Tadashi Shibata

Person

Yokohama, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor devices
- Patent number 5,834,793
- Issue date Nov 10, 1998
- Kabushiki Kaisha Toshiba
- Tadashi Shibata
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 4,914,050
- Issue date Apr 3, 1990
- Kabushiki Kaisha Toshiba
- Tadashi Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device MOSFET with V-shaped drain contact
- Patent number 4,860,084
- Issue date Aug 22, 1989
- Kabushiki Kaisha Toshiba
- Tadashi Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor device utilizing self-alig...
- Patent number 4,830,971
- Issue date May 16, 1989
- Tokyo Shibaura Denki Kabushiki Kaisha
- Tadashi Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated circuit device
- Patent number 4,631,686
- Issue date Dec 23, 1986
- Kabushiki Kaisha Toshiba
- Yasuo Ikawa
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Method for manufacturing a semiconductor device utilizing self-alig...
- Patent number 4,622,735
- Issue date Nov 18, 1986
- Tokyo Shibaura Denki Kabushiki Kaisha
- Tadashi Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor memory device having trench m...
- Patent number 4,577,395
- Issue date Mar 25, 1986
- Kabushiki Kaisha Toshiba
- Tadashi Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dynamic semiconductor memory and manufacturing method thereof
- Patent number 4,543,597
- Issue date Sep 24, 1985
- Tokyo Shibaura Denki Kabushiki Kaisha
- Tadashi Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 4,528,744
- Issue date Jul 16, 1985
- Tokyo Shibaura Denki Kabushiki Kaisha
- Tadashi Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked semiconductor device with sloping sides
- Patent number 4,500,905
- Issue date Feb 19, 1985
- Tokyo Shibaura Denki Kabushiki Kaisha
- Tadashi Shibata
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of forming planar isolation regions having field inversion r...
- Patent number 4,472,874
- Issue date Sep 25, 1984
- Tokyo Shibaura Denki Kabushiki Kaisha
- Kei Kurosawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 4,407,851
- Issue date Oct 4, 1983
- Tokyo Shibaura Denki Kabushiki Kaisha
- Kei Kurosawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing MOSFET devices by ion-implantation
- Patent number 4,140,547
- Issue date Feb 20, 1979
- Tokyo Shibaura Electric Co., Ltd.
- Tadashi Shibata
- H01 - BASIC ELECTRIC ELEMENTS

Tadashi Shibata

Person

Patents Grantslast 30 patents

Semiconductor devices

Semiconductor device and manufacturing method thereof

Semiconductor device MOSFET with V-shaped drain contact

Method for manufacturing a semiconductor device utilizing self-alig...

Semiconductor integrated circuit device

Method for manufacturing a semiconductor device utilizing self-alig...

Method of manufacturing semiconductor memory device having trench m...

Dynamic semiconductor memory and manufacturing method thereof

Method of manufacturing a semiconductor device

Stacked semiconductor device with sloping sides

Method of forming planar isolation regions having field inversion r...

Method for manufacturing semiconductor device

Method for manufacturing MOSFET devices by ion-implantation