Claims
- 1. A method for fabricating a light-emitting semiconductor device including a III-Nitride quantum well layer, said method comprising:
selecting a facet orientation of said III-Nitride quantum well layer to control a field strength of a piezoelectric field therein; and growing said III-Nitride quantum well layer with said selected facet orientation.
- 2. The method of claim 1, further comprising selecting said facet orientation to reduce a magnitude of an electric field strength in said quantum well layer.
- 3. The method of claim 1, further comprising growing said quantum well layer with a wurtzite crystal structure with said selected facet orientation tilted at least 1° from the {0001} direction of said wurtzite crystal structure.
- 4. The method of claim 1, further comprising growing said quantum well layer with a wurtzite crystal structure with said selected facet orientation tilted at least 10° from the {0001} direction of said wurtzite crystal structure.
- 5. The method of claim 1, further comprising growing said quantum well layer with a wurtzite crystal structure with said selected facet orientation tilted from the {0001} direction of said wurtzite crystal structure at an angle selected from about 30° to about 50°, about 80° to about 100°, and about 130° to about 150°.
- 6. The method of claim 1, further comprising growing said quantum well layer with a zincblende crystal structure with said selected facet orientation tilted at least 1° from the {111} direction of said zincblende crystal structure.
- 7. The method of claim 1, further comprising growing a nucleation layer directly on a substrate surface, and growing said quantum well layer above said nucleation layer.
- 8. The method of claim 7, further comprising selecting said substrate surface to have a lattice mismatch of less than about 10% with a material from which said nucleation layer is formed.
- 9. The method of claim 7, further comprising growing said nucleation layer by metal-organic chemical vapor deposition at a temperature such that a crystal structure of said nucleation layer substantially replicates a crystal structure of said substrate surface.
- 10. The method of claim 7, further comprising selecting a material from which said substrate is formed from the group consisting of SiC, AlN, and GaN.
- 11. The method of claim 7, wherein said nucleation layer comprises a III-Nitride material.
- 12. The method of claim 1, further comprising:
growing a first semiconductor layer above a substrate, said first semiconductor layer being grown with a first facet orientation different from said selected facet orientation; altering an exposed surface of said first semiconductor layer to provide a surface having said selected facet orientation; and growing said quantum well layer above said surface having said selected facet orientation.
- 13. The method of claim 12, wherein altering said exposed surface comprises selectively etching said first semiconductor layer.
- 14. The method of claim 12, further comprising growing a second semiconductor layer above said quantum well layer, said second semiconductor layer being grown with a facet orientation about equal to said first facet orientation.
- 15. A light-emitting semiconductor device comprising:
a III-Nitride quantum well layer having a wurtzite crystal structure and a facet orientation tilted from the {0001} direction of said wurtzite crystal structure at an angle selected from about 30° to about 50° and about 130° to about 150°.
- 16. The light-emitting semiconductor device of claim 15 further comprising:
a substrate; and a nucleation layer formed directly on a surface of said substrate; wherein said quantum well layer is formed overlying said nucleation layer, and said nucleation layer has a crystal structure that substantially replicates a crystal structure of said surface of said substrate.
- 17. The light-emitting semiconductor device of claim 16, wherein said surface of said substrate has a lattice mismatch of less than about 10% with a material from which said nucleation layer is formed.
- 18. The light-emitting semiconductor device of claim 16, wherein said substrate comprises a material selected from the group consisting of SiC, AlN, and GaN.
- 19. The light-emitting semiconductor device of claim 16, further comprising at least one layer having a facet orientation in about the {0001} direction.
- 20. A method for fabricating a light-emitting semiconductor device including a III-Nitride quantum well layer, said method comprising:
selecting a facet orientation of said III-Nitride quantum well layer to control a field strength of a spontaneous electric field therein; and growing said III-Nitride quantum well layer with said selected facet orientation.
- 21. The method of claim 20, further comprising selecting said facet orientation to reduce a magnitude of an electric field strength in said quantum well layer.
- 22. A method for fabricating a light-emitting semiconductor device including a III-Nitride quantum well layer, said method comprising:
selecting a facet orientation of said III-Nitride quantum well layer to reduce a magnitude of a combined field strength of a piezoelectric field and a spontaneous electric field therein; and growing said III-Nitride quantum well layer with said selected facet orientation.
- 23. The method of claim 22 further comprising growing said quantum well layer with a wurtzite crystal structure with said selected facet orientation tilted from the =0001} direction of said wurtzite crystal structure at an angle selected from about 80° to about 100°.
Priority Claims (1)
Number |
Date |
Country |
Kind |
09/265-311 |
Sep 1997 |
JP |
|
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] This is a continuation in part of U.S. patent application Ser. No. 09/717,647 filed on Nov. 21, 2000, which is a divisional of U.S. patent application Ser. No. 09/162,708 filed Sep. 29, 1998, now U.S. Pat. No. 6,229,151. U.S. patent application Ser. No. 09/717,647 and U.S. Pat. No. 6,229,151 are incorporated herein by reference in their entirety.
Divisions (1)
|
Number |
Date |
Country |
Parent |
09162708 |
Sep 1998 |
US |
Child |
09717647 |
Nov 2000 |
US |
Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
09717647 |
Nov 2000 |
US |
Child |
09992192 |
Nov 2001 |
US |