Claims
- 1. A method of fabricating an electronic device over a semiconductor substrate which includes a dielectric layer formed between a first structure and a second structure, said method comprising the steps of:growing an oxide-containing layer on said first structure; forming a silicon-containing layer on said oxide-containing layer, wherein said silicon-containing layer is substantially pure silicon; oxidizing substantially all of said silicon-containing layer by subjecting it to an ambient comprised of oxygen and nitrogen with a substrate temperature around 700 to 800 C.; and forming said second structure on said oxidized silicon-containing layer.
- 2. The method of claim 1, wherein said electronic device is a transistor.
- 3. The method of claim 2, wherein said first structure is a silicon substrate and said second structure is a gate electrode.
- 4. The method of claim 3, wherein said gate electrode is comprised of a material selected from the group consisting of: doped polycrystalline silicon, tungsten, titanium nitride, ruthenium, rhodium, iridium, and any combination thereof.
- 5. The method of claim 1, wherein said electronic device is a capacitor.
- 6. The method of claim 5, wherein said first structure is a bottom electrode of said capacitor and said second structure is the top electrode of said capacitor.
- 7. The method of claim 1, wherein said step of oxidizing substantially all of said silicon-containing layer is performed by subjecting said silicon-containing layer to an ambient containing N2O with a wafer temperature around 700 to 800 C.
- 8. The method of claim 1, wherein said step of oxidizing substantially all of said silicon-containing layer is performed by subjecting said silicon-containing layer to an ambient containing NO with a wafer temperature around 700 to 800 C.
- 9. The method of claim 1, wherein nitrogen is incorporated between said oxide-containing layer and said first structure.
- 10. The method of claim 1, wherein nitrogen is incorporated between said oxide-containing layer and said oxidized silicon-containing layer.
- 11. A method of forming a gate dielectric layer formed between a semiconductor substrate and a conductive gate electrode, said method comprised of the steps of:growing an oxide-containing layer on said semiconductor substrate; forming a silicon-containing layer on said oxide-containing layer, wherein said silicon-containing layer is substantially pure silicon; oxidizing substantially all of said silicon-containing layer by subjecting it to an ambient comprised of oxygen and nitrogen with a substrate temperature around 700 to 800 C.; and forming said conductive gate electrode on said oxidized silicon-containing layer.
- 12. The method of claim 11, wherein said step of oxidizing substantially all of said silicon-containing layer is performed by subjecting said silicon-containing layer to an ambient containing N2O with a wafer temperature around 700 to 800 C.
- 13. The method of claim 11, wherein said step of oxidizing substantially all of said silicon-containing layer is performed by subjecting said silicon-containing layer to an ambient containing NO with a wafer temperature around 700 to 800 C.
- 14. The method of claim 11, wherein nitrogen is incorporated between said oxide-containing layer and said first structure.
- 15. The method of claim 11, wherein nitrogen is incorporated between said oxide-containing layer and said oxidized silicon-containing layer.
Parent Case Info
This application claims priority under 35 USC §119(e)(1) of provisional application No. 60/109,703 filed Nov. 24, 1998.
US Referenced Citations (9)
Provisional Applications (1)
|
Number |
Date |
Country |
|
60/109703 |
Nov 1998 |
US |