Stanley L. Filipiak

Person

Pflugerville, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Dual plasma treatment barrier film to reduce low-k damage
- Patent number 7,763,538
- Issue date Jul 27, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Michael D. Turner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with hydrogen barrier and method therefor
- Patent number 7,592,273
- Issue date Sep 22, 2009
- FREESCALE SEMICONDUCTOR, INC.
- Stanley M. Filipiak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming an electronic device including transistor struc...
- Patent number 7,504,289
- Issue date Mar 17, 2009
- FREESCALE SEMICONDUCTOR, INC.
- Sangwoo Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an interlayer dielectric
- Patent number 7,442,598
- Issue date Oct 28, 2008
- FREESCALE SEMICONDUCTOR, INC.
- Paul A. Grudowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device having a diffusion barrier...
- Patent number 7,422,979
- Issue date Sep 9, 2008
- FREESCALE SEMICONDUCTOR, INC.
- Lynne M. Michaelson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a semiconductor device using treated photoresist
- Patent number 7,157,377
- Issue date Jan 2, 2007
- FREESCALE SEMICONDUCTOR, INC.
- Cesar M. Garza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma enhanced nitride layer
- Patent number 7,074,713
- Issue date Jul 11, 2006
- FREESCALE SEMICONDUCTOR, INC.
- Jian Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a passivation layer for air gap formation
- Patent number 6,838,354
- Issue date Jan 4, 2005
- FREESCALE SEMICONDUCTOR, INC.
- Cindy K. Goldberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, memory cell, and processes for forming them
- Patent number 6,686,633
- Issue date Feb 3, 2004
- Motorola, Inc.
- Craig S. Lage
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced water adsorption for interlayer dielectric
- Patent number 6,475,925
- Issue date Nov 5, 2002
- Motorola, Inc.
- Gregor W. Braeckelmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming a combination hardmask and antireflective layer
- Patent number 6,287,951
- Issue date Sep 11, 2001
- Motorola Inc.
- Kevin D. Lucas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a tensile plasma enhanced nitride capping layer...
- Patent number 6,284,633
- Issue date Sep 4, 2001
- Motorola Inc.
- Rajan Nagabushnam
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device having a titanium-aluminum compound
- Patent number 6,218,733
- Issue date Apr 17, 2001
- Motorola Inc.
- Robert W. Fiordalice
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming a semiconductor device having an interconnect o...
- Patent number 6,184,073
- Issue date Feb 6, 2001
- Motorola, Inc.
- Craig S. Lage
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Copper interconnect structure and method of formation
- Patent number 6,174,810
- Issue date Jan 16, 2001
- Motorola, Inc.
- Rabiul Islam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming an inlaid via in a semiconductor device
- Patent number 6,054,377
- Issue date Apr 25, 2000
- Motorola, Inc.
- Stanley M. Filipiak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming a semiconductor device with an antireflective l...
- Patent number 5,918,147
- Issue date Jun 29, 1999
- Motorola, Inc.
- Stanley M. Filipiak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for capping copper in semiconductor devices
- Patent number 5,447,887
- Issue date Sep 5, 1995
- Motorola, Inc.
- Stanley M. Filipiak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming an intermetallic layer
- Patent number 5,358,901
- Issue date Oct 25, 1994
- Motorola, Inc.
- Robert W. Fiordalice
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a patterned layer using dielectric materials as...
- Patent number 5,310,626
- Issue date May 10, 1994
- Motorola, Inc.
- Mark G. Fernandes
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Method for forming a nitride layer using preheated ammonia
- Patent number 5,188,979
- Issue date Feb 23, 1993
- Motorola Inc.
- Stanley M. Filipiak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for the selective encapsulation of an electrically conducti...
- Patent number 5,126,283
- Issue date Jun 30, 1992
- Motorola, Inc.
- Faivel Pintchovski
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF FORMING A PHOTODETECTOR
- Publication number 20110223706
- Publication date Sep 15, 2011
- JILL C. HILDRETH
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
SEMICONDUCTOR DEVICE WITH HYDROGEN BARRIER AND METHOD THEREFOR
- Publication number 20080261407
- Publication date Oct 23, 2008
- Stanley M. Filipiak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR STRAINING A SEMICONDUCTOR DEVICE
- Publication number 20070298623
- Publication date Dec 27, 2007
- Gregory S. Spencer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming a stressor structure
- Publication number 20070224772
- Publication date Sep 27, 2007
- Freescale Semiconductor, Inc.
- Mark D. Hall
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual plasma treatment barrier film to reduce low-k damage
- Publication number 20070161229
- Publication date Jul 12, 2007
- Freescale Semiconductor, Inc.
- Michael D. Turner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electronic device including transistor structures with sidewall spa...
- Publication number 20070090455
- Publication date Apr 26, 2007
- FREESCALE SEMICONDUCTOR, INC.
- Sangwoo Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming an interlayer dielectric
- Publication number 20060281240
- Publication date Dec 14, 2006
- Paul A. Grudowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming a semiconductor device having a diffusion barrier...
- Publication number 20060202339
- Publication date Sep 14, 2006
- Lynne M. Michaelson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Plasma enhanced nitride layer
- Publication number 20060073698
- Publication date Apr 6, 2006
- Jian Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of making a semiconductor device using treated photoresist
- Publication number 20050181630
- Publication date Aug 18, 2005
- Cesar M. Garza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming a passivation layer for air gap formation and st...
- Publication number 20040119134
- Publication date Jun 24, 2004
- Cindy K. Goldberg
- H01 - BASIC ELECTRIC ELEMENTS

Stanley L. Filipiak

Person

Patents Grantslast 30 patents

Dual plasma treatment barrier film to reduce low-k damage

Semiconductor device with hydrogen barrier and method therefor

Process for forming an electronic device including transistor struc...

Method of forming an interlayer dielectric

Method of forming a semiconductor device having a diffusion barrier...

Method of making a semiconductor device using treated photoresist

Plasma enhanced nitride layer

Method for forming a passivation layer for air gap formation

Semiconductor device, memory cell, and processes for forming them

Reduced water adsorption for interlayer dielectric

Process for forming a combination hardmask and antireflective layer

Method for forming a tensile plasma enhanced nitride capping layer...

Semiconductor device having a titanium-aluminum compound

Process for forming a semiconductor device having an interconnect o...

Copper interconnect structure and method of formation

Method for forming an inlaid via in a semiconductor device

Process for forming a semiconductor device with an antireflective l...

Method for capping copper in semiconductor devices

Process for forming an intermetallic layer

Method for forming a patterned layer using dielectric materials as...

Method for forming a nitride layer using preheated ammonia

Process for the selective encapsulation of an electrically conducti...

Patents Applicationslast 30 patents

METHOD OF FORMING A PHOTODETECTOR

SEMICONDUCTOR DEVICE WITH HYDROGEN BARRIER AND METHOD THEREFOR

METHOD FOR STRAINING A SEMICONDUCTOR DEVICE

Method for forming a stressor structure

Dual plasma treatment barrier film to reduce low-k damage

Electronic device including transistor structures with sidewall spa...

Method of forming an interlayer dielectric

Method of forming a semiconductor device having a diffusion barrier...

Plasma enhanced nitride layer

Method of making a semiconductor device using treated photoresist

Method for forming a passivation layer for air gap formation and st...