Machines Corporation
- Hsueh-Chung Chen
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE MEMORY ARRAY
- Publication number 20220165947
- Publication date May 26, 2022
- International Business Machines Corporation
- Youngseok Kim
- H01 - BASIC ELECTRIC ELEMENTS

Soon-Cheon Seo

Person

Patents Grantslast 30 patents

Back end of line embedded RRAM structure with low forming voltage

Back end of line embedded RRAM structure with grain growth enhancement

Structure and process to tuck fin tips self-aligned to gates

Maskless alignment scheme for BEOL memory array manufacturing

Tunable resistive random access memory cell

RRAM with high work function cap

Contact resistance of a metal liner in a phase change memory cell

BEOL fat wire level ground rule compatible embedded artificial inte...

Antenna assisted ReRAM formation

Phase change memory

Phase change memory structure with efficient heating system

Oxide-based resistive memory having a plasma-exposed bottom electrode

Non volatile resistive memory logic device

Resistive memory array

Semiconductor structures including middle-of-line (MOL) capacitance...

Non-volatile memory structure and method for low programming voltag...

Setting an upper bound on RRAM resistance

Heterojunction bipolar transistor with a silicon oxide layer on a s...

Gate last vertical transport field effect transistor

Maskless top source/drain epitaxial growth on vertical transport fi...

Embedded BEOL memory device with top electrode pillar

Gate channel length control in VFET

Low forming voltage non-volatile memory (NVM)

Vertical fin-type bipolar junction transistor with self-aligned bas...

Techniques for enhancing vertical gate-all-around FET performance

Vertical field effect transistor with low-resistance bottom source-...

Method and structure of improving contact resistance for passive an...

Vertical nano-wire complimentary metal-oxide-semiconductor transist...

Spacer for dual epi CMOS devices

Minimize middle-of-line contact line shorts

Patents Applicationslast 30 patents

DIFFERENT WORK FUNCTION METALS

TOP CONTACT ON RESISTIVE RANDOM ACCESS MEMORY

EMBEDDED ReRAM WITH BACKSIDE CONTACT

THREE DIMENSIONAL RERAM DEVICE

PROCESS-INDUCED FORMING OF OXIDE RRAM

RESISTIVE RANDOM-ACCESS MEMORY STRUCTURES WITH STACKED TRANSISTORS

VERTICAL NAND WITH BACKSIDE STACKING

RRAM WITH HIGH WORK FUNCTION CAP

TUNABLE RESISTIVE RANDOM ACCESS MEMORY CELL

ANTENNA ASSISTED RERAM FORMATION

SEMICONDUCTOR STRUCTURES INCLUDING MIDDLE-OF-LINE (MOL) CAPACITANCE...

OXIDE-BASED RESISTIVE MEMORY HAVING A PLASMA-EXPOSED BOTTOM ELECTRODE

REDUNDANT BOTTOM PAD AND SACRIFICIAL VIA CONTACT FOR PROCESS INDUCE...

Programming Current Control for Artificial Intelligence (AI) Devices

PHASE CHANGE MEMORY PROGRAMMING CURRENT LEAKAGE REDUCTION

PHASE CHANGE MEMORY GAPS

MASKLESS ALIGNMENT SCHEME FOR BEOL MEMORY ARRAY MANUFACTURING

CONTACT RESISTANCE OF A METAL LINER IN A PHASE CHANGE MEMORY CELL

ARTIFICIAL INTELLIGENCE (AI) DEVICES WITH IMPROVED THERMAL STABILIT...

SEMICONDUCTOR DEVICE IDENTIFICATION USING PREFORMED RESISTIVE MEMORY

PHASE-CHANGE MEMORY WITH EMBEDDED AIR GAP

BEOL FAT WIRE LEVEL GROUND RULE COMPATIBLE EMBEDDED ARTIFICIAL INTE...

INDIVIDUALLY PLASMA-INDUCED MEMORY UNIT CELLS FOR A CROSSBAR ARRAY

BACK END OF LINE EMBEDDED RRAM STRUCTURE WITH GRAIN GROWTH ENHANCEMENT

BACK END OF LINE EMBEDDED RRAM STRUCTURE WITH LOW FORMING VOLTAGE

PHASE CHANGE MEMORY

ANTENNA ASSISTED RERAM FORMATION

SETTING AN UPPER BOUND ON RRAM RESISTANCE

NON VOLATILE RESISTIVE MEMORY LOGIC DEVICE

RESISTIVE MEMORY ARRAY