Thekkemadathil Velayudhan Rajeevakumar

Person

Scarsdale, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Replacement-gate-compatible programmable electrical antifuse
- Patent number 9,059,006
- Issue date Jun 16, 2015
- International Business Machines Corporation
- Satya N. Chakravarti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement-gate-compatible programmable electrical antifuse
- Patent number 8,237,457
- Issue date Aug 7, 2012
- International Business Machines Corporation
- Satya N. Chakravarti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET fuse programmed by electromigration
- Patent number 7,531,886
- Issue date May 12, 2009
- International Business Machines Corporation
- Satya N. Chakravarti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Circuit technique to eliminate large on-chip decoupling capacitors
- Patent number 6,710,643
- Issue date Mar 23, 2004
- International Business Machines Corporation
- Thekkemadathil V. Rajeevakumar
- G05 - CONTROLLING REGULATING
Information Patent Grant
Dual trench capacitor
- Patent number 5,930,107
- Issue date Jul 27, 1999
- International Business Machines Corporation
- Thekkemadathil Velayudhan Rajeevakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI trench DRAM cell for 256 MB DRAM and beyond
- Patent number 5,869,868
- Issue date Feb 9, 1999
- International Business Machines Corporation
- Thekkemadathil Velayudhan Rajeevakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Supply voltage independent bandgap based reference generator circui...
- Patent number 5,811,993
- Issue date Sep 22, 1998
- International Business Machines Corporation
- Robert Heath Dennard
- G05 - CONTROLLING REGULATING
Information Patent Grant
Method for making a dual trench capacitor structure
- Patent number 5,692,281
- Issue date Dec 2, 1997
- International Business Machines Corporation
- Thekkemadathil Velayudhan Rajeevakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making DRAM cell with trench under device for 256 Mb DRAM...
- Patent number 5,658,816
- Issue date Aug 19, 1997
- International Business Machines Corporation
- Thekkemadathil Velayudhan Rajeevakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI trench DRAM cell for 256 MB DRAM and beyond
- Patent number 5,593,912
- Issue date Jan 14, 1997
- International Business Machines Corporation
- Thekkemadathil V. Rajeevakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making cross point four square folded bitline trench DRAM...
- Patent number 5,529,944
- Issue date Jun 25, 1996
- International Business Machines Corporation
- Thekkemadathil V. Rajeevakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench sidewall structure
- Patent number 5,521,114
- Issue date May 28, 1996
- International Business Machines Corporation
- Thekkemadathil Rajeevakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a high capacitance multi-level storage node for h...
- Patent number 5,489,544
- Issue date Feb 6, 1996
- International Business Machines Corporation
- Thekkemadathil V. Rajeevakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating low leakage substrate plate trench DRAM cell...
- Patent number 5,482,883
- Issue date Jan 9, 1996
- International Business Machines Corporation
- Thekkemadathil V. Rajeevakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High capacitance multi-level storage node for high density TFT load...
- Patent number 5,426,324
- Issue date Jun 20, 1995
- International Business Machines Corporation
- Thekkemadathil V. Rajeevakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating low leakage substrate plate trench DRAM cell...
- Patent number 5,406,515
- Issue date Apr 11, 1995
- International Business Machines Corporation
- Thekkemadathil V. Rajeevakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench sidewall structure
- Patent number 5,283,453
- Issue date Feb 1, 1994
- International Business Machines Corporation
- Thekkemadathil Rajeevakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High capacity DRAM trench capacitor and methods of fabricating same
- Patent number 5,065,273
- Issue date Nov 12, 1991
- International Business Machines Corporation
- Thekkemadathil V. Rajeevakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-timed precharge circuit
- Patent number 4,638,462
- Issue date Jan 20, 1987
- International Business Machines Corporation
- Thekkemadathil V. Rajeevakumar
- G11 - INFORMATION STORAGE
Information Patent Grant
High-performance, high-density CMOS decoder/driver circuit
- Patent number 4,618,784
- Issue date Oct 21, 1986
- International Business Machines Corporation
- Barbara A. Chappell
- G11 - INFORMATION STORAGE
Information Patent Grant
Superconducting soliton devices
- Patent number 4,361,768
- Issue date Nov 30, 1982
- International Business Machines Corporation
- Thekkemadathil V. Rajeevakumar
- H03 - BASIC ELECTRONIC CIRCUITRY

Patents Applicationslast 30 patents

Information Patent Application
A MOSFET FUSE PROGRAMMED BY ELECTROMIGRATION
- Publication number 20080006902
- Publication date Jan 10, 2008
- International Business Machines Corporation
- Satya N. Chakravarti
- H01 - BASIC ELECTRIC ELEMENTS

Thekkemadathil Velayudhan Rajeevakumar

Person

Patents Grantslast 30 patents

Replacement-gate-compatible programmable electrical antifuse

Replacement-gate-compatible programmable electrical antifuse

MOSFET fuse programmed by electromigration

Circuit technique to eliminate large on-chip decoupling capacitors

Dual trench capacitor

SOI trench DRAM cell for 256 MB DRAM and beyond

Supply voltage independent bandgap based reference generator circui...

Method for making a dual trench capacitor structure

Method of making DRAM cell with trench under device for 256 Mb DRAM...

SOI trench DRAM cell for 256 MB DRAM and beyond

Method of making cross point four square folded bitline trench DRAM...

Trench sidewall structure

Method for making a high capacitance multi-level storage node for h...

Method for fabricating low leakage substrate plate trench DRAM cell...

High capacitance multi-level storage node for high density TFT load...

Method for fabricating low leakage substrate plate trench DRAM cell...

Trench sidewall structure

High capacity DRAM trench capacitor and methods of fabricating same

Self-timed precharge circuit

High-performance, high-density CMOS decoder/driver circuit

Superconducting soliton devices

Patents Applicationslast 30 patents

A MOSFET FUSE PROGRAMMED BY ELECTROMIGRATION