Teruyoshi Mihara

Person

Yokosuka-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Insulated gate tunnel-injection device having heterojunction and me...
- Patent number 7,217,950
- Issue date May 15, 2007
- Nissan Motor Co., Ltd.
- Saichirou Kaneko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High reverse voltage silicon carbide diode and method of manufactur...
- Patent number 7,183,575
- Issue date Feb 27, 2007
- Nissan Motor Co., Ltd.
- Yoshio Shimoida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Groove-type semiconductor device
- Patent number 5,682,048
- Issue date Oct 28, 1997
- Nissan Motor Co., Ltd.
- Toshiro Shinohara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Motor driving circuit with surge detection/protection and its struc...
- Patent number 5,675,169
- Issue date Oct 7, 1997
- Nissan Motor Co., Ltd.
- Masakatsu Hoshi
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Lateral double-diffused mosfet
- Patent number 5,635,742
- Issue date Jun 3, 1997
- Nissan Motor Co., Ltd.
- Masakatsu Hoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Target position detecting apparatus and method utilizing radar
- Patent number 5,629,704
- Issue date May 13, 1997
- Nissan Motor Co., Ltd.
- Kraisorn Throngnumchai
- G01 - MEASURING TESTING
Information Patent Grant
Method of manufacturing semiconductor device utilizing an accumulat...
- Patent number RE35405
- Issue date Dec 17, 1996
- Nissan Motor Co., Ltd.
- Yoshinori Murakami
- 437 -
Information Patent Grant
MOSFET circuit with separate and common electrodes
- Patent number 5,406,104
- Issue date Apr 11, 1995
- Nissan Motor Co., Ltd.
- Masaki Hirota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming PN junction isolation regions by forming buried...
- Patent number 5,212,109
- Issue date May 18, 1993
- Nissan Motor Co., Ltd.
- Teruyoshi Mihara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral DMOS FET device with reduced on resistance
- Patent number 5,192,989
- Issue date Mar 9, 1993
- Nissan Motor Co., Ltd.
- Tsutomu Matsushita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with high surge endurance
- Patent number 5,184,204
- Issue date Feb 2, 1993
- Nissan Motor Co., Ltd.
- Teruyoshi Mihara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device utilizing an accumulat...
- Patent number 5,132,238
- Issue date Jul 21, 1992
- Nissan Motor Co., Ltd.
- Yoshinori Murakami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky tunnel transistor device
- Patent number 5,049,953
- Issue date Sep 17, 1991
- Nissan Motor Co., Ltd.
- Teruyoshi Mihara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 5,040,034
- Issue date Aug 13, 1991
- Nissan Motor Co., Ltd.
- Yoshinori Murakami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET including current mirror FET therein
- Patent number 5,027,251
- Issue date Jun 25, 1991
- Nissan Motor Co., Ltd.
- Masaki Hirota
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Vertical power MOS transistor
- Patent number 4,972,240
- Issue date Nov 20, 1990
- Nissan Motor Company, Limited
- Koichi Murakami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conductivity modulated MOSFET
- Patent number 4,972,239
- Issue date Nov 20, 1990
- Nissan Motor Company Limited
- Teruyoshi Mihara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Input protector device for semiconductor device
- Patent number 4,937,639
- Issue date Jun 26, 1990
- Nissan Motor Company, Limited
- Kenji Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical MOSFET having voltage regulator diode at shallower subsurf...
- Patent number 4,931,846
- Issue date Jun 5, 1990
- Nissan Motor Company, Limited
- Teruyoshi Mihara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 4,928,159
- Issue date May 22, 1990
- Nissan Motor Co., Ltd.
- Teruyoshi Mihara
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
CMOS device having Schottky diode for latch-up prevention
- Patent number 4,922,317
- Issue date May 1, 1990
- Nissan Motor Company, Limited
- Teruyoshi Mihara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS having buried layer for carrier recombination
- Patent number 4,920,396
- Issue date Apr 24, 1990
- Nissan Motor Company, Limited
- Toshiro Shinohara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET device
- Patent number 4,893,158
- Issue date Jan 9, 1990
- Nissan Motor Co., Ltd.
- Teruyoshi Mihara
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Integrated circuit device having vertical MOS provided with Zener d...
- Patent number 4,862,233
- Issue date Aug 29, 1989
- Nissan Motor Company Limited
- Tsutomu Matsushita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Accelerometer
- Patent number 4,836,025
- Issue date Jun 6, 1989
- Nissan Motor Co., Ltd.
- Teruyoshi Mihara
- G01 - MEASURING TESTING
Information Patent Grant
Vertical MOSFET having Schottky diode for latch-up prevention
- Patent number 4,823,172
- Issue date Apr 18, 1989
- Nissan Motor Company, Ltd.
- Teruyoshi Mihara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having MOSFET and deep polycrystalline silicon...
- Patent number 4,805,008
- Issue date Feb 14, 1989
- Nissan Motor Co., Ltd.
- Kenji Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical MOSFET having a proof structure against puncture due to br...
- Patent number 4,803,532
- Issue date Feb 7, 1989
- Nissan Motor Co., Ltd.
- Teruyoshi Mihara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including gate protection circuit with capacit...
- Patent number 4,777,518
- Issue date Oct 11, 1988
- Nissan Motor Company, Limited
- Teruyoshi Mihara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power MOS FET with decreased resistance in the conducting state
- Patent number 4,697,201
- Issue date Sep 29, 1987
- Nissan Motor Company, Limited
- Teruyoshi Mihara
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Photoconductive Ignition System
- Publication number 20080098973
- Publication date May 1, 2008
- NISSAN MOTOR CO., LTD.
- Yusuke Niwa
- F02 - COMBUSTION ENGINES HOT-GAS OR COMBUSTION-PRODUCT ENGINE PLANTS
Information Patent Application
Insulated gate tunnel-injection device having heterojunction and me...
- Publication number 20040079989
- Publication date Apr 29, 2004
- NISSAN MOTOR CO., LTD.
- Saichirou Kaneko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High reverse voltage silicon carbide diode and method of manufactur...
- Publication number 20040031971
- Publication date Feb 19, 2004
- Yoshio Shimoida
- H01 - BASIC ELECTRIC ELEMENTS

Teruyoshi Mihara

Person

Patents Grantslast 30 patents

Insulated gate tunnel-injection device having heterojunction and me...

High reverse voltage silicon carbide diode and method of manufactur...

Groove-type semiconductor device

Motor driving circuit with surge detection/protection and its struc...

Lateral double-diffused mosfet

Target position detecting apparatus and method utilizing radar

Method of manufacturing semiconductor device utilizing an accumulat...

MOSFET circuit with separate and common electrodes

Method for forming PN junction isolation regions by forming buried...

Lateral DMOS FET device with reduced on resistance

Semiconductor device with high surge endurance

Method of manufacturing semiconductor device utilizing an accumulat...

Schottky tunnel transistor device

Semiconductor device

MOSFET including current mirror FET therein

Vertical power MOS transistor

Conductivity modulated MOSFET

Input protector device for semiconductor device

Vertical MOSFET having voltage regulator diode at shallower subsurf...

Semiconductor device

CMOS device having Schottky diode for latch-up prevention

CMOS having buried layer for carrier recombination

MOSFET device

Integrated circuit device having vertical MOS provided with Zener d...

Accelerometer

Vertical MOSFET having Schottky diode for latch-up prevention

Semiconductor device having MOSFET and deep polycrystalline silicon...

Vertical MOSFET having a proof structure against puncture due to br...

Semiconductor device including gate protection circuit with capacit...

Power MOS FET with decreased resistance in the conducting state

Patents Applicationslast 30 patents

Photoconductive Ignition System

Insulated gate tunnel-injection device having heterojunction and me...

High reverse voltage silicon carbide diode and method of manufactur...