Sundar Narayanan

Person

Cupertino, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Resistive switching memory devices and method(s) for forming the re...
- Patent number 12,075,712
- Issue date Aug 27, 2024
- Crossbar, Inc.
- Sundar Narayanan
Information Patent Grant
Resistive switching memory having confined filament formation and m...
- Patent number 11,997,932
- Issue date May 28, 2024
- Crossbar, Inc.
- Sundar Narayanan
Information Patent Grant
Using aluminum as etch stop layer
- Patent number 11,944,020
- Issue date Mar 26, 2024
- Crossbar, Inc.
- Sundar Narayanan
Information Patent Grant
Resistive random access memory and fabrication techniques
- Patent number 11,793,093
- Issue date Oct 17, 2023
- Crossbar, Inc.
- Sung-Hyun Jo
Information Patent Grant
Using aluminum as etch stop layer
- Patent number 10,873,023
- Issue date Dec 22, 2020
- Crossbar, Inc.
- Sundar Narayanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory stack liner comprising dielectric block layer material
- Patent number 10,749,110
- Issue date Aug 18, 2020
- Crossbar, Inc.
- Sundar Narayanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Regulating interface layer formation for two-terminal memory
- Patent number 10,693,062
- Issue date Jun 23, 2020
- Crossbar, Inc.
- Sundar Narayanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Liner layer for dielectric block layer
- Patent number 10,522,754
- Issue date Dec 31, 2019
- Crossbar, Inc.
- Sundar Narayanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrative resistive memory in backend metal layers
- Patent number 10,319,908
- Issue date Jun 11, 2019
- Crossbar, Inc.
- Sundar Narayanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Scalable silicon based resistive memory device
- Patent number 10,290,801
- Issue date May 14, 2019
- Crossbar, Inc.
- Sundar Narayanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Recessed high voltage metal oxide semiconductor transistor for RRAM...
- Patent number 10,115,819
- Issue date Oct 30, 2018
- Crossbar, Inc.
- Harry Yue Gee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithically integrated resistive memory using integrated-circuit...
- Patent number 10,096,653
- Issue date Oct 9, 2018
- Crossbar, Inc.
- Sundar Narayanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flatness of memory cell surfaces
- Patent number 10,062,845
- Issue date Aug 28, 2018
- Crossbar, Inc.
- Harry Yue Gee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithically integrated resistive memory using integrated-circuit...
- Patent number 9,741,765
- Issue date Aug 22, 2017
- Crossbar, Inc.
- Sundar Narayanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic memory comprising 1T1R code memory and 1TnR storage clas...
- Patent number 9,697,874
- Issue date Jul 4, 2017
- Crossbar, Inc.
- Mehdi Asnaashari
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive random access memory (RRAM) cell and method for forming t...
- Patent number 9,595,670
- Issue date Mar 14, 2017
- Crossbar, Inc.
- Harry Yue Gee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mitigating damage from a chemical mechanical planarization process
- Patent number 9,437,814
- Issue date Sep 6, 2016
- Crossbar, Inc.
- Harry Yue Gee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for surface roughness reduction after silicon germanium thin...
- Patent number 9,425,046
- Issue date Aug 23, 2016
- Crossbar, Inc.
- Harry Yue Gee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low temperature in-situ doped silicon-based conductor material for...
- Patent number 9,343,668
- Issue date May 17, 2016
- Crossbar, Inc.
- Steve Maxwell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Regulating interface layer growth with N2O for two-terminal memory
- Patent number 9,209,396
- Issue date Dec 8, 2015
- Crossbar, Inc.
- Sundar Narayanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxide-nitride stack gate dielectric
- Patent number 8,445,381
- Issue date May 21, 2013
- Cypress Semiconductor Corporation
- Krishnaswamy Ramkumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxide-nitride stack gate dielectric
- Patent number 7,371,637
- Issue date May 13, 2008
- Cypress Semiconductor Corporation
- Krishnaswamy Ramkumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Removing whisker defects
- Patent number 7,351,663
- Issue date Apr 1, 2008
- Cypress Semiconductor Corporation
- Alex Kabansky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective oxidation of gate stack
- Patent number 7,189,652
- Issue date Mar 13, 2007
- Cypress Semiconductor Corporation
- Alain Blosse
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making uniform oxide layer
- Patent number 7,172,914
- Issue date Feb 6, 2007
- Cypress Semiconductor Corporation
- Sundar Narayanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming nitrided oxide in a hot wall single wafer furnace
- Patent number 7,094,707
- Issue date Aug 22, 2006
- Cypress Semiconductor Corporation
- Krishnaswamy Ramkumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a narrow gate, and product produced thereby
- Patent number 6,964,929
- Issue date Nov 15, 2005
- Cypress Semiconductor Corporation
- Sundar Narayanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deuterium incorporated nitride
- Patent number 6,943,126
- Issue date Sep 13, 2005
- Cypress Semiconductor Corporation
- Sundar Narayanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for determining a concentration profile of an...
- Patent number 6,905,893
- Issue date Jun 14, 2005
- Cypress Semiconductor Corp.
- Sundar Narayanan
- G01 - MEASURING TESTING
Information Patent Grant
Nitride spacer formation
- Patent number 6,803,321
- Issue date Oct 12, 2004
- Cypress Semiconductor Corporation
- Alain Blosse
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SUBSTRATE PROCESS OPERATION ANALYSIS APPLICATION AND GENERATION OF...
- Publication number 20240427308
- Publication date Dec 26, 2024
- Applied Materials, Inc.
- Rituraj Nandan
- G05 - CONTROLLING REGULATING
Information Patent Application
DETERMINING SUBSTRATE CHARACTERISTICS BY VIRTUAL SUBSTRATE MEASUREMENT
- Publication number 20240152675
- Publication date May 9, 2024
- Applied Materials, Inc.
- Dheeraj Kumar
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
GENERATION AND UTILIZATION OF VIRTUAL FEATURES FOR PROCESS MODELING
- Publication number 20240086597
- Publication date Mar 14, 2024
- Applied Materials, Inc.
- Sundar Narayanan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
RESISTIVE SWITCHING MEMORY DEVICES AND METHOD(S) FOR FORMING THE RE...
- Publication number 20220320429
- Publication date Oct 6, 2022
- Crossbar, Inc.
- Sundar Narayanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE SWITCHING MEMORY HAVING CONFINED FILAMENT FORMATION AND M...
- Publication number 20220320432
- Publication date Oct 6, 2022
- Crossbar, Inc.
- Sundar Narayanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARYING NITROGEN CONTENT IN SWITCHING LAYER OF TWO-TERMINAL RESISTI...
- Publication number 20220320431
- Publication date Oct 6, 2022
- Crossbar, Inc.
- Sundar Narayanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
USING ALUMINUM AS ETCH STOP LAYER
- Publication number 20210151671
- Publication date May 20, 2021
- Crossbar, Inc.
- Sundar Narayanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY AND FABRICATION TECHNIQUES
- Publication number 20200259081
- Publication date Aug 13, 2020
- Crossbar, Inc.
- Sung-Hyun JO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LINER LAYER FOR DIELECTRIC BLOCK LAYER
- Publication number 20170365780
- Publication date Dec 21, 2017
- Crossbar, Inc.
- Sundar Narayanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
USING ALUMINUM AS ETCH STOP LAYER
- Publication number 20170288139
- Publication date Oct 5, 2017
- Crossbar, Inc.
- Sundar Narayanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REGULATING INTERFACE LAYER FORMATION FOR TWO-TERMINAL MEMORY
- Publication number 20170162783
- Publication date Jun 8, 2017
- Crossbar, Inc.
- Sundar Narayanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RECESSED HIGH VOLTAGE METAL OXIDE SEMICONDUCTOR TRANSISTOR FOR RRAM...
- Publication number 20160351625
- Publication date Dec 1, 2016
- Crossbar, Inc.
- Harry Yue Gee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATIVE RESISTIVE MEMORY IN BACKEND METAL LAYERS
- Publication number 20150318333
- Publication date Nov 5, 2015
- Crossbar, Inc.
- Sundar Narayanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHICALLY INTEGRATED RESISTIVE MEMORY USING INTEGRATED-CIRCUIT...
- Publication number 20150243886
- Publication date Aug 27, 2015
- Crossbar, Inc.
- Sundar Narayanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCALABLE SILICON BASED RESISTIVE MEMORY DEVICE
- Publication number 20150228893
- Publication date Aug 13, 2015
- Crossbar, Inc.
- Sundar Narayanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REGULATING INTERFACE LAYER GROWTH WITH N2O FOR TWO-TERMINAL MEMORY
- Publication number 20140335675
- Publication date Nov 13, 2014
- Sundar NARAYANAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW TEMPERATURE IN-SITU DOPED SILICON-BASED CONDUCTOR MATERIAL FOR...
- Publication number 20140264250
- Publication date Sep 18, 2014
- Crossbar, Inc.
- Steve MAXWELL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OXIDE-NITRIDE STACK GATE DIELECTRIC
- Publication number 20080093680
- Publication date Apr 24, 2008
- Krishnaswamy Ramkumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Oxide-nitride stack gate dielectric
- Publication number 20050067663
- Publication date Mar 31, 2005
- Krishnaswamy Ramkumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for growing ultra thin nitrided oxide
- Publication number 20030073290
- Publication date Apr 17, 2003
- Krishnaswamy Ramkumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Novel self monitoring process for ultra thin gate oxidation
- Publication number 20030073255
- Publication date Apr 17, 2003
- Sundar Narayanan
- H01 - BASIC ELECTRIC ELEMENTS

Sundar Narayanan

Person

Patents Grantslast 30 patents

Resistive switching memory devices and method(s) for forming the re...

Resistive switching memory having confined filament formation and m...

Using aluminum as etch stop layer

Resistive random access memory and fabrication techniques

Using aluminum as etch stop layer

Memory stack liner comprising dielectric block layer material

Regulating interface layer formation for two-terminal memory

Liner layer for dielectric block layer

Integrative resistive memory in backend metal layers

Scalable silicon based resistive memory device

Recessed high voltage metal oxide semiconductor transistor for RRAM...

Monolithically integrated resistive memory using integrated-circuit...

Flatness of memory cell surfaces

Monolithically integrated resistive memory using integrated-circuit...

Monolithic memory comprising 1T1R code memory and 1TnR storage clas...

Resistive random access memory (RRAM) cell and method for forming t...

Mitigating damage from a chemical mechanical planarization process

Method for surface roughness reduction after silicon germanium thin...

Low temperature in-situ doped silicon-based conductor material for...

Regulating interface layer growth with N2O for two-terminal memory

Oxide-nitride stack gate dielectric

Oxide-nitride stack gate dielectric

Removing whisker defects

Selective oxidation of gate stack

Method of making uniform oxide layer

Method of forming nitrided oxide in a hot wall single wafer furnace

Method of forming a narrow gate, and product produced thereby

Deuterium incorporated nitride

Method and structure for determining a concentration profile of an...

Nitride spacer formation

Patents Applicationslast 30 patents

SUBSTRATE PROCESS OPERATION ANALYSIS APPLICATION AND GENERATION OF...

DETERMINING SUBSTRATE CHARACTERISTICS BY VIRTUAL SUBSTRATE MEASUREMENT

GENERATION AND UTILIZATION OF VIRTUAL FEATURES FOR PROCESS MODELING

RESISTIVE SWITCHING MEMORY DEVICES AND METHOD(S) FOR FORMING THE RE...

RESISTIVE SWITCHING MEMORY HAVING CONFINED FILAMENT FORMATION AND M...

VARYING NITROGEN CONTENT IN SWITCHING LAYER OF TWO-TERMINAL RESISTI...

USING ALUMINUM AS ETCH STOP LAYER

RESISTIVE RANDOM ACCESS MEMORY AND FABRICATION TECHNIQUES

LINER LAYER FOR DIELECTRIC BLOCK LAYER

USING ALUMINUM AS ETCH STOP LAYER

REGULATING INTERFACE LAYER FORMATION FOR TWO-TERMINAL MEMORY

RECESSED HIGH VOLTAGE METAL OXIDE SEMICONDUCTOR TRANSISTOR FOR RRAM...

INTEGRATIVE RESISTIVE MEMORY IN BACKEND METAL LAYERS

MONOLITHICALLY INTEGRATED RESISTIVE MEMORY USING INTEGRATED-CIRCUIT...

SCALABLE SILICON BASED RESISTIVE MEMORY DEVICE

REGULATING INTERFACE LAYER GROWTH WITH N2O FOR TWO-TERMINAL MEMORY

LOW TEMPERATURE IN-SITU DOPED SILICON-BASED CONDUCTOR MATERIAL FOR...

OXIDE-NITRIDE STACK GATE DIELECTRIC

Oxide-nitride stack gate dielectric

Method for growing ultra thin nitrided oxide

Novel self monitoring process for ultra thin gate oxidation