Steven R. Bentley

Person

Tucson, AZ, US

People

Patents Grantslast 30 patents

Information Patent Grant
Multi-channel transistor
- Patent number 12,183,814
- Issue date Dec 31, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Steven J. Bentley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Symmetric arrangement of field plates in semiconductor devices
- Patent number 11,616,127
- Issue date Mar 28, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Johnatan Avraham Kantarovsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate with a buried conductor under an active region for enhanc...
- Patent number 11,569,170
- Issue date Jan 31, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Siva P. Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V compound semiconductor layer stacks with electrical isolation...
- Patent number 11,515,397
- Issue date Nov 29, 2022
- GLOBALFOUNDRIES U.S. INC.
- Anthony K. Stamper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Symmetric arrangement of field plates in semiconductor devices
- Patent number 11,316,019
- Issue date Apr 26, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Johnatan Avraham Kantarovsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with metal structure under an active layer
- Patent number 11,217,533
- Issue date Jan 4, 2022
- GLOBALFOUNDRIES U.S. INC.
- Steven Robert Soss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method, apparatus, and system for fin-over-nanosheet complementary...
- Patent number 11,201,152
- Issue date Dec 14, 2021
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IC structure with short channel gate structure having shorter gate...
- Patent number 11,195,761
- Issue date Dec 7, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet field effect transistor with spacers between sheets
- Patent number 11,101,348
- Issue date Aug 24, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Ruilong Xie
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Uniform bottom spacer for VFET devices
- Patent number 10,916,650
- Issue date Feb 9, 2021
- International Business Machines Corporation
- Steven Bentley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned contact for vertical field effect transistor
- Patent number 10,896,972
- Issue date Jan 19, 2021
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical-transport field-effect transistors with self-aligned contacts
- Patent number 10,797,138
- Issue date Oct 6, 2020
- GLOBALFOUNDRIES Inc.
- Emilie Bourjot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sub-thermal switching slope vertical field effect transistor with d...
- Patent number 10,756,203
- Issue date Aug 25, 2020
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sub-thermal switching slope vertical field effect transistor with d...
- Patent number 10,741,675
- Issue date Aug 11, 2020
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical nanowires formed on upper fin surface
- Patent number 10,685,847
- Issue date Jun 16, 2020
- GLOBALFOUNDRIES Inc.
- Steven Bentley
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for forming replacement metal gate and related structures
- Patent number 10,658,243
- Issue date May 19, 2020
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Product that includes a plurality of vertical transistors with a sh...
- Patent number 10,629,500
- Issue date Apr 21, 2020
- GLOBALFOUNDRIES Inc.
- Steven Soss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Uniform bottom spacer for VFET devices
- Patent number 10,622,475
- Issue date Apr 14, 2020
- International Business Machines Corporation
- Steven Bentley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned contact for vertical field effect transistor
- Patent number 10,622,458
- Issue date Apr 14, 2020
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sub-thermal switching slope vertical field effect transistor with d...
- Patent number 10,553,705
- Issue date Feb 4, 2020
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sub-thermal switching slope vertical field effect transistor with d...
- Patent number 10,546,945
- Issue date Jan 28, 2020
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Work function metal patterning for N-P space between active nanostr...
- Patent number 10,510,620
- Issue date Dec 17, 2019
- GLOBALFOUNDRIES, INC.
- Daniel Chanemougame
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field effect transistor with self-aligned contacts
- Patent number 10,497,798
- Issue date Dec 3, 2019
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming merged source/drain regions on integrated circui...
- Patent number 10,475,904
- Issue date Nov 12, 2019
- GLOBALFOUNDRIES Inc.
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Control of length in gate region during processing of VFET structures
- Patent number 10,461,196
- Issue date Oct 29, 2019
- GLOBALFOUNDRIES Inc.
- Chanro Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming replacement gate structures for vertical transis...
- Patent number 10,446,451
- Issue date Oct 15, 2019
- GLOBALFOUNDRIES Inc.
- Steven Soss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Negative capacitance integration through a gate contact
- Patent number 10,446,659
- Issue date Oct 15, 2019
- GLOBALFOUNDRIES Inc.
- Steven Bentley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried local interconnect in source/drain region
- Patent number 10,418,368
- Issue date Sep 17, 2019
- GLOBALFOUNDRIES Inc.
- Steven J. Bentley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sub-thermal switching slope vertical field effect transistor with d...
- Patent number 10,388,760
- Issue date Aug 20, 2019
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming bottom and top source/drain regions on a vertica...
- Patent number 10,347,745
- Issue date Jul 9, 2019
- GLOBALFOUNDRIES Inc.
- Puneet Harischandra Suvarna
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR WITH REGROWN BARRIER STRUCTURE
- Publication number 20250142860
- Publication date May 1, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Steven J. BENTLEY
Information Patent Application
HIGH-ELECTRON-MOBILITY TRANSISTOR
- Publication number 20250120155
- Publication date Apr 10, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Mark D. LEVY
Information Patent Application
STRUCTURE AND METHOD TO PROVIDE DIELECTRIC LAYER HAVING PLURALITY O...
- Publication number 20250089284
- Publication date Mar 13, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Johnatan Avraham Kantarovsky
Information Patent Application
BIDIRECTIONAL DEVICE
- Publication number 20240194680
- Publication date Jun 13, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Santosh SHARMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-ELECTRON-MOBILITY TRANSISTOR
- Publication number 20240186384
- Publication date Jun 6, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Santosh SHARMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE WITH FIELD PLATES
- Publication number 20240128328
- Publication date Apr 18, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Michael J. ZIERAK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRICALLY PROGRAMMABLE FUSE OVER CRYSTALLINE SEMICONDUCTOR MATER...
- Publication number 20240105595
- Publication date Mar 28, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Johnatan A. Kantarovsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TEMPERATURE DETECTION USING NEGATIVE TEMPERATURE COEFFICIENT RESIST...
- Publication number 20240085247
- Publication date Mar 14, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Santosh Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-ELECTRON-MOBILITY TRANSISTOR
- Publication number 20240079405
- Publication date Mar 7, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Santosh SHARMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED DEPLETION AND ENHANCEMENT MODE GALLIUM NITRIDE HIGH-ELEC...
- Publication number 20240063219
- Publication date Feb 22, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Santosh Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYMMETRIC ARRANGEMENT OF FIELD PLATES IN SEMICONDUCTOR DEVICES
- Publication number 20220165853
- Publication date May 26, 2022
- GLOBALFOUNDRIES U.S. Inc.
- JOHNATAN AVRAHAM KANTAROVSKY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE WITH A BURIED CONDUCTOR UNDER AN ACTIVE REGION FOR ENHANC...
- Publication number 20220108951
- Publication date Apr 7, 2022
- GLOBALFOUNDRIES U.S. Inc.
- SIVA P. ADUSUMILLI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYMMETRIC ARRANGEMENT OF FIELD PLATES IN SEMICONDUCTOR DEVICES
- Publication number 20220037482
- Publication date Feb 3, 2022
- GLOBALFOUNDRIES U.S. Inc.
- JOHNATAN AVRAHAM KANTAROVSKY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V COMPOUND SEMICONDUCTOR LAYER STACKS WITH ELECTRICAL ISOLATION...
- Publication number 20220029000
- Publication date Jan 27, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Anthony K. Stamper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IC STRUCTURE WITH SHORT CHANNEL GATE STRUCTURE HAVING SHORTER GATE...
- Publication number 20210272851
- Publication date Sep 2, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH METAL STRUCTURE UNDER AN ACTIVE LAYER
- Publication number 20210249352
- Publication date Aug 12, 2021
- GLOBALFOUNDRIES U.S. Inc.
- STEVEN ROBERT SOSS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNIFORM BOTTOM SPACER FOR VFET DEVICES
- Publication number 20200194587
- Publication date Jun 18, 2020
- International Business Machines Corporation
- Steven Bentley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED CONTACT FOR VERTICAL FIELD EFFECT TRANSISTOR
- Publication number 20200052096
- Publication date Feb 13, 2020
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUB-THERMAL SWITCHING SLOPE VERTICAL FIELD EFFECT TRANSISTOR WITH D...
- Publication number 20200044058
- Publication date Feb 6, 2020
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUB-THERMAL SWITCHING SLOPE VERTICAL FIELD EFFECT TRANSISTOR WITH D...
- Publication number 20200044057
- Publication date Feb 6, 2020
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET FIELD EFFECT TRANSISTOR WITH SPACERS BETWEEN SHEETS
- Publication number 20200035786
- Publication date Jan 30, 2020
- Ruilong Xie
- B82 - NANO-TECHNOLOGY
Information Patent Application
UNIFORM BOTTOM SPACER FOR VFET DEVICES
- Publication number 20200027983
- Publication date Jan 23, 2020
- International Business Machines Corporation
- Steven Bentley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRODUCT THAT INCLUDES A PLURALITY OF VERTICAL TRANSISTORS WITH A SH...
- Publication number 20200013684
- Publication date Jan 9, 2020
- GLOBALFOUNDRIES INC.
- Steven Soss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING REPLACEMENT METAL GATE AND RELATED STRUCTURES
- Publication number 20190378761
- Publication date Dec 12, 2019
- GLOBALFOUNDRIES INC.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD, APPARATUS, AND SYSTEM FOR FIN-OVER-NANOSHEET COMPLEMENTARY...
- Publication number 20190326286
- Publication date Oct 24, 2019
- GLOBALFOUNDRIES INC.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTORS WITH SELF-ALIGNED CONTACTS
- Publication number 20190312116
- Publication date Oct 10, 2019
- GLOBALFOUNDRIES INC.
- Emilie Bourjot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BITCELL LAYOUT FOR A TWO-PORT SRAM CELL EMPLOYING VERTICAL-TRANSPOR...
- Publication number 20190279990
- Publication date Sep 12, 2019
- GLOBALFOUNDRIES INC.
- Bipul C. Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUB-THERMAL SWITCHING SLOPE VERTICAL FIELD EFFECT TRANSISTOR WITH D...
- Publication number 20190259856
- Publication date Aug 22, 2019
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUB-THERMAL SWITCHING SLOPE VERTICAL FIELD EFFECT TRANSISTOR WITH D...
- Publication number 20190259857
- Publication date Aug 22, 2019
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUB-THERMAL SWITCHING SLOPE VERTICAL FIELD EFFECT TRANSISTOR WITH D...
- Publication number 20190259858
- Publication date Aug 22, 2019
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS

Steven R. Bentley

Person

Patents Grantslast 30 patents

Multi-channel transistor

Symmetric arrangement of field plates in semiconductor devices

Substrate with a buried conductor under an active region for enhanc...

III-V compound semiconductor layer stacks with electrical isolation...

Symmetric arrangement of field plates in semiconductor devices

Semiconductor device with metal structure under an active layer

Method, apparatus, and system for fin-over-nanosheet complementary...

IC structure with short channel gate structure having shorter gate...

Nanosheet field effect transistor with spacers between sheets

Uniform bottom spacer for VFET devices

Self-aligned contact for vertical field effect transistor

Vertical-transport field-effect transistors with self-aligned contacts

Sub-thermal switching slope vertical field effect transistor with d...

Sub-thermal switching slope vertical field effect transistor with d...

Vertical nanowires formed on upper fin surface

Method for forming replacement metal gate and related structures

Product that includes a plurality of vertical transistors with a sh...

Uniform bottom spacer for VFET devices

Self-aligned contact for vertical field effect transistor

Sub-thermal switching slope vertical field effect transistor with d...

Sub-thermal switching slope vertical field effect transistor with d...

Work function metal patterning for N-P space between active nanostr...

Vertical field effect transistor with self-aligned contacts

Methods of forming merged source/drain regions on integrated circui...

Control of length in gate region during processing of VFET structures

Method for forming replacement gate structures for vertical transis...

Negative capacitance integration through a gate contact

Buried local interconnect in source/drain region

Sub-thermal switching slope vertical field effect transistor with d...

Methods of forming bottom and top source/drain regions on a vertica...

Patents Applicationslast 30 patents

HIGH ELECTRON MOBILITY TRANSISTOR WITH REGROWN BARRIER STRUCTURE

HIGH-ELECTRON-MOBILITY TRANSISTOR

STRUCTURE AND METHOD TO PROVIDE DIELECTRIC LAYER HAVING PLURALITY O...

BIDIRECTIONAL DEVICE

HIGH-ELECTRON-MOBILITY TRANSISTOR

DEVICE WITH FIELD PLATES

ELECTRICALLY PROGRAMMABLE FUSE OVER CRYSTALLINE SEMICONDUCTOR MATER...

TEMPERATURE DETECTION USING NEGATIVE TEMPERATURE COEFFICIENT RESIST...

HIGH-ELECTRON-MOBILITY TRANSISTOR

INTEGRATED DEPLETION AND ENHANCEMENT MODE GALLIUM NITRIDE HIGH-ELEC...

SYMMETRIC ARRANGEMENT OF FIELD PLATES IN SEMICONDUCTOR DEVICES

SUBSTRATE WITH A BURIED CONDUCTOR UNDER AN ACTIVE REGION FOR ENHANC...

SYMMETRIC ARRANGEMENT OF FIELD PLATES IN SEMICONDUCTOR DEVICES

III-V COMPOUND SEMICONDUCTOR LAYER STACKS WITH ELECTRICAL ISOLATION...

IC STRUCTURE WITH SHORT CHANNEL GATE STRUCTURE HAVING SHORTER GATE...

SEMICONDUCTOR DEVICE WITH METAL STRUCTURE UNDER AN ACTIVE LAYER

UNIFORM BOTTOM SPACER FOR VFET DEVICES

SELF-ALIGNED CONTACT FOR VERTICAL FIELD EFFECT TRANSISTOR

SUB-THERMAL SWITCHING SLOPE VERTICAL FIELD EFFECT TRANSISTOR WITH D...

SUB-THERMAL SWITCHING SLOPE VERTICAL FIELD EFFECT TRANSISTOR WITH D...

NANOSHEET FIELD EFFECT TRANSISTOR WITH SPACERS BETWEEN SHEETS

UNIFORM BOTTOM SPACER FOR VFET DEVICES

PRODUCT THAT INCLUDES A PLURALITY OF VERTICAL TRANSISTORS WITH A SH...

METHOD FOR FORMING REPLACEMENT METAL GATE AND RELATED STRUCTURES

METHOD, APPARATUS, AND SYSTEM FOR FIN-OVER-NANOSHEET COMPLEMENTARY...

VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTORS WITH SELF-ALIGNED CONTACTS

BITCELL LAYOUT FOR A TWO-PORT SRAM CELL EMPLOYING VERTICAL-TRANSPOR...

SUB-THERMAL SWITCHING SLOPE VERTICAL FIELD EFFECT TRANSISTOR WITH D...

SUB-THERMAL SWITCHING SLOPE VERTICAL FIELD EFFECT TRANSISTOR WITH D...

SUB-THERMAL SWITCHING SLOPE VERTICAL FIELD EFFECT TRANSISTOR WITH D...