Teruyuki Shimura

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
High frequency amplifier
- Patent number 7,907,009
- Issue date Mar 15, 2011
- Mitsubishi Electric Corporation
- Kazutomi Mori
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Power amplifier
- Patent number 7,605,648
- Issue date Oct 20, 2009
- Mitsubishi Electric Corporation
- Kazuya Yamamoto
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Output overvoltage protection circuit for power amplifier
- Patent number 7,145,397
- Issue date Dec 5, 2006
- Mitsubishi Denki Kabushiki Kaisha
- Kazuya Yamamoto
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
High-frequency semiconductor device
- Patent number 6,861,906
- Issue date Mar 1, 2005
- Mitsubishi Denki Kabushiki Kaisha
- Kazutomi Mori
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
High frequency module having a laminate board with a plurality of d...
- Patent number 6,683,512
- Issue date Jan 27, 2004
- Kyocera Corporation
- Katsurou Nakamata
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Heterojunction bipolar transistor and method for producing the same
- Patent number 6,271,098
- Issue date Aug 7, 2001
- Mitsubishi Denki Kabushiki Kaisha
- Shinichi Miyakuni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor with ballast resistor
- Patent number 6,081,003
- Issue date Jun 27, 2000
- Mitsubishi Denki Kabushiki Kaisha
- Shinichi Miyakuni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bias circuit for bipolar transistor
- Patent number 5,973,543
- Issue date Oct 26, 1999
- Mitsubishi Denki Kabushiki Kaisha
- Teruyuki Shimura
- G05 - CONTROLLING REGULATING
Information Patent Grant
Microwave power amplifier
- Patent number 5,889,434
- Issue date Mar 30, 1999
- Mitsubishi Denki Kabushiki Kaisha
- Teruyuki Shimura
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor device including plated heat sink and airbridge for h...
- Patent number 5,864,169
- Issue date Jan 26, 1999
- Mitsubishi Denki Kabushiki Kaisha
- Teruyuki Shimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid transistor structure with widened leads for reduced thermal...
- Patent number 5,793,067
- Issue date Aug 11, 1998
- Mitsubishi Denki Kabushiki Kaisha
- Takeshi Miura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor circuit element having base ballasting resistor
- Patent number 5,760,457
- Issue date Jun 2, 1998
- Mitsubishi Denki Kabushiki Kaisha
- Shigeru Mitsui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor bipolar transistor
- Patent number 5,726,468
- Issue date Mar 10, 1998
- Mitsubishi Denki Kabushiki Kaisha
- Tomoki Oku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power bipolar transistor device
- Patent number 5,719,530
- Issue date Feb 17, 1998
- Mitsubishi Denki Kabushiki Kaisha
- Teruyuki Shimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor
- Patent number 5,698,871
- Issue date Dec 16, 1997
- Mitsubishi Denki Kabushiki Kaisha
- Masayuki Sakai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor
- Patent number 5,414,273
- Issue date May 9, 1995
- Mitsubishi Denki Kabushiki Kaisha
- Teruyuki Shimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a semiconductor device
- Patent number 5,369,044
- Issue date Nov 29, 1994
- Mitsubishi Denki Kabushiki Kaisha
- Teruyuki Shimura
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Optoelectronic integrated circuit
- Patent number 5,357,121
- Issue date Oct 18, 1994
- Mitsubishi Denki Kabushiki Kaisha
- Miyo Miyashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with upper and lower gate electrode structure
- Patent number 5,270,556
- Issue date Dec 14, 1993
- Mitsubishi Denki Kabushiki Kaisha
- Teruyuki Shimura
- B82 - NANO-TECHNOLOGY
Information Patent Grant
MESFET semiconductor device having a T-shaped gate electrode
- Patent number 5,237,192
- Issue date Aug 17, 1993
- Mitsubishi Denki Kabushiki Kaisha
- Teruyuki Shimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a field effect transistor
- Patent number 5,231,040
- Issue date Jul 27, 1993
- Mitsubishi Denki Kabushiki Kaisha
- Teruyuki Shimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a heterojunction bipolar transistor
- Patent number 5,212,103
- Issue date May 18, 1993
- Mitsubishi Denki Kabushiki Kaisha
- Teruyuki Shimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making field effect transistor
- Patent number 5,192,700
- Issue date Mar 9, 1993
- Mitsubishi Denki Kabushiki Kaisha
- Teruyuki Shimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Frequency divider having the power supply connected to the GaAs sub...
- Patent number 5,163,169
- Issue date Nov 10, 1992
- Mitsubishi Denki Kabushiki Kaisha
- Kousei Maemura
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Field effect transistor and method for making same
- Patent number 5,101,245
- Issue date Mar 31, 1992
- Mitsubishi Denki Kabushiki Kaisha
- Teruyuki Shimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor
- Patent number 5,073,812
- Issue date Dec 17, 1991
- Mitubishi Denki Kabushiki Kaisha
- Teruyuki Shimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a bipolar transistor with spacers
- Patent number 5,063,167
- Issue date Nov 5, 1991
- Mitsubishi Denki Kabushiki Kaisha
- Teruyuki Shimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a MESFET
- Patent number 4,977,100
- Issue date Dec 11, 1990
- Mitsubishi Denki Kabushiki Kaisha
- Teruyuki Shimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 4,967,254
- Issue date Oct 30, 1990
- Mitsubishi Denki Kabushiki Kaisha
- Teruyuki Shimura
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HIGH-FREQUENCY AMPLIFIER MODULE AND HIGH-FREQUENCY AMPLIFIER MODULE...
- Publication number 20140232467
- Publication date Aug 21, 2014
- MITSUBISHI ELECTRIC CORPORATION
- Kenji Mukai
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
HIGH FREQUENCY AMPLIFIER
- Publication number 20100033241
- Publication date Feb 11, 2010
- MITSUBISHI ELECTRIC CORPORATION
- Kazutomi Mori
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
POWER AMPLIFIER
- Publication number 20090027130
- Publication date Jan 29, 2009
- Mitsubishi Electric Corporation
- Kazuya Yamamoto
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Output overvoltage protection circuit for power amplifier
- Publication number 20050030106
- Publication date Feb 10, 2005
- Mitsubishi Denki Kabushiki Kaisha
- Kazuya Yamamoto
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Power amplifier capable of switching gain while suppressing noise p...
- Publication number 20030218500
- Publication date Nov 27, 2003
- Mitsubishi Denki Kabushiki Kaisha
- Kazuya Yamamoto
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
High-frequency semiconductor device
- Publication number 20030011435
- Publication date Jan 16, 2003
- Kazutomi Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High frequency module
- Publication number 20020196085
- Publication date Dec 26, 2002
- KYOCERA CORPORATION
- Katsurou Nakamata
- H01 - BASIC ELECTRIC ELEMENTS

Teruyuki Shimura

Person

Patents Grantslast 30 patents

High frequency amplifier

Power amplifier

Output overvoltage protection circuit for power amplifier

High-frequency semiconductor device

High frequency module having a laminate board with a plurality of d...

Heterojunction bipolar transistor and method for producing the same

Heterojunction bipolar transistor with ballast resistor

Bias circuit for bipolar transistor

Microwave power amplifier

Semiconductor device including plated heat sink and airbridge for h...

Hybrid transistor structure with widened leads for reduced thermal...

Bipolar transistor circuit element having base ballasting resistor

Compound semiconductor bipolar transistor

High power bipolar transistor device

Heterojunction bipolar transistor

Heterojunction bipolar transistor

Method for producing a semiconductor device

Optoelectronic integrated circuit

Semiconductor device with upper and lower gate electrode structure

MESFET semiconductor device having a T-shaped gate electrode

Method of making a field effect transistor

Method of making a heterojunction bipolar transistor

Method of making field effect transistor

Frequency divider having the power supply connected to the GaAs sub...

Field effect transistor and method for making same

Heterojunction bipolar transistor

Method of producing a bipolar transistor with spacers

Method of fabricating a MESFET

Semiconductor device

Patents Applicationslast 30 patents

HIGH-FREQUENCY AMPLIFIER MODULE AND HIGH-FREQUENCY AMPLIFIER MODULE...

HIGH FREQUENCY AMPLIFIER

POWER AMPLIFIER

Output overvoltage protection circuit for power amplifier

Power amplifier capable of switching gain while suppressing noise p...

High-frequency semiconductor device

High frequency module