Thomas W. Dyer

Person

Pleasant Valley, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Selective local metal cap layer formation for improved electromigra...
- Patent number 9,455,186
- Issue date Sep 27, 2016
- International Business Machines Corporation
- Matthew S. Angyal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having tensile and/or compressive stress and...
- Patent number 9,431,535
- Issue date Aug 30, 2016
- GLOBALFOUNDRIES Inc.
- Thomas W. Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective local metal cap layer formation for improved electromigra...
- Patent number 9,406,560
- Issue date Aug 2, 2016
- International Business Machines Corporation
- Matthew S. Angyal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective local metal cap layer formation for improved electromigra...
- Patent number 9,385,038
- Issue date Jul 5, 2016
- International Business Machines Corporation
- Matthew S. Angyal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having tensile and/or compressive stress and...
- Patent number 9,276,111
- Issue date Mar 1, 2016
- GLOBALFOUNDRIES Inc.
- Thomas W. Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep trench MIM capacitor and moat isolation with epitaxial semicon...
- Patent number 9,171,848
- Issue date Oct 27, 2015
- GLOBALFOUNDRIES, INC.
- Thomas Walter Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Measuring metal line spacing in semiconductor devices
- Patent number 9,157,980
- Issue date Oct 13, 2015
- International Business Machines Corporation
- Thomas W. Dyer
- G01 - MEASURING TESTING
Information Patent Grant
Selective local metal cap layer formation for improved electromigra...
- Patent number 9,076,847
- Issue date Jul 7, 2015
- International Business Machines Corporation
- Matthew S. Angyal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doping of copper wiring structures in back end of line processing
- Patent number 9,059,177
- Issue date Jun 16, 2015
- International Business Machines Corporation
- Thomas W. Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device processing with reduced wiring puddle formation
- Patent number 9,018,097
- Issue date Apr 28, 2015
- International Business Machines Corporation
- Thomas W. Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having tensile and/or compressive stress and...
- Patent number 8,896,069
- Issue date Nov 25, 2014
- International Business Machines Corporation
- Thomas W Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having tensile and/or compressive stress and...
- Patent number 8,889,504
- Issue date Nov 18, 2014
- International Business Machines Corporation
- Thomas W Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS devices with stressed channel regions, and methods for fabrica...
- Patent number 8,853,746
- Issue date Oct 7, 2014
- International Business Machines Corporation
- Xiangdong Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doping of copper wiring structures in back end of line processing
- Patent number 8,765,602
- Issue date Jul 1, 2014
- International Business Machines Corporation
- Thomas W. Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a planar field effect transistor structure with r...
- Patent number 8,697,528
- Issue date Apr 15, 2014
- International Business Machines Corporation
- Thomas W. Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-on-insulator substrate with built-in substrate junction
- Patent number 8,685,806
- Issue date Apr 1, 2014
- International Business Machines Corporation
- Thomas W. Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for detecting defects in BEOL processing
- Patent number 8,623,673
- Issue date Jan 7, 2014
- International Business Machines Corporation
- Thomas W. Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-on-insulator substrate with built-in substrate junction
- Patent number 8,482,009
- Issue date Jul 9, 2013
- International Business Machines Corporation
- Thomas Walter Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planar field effect transistor structure having an angled crystallo...
- Patent number 8,377,785
- Issue date Feb 19, 2013
- International Business Machines Corporation
- Thomas W. Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of patterning semiconductor structure and structure thereof
- Patent number 8,362,531
- Issue date Jan 29, 2013
- International Business Machines Corporation
- Thomas W. Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having tensile and/or compressive stress and...
- Patent number 8,293,631
- Issue date Oct 23, 2012
- International Business Machines Corporation
- Thomas W. Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming p-channel field effect transistors having SiGe s...
- Patent number 8,198,194
- Issue date Jun 12, 2012
- Samsung Electronics Co., Ltd.
- Jong Ho Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI substrates and SOI devices, and methods for forming the same
- Patent number 8,159,031
- Issue date Apr 17, 2012
- International Business Machines Corporation
- Thomas W. Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI protection for buried plate implant and DT bottle ETCH
- Patent number 8,110,464
- Issue date Feb 7, 2012
- International Business Machines Corporation
- Thomas W. Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of manufacture thereof
- Patent number 8,063,449
- Issue date Nov 22, 2011
- Infineon Technologies AG
- Jin-Ping Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of patterning semiconductor structure and structure thereof
- Patent number 7,989,357
- Issue date Aug 2, 2011
- International Business Machines Corporation
- Thomas W. Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary field effect transistors having embedded silicon sour...
- Patent number 7,968,910
- Issue date Jun 28, 2011
- International Business Machines Corporation
- Xiangdong Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planar field effect transistor structure having an angled crystallo...
- Patent number 7,964,910
- Issue date Jun 21, 2011
- International Business Machines Corporation
- Thomas W. Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-on-insulator substrate with built-in substrate junction
- Patent number 7,955,940
- Issue date Jun 7, 2011
- International Business Machines Corporation
- Thomas Walter Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
EDRAM including metal plates
- Patent number 7,943,474
- Issue date May 17, 2011
- International Business Machines Corporation
- Thomas W. Dyer
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
REMOVAL OF INTEGRATED CIRCUIT CHIPS FROM A WAFER
- Publication number 20160260674
- Publication date Sep 8, 2016
- GLOBALFOUNDRIES INC.
- Bradley P. Jones
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THROUGH CRACK STOP VIA
- Publication number 20150325531
- Publication date Nov 12, 2015
- International Business Machines Corporation
- Thomas W. Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE LOCAL METAL CAP LAYER FORMATION FOR IMPROVED ELECTROMIGRA...
- Publication number 20150255343
- Publication date Sep 10, 2015
- International Business Machines Corporation
- Matthew S. Angyal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE LOCAL METAL CAP LAYER FORMATION FOR IMPROVED ELECTROMIGRA...
- Publication number 20150255398
- Publication date Sep 10, 2015
- International Business Machines Corporation
- Matthew S. Angyal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPING OF COPPER WIRING STRUCTURES IN BACK END OF LINE PROCESSING
- Publication number 20150255397
- Publication date Sep 10, 2015
- International Business Machines Corporation
- Thomas W. Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE LOCAL METAL CAP LAYER FORMATION FOR IMPROVED ELECTROMIGRA...
- Publication number 20150255342
- Publication date Sep 10, 2015
- International Business Machines Corporation
- Matthew S. Angyal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS DEVICES WITH STRESSED CHANNEL REGIONS, AND METHODS FOR FABRICA...
- Publication number 20150162446
- Publication date Jun 11, 2015
- International Business Machines Corporation
- Xiangdong Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for Deep Trench MIM Capacitor Moat Isolation with N+ Epitax...
- Publication number 20150145102
- Publication date May 28, 2015
- International Business Machines Corporation
- Thomas Walter Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES HAVING TENSILE AND/OR COMPRESSIVE STRESS AND...
- Publication number 20150054028
- Publication date Feb 26, 2015
- International Business Machines Corporation
- Thomas W. Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES HAVING TENSILE AND/OR COMPRESSIVE STRESS AND...
- Publication number 20150037957
- Publication date Feb 5, 2015
- Thomas W. Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPING OF COPPER WIRING STRUCTURES IN BACK END OF LINE PROCESSING
- Publication number 20140246776
- Publication date Sep 4, 2014
- International Business Machines Corporation
- Thomas W. Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE LOCAL METAL CAP LAYER FORMATION FOR IMPROVED ELECTROMIGRA...
- Publication number 20140203435
- Publication date Jul 24, 2014
- International Business Machines Corporation
- Matthew S. Angyal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEASURING METAL LINE SPACING IN SEMICONDUCTOR DEVICES
- Publication number 20140139236
- Publication date May 22, 2014
- International Business Machines Corporation
- Thomas W. Dyer
- G01 - MEASURING TESTING
Information Patent Application
SEMICONDUCTOR DEVICE PROCESSING WITH REDUCED WIRING PUDDLE FORMATION
- Publication number 20140099787
- Publication date Apr 10, 2014
- International Business Machines Corporation
- Thomas W. Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPING OF COPPER WIRING STRUCTURES IN BACK END OF LINE PROCESSING
- Publication number 20140061914
- Publication date Mar 6, 2014
- International Business Machines Corporation
- Thomas W. Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON-ON-INSULATOR SUBSTRATE WITH BUILT-IN SUBSTRATE JUNCTION
- Publication number 20130273715
- Publication date Oct 17, 2013
- Thomas W. Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLANAR FIELD EFFECT TRANSISTOR STRUCTURE AND METHOD
- Publication number 20130001660
- Publication date Jan 3, 2013
- International Business Machines Corporation
- Thomas W. Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES HAVING TENSILE AND/OR COMPRESSIVE STRESS AND...
- Publication number 20120175640
- Publication date Jul 12, 2012
- International Business Machines Corporation
- Thomas W. Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES HAVING TENSILE AND/OR COMPRESSIVE STRESS AND...
- Publication number 20120135591
- Publication date May 31, 2012
- International Business Machines Corporation
- Thomas W. Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming P-Channel Field Effect Transistors Having SiGe S...
- Publication number 20110237039
- Publication date Sep 29, 2011
- Jong-Ho Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PATTERNING SEMICONDUCTOR STRUCTURE AND STRUCTURE THEREOF
- Publication number 20110215437
- Publication date Sep 8, 2011
- International Business Machines Corporation
- Thomas W. Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON-ON-INSULATOR SUBSTRATE WITH BUILT-IN SUBSTRATE JUNCTION
- Publication number 20110193149
- Publication date Aug 11, 2011
- International Business Machines Corporation
- Thomas Walter Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLANAR FIELD EFFECT TRANSISTOR STRUCTURE AND METHOD
- Publication number 20110183481
- Publication date Jul 28, 2011
- International Business Machines Corporation
- Thomas W. Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING SELF-ALIGNED DUAL STRESS LINERS FOR CMOS SEMICO...
- Publication number 20110163387
- Publication date Jul 7, 2011
- Kyoung-Woo Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field Effect Transistors Having Gate Electrode Silicide Layers with...
- Publication number 20110156110
- Publication date Jun 30, 2011
- Jun-jung Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON-ON-INSULATOR SUBSTRATE WITH BUILT-IN SUBSTRATE JUNCTION
- Publication number 20110049594
- Publication date Mar 3, 2011
- International Business Machines Corporation
- Thomas Walter Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EDRAM INCLUDING METAL PLATES
- Publication number 20100213571
- Publication date Aug 26, 2010
- International Business Machines Corporation
- Thomas W. Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI SUBSTRATES AND SOI DEVICES, AND METHODS FOR FORMING THE SAME
- Publication number 20100148259
- Publication date Jun 17, 2010
- International Business Machines Corporation
- Thomas W. Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices and Methods of Manufacture Thereof
- Publication number 20100065922
- Publication date Mar 18, 2010
- Jin-Ping Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH PERFORMANCE CMOS DEVICES COMPRISING GAPPED DUAL STRESSORS WITH...
- Publication number 20090321847
- Publication date Dec 31, 2009
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS

Thomas W. Dyer

Person

Patents Grantslast 30 patents

Selective local metal cap layer formation for improved electromigra...

Semiconductor devices having tensile and/or compressive stress and...

Selective local metal cap layer formation for improved electromigra...

Selective local metal cap layer formation for improved electromigra...

Semiconductor devices having tensile and/or compressive stress and...

Deep trench MIM capacitor and moat isolation with epitaxial semicon...

Measuring metal line spacing in semiconductor devices

Selective local metal cap layer formation for improved electromigra...

Doping of copper wiring structures in back end of line processing

Semiconductor device processing with reduced wiring puddle formation

Semiconductor devices having tensile and/or compressive stress and...

Semiconductor devices having tensile and/or compressive stress and...

CMOS devices with stressed channel regions, and methods for fabrica...

Doping of copper wiring structures in back end of line processing

Method of forming a planar field effect transistor structure with r...

Silicon-on-insulator substrate with built-in substrate junction

Structure and method for detecting defects in BEOL processing

Silicon-on-insulator substrate with built-in substrate junction

Planar field effect transistor structure having an angled crystallo...

Method of patterning semiconductor structure and structure thereof

Semiconductor devices having tensile and/or compressive stress and...

Methods of forming p-channel field effect transistors having SiGe s...

SOI substrates and SOI devices, and methods for forming the same

SOI protection for buried plate implant and DT bottle ETCH

Semiconductor devices and methods of manufacture thereof

Method of patterning semiconductor structure and structure thereof

Complementary field effect transistors having embedded silicon sour...

Planar field effect transistor structure having an angled crystallo...

Silicon-on-insulator substrate with built-in substrate junction

EDRAM including metal plates

Patents Applicationslast 30 patents

REMOVAL OF INTEGRATED CIRCUIT CHIPS FROM A WAFER

THROUGH CRACK STOP VIA

SELECTIVE LOCAL METAL CAP LAYER FORMATION FOR IMPROVED ELECTROMIGRA...

SELECTIVE LOCAL METAL CAP LAYER FORMATION FOR IMPROVED ELECTROMIGRA...

DOPING OF COPPER WIRING STRUCTURES IN BACK END OF LINE PROCESSING

SELECTIVE LOCAL METAL CAP LAYER FORMATION FOR IMPROVED ELECTROMIGRA...

CMOS DEVICES WITH STRESSED CHANNEL REGIONS, AND METHODS FOR FABRICA...

Methods for Deep Trench MIM Capacitor Moat Isolation with N+ Epitax...

SEMICONDUCTOR DEVICES HAVING TENSILE AND/OR COMPRESSIVE STRESS AND...

SEMICONDUCTOR DEVICES HAVING TENSILE AND/OR COMPRESSIVE STRESS AND...

DOPING OF COPPER WIRING STRUCTURES IN BACK END OF LINE PROCESSING

SELECTIVE LOCAL METAL CAP LAYER FORMATION FOR IMPROVED ELECTROMIGRA...

MEASURING METAL LINE SPACING IN SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICE PROCESSING WITH REDUCED WIRING PUDDLE FORMATION

DOPING OF COPPER WIRING STRUCTURES IN BACK END OF LINE PROCESSING

SILICON-ON-INSULATOR SUBSTRATE WITH BUILT-IN SUBSTRATE JUNCTION

PLANAR FIELD EFFECT TRANSISTOR STRUCTURE AND METHOD

SEMICONDUCTOR DEVICES HAVING TENSILE AND/OR COMPRESSIVE STRESS AND...

SEMICONDUCTOR DEVICES HAVING TENSILE AND/OR COMPRESSIVE STRESS AND...

Methods of Forming P-Channel Field Effect Transistors Having SiGe S...

METHOD OF PATTERNING SEMICONDUCTOR STRUCTURE AND STRUCTURE THEREOF

SILICON-ON-INSULATOR SUBSTRATE WITH BUILT-IN SUBSTRATE JUNCTION

PLANAR FIELD EFFECT TRANSISTOR STRUCTURE AND METHOD

METHODS FOR FORMING SELF-ALIGNED DUAL STRESS LINERS FOR CMOS SEMICO...

Field Effect Transistors Having Gate Electrode Silicide Layers with...

SILICON-ON-INSULATOR SUBSTRATE WITH BUILT-IN SUBSTRATE JUNCTION

EDRAM INCLUDING METAL PLATES

SOI SUBSTRATES AND SOI DEVICES, AND METHODS FOR FORMING THE SAME

Semiconductor Devices and Methods of Manufacture Thereof

HIGH PERFORMANCE CMOS DEVICES COMPRISING GAPPED DUAL STRESSORS WITH...