Thomas Feudel

Person

Radebeul, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Reduced STI loss for superior surface planarity of embedded stresso...
- Patent number 8,623,742
- Issue date Jan 7, 2014
- GLOBALFOUNDRIES Inc.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating integrated circuits using non-oxidizing res...
- Patent number 8,586,440
- Issue date Nov 19, 2013
- GLOBALFOUNDRIES, INC.
- Stefan Flachowsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique for enhancing transistor performance by transistor specif...
- Patent number 8,541,885
- Issue date Sep 24, 2013
- GLOBALFOUNDRIES Inc.
- Martin Gerhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique for enhancing dopant profile and channel conductivity by...
- Patent number 8,338,885
- Issue date Dec 25, 2012
- Advanced Micro Devices, Inc.
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancing transistor characteristics by a late deep implantation in...
- Patent number 8,288,256
- Issue date Oct 16, 2012
- Advanced Micro Devices, Inc.
- Thomas Feudel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing transistor junction capacitance by recessing drain and sou...
- Patent number 8,183,605
- Issue date May 22, 2012
- Advanced Micro Devices, Inc.
- Thomas Feudel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique for enhancing dopant profile and channel conductivity by...
- Patent number 8,143,133
- Issue date Mar 27, 2012
- Advanced Micro Devices, Inc.
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique for enhancing transistor performance by transistor specif...
- Patent number 7,964,970
- Issue date Jun 21, 2011
- GLOBALFOUNDRIES, INC.
- Martin Gerhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device comprising SOI transi...
- Patent number 7,955,937
- Issue date Jun 7, 2011
- Advanced Micro Devices, Inc.
- Karsten Wieczorek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor structure comprising an implantat...
- Patent number 7,816,199
- Issue date Oct 19, 2010
- Advanced Micro Devices, Inc.
- Thomas Feudel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor having a locally provided metal silicide region in conta...
- Patent number 7,799,682
- Issue date Sep 21, 2010
- GLOBALFOUNDRIES Inc.
- Sven Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing transistor junction capacitance by recessing drain and sou...
- Patent number 7,754,556
- Issue date Jul 13, 2010
- Advanced Micro Devices, Inc.
- Thomas Feudel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique for locally adapting transistor characteristics by using...
- Patent number 7,745,334
- Issue date Jun 29, 2010
- Advanced Micro Devices, Inc.
- Patrick Press
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having improved halo structures and a method o...
- Patent number 7,625,802
- Issue date Dec 1, 2009
- Advanced Micro Devices, Inc.
- Thomas Feudel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor having a doped gate electrode with reduced...
- Patent number 7,494,872
- Issue date Feb 24, 2009
- Advanced Micro Devices, Inc.
- Karsten Wieczorek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS gate structure comprising predoped semiconductor gate material...
- Patent number 7,419,867
- Issue date Sep 2, 2008
- Advanced Micro Devices, Inc.
- Karsten Wieczorek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of depositing a layer of a material on a substrate
- Patent number 7,338,872
- Issue date Mar 4, 2008
- Advanced Micro Devices, Inc.
- Christoph Schwan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor having an asymmetric source/drain and halo implantation...
- Patent number 7,208,397
- Issue date Apr 24, 2007
- Advanced Micro Devices, Inc.
- Thomas Feudel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having improved doping profiles and method of...
- Patent number 6,924,216
- Issue date Aug 2, 2005
- Advanced Micro Devices, Inc.
- Thomas Feudel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode structure for SOI circuits
- Patent number 6,905,924
- Issue date Jun 14, 2005
- Advanced Micro Devices, Inc.
- Gert Burbach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming a transistor having a recessed gate electrode st...
- Patent number 6,897,114
- Issue date May 24, 2005
- Advanced Micro Devices, Inc.
- Christian Krueger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming drain/source extension structures of a field eff...
- Patent number 6,849,516
- Issue date Feb 1, 2005
- Advanced Micro Devices, Inc.
- Thomas Feudel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having improved doping profiles and a method o...
- Patent number 6,846,708
- Issue date Jan 25, 2005
- Advanced Micro Devices, Inc.
- Thomas Feudel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a field effect transistor and a pass...
- Patent number 6,821,840
- Issue date Nov 23, 2004
- Advanced Micro Devices, Inc.
- Karsten Wieczorek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of assessing lateral dopant and/or charge carrier profiles
- Patent number 6,822,430
- Issue date Nov 23, 2004
- Advanced Micro Devices, Inc.
- Thomas Feudel
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method of forming a metal silicide gate in a standard MOS process s...
- Patent number 6,821,887
- Issue date Nov 23, 2004
- Advanced Micro Devices, Inc.
- Karsten Wieczorek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having an improved strained surface layer and...
- Patent number 6,808,970
- Issue date Oct 26, 2004
- Advanced Micro Devices, Inc.
- Thomas Feudel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a field effect transistor
- Patent number 6,806,153
- Issue date Oct 19, 2004
- Advanced Micro Devices, Inc.
- Karsten Wieczorek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of controlling a shape of an oxide layer formed on a substrate
- Patent number 6,593,175
- Issue date Jul 15, 2003
- Advanced Micro Devices, Inc.
- Thomas Feudel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming lightly doped regions in a semiconductor device
- Patent number 6,410,410
- Issue date Jun 25, 2002
- Advanced Micro Devices, Inc.
- Thomas Feudel
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHODS FOR FABRICATING INTEGRATED CIRCUITS USING NON-OXIDIZING RES...
- Publication number 20130029464
- Publication date Jan 31, 2013
- GLOBALFOUNDRIES INC.
- Stefan Flachowsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUE FOR ENHANCING DOPANT PROFILE AND CHANNEL CONDUCTIVITY BY...
- Publication number 20120146155
- Publication date Jun 14, 2012
- Advanced Micro Devices, Inc.
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reduced STI Loss for Superior Surface Planarity of Embedded Stresso...
- Publication number 20110269293
- Publication date Nov 3, 2011
- GLOBALFOUNDRIES INC.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Technique for Enhancing Transistor Performance by Transistor Specif...
- Publication number 20110215415
- Publication date Sep 8, 2011
- GLOBALFOUNDRIES INC.
- Martin Gerhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUE FOR ENHANCING DOPANT PROFILE AND CHANNEL CONDUCTIVITY BY...
- Publication number 20110121398
- Publication date May 26, 2011
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING TRANSISTOR JUNCTION CAPACITANCE BY RECESSING DRAIN AND SOU...
- Publication number 20100237431
- Publication date Sep 23, 2010
- Advanced Micro Devices, Inc.
- Thomas Feudel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A SEMICONDUCTOR STRUCTURE COMPRISING AN IMPLANTAT...
- Publication number 20090035924
- Publication date Feb 5, 2009
- Thomas Feudel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING TRANSISTOR JUNCTION CAPACITANCE BY RECESSING DRAIN AND SOU...
- Publication number 20090001484
- Publication date Jan 1, 2009
- Thomas Feudel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A SEMICONDUCTOR STRUCTURE COMPRISING AN IMPLANTAT...
- Publication number 20080299733
- Publication date Dec 4, 2008
- Patrick Press
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCING TRANSISTOR CHARACTERISTICS BY A LATE DEEP IMPLANTATION IN...
- Publication number 20080268625
- Publication date Oct 30, 2008
- Thomas Feudel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUE FOR ENHANCING TRANSISTOR PERFORMANCE BY TRANSISTOR SPECIF...
- Publication number 20080265330
- Publication date Oct 30, 2008
- Martin Gerhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUE FOR ENHANCING DOPANT ACTIVATION BY USING MULTIPLE SEQUENT...
- Publication number 20080268597
- Publication date Oct 30, 2008
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUE FOR LOCALLY ADAPTING TRANSISTOR CHARACTERISTICS BY USING...
- Publication number 20080081471
- Publication date Apr 3, 2008
- Patrick Press
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR HAVING A LOCALLY PROVIDED METAL SILICIDE REGION IN CONTA...
- Publication number 20080054371
- Publication date Mar 6, 2008
- Sven Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF INCREASING TRANSISTOR PERFORMANCE BY DOPANT ACTIVATION AF...
- Publication number 20070281472
- Publication date Dec 6, 2007
- Patrick Press
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE COMPRISING SOI TRANSISTORS AND BULK TRANSISTOR...
- Publication number 20070228377
- Publication date Oct 4, 2007
- Karsten Wieczorek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING ULTRA-SHALLOW HIGH QUALITY JUNCTIONS BY A COMBIN...
- Publication number 20070232033
- Publication date Oct 4, 2007
- Karsten Wieczorek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS gate structure comprising predoped semiconductor gate material...
- Publication number 20060094183
- Publication date May 4, 2006
- Karsten Wieczorek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor having an asymmetric source/drain and halo implantation...
- Publication number 20060043430
- Publication date Mar 2, 2006
- Thomas Feudel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of depositing a layer of a material on a substrate
- Publication number 20050170660
- Publication date Aug 4, 2005
- Christoph Schwan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Drain/source extension structure of a field effect transistor inclu...
- Publication number 20050098818
- Publication date May 12, 2005
- Advanced Micro Devices, Inc.
- Thomas Feudel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Technique for adjusting a penetration depth during the implantation...
- Publication number 20050048679
- Publication date Mar 3, 2005
- Christian Krueger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field effect transistor having a doped gate electrode with reduced...
- Publication number 20050023611
- Publication date Feb 3, 2005
- Karsten Wieczorek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Diode structure for SOI circuits
- Publication number 20040188768
- Publication date Sep 30, 2004
- Gert Burbach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of assessing lateral dopant and/or charge carrier profiles
- Publication number 20040152222
- Publication date Aug 5, 2004
- Thomas Feudel
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Semiconductor device having improved doping profiles and a method o...
- Publication number 20040137687
- Publication date Jul 15, 2004
- Thomas Feudel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having an improved strained surface layer and...
- Publication number 20040126998
- Publication date Jul 1, 2004
- Thomas Feudel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Advanced recessed gate transistor and a method of forming the same
- Publication number 20040126965
- Publication date Jul 1, 2004
- Christian Krueger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing a field effect transistor
- Publication number 20040121565
- Publication date Jun 24, 2004
- Karsten Wieczorek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Drain/source extension structure of a field effect transistor inclu...
- Publication number 20040104442
- Publication date Jun 3, 2004
- Thomas Feudel
- H01 - BASIC ELECTRIC ELEMENTS

Thomas Feudel

Person

Patents Grantslast 30 patents

Reduced STI loss for superior surface planarity of embedded stresso...

Methods for fabricating integrated circuits using non-oxidizing res...

Technique for enhancing transistor performance by transistor specif...

Technique for enhancing dopant profile and channel conductivity by...

Enhancing transistor characteristics by a late deep implantation in...

Reducing transistor junction capacitance by recessing drain and sou...

Technique for enhancing dopant profile and channel conductivity by...

Technique for enhancing transistor performance by transistor specif...

Method for manufacturing semiconductor device comprising SOI transi...

Method of forming a semiconductor structure comprising an implantat...

Transistor having a locally provided metal silicide region in conta...

Reducing transistor junction capacitance by recessing drain and sou...

Technique for locally adapting transistor characteristics by using...

Semiconductor device having improved halo structures and a method o...

Field effect transistor having a doped gate electrode with reduced...

CMOS gate structure comprising predoped semiconductor gate material...

Method of depositing a layer of a material on a substrate

Transistor having an asymmetric source/drain and halo implantation...

Semiconductor device having improved doping profiles and method of...

Diode structure for SOI circuits

Methods of forming a transistor having a recessed gate electrode st...

Methods of forming drain/source extension structures of a field eff...

Semiconductor device having improved doping profiles and a method o...

Semiconductor device including a field effect transistor and a pass...

Method of assessing lateral dopant and/or charge carrier profiles

Method of forming a metal silicide gate in a standard MOS process s...

Semiconductor device having an improved strained surface layer and...

Method of manufacturing a field effect transistor

Method of controlling a shape of an oxide layer formed on a substrate

Method of forming lightly doped regions in a semiconductor device

Patents Applicationslast 30 patents

METHODS FOR FABRICATING INTEGRATED CIRCUITS USING NON-OXIDIZING RES...

TECHNIQUE FOR ENHANCING DOPANT PROFILE AND CHANNEL CONDUCTIVITY BY...

Reduced STI Loss for Superior Surface Planarity of Embedded Stresso...

Technique for Enhancing Transistor Performance by Transistor Specif...

TECHNIQUE FOR ENHANCING DOPANT PROFILE AND CHANNEL CONDUCTIVITY BY...

REDUCING TRANSISTOR JUNCTION CAPACITANCE BY RECESSING DRAIN AND SOU...

METHOD OF FORMING A SEMICONDUCTOR STRUCTURE COMPRISING AN IMPLANTAT...

REDUCING TRANSISTOR JUNCTION CAPACITANCE BY RECESSING DRAIN AND SOU...

METHOD OF FORMING A SEMICONDUCTOR STRUCTURE COMPRISING AN IMPLANTAT...

ENHANCING TRANSISTOR CHARACTERISTICS BY A LATE DEEP IMPLANTATION IN...

TECHNIQUE FOR ENHANCING TRANSISTOR PERFORMANCE BY TRANSISTOR SPECIF...

TECHNIQUE FOR ENHANCING DOPANT ACTIVATION BY USING MULTIPLE SEQUENT...

TECHNIQUE FOR LOCALLY ADAPTING TRANSISTOR CHARACTERISTICS BY USING...

TRANSISTOR HAVING A LOCALLY PROVIDED METAL SILICIDE REGION IN CONTA...

METHOD OF INCREASING TRANSISTOR PERFORMANCE BY DOPANT ACTIVATION AF...

SEMICONDUCTOR DEVICE COMPRISING SOI TRANSISTORS AND BULK TRANSISTOR...

METHOD FOR FORMING ULTRA-SHALLOW HIGH QUALITY JUNCTIONS BY A COMBIN...

CMOS gate structure comprising predoped semiconductor gate material...

Transistor having an asymmetric source/drain and halo implantation...

Method of depositing a layer of a material on a substrate

Drain/source extension structure of a field effect transistor inclu...

Technique for adjusting a penetration depth during the implantation...

Field effect transistor having a doped gate electrode with reduced...

Diode structure for SOI circuits

Method of assessing lateral dopant and/or charge carrier profiles

Semiconductor device having improved doping profiles and a method o...

Semiconductor device having an improved strained surface layer and...

Advanced recessed gate transistor and a method of forming the same

Method of manufacturing a field effect transistor

Drain/source extension structure of a field effect transistor inclu...