Tae Hoon Kim

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Malta, NY, US

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Patents Grantslast 30 patents

Information Patent Grant
FinFET with isolated source and drain
- Patent number 10,128,333
- Issue date Nov 13, 2018
- GLOBALFOUNDRIES Inc.
- Hoong Shing Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation integration methods and devices formed the...
- Patent number 9,385,192
- Issue date Jul 5, 2016
- GLOBALFOUNDRIES Inc.
- Hongliang Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation integration methods and devices formed the...
- Patent number 9,123,771
- Issue date Sep 1, 2015
- GLOBALFOUNDRIES Inc.
- Hongliang Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing gate height variance during semiconductor device formation
- Patent number 8,900,940
- Issue date Dec 2, 2014
- GLOBALFOUNDRIES Inc.
- Ashish K. Jha
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FINFET WITH ISOLATED SOURCE AND DRAIN
- Publication number 20170288016
- Publication date Oct 5, 2017
- GLOBALFOUNDRIES INC.
- Hoong Shing WONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING METAL SILICIDE REGIONS ON SEMICONDUCTOR DEVICES...
- Publication number 20160163551
- Publication date Jun 9, 2016
- GLOBALFOUNDRIES INC.
- Anh Duong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHALLOW TRENCH ISOLATION INTEGRATION METHODS AND DEVICES FORMED THE...
- Publication number 20150333121
- Publication date Nov 19, 2015
- GLOBALFOUNDRIES INC.
- Hongliang Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH ISOLATED SOURCE AND DRAIN
- Publication number 20150221726
- Publication date Aug 6, 2015
- Hoong Shing Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHALLOW TRENCH ISOLATION INTEGRATION METHODS AND DEVICES FORMED THE...
- Publication number 20140227858
- Publication date Aug 14, 2014
- GLOBALFOUNDRIES INC.
- Hongliang Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING GATE HEIGHT VARIANCE DURING SEMICONDUCTOR DEVICE FORMATION
- Publication number 20140193957
- Publication date Jul 10, 2014
- GLOBALFOUNDRIES INC.
- Ashish K. Jha
- H01 - BASIC ELECTRIC ELEMENTS