Takayoshi Higuchi

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Yokohama, JP

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device with composite surface insulator
- Patent number 5,160,988
- Issue date Nov 3, 1992
- Kabushiki Kaisha Toshiba
- Takayoshi Higuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 5,106,780
- Issue date Apr 21, 1992
- Kabushiki Kaisha Toshiba
- Takayoshi Higuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Miniaturization of a contact hole in a semiconductor device
- Patent number 5,014,109
- Issue date May 7, 1991
- Kabushiki Kaisha Toshiba
- Takayoshi Higuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing a field oxide region for a semiconductor device
- Patent number 4,570,325
- Issue date Feb 18, 1986
- Kabushiki Kaisha Toshiba
- Takayoshi Higuchi
- H01 - BASIC ELECTRIC ELEMENTS