Thomas C. Holloway

Person

Murphy, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Variable threshold voltage gate electrode for higher performance mo...
- Patent number 6,222,251
- Issue date Apr 24, 2001
- Texas Instruments Incorporated
- Thomas C. Holloway
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to reduce boron diffusion through gate oxide using sidewall...
- Patent number 6,087,268
- Issue date Jul 11, 2000
- Texas Instruments Incorporated
- Thomas C. Holloway
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory circuit and method of construction
- Patent number 6,072,715
- Issue date Jun 6, 2000
- Texas Instruments Incorporated
- Thomas C. Holloway
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of improving diffusion barrier properties of gate oxides by...
- Patent number 6,040,249
- Issue date Mar 21, 2000
- Texas Instruments Incorporated
- Thomas C. Holloway
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to reduce diode capacitance of short-channel MOSFETS
- Patent number 6,037,230
- Issue date Mar 14, 2000
- Texas Instruments Incorporated
- Thomas C. Holloway
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having dual gate and method of formation
- Patent number 5,989,962
- Issue date Nov 23, 1999
- Texas Instruments Incorporated
- Thomas C. Holloway
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
VLSI interconnect method and structure
- Patent number 5,302,539
- Issue date Apr 12, 1994
- Texas Instruments Incorporated
- Roger A. Haken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit process with TiN-gate transistor
- Patent number 4,931,411
- Issue date Jun 5, 1990
- Texas Instruments Incorporated
- Howard L. Tigelaar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single-polysilicon dram device and process
- Patent number 4,894,693
- Issue date Jan 16, 1990
- Howard L. Tigelaar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold adjustment method for an IGFET
- Patent number 4,845,047
- Issue date Jul 4, 1989
- Texas Instruments Incorporated
- Thomas C. Holloway
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
VLSI local interconnect structure
- Patent number 4,821,085
- Issue date Apr 11, 1989
- Texas Instruments Incorporated
- Roger A. Haken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device and process with tin-gate transistor
- Patent number 4,814,854
- Issue date Mar 21, 1989
- Texas Instruments Incorporated
- Howard L. Tigelaar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device and process with tin capacitors
- Patent number 4,811,078
- Issue date Mar 7, 1989
- Texas Instruments Incorporated
- Howard L. Tigelaar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device and process with doubled capacitors
- Patent number 4,811,076
- Issue date Mar 7, 1989
- Texas Instruments Incorporated
- Howard L. Tigelaar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for making integrated circuits having titanium nitride trip...
- Patent number 4,804,636
- Issue date Feb 14, 1989
- Texas Instruments Incorporated
- Robert Groover
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Local interconnect
- Patent number 4,746,219
- Issue date May 24, 1988
- Texas Instruments Incorporated
- Thomas C. Holloway
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxide-capped titanium silicide formation
- Patent number 4,690,730
- Issue date Sep 1, 1987
- Texas Instruments Incorporated
- Thomas E. Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process to increase tin thickness
- Patent number 4,676,866
- Issue date Jun 30, 1987
- Texas Instruments Incorporated
- Thomas E. Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for patterning local interconnects
- Patent number 4,657,628
- Issue date Apr 14, 1987
- Texas Instruments Incorporated
- Thomas C. Holloway
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of submicron substrate element
- Patent number 4,354,896
- Issue date Oct 19, 1982
- Texas Instruments Incorporated
- William R. Hunter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication methods for the high capacity ram cell
- Patent number 4,112,575
- Issue date Sep 12, 1978
- Texas Instruments Incorporated
- Horng-sen Fu
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
LIGHTLY DOPED DRAIN EXTENSION PROCESS TO MINIMIZE SOURCE/DRAIN RESI...
- Publication number 20010003666
- Publication date Jun 14, 2001
- THOMAS C. HOLLOWAY
- H01 - BASIC ELECTRIC ELEMENTS

Thomas C. Holloway

Person

Patents Grantslast 30 patents

Variable threshold voltage gate electrode for higher performance mo...

Method to reduce boron diffusion through gate oxide using sidewall...

Memory circuit and method of construction

Method of improving diffusion barrier properties of gate oxides by...

Method to reduce diode capacitance of short-channel MOSFETS

Semiconductor device having dual gate and method of formation

VLSI interconnect method and structure

Integrated circuit process with TiN-gate transistor

Single-polysilicon dram device and process

Threshold adjustment method for an IGFET

VLSI local interconnect structure

Integrated circuit device and process with tin-gate transistor

Integrated circuit device and process with tin capacitors

Device and process with doubled capacitors

Process for making integrated circuits having titanium nitride trip...

Local interconnect

Oxide-capped titanium silicide formation

Process to increase tin thickness

Process for patterning local interconnects

Formation of submicron substrate element

Fabrication methods for the high capacity ram cell

Patents Applicationslast 30 patents

LIGHTLY DOPED DRAIN EXTENSION PROCESS TO MINIMIZE SOURCE/DRAIN RESI...