Takashi Ohtsuka

Person

Toyama, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Fuel cell in which proton conductive gel is used and manufacturing...
- Patent number 7,964,319
- Issue date Jun 21, 2011
- Panasonic Corporation
- Takashi Ohtsuka
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 7,834,419
- Issue date Nov 16, 2010
- Panasonic Corporation
- Takashi Ohtsuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory and method for manufacturing the same
- Patent number 7,763,922
- Issue date Jul 27, 2010
- Panasonic Corporation
- Hideyuki Arai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory and the fabrication method
- Patent number 7,394,090
- Issue date Jul 1, 2008
- Matsushita Electric Industrial Co., Ltd.
- Kiyoyuki Morita
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory
- Patent number 7,291,857
- Issue date Nov 6, 2007
- Matsushita Electric Industrial Co., Ltd.
- Hideyuki Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory and the fabrication method
- Patent number 7,232,703
- Issue date Jun 19, 2007
- Matsushita Electric Industrial Co., Ltd.
- Kiyoyuki Morita
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile flip flop
- Patent number 7,206,217
- Issue date Apr 17, 2007
- Matsushita Electric Industrial Co., Ltd.
- Takashi Ohtsuka
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device
- Patent number 7,135,736
- Issue date Nov 14, 2006
- Matsushita Electric Industrial Co., Ltd.
- Takashi Nishikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory and fabrication method thereof
- Patent number 7,023,014
- Issue date Apr 4, 2006
- Matsushita Electric Industrial Co., Ltd.
- Kiyoshi Morimoto
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 7,022,530
- Issue date Apr 4, 2006
- Matsushita Electric Industrial Co., Ltd.
- Kiyoyuki Morita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile flip-flop circuit and method of driving the same
- Patent number 7,002,388
- Issue date Feb 21, 2006
- Matsushita Electric Co., Ltd.
- Takashi Nishikawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory cell and a method of controlling the same
- Patent number 6,990,006
- Issue date Jan 24, 2006
- Matsushita Electric Industrial Co., Ltd.
- Takashi Ohtsuka
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric element and a ferroelectric gate device using the same
- Patent number 6,980,043
- Issue date Dec 27, 2005
- Matsushita Electric Industrial Co., Ltd.
- Kenji Toyoda
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device
- Patent number 6,949,780
- Issue date Sep 27, 2005
- Matsushita Electric Industrial Co., Ltd.
- Michihito Ueda
- G11 - INFORMATION STORAGE
Information Patent Grant
Multilevel semiconductor memory device and method for driving the s...
- Patent number 6,940,740
- Issue date Sep 6, 2005
- Matsushita Electric Industrial Co., Ltd.
- Michihito Ueda
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of driving a non-volatile flip-flop circuit using variable r...
- Patent number 6,862,226
- Issue date Mar 1, 2005
- Matsushita Electric Industrial Co., Ltd.
- Kenji Toyoda
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric element and a ferroelectric gate device using the same
- Patent number 6,859,088
- Issue date Feb 22, 2005
- Matsushita Electric Industrial Co., Ltd.
- Kenji Toyoda
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and method for driving the same
- Patent number 6,859,381
- Issue date Feb 22, 2005
- Matsushita Electric Industrial Co., Ltd.
- Takashi Ohtsuka
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device
- Patent number 6,847,071
- Issue date Jan 25, 2005
- Matsushita Electric Industrial Co., Ltd.
- Michihito Ueda
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and learning method thereof
- Patent number 6,844,582
- Issue date Jan 18, 2005
- Matsushita Electric Industrial Co., Ltd.
- Michihito Ueda
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Non-volatile memory
- Patent number 6,844,564
- Issue date Jan 18, 2005
- Matsushita Electric Industrial Co., Ltd.
- Hideyuki Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile latch circuit and a driving method thereof
- Patent number 6,845,032
- Issue date Jan 18, 2005
- Matsushita Electric Industrial Co., Ltd.
- Kenji Toyoda
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile selector, and integrated circuit device
- Patent number 6,781,865
- Issue date Aug 24, 2004
- Matsushita Electric Industrial Co., Ltd.
- Takashi Ohtsuka
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and method for driving the same
- Patent number 6,720,596
- Issue date Apr 13, 2004
- Matsushita Electric Industrial Co., Ltd.
- Takashi Ohtsuka
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for removing foreign matter, method for forming film, semico...
- Patent number 6,716,663
- Issue date Apr 6, 2004
- Matsushita Electric Industrial Co., Ltd.
- Kiyoyuki Morita
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for removing foreign matter, method for forming film, semico...
- Patent number 6,713,316
- Issue date Mar 30, 2004
- Matsushita Electric Industrial Co., Ltd.
- Kiyoyuki Morita
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming film for semiconductor device with supercritical...
- Patent number 6,541,278
- Issue date Apr 1, 2003
- Matsushita Electric Industrial Co., Ltd.
- Kiyoyuki Morita
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor memory device and method for fabricating the same
- Patent number 6,285,051
- Issue date Sep 4, 2001
- Matsushita Electric Industrial Co., Ltd.
- Michihito Ueda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device and method for fabricating the same
- Patent number 6,238,966
- Issue date May 29, 2001
- Matsushita Electric Industrial Co., Ltd.
- Michihito Ueda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming film and method for fabricating semiconductor de...
- Patent number 6,191,054
- Issue date Feb 20, 2001
- Matsushita Electric Industrial Co., Ltd.
- Takashi Ohtsuka
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
NEGATIVE-ELECTRODE ACTIVE MATERIAL FOR NONAQUEOUS ELECTROLYTE SECON...
- Publication number 20110183208
- Publication date Jul 28, 2011
- PANASONIC CORPORATION
- Takashi OHTSUKA
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
FUEL CELL IN WHICH PROTON CONDUCTIVE GEL IS USED AND MANUFACTURING...
- Publication number 20100310960
- Publication date Dec 9, 2010
- PANASONIC CORPORATION
- Takashi OHTSUKA
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
ELECTRODE FOR ELECTROCHEMICAL ELEMENT AND ELECTROCHEMICAL ELEMENT U...
- Publication number 20080248388
- Publication date Oct 9, 2008
- Takashi Ohtsuka
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
MANUFACTURING METHOD OF ELECTRODE FOR ELECTROCHEMICAL ELEMENT
- Publication number 20080248189
- Publication date Oct 9, 2008
- Takashi Ohtsuka
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Non-volatile memory and the fabrication method
- Publication number 20070210362
- Publication date Sep 13, 2007
- Matsushita Electric Industrial Co., Ltd.
- Kiyoyuki Morita
- G11 - INFORMATION STORAGE
Information Patent Application
Negative-electrode active material for nonaqueous electrolyte secon...
- Publication number 20070207381
- Publication date Sep 6, 2007
- Takashi Ohtsuka
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20070131997
- Publication date Jun 14, 2007
- Takashi Ohtsuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20070066012
- Publication date Mar 22, 2007
- Takashi Ohtsuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor memory and method for manufacturing the same
- Publication number 20060086960
- Publication date Apr 27, 2006
- MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- Hideyuki Arai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20060076600
- Publication date Apr 13, 2006
- MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- Takashi Nakabayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nonvolatile flip-flop circuit and method of driving the same
- Publication number 20050206421
- Publication date Sep 22, 2005
- Matsushita Electric Industrial Co., Ltd.
- Takashi Nishikawa
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Ferroelectric element and a ferroelectric gate device using the same
- Publication number 20050146917
- Publication date Jul 7, 2005
- Matsushita Electric Industrial Co., Ltd.
- Kenji Toyoda
- G11 - INFORMATION STORAGE
Information Patent Application
Non-volatile memory and the fabrication method
- Publication number 20050093043
- Publication date May 5, 2005
- Matsushita Electric Industrial Co., Ltd.
- Kiyoyuki Morita
- G11 - INFORMATION STORAGE
Information Patent Application
Non-volatile memory
- Publication number 20050045864
- Publication date Mar 3, 2005
- Matsushita Electric Industrial Co., Ltd.
- Hideyuki Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF DRIVING A NON-VOLATILE FLIP-FLOP CIRCUIT USING VARIABLE R...
- Publication number 20040257113
- Publication date Dec 23, 2004
- Matsushita Electric Industrial Co., Ltd.
- Kenji Toyoda
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Semiconductor device
- Publication number 20040211994
- Publication date Oct 28, 2004
- Matsushita Electric Industrial Co., Ltd.
- Michihito Ueda
- G11 - INFORMATION STORAGE
Information Patent Application
Non-volatile memory cell and a method of controlling the same
- Publication number 20040196689
- Publication date Oct 7, 2004
- MATSUSHITA ELECTRIC INDUSTRIAL CO.
- Takashi Ohtsuka
- G11 - INFORMATION STORAGE
Information Patent Application
Non-volatile latch circuit and a driving method thereof
- Publication number 20040164778
- Publication date Aug 26, 2004
- MATSUSHITA ELECTRIC INDUSTRIAL CO, Ltd.
- Kenji Toyoda
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Semiconductor device and method for driving the same
- Publication number 20040165430
- Publication date Aug 26, 2004
- Matsushita Electric Industrial Co., Ltd.
- Takashi Ohtsuka
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20040142579
- Publication date Jul 22, 2004
- Kiyoyuki Morita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-volatile flip flop
- Publication number 20040141363
- Publication date Jul 22, 2004
- Matsushita Electric Industrial Co., Ltd.
- Takashi Ohtsuka
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Non-volatile memory and fabrication method thereof
- Publication number 20040109351
- Publication date Jun 10, 2004
- Matsushita Electric Industial Co,. Ltd.
- Kiyoshi Morimoto
- G11 - INFORMATION STORAGE
Information Patent Application
Ferroelectric element and a ferroelectric gate device using the same
- Publication number 20040109367
- Publication date Jun 10, 2004
- Matsushita Electric Incustrial Co., Ltd.
- Kenji Toyoda
- G11 - INFORMATION STORAGE
Information Patent Application
Nonvolatile selector, and integrated circuit device
- Publication number 20040095181
- Publication date May 20, 2004
- Takashi Ohtsuka
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Semiconductor device and learning method thereof
- Publication number 20040084727
- Publication date May 6, 2004
- Michihito Ueda
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Semiconductor device and a fabrication method thereof
- Publication number 20040036111
- Publication date Feb 26, 2004
- Matsushita Electric Industrial Co., Ltd.
- Takashi Nishikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-volatile memory
- Publication number 20040001374
- Publication date Jan 1, 2004
- Matsushita Electric Industrial Co., Ltd.
- Hideyuki Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for driving the same
- Publication number 20030198077
- Publication date Oct 23, 2003
- Matsushita Electric Industrial Co., Ltd.
- Michihito Ueda
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor device and method for driving the same
- Publication number 20030142533
- Publication date Jul 31, 2003
- Matsushita Electric Industrial Co., Ltd.
- Michihito Ueda
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor device and method for driving the same
- Publication number 20030094640
- Publication date May 22, 2003
- Matsushit Electric Industrial Co., Ltd.
- Takashi Ohtsuka
- G11 - INFORMATION STORAGE

Takashi Ohtsuka

Person

Patents Grantslast 30 patents

Fuel cell in which proton conductive gel is used and manufacturing...

Semiconductor device and method for fabricating the same

Semiconductor memory and method for manufacturing the same

Non-volatile memory and the fabrication method

Non-volatile memory

Non-volatile memory and the fabrication method

Non-volatile flip flop

Semiconductor device

Non-volatile memory and fabrication method thereof

Semiconductor device and method for fabricating the same

Nonvolatile flip-flop circuit and method of driving the same

Non-volatile memory cell and a method of controlling the same

Ferroelectric element and a ferroelectric gate device using the same

Semiconductor device

Multilevel semiconductor memory device and method for driving the s...

Method of driving a non-volatile flip-flop circuit using variable r...

Ferroelectric element and a ferroelectric gate device using the same

Semiconductor device and method for driving the same

Semiconductor device

Semiconductor device and learning method thereof

Non-volatile memory

Non-volatile latch circuit and a driving method thereof

Nonvolatile selector, and integrated circuit device

Semiconductor device and method for driving the same

Method for removing foreign matter, method for forming film, semico...

Method for removing foreign matter, method for forming film, semico...

Method of forming film for semiconductor device with supercritical...

Semiconductor memory device and method for fabricating the same

Semiconductor memory device and method for fabricating the same

Method for forming film and method for fabricating semiconductor de...

Patents Applicationslast 30 patents

NEGATIVE-ELECTRODE ACTIVE MATERIAL FOR NONAQUEOUS ELECTROLYTE SECON...

FUEL CELL IN WHICH PROTON CONDUCTIVE GEL IS USED AND MANUFACTURING...

ELECTRODE FOR ELECTROCHEMICAL ELEMENT AND ELECTROCHEMICAL ELEMENT U...

MANUFACTURING METHOD OF ELECTRODE FOR ELECTROCHEMICAL ELEMENT

Non-volatile memory and the fabrication method

Negative-electrode active material for nonaqueous electrolyte secon...

Semiconductor device and method for fabricating the same

Semiconductor device and method for fabricating the same

Semiconductor memory and method for manufacturing the same

Semiconductor device and method for fabricating the same

Nonvolatile flip-flop circuit and method of driving the same

Ferroelectric element and a ferroelectric gate device using the same

Non-volatile memory and the fabrication method

Non-volatile memory

METHOD OF DRIVING A NON-VOLATILE FLIP-FLOP CIRCUIT USING VARIABLE R...

Semiconductor device

Non-volatile memory cell and a method of controlling the same

Non-volatile latch circuit and a driving method thereof

Semiconductor device and method for driving the same

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

Non-volatile flip flop

Non-volatile memory and fabrication method thereof

Ferroelectric element and a ferroelectric gate device using the same

Nonvolatile selector, and integrated circuit device

Semiconductor device and learning method thereof

Semiconductor device and a fabrication method thereof

Non-volatile memory

Semiconductor device and method for driving the same

Semiconductor device and method for driving the same

Semiconductor device and method for driving the same