Tetsuya Homma

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method of recycling useful metal
- Patent number 8,317,896
- Issue date Nov 27, 2012
- Shibaura Institute of Technology
- Tetsuya Homma
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Grant
Fabrication method of semiconductor device
- Patent number 6,054,383
- Issue date Apr 25, 2000
- NEC Corporation
- Mieko Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having an organic resin layer and silicon oxid...
- Patent number 5,939,771
- Issue date Aug 17, 1999
- NEC Corporation
- Tatsuya Usami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin on glass material and method for forming a semiconductor devic...
- Patent number 5,891,234
- Issue date Apr 6, 1999
- NEC Corporation
- Kenichi Koyanagi
- C03 - GLASS MINERAL OR SLAG WOOL
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 5,840,631
- Issue date Nov 24, 1998
- NEC Corporation
- Akira Kubo
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for forming multilevel interconnections in a semiconductor d...
- Patent number 5,776,829
- Issue date Jul 7, 1998
- NEC Corporation
- Tetsuya Homma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a semiconductor device having multilevel int...
- Patent number 5,744,378
- Issue date Apr 28, 1998
- NEC Corporation
- Tetsuya Homma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating multilevel interconnections in a semiconducto...
- Patent number 5,607,880
- Issue date Mar 4, 1997
- NEC Corporation
- Mieko Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a silicon oxide film containing fluorin...
- Patent number 5,521,424
- Issue date May 28, 1996
- NEC Corporation
- Kazuyoshi Ueno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication process for multilevel interconnections in a semiconduc...
- Patent number 5,506,177
- Issue date Apr 9, 1996
- NEC Corporation
- Koji Kishimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing semiconductor integrated circuit device having...
- Patent number 5,491,108
- Issue date Feb 13, 1996
- NEC Corporation
- Mieko Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device using the abrasive
- Patent number 5,468,682
- Issue date Nov 21, 1995
- NEC Corporation
- Tetsuya Homma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a semiconductor device having a multilayer wi...
- Patent number 5,444,023
- Issue date Aug 22, 1995
- NEC Corporation
- Tetsuya Homma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming multi-layered interconnections with fluorine compound treat...
- Patent number 5,420,075
- Issue date May 30, 1995
- NEC Corporation
- Tetsuya Homma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 5,407,529
- Issue date Apr 18, 1995
- NEC Corporation
- Tetsuya Homma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming interconnect structure, insulating films and sur...
- Patent number 5,405,805
- Issue date Apr 11, 1995
- NEC Corporation
- Tetsuya Homma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing semiconductor devices
- Patent number 5,399,529
- Issue date Mar 21, 1995
- NEC Corporation
- Tetsuya Homma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a semiconductor device having a multi-layere...
- Patent number 5,334,552
- Issue date Aug 2, 1994
- NEC Corporation
- Tetsuya Homma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Chemical vapor deposition method for forming fluorine containing si...
- Patent number 5,288,518
- Issue date Feb 22, 1994
- NEC Corproation
- Tetsuya Homma
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming silicon oxide film containing fluorine
- Patent number 5,215,787
- Issue date Jun 1, 1993
- NEC Corporation
- Tetsuya Homma
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF RECYCLING USEFUL METAL
- Publication number 20110017020
- Publication date Jan 27, 2011
- SHIBAURA INSTITUTE OF TECHNOLOGY
- Tetsuya Homma
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR

Tetsuya Homma

Person

Patents Grantslast 30 patents

Method of recycling useful metal

Fabrication method of semiconductor device

Semiconductor device having an organic resin layer and silicon oxid...

Spin on glass material and method for forming a semiconductor devic...

Method of manufacturing semiconductor device

Method for forming multilevel interconnections in a semiconductor d...

Method for fabricating a semiconductor device having multilevel int...

Method of fabricating multilevel interconnections in a semiconducto...

Semiconductor device having a silicon oxide film containing fluorin...

Fabrication process for multilevel interconnections in a semiconduc...

Method of producing semiconductor integrated circuit device having...

Method of manufacturing semiconductor device using the abrasive

Method of fabricating a semiconductor device having a multilayer wi...

Forming multi-layered interconnections with fluorine compound treat...

Method for manufacturing semiconductor device

Method for forming interconnect structure, insulating films and sur...

Process for producing semiconductor devices

Method for fabricating a semiconductor device having a multi-layere...

Chemical vapor deposition method for forming fluorine containing si...

Method of forming silicon oxide film containing fluorine

Patents Applicationslast 30 patents

METHOD OF RECYCLING USEFUL METAL