Sung-Taeg Kang

Person

Austin, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Methods and structures for a split gate memory cell structure
- Patent number 10,153,349
- Issue date Dec 11, 2018
- NXP USA, INC.
- Cheong Min Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Scalable split gate memory cell array
- Patent number 9,685,339
- Issue date Jun 20, 2017
- NXP USA, INC.
- Jane A. Yater
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and structures for a split gate memory cell structure
- Patent number 9,590,058
- Issue date Mar 7, 2017
- NXP USA, INC.
- Cheong Min Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory (NVM) cell and a method of making
- Patent number 9,397,201
- Issue date Jul 19, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Jacob T. Williams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming different voltage devices with high-k metal gate
- Patent number 9,368,499
- Issue date Jun 14, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Cheong Min Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to form self-aligned high density nanocrystals
- Patent number 9,356,106
- Issue date May 31, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Euhngi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming contact landing regions in split-gate non-volat...
- Patent number 9,331,092
- Issue date May 3, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Jane A. Yater
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of a non-volatile memory (NVM) cell and a logic transis...
- Patent number 9,318,568
- Issue date Apr 19, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Asanga H. Perera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to form a polysilicon nanocrystal thin film storage bitcell...
- Patent number 9,275,864
- Issue date Mar 1, 2016
- Freescale Semiconductor,INC
- Asanga H Perera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated split gate non-volatile memory cell and logic device
- Patent number 9,252,246
- Issue date Feb 2, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Asanga H Perera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory (NVM) cell
- Patent number 9,219,167
- Issue date Dec 22, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Jacob T. Williams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split-gate memory cells having select-gate sidewall metal silicide...
- Patent number 9,165,652
- Issue date Oct 20, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Sung-Taeg Kang
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of forming different voltage devices with high-K metal gate
- Patent number 9,142,566
- Issue date Sep 22, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Cheong Min Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory (NVM) and high-k and metal gate integration usi...
- Patent number 9,129,855
- Issue date Sep 8, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Asanga H Perera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split gate non-volatile memory (NVM) cell and method therefor
- Patent number 9,112,047
- Issue date Aug 18, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Sung-Taeg Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated split gate non-volatile memory cell and logic structure
- Patent number 9,082,650
- Issue date Jul 14, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Asanga H. Perera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming contact landing regions in split-gate non-volat...
- Patent number 9,054,208
- Issue date Jun 9, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Jane A. Yater
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and systems for gate dimension control in multi-gate struct...
- Patent number 9,018,694
- Issue date Apr 28, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Sung-Taeg Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory (NVM) and high voltage transistor integration
- Patent number 9,006,093
- Issue date Apr 14, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Cheong Min Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of gate strapping in split-gate memory cell with inlaid gate
- Patent number 8,969,940
- Issue date Mar 3, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Jane A Yater
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split gate non-volatile memory cell
- Patent number 8,962,416
- Issue date Feb 24, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Brian A. Winstead
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split gate programming
- Patent number 8,953,378
- Issue date Feb 10, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Cheong Min Hong
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory (NVM) and high-K and metal gate integration usi...
- Patent number 8,901,632
- Issue date Dec 2, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Asanga H. Perera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a non-volatile memory (NVM) cell structure
- Patent number 8,884,358
- Issue date Nov 11, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Brian A. Winstead
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory (NVM) cell, high voltage transistor, and high-K...
- Patent number 8,877,585
- Issue date Nov 4, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Asanga H. Perera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split gate flash cell
- Patent number 8,853,027
- Issue date Oct 7, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Cheong Min Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and systems for gate dimension control in multi-gate struct...
- Patent number 8,778,742
- Issue date Jul 15, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Sung-Taeg Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and systems for erase biasing of split-gate non-volatile me...
- Patent number 8,724,399
- Issue date May 13, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Brian A. Winstead
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device having different non-volatile memories having...
- Patent number 8,679,912
- Issue date Mar 25, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Sung-Taeg Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory (NVM) cell for endurance and method of making
- Patent number 8,669,609
- Issue date Mar 11, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Sung-Taeg Kang
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
METHODS AND STRUCTURES FOR A SPLIT GATE MEMORY CELL STRUCTURE
- Publication number 20170194444
- Publication date Jul 6, 2017
- NXP USA, Inc.
- CHEONG MIN HONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING A SPLIT GATE MEMORY CELL
- Publication number 20160126327
- Publication date May 5, 2016
- FREESCALE SEMICONDUCTOR, INC.
- WEIZE CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION OF A NON-VOLATILE MEMORY (NVM) CELL AND A LOGIC TRANSIS...
- Publication number 20160087058
- Publication date Mar 24, 2016
- ASANGA H. PERERA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO FORM SELF-ALIGNED HIGH DENSITY NANOCRYSTALS
- Publication number 20160071943
- Publication date Mar 10, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Euhngi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY (NVM) CELL AND A METHOD OF MAKING
- Publication number 20160071960
- Publication date Mar 10, 2016
- FREESCALE SEMICONDUCTOR, INC.
- JACOB T. WILLIAMS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A MEMORY STRUCTURE HAVING NANOCRYSTALS
- Publication number 20160049303
- Publication date Feb 18, 2016
- FREESCALE SEMICONDUCTOR, INC.
- EUHNGI LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming Different Voltage Devices with High-K Metal Gate
- Publication number 20150380408
- Publication date Dec 31, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Cheong Min Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods For Forming Contact Landing Regions In Split-Gate Non-Volat...
- Publication number 20150236035
- Publication date Aug 20, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Jane A. Yater
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY (NVM) CELL AND A METHOD OF MAKING
- Publication number 20150179816
- Publication date Jun 25, 2015
- JACOB T. WILLIAMS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY (NVM) AND HIGH-K AND METAL GATE INTEGRATION USI...
- Publication number 20150091079
- Publication date Apr 2, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Asanga H. Perera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods For Forming Contact Landing Regions In Split-Gate Non-Volat...
- Publication number 20150069490
- Publication date Mar 12, 2015
- JANE A. YATER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming Different Voltage Devices with High-K Metal Gate
- Publication number 20150069524
- Publication date Mar 12, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Cheong Min Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to Form a Polysilicon Nanocrystal Thin Film Storage Bitcell...
- Publication number 20150054044
- Publication date Feb 26, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Asanga H. Perera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED SPLIT GATE NON-VOLATILE MEMORY CELL AND LOGIC STRUCTURE
- Publication number 20150054049
- Publication date Feb 26, 2015
- Asanga H. PERERA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED SPLIT GATE NON-VOLATILE MEMORY CELL AND LOGIC DEVICE
- Publication number 20150054050
- Publication date Feb 26, 2015
- ASANGA H. PERERA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT GATE NON-VOLATILE MEMORY CELL
- Publication number 20150035034
- Publication date Feb 5, 2015
- BRIAN A. WINSTEAD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY (NVM) AND HIGH VOLTAGE TRANSISTOR INTEGRATION
- Publication number 20150001612
- Publication date Jan 1, 2015
- CHEONG MIN HONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND STRUCTURES FOR A SPLIT GATE MEMORY CELL STRUCTURE
- Publication number 20150001606
- Publication date Jan 1, 2015
- Cheong Min Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND STRUCTURES FOR SPLIT GATE MEMORY
- Publication number 20140357072
- Publication date Dec 4, 2014
- JINMIAO J. SHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCALABLE SPLIT GATE MEMORY CELL ARRAY
- Publication number 20140319593
- Publication date Oct 30, 2014
- Jane A. YATER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods And Systems For Gate Dimension Control In Multi-Gate Struct...
- Publication number 20140319597
- Publication date Oct 30, 2014
- Freescale Semiconductor, Inc.
- Sung-Taeg Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT GATE NON-VOLATILE MEMORY (NVM) CELL AND METHOD THEREFOR
- Publication number 20140239372
- Publication date Aug 28, 2014
- Sung-Taeg Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-Volatile Memory Cells Having Carbon Impurities and Related Manu...
- Publication number 20140209995
- Publication date Jul 31, 2014
- Cheong Min Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING A NON-VOLATILE MEMORY (NVM) CELL STRUCTURE
- Publication number 20140203347
- Publication date Jul 24, 2014
- BRIAN A. WINSTEAD
- B82 - NANO-TECHNOLOGY
Information Patent Application
Split Gate Flash Cell
- Publication number 20140091380
- Publication date Apr 3, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Cheong Min Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT-GATE MEMORY CELLS HAVING SELECT-GATE SIDEWALL METAL SILICIDE...
- Publication number 20140050029
- Publication date Feb 20, 2014
- Sung-Taeg Kang
- G11 - INFORMATION STORAGE
Information Patent Application
SPLIT GATE PROGRAMMING
- Publication number 20140003155
- Publication date Jan 2, 2014
- CHEONG MIN HONG
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS AND SYSTEMS FOR ERASE BIASING OF SPLIT-GATE NON-VOLATILE ME...
- Publication number 20130279267
- Publication date Oct 24, 2013
- Brian A. Winstead
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE HAVING DIFFERENT NON-VOLATILE MEMORIES HAVING...
- Publication number 20130193506
- Publication date Aug 1, 2013
- SUNG-TAEG KANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A SEMICONDUCTOR DEVICE HAVING NANOCRYSTALS
- Publication number 20120264282
- Publication date Oct 18, 2012
- Sung-Taeg Kang
- B82 - NANO-TECHNOLOGY

Sung-Taeg Kang

Person

Patents Grantslast 30 patents

Methods and structures for a split gate memory cell structure

Scalable split gate memory cell array

Methods and structures for a split gate memory cell structure

Non-volatile memory (NVM) cell and a method of making

Method of forming different voltage devices with high-k metal gate

Method to form self-aligned high density nanocrystals

Methods for forming contact landing regions in split-gate non-volat...

Integration of a non-volatile memory (NVM) cell and a logic transis...

Method to form a polysilicon nanocrystal thin film storage bitcell...

Integrated split gate non-volatile memory cell and logic device

Non-volatile memory (NVM) cell

Split-gate memory cells having select-gate sidewall metal silicide...

Method of forming different voltage devices with high-K metal gate

Non-volatile memory (NVM) and high-k and metal gate integration usi...

Split gate non-volatile memory (NVM) cell and method therefor

Integrated split gate non-volatile memory cell and logic structure

Methods for forming contact landing regions in split-gate non-volat...

Methods and systems for gate dimension control in multi-gate struct...

Non-volatile memory (NVM) and high voltage transistor integration

Method of gate strapping in split-gate memory cell with inlaid gate

Split gate non-volatile memory cell

Split gate programming

Non-volatile memory (NVM) and high-K and metal gate integration usi...

Method of making a non-volatile memory (NVM) cell structure

Non-volatile memory (NVM) cell, high voltage transistor, and high-K...

Split gate flash cell

Methods and systems for gate dimension control in multi-gate struct...

Methods and systems for erase biasing of split-gate non-volatile me...

Semiconductor device having different non-volatile memories having...

Non-volatile memory (NVM) cell for endurance and method of making

Patents Applicationslast 30 patents

METHODS AND STRUCTURES FOR A SPLIT GATE MEMORY CELL STRUCTURE

METHOD OF MAKING A SPLIT GATE MEMORY CELL

INTEGRATION OF A NON-VOLATILE MEMORY (NVM) CELL AND A LOGIC TRANSIS...

METHOD TO FORM SELF-ALIGNED HIGH DENSITY NANOCRYSTALS

NON-VOLATILE MEMORY (NVM) CELL AND A METHOD OF MAKING

METHOD FOR FORMING A MEMORY STRUCTURE HAVING NANOCRYSTALS

Method of Forming Different Voltage Devices with High-K Metal Gate

Methods For Forming Contact Landing Regions In Split-Gate Non-Volat...

NON-VOLATILE MEMORY (NVM) CELL AND A METHOD OF MAKING

NON-VOLATILE MEMORY (NVM) AND HIGH-K AND METAL GATE INTEGRATION USI...

Methods For Forming Contact Landing Regions In Split-Gate Non-Volat...

Method of Forming Different Voltage Devices with High-K Metal Gate

Method to Form a Polysilicon Nanocrystal Thin Film Storage Bitcell...

INTEGRATED SPLIT GATE NON-VOLATILE MEMORY CELL AND LOGIC STRUCTURE

INTEGRATED SPLIT GATE NON-VOLATILE MEMORY CELL AND LOGIC DEVICE

SPLIT GATE NON-VOLATILE MEMORY CELL

NON-VOLATILE MEMORY (NVM) AND HIGH VOLTAGE TRANSISTOR INTEGRATION

METHODS AND STRUCTURES FOR A SPLIT GATE MEMORY CELL STRUCTURE

METHODS AND STRUCTURES FOR SPLIT GATE MEMORY

SCALABLE SPLIT GATE MEMORY CELL ARRAY

Methods And Systems For Gate Dimension Control In Multi-Gate Struct...

SPLIT GATE NON-VOLATILE MEMORY (NVM) CELL AND METHOD THEREFOR

Non-Volatile Memory Cells Having Carbon Impurities and Related Manu...

METHOD OF MAKING A NON-VOLATILE MEMORY (NVM) CELL STRUCTURE

Split Gate Flash Cell

SPLIT-GATE MEMORY CELLS HAVING SELECT-GATE SIDEWALL METAL SILICIDE...

SPLIT GATE PROGRAMMING

METHODS AND SYSTEMS FOR ERASE BIASING OF SPLIT-GATE NON-VOLATILE ME...

SEMICONDUCTOR DEVICE HAVING DIFFERENT NON-VOLATILE MEMORIES HAVING...

METHOD FOR FORMING A SEMICONDUCTOR DEVICE HAVING NANOCRYSTALS