Sunil V. Hattangady

Person

McKinney, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor with a nitrided silicon gate oxide and method
- Patent number 6,956,267
- Issue date Oct 18, 2005
- Texas Instruments Incorporated
- Sunil V. Hattangady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for annealing ultra-thin, high quality gate oxide layers usi...
- Patent number 6,780,719
- Issue date Aug 24, 2004
- Texas Instruments Incorporated
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor with a nitrided silicon gate oxide and method
- Patent number 6,716,695
- Issue date Apr 6, 2004
- Texas Instruments Incorporated
- Sunil V. Hattangady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of ammonia annealing of ultra-thin silicon dioxide layers fo...
- Patent number 6,632,747
- Issue date Oct 14, 2003
- Texas Instruments Incorporated
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for uniform nitridization of ultra-thin silicon dioxide laye...
- Patent number 6,610,614
- Issue date Aug 26, 2003
- Texas Instruments Incorporated
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Controllable oxidation technique for the formation of high-quality...
- Patent number 6,423,648
- Issue date Jul 23, 2002
- Texas Instruments Incorporated
- Ming Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process to produce ultrathin crystalline silicon nitride on Si (111...
- Patent number 6,420,729
- Issue date Jul 16, 2002
- Texas Instruments Incorporated
- Robert M. Wallace
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication technique for controlled incorporation of nitrogen in g...
- Patent number 6,399,445
- Issue date Jun 4, 2002
- Texas Instruments Incorporated
- Sunil V. Hattangady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Controllable oxidation technique for high quality ultrathin gate ox...
- Patent number 6,352,941
- Issue date Mar 5, 2002
- Texas Instruments Incorporated
- Ming Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitridation for split gate multiple voltage devices
- Patent number 6,331,492
- Issue date Dec 18, 2001
- Texas Instruments Incorporated
- George R. Misium
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked/composite gate dielectric which incorporates nitrogen at an...
- Patent number 6,323,114
- Issue date Nov 27, 2001
- Texas Instruments Incorporated
- Sunil V. Hattangady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process to produce ultrathin crystalline silicon nitride on Si(111)...
- Patent number 6,277,681
- Issue date Aug 21, 2001
- Texas Instruments Incorporated
- Robert M. Wallace
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low temperature process for multiple voltage devices
- Patent number 6,268,296
- Issue date Jul 31, 2001
- Texas Instruments Incorporated
- George R. Misium
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Remote plasma nitridation to allow selectively etching of oxide
- Patent number 6,261,973
- Issue date Jul 17, 2001
- Texas Instruments Incorporated
- George R. Misium
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for polycrystalline silicon gates and high-K dielectric com...
- Patent number 6,251,761
- Issue date Jun 26, 2001
- Texas Instruments Incorporated
- Mark S. Rodder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Remote plasma nitridation for contact etch stop
- Patent number 6,140,024
- Issue date Oct 31, 2000
- Texas Instruments Incorporated
- George R. Misium
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming thin silicon nitride or silicon oxynitride gate d...
- Patent number 6,136,654
- Issue date Oct 24, 2000
- Texas Instruments Incorporated
- Robert Kraft
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming multiple gate oxide thicknesses using high densit...
- Patent number 6,110,842
- Issue date Aug 29, 2000
- Texas Instruments Incorporated
- Yasutoshi Okuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having dual gate and method of formation
- Patent number 5,989,962
- Issue date Nov 23, 1999
- Texas Instruments Incorporated
- Thomas C. Holloway
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an integrated circuit having both low voltage and...
- Patent number 5,970,345
- Issue date Oct 19, 1999
- Texas Instruments Incorporated
- Sunil V. Hattangady
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor with a nitrided silicon gate oxide and method
- Publication number 20040159898
- Publication date Aug 19, 2004
- Sunil V. Hattangady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Flash memory array integrally formed with another device and method...
- Publication number 20030173615
- Publication date Sep 18, 2003
- Kemal Tamer San
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having a dielectric layer with a uniform nitro...
- Publication number 20030157773
- Publication date Aug 21, 2003
- Jerry Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method
- Publication number 20030143813
- Publication date Jul 31, 2003
- TEXAS INSTRUMENTS INCORPORATED
- Rajesh B. Khamankar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having a dielectric layer with a uniform nitro...
- Publication number 20030080389
- Publication date May 1, 2003
- Jerry Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for annealing ultra-thin, high quality gate oxide layers usi...
- Publication number 20020197886
- Publication date Dec 26, 2002
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of ammonia annealing of ultra-thin silicon dioxide layers fo...
- Publication number 20020197883
- Publication date Dec 26, 2002
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for uniform nitridization of ultra-thin silicon dioxide laye...
- Publication number 20020197880
- Publication date Dec 26, 2002
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-thickness oxide growth with in-situ scanned laser heating
- Publication number 20020098712
- Publication date Jul 25, 2002
- Jaideep Mavoori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated dielectric and method
- Publication number 20020025626
- Publication date Feb 28, 2002
- Sunil Hattangady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDATION FOR SPLIT GATE MULTIPLE VOLTAGE DEVICES
- Publication number 20010021588
- Publication date Sep 13, 2001
- GEORGE R. MISIUM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process to produce ultrathin crystalline silicon nitride on Si (111...
- Publication number 20010002709
- Publication date Jun 7, 2001
- Robert M. Wallace
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Controllable oxidation technique for high quality ultra-thin gate o...
- Publication number 20010001074
- Publication date May 10, 2001
- Ming Hwang
- H01 - BASIC ELECTRIC ELEMENTS

Sunil V. Hattangady

Person

Patents Grantslast 30 patents

Semiconductor with a nitrided silicon gate oxide and method

Method for annealing ultra-thin, high quality gate oxide layers usi...

Semiconductor with a nitrided silicon gate oxide and method

Method of ammonia annealing of ultra-thin silicon dioxide layers fo...

Method for uniform nitridization of ultra-thin silicon dioxide laye...

Controllable oxidation technique for the formation of high-quality...

Process to produce ultrathin crystalline silicon nitride on Si (111...

Fabrication technique for controlled incorporation of nitrogen in g...

Controllable oxidation technique for high quality ultrathin gate ox...

Nitridation for split gate multiple voltage devices

Stacked/composite gate dielectric which incorporates nitrogen at an...

Process to produce ultrathin crystalline silicon nitride on Si(111)...

Low temperature process for multiple voltage devices

Remote plasma nitridation to allow selectively etching of oxide

Process for polycrystalline silicon gates and high-K dielectric com...

Remote plasma nitridation for contact etch stop

Method of forming thin silicon nitride or silicon oxynitride gate d...

Method of forming multiple gate oxide thicknesses using high densit...

Semiconductor device having dual gate and method of formation

Method of forming an integrated circuit having both low voltage and...

Patents Applicationslast 30 patents

Semiconductor with a nitrided silicon gate oxide and method

Flash memory array integrally formed with another device and method...

Semiconductor device having a dielectric layer with a uniform nitro...

Semiconductor device and method

Semiconductor device having a dielectric layer with a uniform nitro...

Method for annealing ultra-thin, high quality gate oxide layers usi...

Method of ammonia annealing of ultra-thin silicon dioxide layers fo...

Method for uniform nitridization of ultra-thin silicon dioxide laye...

Multi-thickness oxide growth with in-situ scanned laser heating

Integrated dielectric and method

NITRIDATION FOR SPLIT GATE MULTIPLE VOLTAGE DEVICES

Process to produce ultrathin crystalline silicon nitride on Si (111...

Controllable oxidation technique for high quality ultra-thin gate o...