Takashi Eshita

Person

Inagi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Ferroelectric memory device and its drive method
- Patent number 6,191,441
- Issue date Feb 20, 2001
- Fujitsu Limited
- Masaki Aoki
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device having a heteroepitaxial substrate
- Patent number 6,188,090
- Issue date Feb 13, 2001
- Fujitsu Limited
- Shinji Miyagaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device with two ferroelectric capacitors per one cell
- Patent number 6,046,929
- Issue date Apr 4, 2000
- Fujitsu Limited
- Masaki Aoki
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of making a device having a heteroepitaxial substrate
- Patent number 5,834,362
- Issue date Nov 10, 1998
- Fujitsu Limited
- Shinji Miyagaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a region doped to a level exceeding the...
- Patent number 5,518,937
- Issue date May 21, 1996
- Fujitsu Limited
- Yuji Furumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of growing a compound semiconductor film
- Patent number 5,402,748
- Issue date Apr 4, 1995
- Fujitsu Limited
- Kazuaki Takai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing a semiconductor device having a region dope...
- Patent number 5,270,224
- Issue date Dec 14, 1993
- Fujitsu Limited
- Yuji Furumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a group III-V epitaxial semiconductor l...
- Patent number 5,144,379
- Issue date Sep 1, 1992
- Fujitsu Limited
- Takashi Eshita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a region doped to a level exceeding the...
- Patent number 5,111,266
- Issue date May 5, 1992
- Fujitsu Limited
- Yuji Furumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide barrier between silicon substrate and metal layer
- Patent number 5,103,285
- Issue date Apr 7, 1992
- Fujitsu Limited
- Yuji Furumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating an X-ray exposure mask
- Patent number 5,082,695
- Issue date Jan 21, 1992
- 501 Fujitsu Limited
- Masao Yamada
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Semiconductor device having a heteroepitaxial substrate
- Patent number 5,057,880
- Issue date Oct 15, 1991
- Fujitsu Limited
- Takashi Eshita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having an epitaxial layer grown heteroepitaxia...
- Patent number 5,019,874
- Issue date May 28, 1991
- Fujitsu Limited
- Toshikazu Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a semiconductor film which is electrically i...
- Patent number 4,997,787
- Issue date Mar 5, 1991
- Fujitsu Limited
- Takashi Eshita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device having a silicon car...
- Patent number 4,994,413
- Issue date Feb 19, 1991
- Fujitsu Limited
- Takashi Eshita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a heteroepitaxial semiconductor thin film using a...
- Patent number 4,876,219
- Issue date Oct 24, 1989
- Fujitsu Limited
- Takashi Eshita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of growing a single crystalline .beta.-SiC layer on a silico...
- Patent number 4,855,254
- Issue date Aug 8, 1989
- Fujitsu Limited
- Takashi Eshita
- C30 - CRYSTAL GROWTH

Takashi Eshita

Person

Patents Grantslast 30 patents

Ferroelectric memory device and its drive method

Semiconductor device having a heteroepitaxial substrate

Memory device with two ferroelectric capacitors per one cell

Method of making a device having a heteroepitaxial substrate

Semiconductor device having a region doped to a level exceeding the...

Method of growing a compound semiconductor film

Method of manufacturing a semiconductor device having a region dope...

Semiconductor device having a group III-V epitaxial semiconductor l...

Semiconductor device having a region doped to a level exceeding the...

Silicon carbide barrier between silicon substrate and metal layer

Method of fabricating an X-ray exposure mask

Semiconductor device having a heteroepitaxial substrate

Semiconductor device having an epitaxial layer grown heteroepitaxia...

Method for fabricating a semiconductor film which is electrically i...

Method of manufacturing a semiconductor device having a silicon car...

Method of forming a heteroepitaxial semiconductor thin film using a...

Method of growing a single crystalline .beta.-SiC layer on a silico...