Steven S. Lee

Person

Colorado Springs, CO, US

People

Patents Grantslast 30 patents

Information Patent Grant
BI-CMOS integrated circuit
- Patent number 6,943,413
- Issue date Sep 13, 2005
- Hynix Semiconductor Inc.
- Steven S. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
BI-CMOS integrated circuit
- Patent number 6,593,178
- Issue date Jul 15, 2003
- Hyundai Electronics America
- Steven S. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
BI-CMOS integrated circuit
- Patent number 6,249,030
- Issue date Jun 19, 2001
- Hyundai Electronics Industries Co., Ltd.
- Steven S. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar silicon-on-insulator structure and process
- Patent number 6,232,649
- Issue date May 15, 2001
- Hyundai Electronics America
- Steven S. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pillar emitter for BiCMOS devices
- Patent number 6,011,283
- Issue date Jan 4, 2000
- Hyundai Electronics America
- Steven Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabrication of semiconductor fuse with polysilicon plate
- Patent number 5,963,825
- Issue date Oct 5, 1999
- Hyundai Electronics America
- Steven S. Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of fabricating a bipolar integrated structure
- Patent number 5,904,535
- Issue date May 18, 1999
- Hyundai Electronics America
- Steven S. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin-on conductor process for integrated circuits
- Patent number 5,728,626
- Issue date Mar 17, 1998
- AT&T Global Information Solutions Company
- Derryl D. J. Allman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor fuse and method
- Patent number 5,672,905
- Issue date Sep 30, 1997
- AT&T Global Information Solutions Company
- Steven S. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a solid-state ink jet print head
- Patent number 5,581,861
- Issue date Dec 10, 1996
- AT&T Global Information Solutions Company
- Steven S. Lee
- B41 - PRINTING LINING MACHINES TYPEWRITERS STAMPS
Information Patent Grant
Elevated emitter for double poly BICMOS devices
- Patent number 5,557,131
- Issue date Sep 17, 1996
- AT&T Global Information Solutions Company
- Steven Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming titanium silicide local interconnect
- Patent number 5,543,361
- Issue date Aug 6, 1996
- AT&T Global Information Solutions Company
- Steven S. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making BI-CMOS integrated circuit having a polysilicon em...
- Patent number 5,516,718
- Issue date May 14, 1996
- AT&T Global Information Solutions Company
- Steven S. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming an amorphous silicon programmable element
- Patent number 5,447,880
- Issue date Sep 5, 1995
- AT&T Global Information Solutions Company
- Steven S. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming titanium silicide local interconnect
- Patent number 5,443,996
- Issue date Aug 22, 1995
- AT&T Global Information Solutions Company
- Steven S. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming self-aligned titanium silicide by heating in an...
- Patent number 5,288,666
- Issue date Feb 22, 1994
- NCR Corporation
- Steven S. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure for improving gate oxide integrity for a semiconductor fo...
- Patent number 5,248,350
- Issue date Sep 28, 1993
- NCR Corporation
- Steven S. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and process for forming semiconductor field oxide using a...
- Patent number 4,986,879
- Issue date Jan 22, 1991
- NCR Corporation
- Steven S. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor field oxide formation process using a sealing sidewal...
- Patent number 4,923,563
- Issue date May 8, 1990
- NCR Corporation
- Steven S. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming epitaxial silicon on insulator structures using...
- Patent number 4,910,165
- Issue date Mar 20, 1990
- NCR Corporation
- Steven S. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Native oxide reduction for sealing nitride deposition
- Patent number 4,855,258
- Issue date Aug 8, 1989
- NCR Corporation
- Derryl D. J. Allman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation of regions in a CMOS structure using selective epitaxial...
- Patent number 4,820,654
- Issue date Apr 11, 1989
- NCR Corporation
- Steven S. Lee
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
BI-CMOS integrated circuit
- Publication number 20030203559
- Publication date Oct 30, 2003
- Steven S. Lee
- H01 - BASIC ELECTRIC ELEMENTS

Steven S. Lee

Person

Patents Grantslast 30 patents

BI-CMOS integrated circuit

BI-CMOS integrated circuit

BI-CMOS integrated circuit

Bipolar silicon-on-insulator structure and process

Pillar emitter for BiCMOS devices

Method of fabrication of semiconductor fuse with polysilicon plate

Method of fabricating a bipolar integrated structure

Spin-on conductor process for integrated circuits

Semiconductor fuse and method

Method for making a solid-state ink jet print head

Elevated emitter for double poly BICMOS devices

Process for forming titanium silicide local interconnect

Method of making BI-CMOS integrated circuit having a polysilicon em...

Method for forming an amorphous silicon programmable element

Process for forming titanium silicide local interconnect

Process for forming self-aligned titanium silicide by heating in an...

Structure for improving gate oxide integrity for a semiconductor fo...

Structure and process for forming semiconductor field oxide using a...

Semiconductor field oxide formation process using a sealing sidewal...

Method for forming epitaxial silicon on insulator structures using...

Native oxide reduction for sealing nitride deposition

Isolation of regions in a CMOS structure using selective epitaxial...

Patents Applicationslast 30 patents

BI-CMOS integrated circuit