Tetsuya Takeuchi

Person

Sunnyval, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Light emitting diodes with graded composition active regions
- Patent number 7,345,324
- Issue date Mar 18, 2008
- Philips Lumileds Lighting Company LLC
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a long wavelength indium gallium arsenide nitride...
- Patent number 7,033,938
- Issue date Apr 25, 2006
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting diodes with graded composition active regions
- Patent number 6,955,933
- Issue date Oct 18, 2005
- LumiLeds Lighting U.S., LLC
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for fabricating efficient semiconductor lasers vi...
- Patent number 6,934,312
- Issue date Aug 23, 2005
- Agilent Technologies, Inc.
- Tetsuya Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for increasing nitrogen incorporation into a semi...
- Patent number 6,887,727
- Issue date May 3, 2005
- Agilent Technologies, Inc.
- Tetsuya Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-V semiconductor devices including semiconductor materials...
- Patent number 6,878,959
- Issue date Apr 12, 2005
- Agilent Technologies, Inc.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting device having element(s) for increasing the effectiv...
- Patent number 6,878,970
- Issue date Apr 12, 2005
- Agilent Technologies, Inc.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Efficiency GaN-based light emitting devices
- Patent number 6,853,663
- Issue date Feb 8, 2005
- Agilent Technologies, Inc.
- Ghulam Hasnain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device with reduced polarization fields
- Patent number 6,849,472
- Issue date Feb 1, 2005
- LumiLeds Lighting U.S., LLC
- Michael R. Krames
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Nitride semiconductor layer structure and a nitride semiconductor l...
- Patent number 6,829,273
- Issue date Dec 7, 2004
- Agilent Technologies, Inc.
- Hiroshi Amano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric InGaAsN vertical cavity surface emitting lasers
- Patent number 6,813,295
- Issue date Nov 2, 2004
- Agilent Technologies, Inc.
- Tetsuya Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for obtaining high quality InGaAsN semiconductor devices
- Patent number 6,764,926
- Issue date Jul 20, 2004
- Agilent Technologies, Inc.
- Tetsuya Takeuchi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for producing a long wavelength indium gallium arsenide nitr...
- Patent number 6,756,325
- Issue date Jun 29, 2004
- Agilent Technologies, Inc.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nucleation layer for improved light extraction from light emitting...
- Patent number 6,683,327
- Issue date Jan 27, 2004
- LumiLeds Lighting U.S., LLC
- Michael R. Krames
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial aluminium-gallium nitride semiconductor substrate
- Patent number 6,534,791
- Issue date Mar 18, 2003
- LumiLeds Lighting U.S., LLC
- Nobuaki Hayashi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Light emitting diodes with graded composition active regions
- Publication number 20050263780
- Publication date Dec 1, 2005
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of making a long wavelength indium gallium arsenide nitride...
- Publication number 20040219703
- Publication date Nov 4, 2004
- David P. Bour
- C30 - CRYSTAL GROWTH
Information Patent Application
NITRIDE SEMICONDUCTOR LAYER STRUCTURE AND A NITRIDE SEMICONDUCTOR L...
- Publication number 20040213309
- Publication date Oct 28, 2004
- Hiroshi Amano
- B82 - NANO-TECHNOLOGY
Information Patent Application
Light-emitting device having element(s) for increasing the effectiv...
- Publication number 20040206949
- Publication date Oct 21, 2004
- David P. Bour
- B82 - NANO-TECHNOLOGY
Information Patent Application
Method and apparatus for improving wavelength stability for InGaAsN...
- Publication number 20040161006
- Publication date Aug 19, 2004
- Ying-Lan Chang
- B82 - NANO-TECHNOLOGY
Information Patent Application
System and method for increasing nitrogen incorporation into a semi...
- Publication number 20040147052
- Publication date Jul 29, 2004
- Tetsuya Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III-V semiconductor devices including semiconductor materials...
- Publication number 20040099856
- Publication date May 27, 2004
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
System and method for fabricating efficient semiconductor lasers vi...
- Publication number 20040062283
- Publication date Apr 1, 2004
- Tetsuya Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for producing a long wavelength indium gallium arsenide nitr...
- Publication number 20030211647
- Publication date Nov 13, 2003
- David P. Bour
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for obtaining high quality InGaAsN semiconductor devices
- Publication number 20030181024
- Publication date Sep 25, 2003
- Tetsuya Takeuchi
- C30 - CRYSTAL GROWTH
Information Patent Application
Asymmetric InGaAsN vertical cavity surface emitting lasers
- Publication number 20030179801
- Publication date Sep 25, 2003
- Tetsuya Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nucleation layer for improved light extraction from light emitting...
- Publication number 20030089917
- Publication date May 15, 2003
- Michael R. Krames
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Light emitting diodes with graded composition active regions
- Publication number 20030020085
- Publication date Jan 30, 2003
- LumiLeds Lighting, U.S., LLC
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Efficiency GaN-based light emitting devices
- Publication number 20020110172
- Publication date Aug 15, 2002
- Ghulam Hasnain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitride semiconductor layer structure and a nitride semiconductor l...
- Publication number 20020094002
- Publication date Jul 18, 2002
- Hiroshi Amano
- B82 - NANO-TECHNOLOGY
Information Patent Application
Nitride semiconductor device with reduced polarization fields
- Publication number 20020084467
- Publication date Jul 4, 2002
- Michael R. Krames
- B82 - NANO-TECHNOLOGY

Tetsuya Takeuchi

Person

Patents Grantslast 30 patents

Light emitting diodes with graded composition active regions

Method of making a long wavelength indium gallium arsenide nitride...

Light emitting diodes with graded composition active regions

System and method for fabricating efficient semiconductor lasers vi...

System and method for increasing nitrogen incorporation into a semi...

Group III-V semiconductor devices including semiconductor materials...

Light-emitting device having element(s) for increasing the effectiv...

Efficiency GaN-based light emitting devices

Nitride semiconductor device with reduced polarization fields

Nitride semiconductor layer structure and a nitride semiconductor l...

Asymmetric InGaAsN vertical cavity surface emitting lasers

Method for obtaining high quality InGaAsN semiconductor devices

Method for producing a long wavelength indium gallium arsenide nitr...

Nucleation layer for improved light extraction from light emitting...

Epitaxial aluminium-gallium nitride semiconductor substrate

Patents Applicationslast 30 patents

Light emitting diodes with graded composition active regions

Method of making a long wavelength indium gallium arsenide nitride...

NITRIDE SEMICONDUCTOR LAYER STRUCTURE AND A NITRIDE SEMICONDUCTOR L...

Light-emitting device having element(s) for increasing the effectiv...

Method and apparatus for improving wavelength stability for InGaAsN...

System and method for increasing nitrogen incorporation into a semi...

Group III-V semiconductor devices including semiconductor materials...

System and method for fabricating efficient semiconductor lasers vi...

Method for producing a long wavelength indium gallium arsenide nitr...

Method for obtaining high quality InGaAsN semiconductor devices

Asymmetric InGaAsN vertical cavity surface emitting lasers

Nucleation layer for improved light extraction from light emitting...

Light emitting diodes with graded composition active regions

Efficiency GaN-based light emitting devices

Nitride semiconductor layer structure and a nitride semiconductor l...

Nitride semiconductor device with reduced polarization fields