Tahir GHANI

Person

Portland, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Gate-all-around integrated circuit structures having depopulated ch...
- Patent number 12,369,393
- Issue date Jul 22, 2025
- Intel Corporation
- Dax M. Crum
Information Patent Grant
Fabrication of gate-all-around integrated circuit structures having...
- Patent number 12,369,392
- Issue date Jul 22, 2025
- Intel Corporation
- Leonard P. Guler
- G11 - INFORMATION STORAGE
Information Patent Grant
Integration methods to fabricate internal spacers for nanowire devices
- Patent number 12,363,967
- Issue date Jul 15, 2025
- Sony Group Corporation
- Seiyon Kim
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Integrated circuit structures with backside gate partial cut or tre...
- Patent number 12,364,001
- Issue date Jul 15, 2025
- Intel Corporation
- Leonard P. Guler
Information Patent Grant
Integrated circuit structures having metal gates with tapered plugs
- Patent number 12,364,002
- Issue date Jul 15, 2025
- Intel Corporation
- Mohammad Hasan
Information Patent Grant
Transistor structures with a metal oxide contact buffer and a metho...
- Patent number 12,349,416
- Issue date Jul 1, 2025
- Intel Corporation
- Gilbert Dewey
Information Patent Grant
Device, method and system to provide a stressed channel of a transi...
- Patent number 12,349,420
- Issue date Jul 1, 2025
- Intel Corporation
- Rishabh Mehandru
Information Patent Grant
Neighboring gate-all-around integrated circuit structures having di...
- Patent number 12,342,612
- Issue date Jun 24, 2025
- Intel Corporation
- Leonard P. Guler
Information Patent Grant
Gate-all-around integrated circuit structures having high mobility
- Patent number 12,336,278
- Issue date Jun 17, 2025
- Intel Corporation
- Roza Kotlyar
Information Patent Grant
Nanoribbon sub-fin isolation by backside Si substrate removal etch...
- Patent number 12,328,920
- Issue date Jun 10, 2025
- Intel Corporation
- William Hsu
Information Patent Grant
Cavity spacer for nanowire transistors
- Patent number 12,328,905
- Issue date Jun 10, 2025
- Intel Corporation
- William Hsu
Information Patent Grant
Vertical integration scheme and circuit elements architecture for a...
- Patent number 12,310,044
- Issue date May 20, 2025
- Intel Corporation
- Rishabh Mehandru
Information Patent Grant
Gate-all-around integrated circuit structures having uniform thresh...
- Patent number 12,310,060
- Issue date May 20, 2025
- Intel Corporation
- Dan S. Lavric
Information Patent Grant
Non-planar integrated circuit structures having mitigated source or...
- Patent number 12,302,632
- Issue date May 13, 2025
- Intel Corporation
- Jun Sung Kang
Information Patent Grant
Fabrication of gate-all-around integrated circuit structures having...
- Patent number 12,295,170
- Issue date May 6, 2025
- Intel Corporation
- Dan S. Lavric
Information Patent Grant
Semiconductor device having doped epitaxial region and its methods...
- Patent number 12,294,027
- Issue date May 6, 2025
- Intel Corporation
- Anand S. Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having insulator subs...
- Patent number 12,294,006
- Issue date May 6, 2025
- Intel Corporation
- Chung-Hsun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having devices with s...
- Patent number 12,288,789
- Issue date Apr 29, 2025
- Intel Corporation
- Biswajeet Guha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with isolation below source and drain
- Patent number 12,288,803
- Issue date Apr 29, 2025
- Intel Corporation
- Willy Rachmady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Amorphization and regrowth of source-drain regions from the bottom-...
- Patent number 12,288,807
- Issue date Apr 29, 2025
- Intel Corporation
- Aaron Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate contact structure over active gate and method to fabricate same
- Patent number 12,278,144
- Issue date Apr 15, 2025
- Intel Corporation
- Abhijit Jayant Pethe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having adjacent struc...
- Patent number 12,272,737
- Issue date Apr 8, 2025
- Intel Corporation
- Biswajeet Guha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structures having dielectric anchor void
- Patent number 12,266,708
- Issue date Apr 1, 2025
- Intel Corporation
- Leonard P. Guler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned contacts
- Patent number 12,266,571
- Issue date Apr 1, 2025
- Intel Corporation
- Mark T. Bohr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structures having germanium-based channels
- Patent number 12,255,234
- Issue date Mar 18, 2025
- Intel Corporation
- Siddharth Chouksey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forksheet transistors with dielectric or conductive spine
- Patent number 12,243,875
- Issue date Mar 4, 2025
- Intel Corporation
- Seung Hoon Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two transistor memory cell using stacked thin-film transistors
- Patent number 12,238,913
- Issue date Feb 25, 2025
- Intel Corporation
- Abhishek A. Sharma
- G11 - INFORMATION STORAGE
Information Patent Grant
Fin smoothing and integrated circuit structures resulting therefrom
- Patent number 12,237,420
- Issue date Feb 25, 2025
- Intel Corporation
- Cory Bomberger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structures having partitioned source or drain co...
- Patent number 12,230,717
- Issue date Feb 18, 2025
- Intel Corporation
- Mauro J. Kobrinsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having asymmetric sou...
- Patent number 12,230,721
- Issue date Feb 18, 2025
- Intel Corporation
- Biswajeet Guha
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SELF-ALIGNED CONTACTS
- Publication number 20250239486
- Publication date Jul 24, 2025
- Intel Corporation
- Mark T. BOHR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CONTACT STRUCTURE OVER ACTIVE GATE AND METHOD TO FABRICATE SAME
- Publication number 20250233020
- Publication date Jul 17, 2025
- Intel Corporation
- Abhijit Jayant PETHE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING INSULATOR SUBS...
- Publication number 20250234646
- Publication date Jul 17, 2025
- Intel Corporation
- Chung-Hsun LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES HAVING DIELECTRIC GATE WALL AND DIELE...
- Publication number 20250227988
- Publication date Jul 10, 2025
- Intel Corporation
- Mohit K. HARAN
Information Patent Application
FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING...
- Publication number 20250227992
- Publication date Jul 10, 2025
- Intel Corporation
- Dan S. LAVRIC
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES WITH BACKSIDE GATE PARTIAL CUT OR TRE...
- Publication number 20250227991
- Publication date Jul 10, 2025
- Intel Corporation
- Leonard P. GULER
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES WITH BACKSIDE SELF-ALIGNED PENETRATIN...
- Publication number 20250227978
- Publication date Jul 10, 2025
- Intel Corporation
- Leonard P. GULER
Information Patent Application
FORKSHEET TRANSISTORS WITH DIELECTRIC OR CONDUCTIVE SPINE
- Publication number 20250185363
- Publication date Jun 5, 2025
- Intel Corporation
- Seung Hoon SUNG
Information Patent Application
FIN TRIM PLUG STRUCTURES HAVING AN OXIDATION CATALYST LAYER SURROUN...
- Publication number 20250176225
- Publication date May 29, 2025
- Intel Corporation
- Leonard GULER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACK-SIDE NANORIBBON REMOVAL
- Publication number 20250176255
- Publication date May 29, 2025
- Intel Corporation
- Chiao-Ti Huang
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES HAVING PARTITIONED SOURCE OR DRAIN CO...
- Publication number 20250159927
- Publication date May 15, 2025
- Intel Corporation
- Mauro J. KOBRINSKY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES WITH ANGLED TRANSISTORS
- Publication number 20250159953
- Publication date May 15, 2025
- Intel Corporation
- Tahir Ghani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING ASYMMETRIC SOU...
- Publication number 20250151338
- Publication date May 8, 2025
- Intel Corporation
- Biswajeet GUHA
Information Patent Application
FIN SMOOTHING AND INTEGRATED CIRCUIT STRUCTURES RESULTING THEREFROM
- Publication number 20250142870
- Publication date May 1, 2025
- Intel Corporation
- Cory BOMBERGER
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES HAVING CUT METAL GATES
- Publication number 20250133821
- Publication date Apr 24, 2025
- Intel Corporation
- Tahir GHANI
Information Patent Application
SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH GATE-ALL-AROUND...
- Publication number 20250126832
- Publication date Apr 17, 2025
- Intel Corporation
- Biswajeet GUHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING OXIDE SUB-FINS
- Publication number 20250120152
- Publication date Apr 10, 2025
- Intel Corporation
- Leonard P. GULER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINS FOR METAL OXIDE SEMICONDUCTOR DEVICE STRUCTURES
- Publication number 20250113607
- Publication date Apr 3, 2025
- Intel Corporation
- Martin D. Giles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING NANOWIRES WITH...
- Publication number 20250113550
- Publication date Apr 3, 2025
- Intel Corporation
- Glenn GLASS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING REMOVED SUBSTRATE
- Publication number 20250107181
- Publication date Mar 27, 2025
- Intel Corporation
- Biswajeet GUHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED MEMORY LAYERS WITH UNIFORM ACCESS
- Publication number 20250107107
- Publication date Mar 27, 2025
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY LAYERS BONDED TO LOGIC LAYERS WITH INCLINATION
- Publication number 20250107108
- Publication date Mar 27, 2025
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED MEMROY LAYERS WITH GLOBAL BIT LINE OR GLOBAL WORD LINE
- Publication number 20250104760
- Publication date Mar 27, 2025
- Intel Corporation
- Abhishek A. Sharma
- G11 - INFORMATION STORAGE
Information Patent Application
CONNECTIONS OF BIT LINES AND WORD LINES IN STACKED MEMORY LAYERS TO...
- Publication number 20250095693
- Publication date Mar 20, 2025
- Intel Corporation
- Abhishek A. Sharma
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY LAYERS AT OPPOSING SIDES OF A COMPLEMENTARY METAL-OXIDE SEMI...
- Publication number 20250098179
- Publication date Mar 20, 2025
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING SOURCE OR DRAI...
- Publication number 20250048698
- Publication date Feb 6, 2025
- Intel Corporation
- Cory BOMBERGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT OVER ACTIVE GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT...
- Publication number 20250022939
- Publication date Jan 16, 2025
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH CONDUCTIVITY TRANSISTOR CONTACTS COMPRISING GALLIUM ENRICHED L...
- Publication number 20250006806
- Publication date Jan 2, 2025
- Intel Corporation
- Anand Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH ANTIMONY AND PHOSPHORUS DOPED EPITAXIAL SOURCE/DRA...
- Publication number 20250006790
- Publication date Jan 2, 2025
- Intel Corporation
- Anand Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES WITH REMOVED SUB-FIN
- Publication number 20250006547
- Publication date Jan 2, 2025
- Intel Corporation
- Mohammad HASAN
- H01 - BASIC ELECTRIC ELEMENTS

Tahir GHANI

Person

Patents Grantslast 30 patents

Gate-all-around integrated circuit structures having depopulated ch...

Fabrication of gate-all-around integrated circuit structures having...

Integration methods to fabricate internal spacers for nanowire devices

Integrated circuit structures with backside gate partial cut or tre...

Integrated circuit structures having metal gates with tapered plugs

Transistor structures with a metal oxide contact buffer and a metho...

Device, method and system to provide a stressed channel of a transi...

Neighboring gate-all-around integrated circuit structures having di...

Gate-all-around integrated circuit structures having high mobility

Nanoribbon sub-fin isolation by backside Si substrate removal etch...

Cavity spacer for nanowire transistors

Vertical integration scheme and circuit elements architecture for a...

Gate-all-around integrated circuit structures having uniform thresh...

Non-planar integrated circuit structures having mitigated source or...

Fabrication of gate-all-around integrated circuit structures having...

Semiconductor device having doped epitaxial region and its methods...

Gate-all-around integrated circuit structures having insulator subs...

Gate-all-around integrated circuit structures having devices with s...

Transistor with isolation below source and drain

Amorphization and regrowth of source-drain regions from the bottom-...

Gate contact structure over active gate and method to fabricate same

Gate-all-around integrated circuit structures having adjacent struc...

Integrated circuit structures having dielectric anchor void

Self-aligned contacts

Integrated circuit structures having germanium-based channels

Forksheet transistors with dielectric or conductive spine

Two transistor memory cell using stacked thin-film transistors

Fin smoothing and integrated circuit structures resulting therefrom

Integrated circuit structures having partitioned source or drain co...

Gate-all-around integrated circuit structures having asymmetric sou...

Patents Applicationslast 30 patents

SELF-ALIGNED CONTACTS

GATE CONTACT STRUCTURE OVER ACTIVE GATE AND METHOD TO FABRICATE SAME

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING INSULATOR SUBS...

INTEGRATED CIRCUIT STRUCTURES HAVING DIELECTRIC GATE WALL AND DIELE...

FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING...

INTEGRATED CIRCUIT STRUCTURES WITH BACKSIDE GATE PARTIAL CUT OR TRE...

INTEGRATED CIRCUIT STRUCTURES WITH BACKSIDE SELF-ALIGNED PENETRATIN...

FORKSHEET TRANSISTORS WITH DIELECTRIC OR CONDUCTIVE SPINE

FIN TRIM PLUG STRUCTURES HAVING AN OXIDATION CATALYST LAYER SURROUN...

BACK-SIDE NANORIBBON REMOVAL

INTEGRATED CIRCUIT STRUCTURES HAVING PARTITIONED SOURCE OR DRAIN CO...

INTEGRATED CIRCUIT DEVICES WITH ANGLED TRANSISTORS

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING ASYMMETRIC SOU...

FIN SMOOTHING AND INTEGRATED CIRCUIT STRUCTURES RESULTING THEREFROM

INTEGRATED CIRCUIT STRUCTURES HAVING CUT METAL GATES

SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH GATE-ALL-AROUND...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING OXIDE SUB-FINS

FINS FOR METAL OXIDE SEMICONDUCTOR DEVICE STRUCTURES

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING NANOWIRES WITH...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING REMOVED SUBSTRATE

STACKED MEMORY LAYERS WITH UNIFORM ACCESS

MEMORY LAYERS BONDED TO LOGIC LAYERS WITH INCLINATION

STACKED MEMROY LAYERS WITH GLOBAL BIT LINE OR GLOBAL WORD LINE

CONNECTIONS OF BIT LINES AND WORD LINES IN STACKED MEMORY LAYERS TO...

MEMORY LAYERS AT OPPOSING SIDES OF A COMPLEMENTARY METAL-OXIDE SEMI...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING SOURCE OR DRAI...

CONTACT OVER ACTIVE GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT...

HIGH CONDUCTIVITY TRANSISTOR CONTACTS COMPRISING GALLIUM ENRICHED L...

TRANSISTORS WITH ANTIMONY AND PHOSPHORUS DOPED EPITAXIAL SOURCE/DRA...

INTEGRATED CIRCUIT STRUCTURES WITH REMOVED SUB-FIN