Takashi Yoshitomi

Person

Kamakura-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
MOSFET with a thin gate insulating film
- Patent number 7,282,752
- Issue date Oct 16, 2007
- Kabushiki Kaisha Toshiba
- Hisayo Momose
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MIM capacitor having flat diffusion prevention films
- Patent number 7,045,415
- Issue date May 16, 2006
- Kabushiki Kaisha Toshiba
- Takashi Yoshitomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having capacitor and method of manufacturing t...
- Patent number 6,998,663
- Issue date Feb 14, 2006
- Kabushiki Kaisha Toshiba
- Takashi Yoshitomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET with a thin gate insulating film
- Patent number 6,929,990
- Issue date Aug 16, 2005
- Kabushiki Kaisha Toshiba
- Hisayo Momose
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MIM capacitor having flat diffusion prevention films
- Patent number 6,894,331
- Issue date May 17, 2005
- Kabushiki Kaisha Toshiba
- Takashi Yoshitomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MIM capacitor with diffusion barrier
- Patent number 6,864,137
- Issue date Mar 8, 2005
- Kabushiki Kaisha Toshiba
- Takashi Yoshitomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having capacitor and method of manufacturing t...
- Patent number 6,746,929
- Issue date Jun 8, 2004
- Kabushiki Kaisha Toshiba
- Takashi Yoshitomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having capacitors provided with protective ins...
- Patent number 6,740,974
- Issue date May 25, 2004
- Kabushiki Kaisha Toshiba
- Takashi Yoshitomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET with a thin gate insulating film
- Patent number 6,642,560
- Issue date Nov 4, 2003
- Kabushiki Kaisha Toshiba
- Hisayo Momose
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with capacitor and process for manufacturing t...
- Patent number 6,617,666
- Issue date Sep 9, 2003
- Kabushiki Kaisha Toshiba
- Takashi Yoshitomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET with a thin gate insulating film
- Patent number 6,410,952
- Issue date Jun 25, 2002
- Kabushiki Kaisha Toshiba
- Hisayo Momose
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET with a thin gate insulating film
- Patent number 6,229,164
- Issue date May 8, 2001
- Kabushiki Kaisha Toshiba
- Hisayo Momose
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having MIS transistors and capacitor
- Patent number 6,075,266
- Issue date Jun 13, 2000
- Kabushiki Kaisha Toshiba
- Takashi Yoshitomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET with a thin gate insulating film
- Patent number 5,990,516
- Issue date Nov 23, 1999
- Kabushiki Kaisha Toshiba
- Hisayo Momose
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 5,955,761
- Issue date Sep 21, 1999
- Kabushiki Kaisha Toshiba
- Takashi Yoshitomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET with solid phase diffusion source
- Patent number 5,903,027
- Issue date May 11, 1999
- Kabushiki Kaisha Toshiba
- Takashi Yoshitomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having solid phase diffusion sources
- Patent number 5,898,203
- Issue date Apr 27, 1999
- Kabushiki Kaisha Toshiba
- Takashi Yoshitomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with side wall conductor film
- Patent number 5,780,901
- Issue date Jul 14, 1998
- Kabushiki Kaisha Toshiba
- Takashi Yoshitomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 5,766,965
- Issue date Jun 16, 1998
- Takashi Yoshitomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a CMOSFET of a single-gate
- Patent number 5,736,767
- Issue date Apr 7, 1998
- Kabushiki Kaisha Toshiba
- Takashi Yoshitomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET with solid phase diffusion source
- Patent number 5,698,881
- Issue date Dec 16, 1997
- Kabushiki Kaisha Toshiba
- Takashi Yoshitomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 5,434,440
- Issue date Jul 18, 1995
- Kabushiki Kaisha Toshiba
- Takashi Yoshitomi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MOSFET WITH A THIN GATE INSULATING FILM
- Publication number 20080048250
- Publication date Feb 28, 2008
- Kabushiki Kaisha Toshiba
- Hisayo Momose
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET with a thin gate insulating film
- Publication number 20050224898
- Publication date Oct 13, 2005
- Kabushiki Kaisha Toshiba
- Hisayo Momose
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIM capacitor having flat diffusion prevention films
- Publication number 20050001255
- Publication date Jan 6, 2005
- Takashi Yoshitomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having capacitors and method of manufacturing...
- Publication number 20040188747
- Publication date Sep 30, 2004
- TAKASHI YOSHITOMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having capacitor and method of manufacturing t...
- Publication number 20040155273
- Publication date Aug 12, 2004
- Takashi Yoshitomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET with a thin gate insulating film
- Publication number 20040070024
- Publication date Apr 15, 2004
- Kabushiki Kaisha Toshiba
- Hisayo Momose
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device with capacitor and process for manufacturing t...
- Publication number 20040014331
- Publication date Jan 22, 2004
- Kabushiki Kaisha Toshiba
- Takashi Yoshitomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having capacitor and method of manufacturing t...
- Publication number 20030042521
- Publication date Mar 6, 2003
- Kabushiki Kaisha Toshiba
- Takashi Yoshitomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having capacitors and method of manufacturing...
- Publication number 20020197815
- Publication date Dec 26, 2002
- TAKASHI YOSHITOMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Mosfet with a thin gate insulating film
- Publication number 20020145157
- Publication date Oct 10, 2002
- Kabushiki Kaisha Toshiba
- Hisayo Momose
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device with capacitor and process for manufacturing t...
- Publication number 20020127792
- Publication date Sep 12, 2002
- Takashi Yoshitomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING AN INDUCTOR AND METHOD FOR MANUFACTURIN...
- Publication number 20010045616
- Publication date Nov 29, 2001
- TAKASHI YOSHITOMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Mosfet with a thin gate insulating film
- Publication number 20010042873
- Publication date Nov 22, 2001
- Hisayo Momose
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having capacitor and method of manufacturing t...
- Publication number 20010026003
- Publication date Oct 4, 2001
- Takashi Yoshitomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIM capacitor
- Publication number 20010020713
- Publication date Sep 13, 2001
- Takashi Yoshitomi
- H01 - BASIC ELECTRIC ELEMENTS

Takashi Yoshitomi

Person

Patents Grantslast 30 patents

MOSFET with a thin gate insulating film

MIM capacitor having flat diffusion prevention films

Semiconductor device having capacitor and method of manufacturing t...

MOSFET with a thin gate insulating film

MIM capacitor having flat diffusion prevention films

MIM capacitor with diffusion barrier

Semiconductor device having capacitor and method of manufacturing t...

Semiconductor device having capacitors provided with protective ins...

MOSFET with a thin gate insulating film

Semiconductor device with capacitor and process for manufacturing t...

MOSFET with a thin gate insulating film

MOSFET with a thin gate insulating film

Semiconductor device having MIS transistors and capacitor

MOSFET with a thin gate insulating film

Semiconductor device and manufacturing method thereof

MOSFET with solid phase diffusion source

Semiconductor device having solid phase diffusion sources

Semiconductor device with side wall conductor film

Semiconductor device and method of manufacturing the same

Semiconductor device including a CMOSFET of a single-gate

MOSFET with solid phase diffusion source

Semiconductor device and method of manufacturing the same

Patents Applicationslast 30 patents

MOSFET WITH A THIN GATE INSULATING FILM

MOSFET with a thin gate insulating film

MIM capacitor having flat diffusion prevention films

Semiconductor device having capacitors and method of manufacturing...

Semiconductor device having capacitor and method of manufacturing t...

MOSFET with a thin gate insulating film

Semiconductor device with capacitor and process for manufacturing t...

Semiconductor device having capacitor and method of manufacturing t...

Semiconductor device having capacitors and method of manufacturing...

Mosfet with a thin gate insulating film

Semiconductor device with capacitor and process for manufacturing t...

SEMICONDUCTOR DEVICE HAVING AN INDUCTOR AND METHOD FOR MANUFACTURIN...

Mosfet with a thin gate insulating film

Semiconductor device having capacitor and method of manufacturing t...

MIM capacitor