Timothy D. Henson

Person

Mount Shasta, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Isolation structure for separating different transistor regions on...
- Patent number 12,199,102
- Issue date Jan 14, 2025
- Infineon Technologies Austria AG
- Ling Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench field electrode termination structure for transistor devices
- Patent number 11,217,690
- Issue date Jan 4, 2022
- Infineon Technologies Austria AG
- Ashita Mirchandani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a power semiconductor device
- Patent number 10,483,359
- Issue date Nov 19, 2019
- Infineon Technologies Americas Corp.
- Timothy D. Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench FET with ruggedness enhancement regions
- Patent number 9,991,377
- Issue date Jun 5, 2018
- Infineon Technologies Americas Corp.
- Ashita Mirchandani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a cavity
- Patent number 9,991,347
- Issue date Jun 5, 2018
- Infineon Technologies Americas Corp.
- Robert Haase
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor structure having integrated snubb...
- Patent number 9,966,464
- Issue date May 8, 2018
- Infineon Technologies Americas Corp.
- Kapil Kelkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with contiguous gate trenches and offset...
- Patent number 9,818,743
- Issue date Nov 14, 2017
- Infineon Technologies Americas Corp.
- Kapil Kelkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with embedded field electrodes
- Patent number 9,761,676
- Issue date Sep 12, 2017
- Infineon Technologies Americas Corp.
- Timothy D. Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a field plate double trench having a thic...
- Patent number 9,735,241
- Issue date Aug 15, 2017
- Infineon Technologies Americas Corp.
- Timothy D. Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a cavity and method for manufacturing t...
- Patent number 9,691,864
- Issue date Jun 27, 2017
- Infineon Technologies Americas Corp.
- Robert Haase
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a gate trench having a gate electrod...
- Patent number 9,673,318
- Issue date Jun 6, 2017
- Infineon Technologies Americas Corp.
- Ashita Mirchandani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a shallow and narrow trench FET and related...
- Patent number 9,653,597
- Issue date May 16, 2017
- Infineon Technologies Americas Corp.
- Timothy D. Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having integrated snubber resistance
- Patent number 9,627,328
- Issue date Apr 18, 2017
- Infineon Technologies Americas Corp.
- Kapil Kelkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with source trench and termination trenc...
- Patent number 9,620,583
- Issue date Apr 11, 2017
- Infineon Technologies Americas Corp.
- Kapil Kelkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical FET having reduced on-resistance
- Patent number 9,590,096
- Issue date Mar 7, 2017
- Infineon Technologies Americas Corp.
- Harsh Naik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a field plate trench having a thick botto...
- Patent number 9,299,793
- Issue date Mar 29, 2016
- Infineon Technologies Americas Corp.
- Timothy D. Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a thick bottom field plate trench having...
- Patent number 9,202,882
- Issue date Dec 1, 2015
- Infineon Technologies Americas Corp.
- Timothy D. Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with reduced on-resistance and increased...
- Patent number 9,006,824
- Issue date Apr 14, 2015
- International Rectifier Corporation
- Timothy D. Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSgated power semiconductor device with source field electrode
- Patent number 8,884,367
- Issue date Nov 11, 2014
- International Rectifier Corporation
- Dev Alok Girdhar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buck converter power package
- Patent number 8,860,194
- Issue date Oct 14, 2014
- International Rectifier Corporation
- Ling Ma
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Semiconductor device including a voltage controlled termination str...
- Patent number 8,698,232
- Issue date Apr 15, 2014
- International Rectifier Corporation
- Aram Arzumanyan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOSFET and method for fabricating same
- Patent number 8,536,645
- Issue date Sep 17, 2013
- International Rectifier Corporation
- Timothy D. Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated MOSFET and Schottky device
- Patent number 8,101,995
- Issue date Jan 24, 2012
- International Rectifier Corporation
- Timothy Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device fabrication using spacers
- Patent number 7,998,808
- Issue date Aug 16, 2011
- International Rectifier Corporation
- Vijay Viswanathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOSFET with sidewall spacer gates
- Patent number 7,671,441
- Issue date Mar 2, 2010
- International Rectifier Corporation
- Timothy Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Termination design for deep source electrode MOSFET
- Patent number 7,579,650
- Issue date Aug 25, 2009
- International Rectifier Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device
- Patent number 7,554,153
- Issue date Jun 30, 2009
- International Rectifier Corporation
- Timothy D. Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSgated power semiconductor device with source field electrode
- Patent number 7,482,654
- Issue date Jan 27, 2009
- International Rectifier Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low voltage superjunction MOSFET
- Patent number 7,410,851
- Issue date Aug 12, 2008
- International Rectifier Corporation
- Timothy Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench mosfet with field relief feature
- Patent number 7,161,208
- Issue date Jan 9, 2007
- International Rectifier Corporation
- Kyle Spring
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE HAVING GATE TRENCHES AND FIELD PLATE TRENCHES...
- Publication number 20240405120
- Publication date Dec 5, 2024
- Infineon Technologies Austria AG
- Timothy Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Die with a Vertical Power Transistor Device
- Publication number 20240243130
- Publication date Jul 18, 2024
- Infineon Technologies Austria AG
- Andreas Peter Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A SHIELDING LAYER AND A METHOD OF FABRI...
- Publication number 20240194745
- Publication date Jun 13, 2024
- Infineon Technologies Austria AG
- Ling Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH GATE NMOS TRANSISTOR AND TRENCH GATE PMOS TRANSISTOR MONOLIT...
- Publication number 20240113115
- Publication date Apr 4, 2024
- Infineon Technologies Austria AG
- Harsh Naik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE HAVING COUNTER-DOPED REGIONS IN BOTH AN...
- Publication number 20240047517
- Publication date Feb 8, 2024
- Infineon Technologies Austria AG
- Robert Haase
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER TRANSISTOR DEVICE AND METHOD OF FABRICATING A TRANSISTOR DEVICE
- Publication number 20230352582
- Publication date Nov 2, 2023
- Infineon Technologies Austria AG
- Stefan Tegen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION STRUCTURE FOR SEPARATING DIFFERENT TRANSISTOR REGIONS ON...
- Publication number 20230335560
- Publication date Oct 19, 2023
- Infineon Technologies Austria AG
- Ling Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING A SEMICONDUCTOR DEVICE
- Publication number 20230307454
- Publication date Sep 28, 2023
- Infineon Technologies Austria AG
- Honghai He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING A SEMICONDUCTOR DEVICE
- Publication number 20230307450
- Publication date Sep 28, 2023
- Infineon Technologies Austria AG
- Harsh Naik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-CHIP ASSEMBLY AND METHODS OF PRODUCING MULTI-CHIP ASSEMBLIES
- Publication number 20230145931
- Publication date May 11, 2023
- Ling Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EDGE TERMINATION STRUCTURE FOR POWER TRANSISTOR DEVICES
- Publication number 20230116123
- Publication date Apr 13, 2023
- Infineon Technologies Austria AG
- Lina Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE AND METHOD FOR PRODUCING A TRANSISTOR DEVICE
- Publication number 20230098462
- Publication date Mar 30, 2023
- Infineon Technologies Austria AG
- Lina Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE AND METHOD FOR PRODUCING A TRANSISTOR DEVICE
- Publication number 20230101553
- Publication date Mar 30, 2023
- Weichun Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE HAVING CHARGE COMPENSATING FIELD PLATES IN-LINE W...
- Publication number 20220336594
- Publication date Oct 20, 2022
- Robert Haase
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD ELECTRODE TERMINATION STRUCTURE FOR TRENCH-BASED TRANSISTOR D...
- Publication number 20220109068
- Publication date Apr 7, 2022
- Ashita Mirchandani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench Field Electrode Termination Structure for Transistor Devices
- Publication number 20210083096
- Publication date Mar 18, 2021
- Ashita Mirchandani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having a Cavity
- Publication number 20170330943
- Publication date Nov 16, 2017
- Infineon Technologies Americas Corp.
- Robert Haase
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Fabricating a Power Semiconductor Device
- Publication number 20170330942
- Publication date Nov 16, 2017
- Infineon Technologies Americas Corp.
- Timothy D. Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Fabricating a Shallow and Narrow Trench FET
- Publication number 20170213909
- Publication date Jul 27, 2017
- Infineon Technologies Americas Corp.
- Timothy D. Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming a Semiconductor Structure Having Integrated Snubb...
- Publication number 20170186861
- Publication date Jun 29, 2017
- Infineon Technologies Americas Corp.
- Kapil Kelkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical FET Having Reduced On-Resistance
- Publication number 20160172484
- Publication date Jun 16, 2016
- Infineon Technologies Americas Corp.
- Harsh Naik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power FET Having Reduced Gate Resistance
- Publication number 20160172295
- Publication date Jun 16, 2016
- Infineon Technologies Americas Corp.
- Alex Lollio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structure Having Integrated Snubber Resistance and Re...
- Publication number 20160104773
- Publication date Apr 14, 2016
- INTERNATIONAL RECTIFIER CORPORATION
- Kapil Kelkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device with Source Trench and Termination Trenc...
- Publication number 20160104766
- Publication date Apr 14, 2016
- INTERNATIONAL RECTIFIER CORPORATION
- Kapil Kelkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device with Low RDSON and High Breakdown Voltage
- Publication number 20150325685
- Publication date Nov 12, 2015
- International Rectifier Corporation
- Timothy D. Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device with Embedded Field Electrodes
- Publication number 20150279946
- Publication date Oct 1, 2015
- INTERNATIONAL RECTIFIER CORPORATION
- Timothy D. Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device with Contiguous Gate Trenches and Offset...
- Publication number 20140374825
- Publication date Dec 25, 2014
- Kapil Kelkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with a Field Plate Trench Having a Thick Botto...
- Publication number 20140339669
- Publication date Nov 20, 2014
- International Rectifier Corporation
- Timothy D. Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with a Thick Bottom Field Plate Trench Having...
- Publication number 20140339670
- Publication date Nov 20, 2014
- International Rectifier Corporation
- Timothy D. Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with a Field Plate Double Trench Having a Thic...
- Publication number 20140339651
- Publication date Nov 20, 2014
- INTERNATIONAL RECTIFIER CORPORATION
- Timothy D. Henson
- H01 - BASIC ELECTRIC ELEMENTS

Timothy D. Henson

Person

Patents Grantslast 30 patents

Isolation structure for separating different transistor regions on...

Trench field electrode termination structure for transistor devices

Method of fabricating a power semiconductor device

Trench FET with ruggedness enhancement regions

Semiconductor device having a cavity

Method of forming a semiconductor structure having integrated snubb...

Power semiconductor device with contiguous gate trenches and offset...

Power semiconductor device with embedded field electrodes

Semiconductor device with a field plate double trench having a thic...

Semiconductor device having a cavity and method for manufacturing t...

Semiconductor device including a gate trench having a gate electrod...

Method for fabricating a shallow and narrow trench FET and related...

Semiconductor structure having integrated snubber resistance

Power semiconductor device with source trench and termination trenc...

Vertical FET having reduced on-resistance

Semiconductor device with a field plate trench having a thick botto...

Semiconductor device with a thick bottom field plate trench having...

Power semiconductor device with reduced on-resistance and increased...

MOSgated power semiconductor device with source field electrode

Buck converter power package

Semiconductor device including a voltage controlled termination str...

Trench MOSFET and method for fabricating same

Integrated MOSFET and Schottky device

Semiconductor device fabrication using spacers

Trench MOSFET with sidewall spacer gates

Termination design for deep source electrode MOSFET

Power semiconductor device

MOSgated power semiconductor device with source field electrode

Low voltage superjunction MOSFET

Trench mosfet with field relief feature

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE HAVING GATE TRENCHES AND FIELD PLATE TRENCHES...

Semiconductor Die with a Vertical Power Transistor Device

SEMICONDUCTOR DEVICE HAVING A SHIELDING LAYER AND A METHOD OF FABRI...

TRENCH GATE NMOS TRANSISTOR AND TRENCH GATE PMOS TRANSISTOR MONOLIT...

POWER SEMICONDUCTOR DEVICE HAVING COUNTER-DOPED REGIONS IN BOTH AN...

POWER TRANSISTOR DEVICE AND METHOD OF FABRICATING A TRANSISTOR DEVICE

ISOLATION STRUCTURE FOR SEPARATING DIFFERENT TRANSISTOR REGIONS ON...

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING A SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING A SEMICONDUCTOR DEVICE

MULTI-CHIP ASSEMBLY AND METHODS OF PRODUCING MULTI-CHIP ASSEMBLIES

EDGE TERMINATION STRUCTURE FOR POWER TRANSISTOR DEVICES

TRANSISTOR DEVICE AND METHOD FOR PRODUCING A TRANSISTOR DEVICE

TRANSISTOR DEVICE AND METHOD FOR PRODUCING A TRANSISTOR DEVICE

TRANSISTOR DEVICE HAVING CHARGE COMPENSATING FIELD PLATES IN-LINE W...

FIELD ELECTRODE TERMINATION STRUCTURE FOR TRENCH-BASED TRANSISTOR D...

Trench Field Electrode Termination Structure for Transistor Devices

Semiconductor Device Having a Cavity

Method of Fabricating a Power Semiconductor Device

Method for Fabricating a Shallow and Narrow Trench FET

Method of Forming a Semiconductor Structure Having Integrated Snubb...

Vertical FET Having Reduced On-Resistance

Power FET Having Reduced Gate Resistance

Semiconductor Structure Having Integrated Snubber Resistance and Re...

Power Semiconductor Device with Source Trench and Termination Trenc...

Power Semiconductor Device with Low RDSON and High Breakdown Voltage

Power Semiconductor Device with Embedded Field Electrodes

Power Semiconductor Device with Contiguous Gate Trenches and Offset...

Semiconductor Device with a Field Plate Trench Having a Thick Botto...

Semiconductor Device with a Thick Bottom Field Plate Trench Having...

Semiconductor Device with a Field Plate Double Trench Having a Thic...