STEPHEN S. ST.ONGE

Person

ESSEX JUNCTION, VT, US

People

Patents Grantslast 30 patents

Information Patent Grant
Capturing mutual coupling effects between an integrated circuit chi...
- Patent number 8,640,077
- Issue date Jan 28, 2014
- International Business Machines Corporation
- Robert A. Groves
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Asymmetric silicon-on-insulator (SOI) junction field effect transis...
- Patent number 8,466,501
- Issue date Jun 18, 2013
- International Business Machines Corporation
- Douglas B. Hershberger
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Varied impurity profile region formation for varying breakdown volt...
- Patent number 8,030,167
- Issue date Oct 4, 2011
- International Business Machines Corporation
- Douglas D. Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized device isolation
- Patent number 7,868,423
- Issue date Jan 11, 2011
- International Business Machines Corporation
- John J. Benoit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tuneable semiconductor device with discontinuous portions in the su...
- Patent number 7,709,930
- Issue date May 4, 2010
- International Business Machines Corporation
- Andreas Stricker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar and CMOS integration with reduced contact height
- Patent number 7,701,015
- Issue date Apr 20, 2010
- International Business Machines Corporation
- Zhong-Xiang He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Varied impurity profile region formation for varying breakdown volt...
- Patent number 7,550,787
- Issue date Jun 23, 2009
- International Business Machines Corporation
- Douglas D. Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming channel stop for deep trench isolation prior to...
- Patent number 7,491,614
- Issue date Feb 17, 2009
- International Business Machines Corporation
- Louis D. Lanzerotti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor-insulator-silicide capacitor
- Patent number 7,479,439
- Issue date Jan 20, 2009
- International Business Machines Corporation
- Douglas D. Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Redundant interconnect high current bipolar device and method of fo...
- Patent number 7,317,240
- Issue date Jan 8, 2008
- International Business Machines Corporation
- Michael D. Hulvey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor having raised extrinsic base with selectable sel...
- Patent number 7,253,096
- Issue date Aug 7, 2007
- International Business Machines Corporation
- Marwan H. Khater
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor having raised extrinsic base with selectable sel...
- Patent number 7,002,221
- Issue date Feb 21, 2006
- International Business Machines Corporation
- Marwan H. Khater
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Redundant interconnect high current bipolar device and method of fo...
- Patent number 6,998,699
- Issue date Feb 14, 2006
- International Business Machines Corporation
- Michael D. Hulvey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diffused extrinsic base and method for fabrication
- Patent number 6,900,519
- Issue date May 31, 2005
- International Business Machines Corporation
- Marc W. Cantell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diffused extrinsic base and method for fabrication
- Patent number 6,869,854
- Issue date Mar 22, 2005
- International Business Machines Corporation
- Marc W. Cantell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a stacked poly-poly and MOS capacitor using a...
- Patent number 6,833,299
- Issue date Dec 21, 2004
- International Business Machines Corporation
- Douglas D. Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial base bipolar transistor with raised extrinsic base
- Patent number 6,812,545
- Issue date Nov 2, 2004
- International Business Machines Corporation
- James Stuart Dunn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Redundant interconnect high current bipolar device
- Patent number 6,657,280
- Issue date Dec 2, 2003
- International Business Machines Corporation
- Michael D. Hulvey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitor and method for forming same
- Patent number 6,635,548
- Issue date Oct 21, 2003
- International Business Machines Corporation
- Kerry Bernstein
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating an epitaxial base bipolar transistor with ra...
- Patent number 6,617,220
- Issue date Sep 9, 2003
- International Business Machines Corporation
- James Stuart Dunn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep trench-buried layer array and integrated device structures for...
- Patent number 6,600,199
- Issue date Jul 29, 2003
- International Business Machines Corporation
- Steven H. Voldman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of contacting a silicide-based schottky diode and diode so f...
- Patent number 6,597,050
- Issue date Jul 22, 2003
- International Business Machines Corporation
- James Stuart Dunn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Poly-poly/MOS capacitor having a gate encapsulating first electrode...
- Patent number 6,507,063
- Issue date Jan 14, 2003
- International Business Machines Corporation
- Douglas D. Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for cooling a silicon on insulator device
- Patent number 6,476,483
- Issue date Nov 5, 2002
- International Business Machines Corporation
- Eric Adler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Damascene metal capacitor
- Patent number 6,452,251
- Issue date Sep 17, 2002
- International Business Machines Corporation
- Kerry Bernstein
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for epitaxial bipolar BiCMOS
- Patent number 6,448,124
- Issue date Sep 10, 2002
- International Business Machines Corporation
- Douglas D. Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a poly-poly capacitor with a SiGe BiCMOS inte...
- Patent number 6,440,811
- Issue date Aug 27, 2002
- International Business Machines Corporation
- Douglas Duane Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSCAP design for improved reliability
- Patent number 6,420,747
- Issue date Jul 16, 2002
- International Business Machines Corporation
- Douglas Duane Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitor and method for forming same
- Patent number 6,384,468
- Issue date May 7, 2002
- International Business Machines Corporation
- Kerry Bernstein
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus to match semiconductor device performance
- Patent number 6,329,690
- Issue date Dec 11, 2001
- International Business Machines Corporation
- Kent E. Morrett
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CAPTURING MUTUAL COUPLING EFFECTS BETWEEN AN INTEGRATED CIRCUIT CHI...
- Publication number 20140033149
- Publication date Jan 30, 2014
- International Business Machines Corporation
- Robert A. Groves
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ASYMMETRIC SILICON-ON-INSULATOR (SOI) JUNCTION FIELD EFFECT TRANSIS...
- Publication number 20110284930
- Publication date Nov 24, 2011
- International Business Machines Corporation
- Douglas B. Hershberger
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Optimized Device Isolation
- Publication number 20100117122
- Publication date May 13, 2010
- John J. Benoit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING CHANNEL STOP FOR DEEP TRENCH ISOLATION PRIOR TO DEEP TRENCH...
- Publication number 20090057815
- Publication date Mar 5, 2009
- Louis D. Lanzerotti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR AND CMOS INTEGRATION WITH REDUCED CONTACT HEIGHT
- Publication number 20090039522
- Publication date Feb 12, 2009
- International Business Corporation
- Zhong-Xiang He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR-INSULATOR-SILICIDE CAPACITOR
- Publication number 20080258197
- Publication date Oct 23, 2008
- Douglas D. Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARIED IMPURITY PROFILE REGION FORMATION FOR VARYING BREAKDOWN VOLT...
- Publication number 20070275534
- Publication date Nov 29, 2007
- International Business Machines Corporation
- Douglas D. Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARIED IMPURITY PROFILE REGION FORMATION FOR VARYING BREAKDOWN VOLT...
- Publication number 20060270203
- Publication date Nov 30, 2006
- International Business Machines Corporation
- Douglas D. Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Redundant interconnect high current bipolar device and method of fo...
- Publication number 20060175634
- Publication date Aug 10, 2006
- International Business Machines Corporation
- Michael D. Hulvey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING CHANNEL STOP FOR DEEP TRENCH ISOLATION PRIOR TO DEEP TRENCH...
- Publication number 20060154440
- Publication date Jul 13, 2006
- International Business Machines Corporation
- Louis D. Lanzerotti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Redundant interconnect high current bipolar device and method of fo...
- Publication number 20050189618
- Publication date Sep 1, 2005
- Michael D. Hulvey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR HAVING RAISED EXTRINSIC BASE WITH SELECTABLE SEL...
- Publication number 20050048735
- Publication date Mar 3, 2005
- International Business Machines Corporation
- Marwan H. Khater
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Diffused extrinsic base and method for fabrication
- Publication number 20040222495
- Publication date Nov 11, 2004
- Marc W. Cantell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Diffused extrinsic base and method for fabrication
- Publication number 20040014271
- Publication date Jan 22, 2004
- International Business Machines Corporation
- Marc W. Cantell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxial base bipolar transistor with raised extrinsic base
- Publication number 20030201517
- Publication date Oct 30, 2003
- James Stuart Dunn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating a stacked poly-poly and MOS capacitor using a...
- Publication number 20030092239
- Publication date May 15, 2003
- International Business Machines Corporation
- Douglas D. Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxial base bipolar transistor with raised extrinsic base
- Publication number 20020132438
- Publication date Sep 19, 2002
- James Stuart Dunn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Deep trench-buried layer array and integrated device structures for...
- Publication number 20020084506
- Publication date Jul 4, 2002
- International Business Machines Corporation
- Steven H. Voldman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR EPITAXIAL BIPOLAR BICMOS
- Publication number 20020076874
- Publication date Jun 20, 2002
- DOUGLAS D. COOLBAUGH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSCAP DESIGN FOR IMPROVED RELIABILITY
- Publication number 20020017693
- Publication date Feb 14, 2002
- DOUGLAS DUANE COOLBAUGH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A SELF-ALIGNED, SUB-MINIMUM ISOLATION RING
- Publication number 20010013636
- Publication date Aug 16, 2001
- JAMES S. DUNN
- H01 - BASIC ELECTRIC ELEMENTS

STEPHEN S. ST.ONGE

Person

Patents Grantslast 30 patents

Capturing mutual coupling effects between an integrated circuit chi...

Asymmetric silicon-on-insulator (SOI) junction field effect transis...

Varied impurity profile region formation for varying breakdown volt...

Optimized device isolation

Tuneable semiconductor device with discontinuous portions in the su...

Bipolar and CMOS integration with reduced contact height

Varied impurity profile region formation for varying breakdown volt...

Methods for forming channel stop for deep trench isolation prior to...

Semiconductor-insulator-silicide capacitor

Redundant interconnect high current bipolar device and method of fo...

Bipolar transistor having raised extrinsic base with selectable sel...

Bipolar transistor having raised extrinsic base with selectable sel...

Redundant interconnect high current bipolar device and method of fo...

Diffused extrinsic base and method for fabrication

Diffused extrinsic base and method for fabrication

Method of fabricating a stacked poly-poly and MOS capacitor using a...

Epitaxial base bipolar transistor with raised extrinsic base

Redundant interconnect high current bipolar device

Capacitor and method for forming same

Method for fabricating an epitaxial base bipolar transistor with ra...

Deep trench-buried layer array and integrated device structures for...

Method of contacting a silicide-based schottky diode and diode so f...

Poly-poly/MOS capacitor having a gate encapsulating first electrode...

Method and apparatus for cooling a silicon on insulator device

Damascene metal capacitor

Method for epitaxial bipolar BiCMOS

Method of fabricating a poly-poly capacitor with a SiGe BiCMOS inte...

MOSCAP design for improved reliability

Capacitor and method for forming same

Method and apparatus to match semiconductor device performance

Patents Applicationslast 30 patents

CAPTURING MUTUAL COUPLING EFFECTS BETWEEN AN INTEGRATED CIRCUIT CHI...

ASYMMETRIC SILICON-ON-INSULATOR (SOI) JUNCTION FIELD EFFECT TRANSIS...

Optimized Device Isolation

FORMING CHANNEL STOP FOR DEEP TRENCH ISOLATION PRIOR TO DEEP TRENCH...

BIPOLAR AND CMOS INTEGRATION WITH REDUCED CONTACT HEIGHT

SEMICONDUCTOR-INSULATOR-SILICIDE CAPACITOR

VARIED IMPURITY PROFILE REGION FORMATION FOR VARYING BREAKDOWN VOLT...

VARIED IMPURITY PROFILE REGION FORMATION FOR VARYING BREAKDOWN VOLT...

Redundant interconnect high current bipolar device and method of fo...

FORMING CHANNEL STOP FOR DEEP TRENCH ISOLATION PRIOR TO DEEP TRENCH...

Redundant interconnect high current bipolar device and method of fo...

BIPOLAR TRANSISTOR HAVING RAISED EXTRINSIC BASE WITH SELECTABLE SEL...

Diffused extrinsic base and method for fabrication

Diffused extrinsic base and method for fabrication

Epitaxial base bipolar transistor with raised extrinsic base

Method of fabricating a stacked poly-poly and MOS capacitor using a...

Epitaxial base bipolar transistor with raised extrinsic base

Deep trench-buried layer array and integrated device structures for...

METHOD FOR EPITAXIAL BIPOLAR BICMOS

MOSCAP DESIGN FOR IMPROVED RELIABILITY

A SELF-ALIGNED, SUB-MINIMUM ISOLATION RING