Timothy J. McArdle

Person

Hopewell Junction, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Faceted epitaxial source/drain regions
- Patent number 10,756,184
- Issue date Aug 25, 2020
- GLOBALFOUNDRIES Inc.
- George R. Mulfinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned sacrificial epitaxial capping for trench silicide
- Patent number 10,741,556
- Issue date Aug 11, 2020
- GLOBALFOUNDRIES Inc.
- George R. Mulfinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistors with a grown silicon-germanium channel
- Patent number 10,680,065
- Issue date Jun 9, 2020
- GlobalFoundries Inc.
- George R. Mulfinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure including laterally recessed source/dr...
- Patent number 10,396,078
- Issue date Aug 27, 2019
- GLOBALFOUNDRIES Inc.
- Judson R. Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming a gate-to-source/drain contact structure
- Patent number 10,388,654
- Issue date Aug 20, 2019
- GLOBALFOUNDRIES Inc.
- Judson R. Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Post gate silicon germanium channel condensation and method for pro...
- Patent number 10,326,007
- Issue date Jun 18, 2019
- GLOBALFOUNDRIES Inc.
- George Robert Mulfinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strain retention semiconductor member for channel SiGe layer of pFET
- Patent number 10,236,343
- Issue date Mar 19, 2019
- GLOBALFOUNDRIES Inc.
- Dina H. Triyoso
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods, apparatus and system for forming increased surface regions...
- Patent number 10,204,984
- Issue date Feb 12, 2019
- GLOBALFOUNDRIES Inc.
- Matthew W. Stoker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFETs with strained channels and reduced on state resistance
- Patent number 10,134,876
- Issue date Nov 20, 2018
- GLOBALFOUNDRIES Inc.
- Bharat V. Krishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Post gate silicon germanium channel condensation and method for pro...
- Patent number 10,043,893
- Issue date Aug 7, 2018
- GLOBALFOUNDRIES Inc.
- George Robert Mulfinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure including laterally recessed source/dr...
- Patent number 10,020,307
- Issue date Jul 10, 2018
- GLOBALFOUNDRIES Inc.
- Judson R. Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of modulating the morphology of epitaxial semiconductor mat...
- Patent number 9,953,873
- Issue date Apr 24, 2018
- GLOBALFOUNDRIES Inc.
- Bhupesh Chandra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Recess liner for silicon germanium fin formation
- Patent number 9,893,154
- Issue date Feb 13, 2018
- GLOBALFOUNDRIES Inc.
- Timothy J. McArdle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming defect-free relaxed SiGe fins
- Patent number 9,882,052
- Issue date Jan 30, 2018
- GLOBALFOUNDRIES Inc.
- Robert Judson Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned sacrificial epitaxial capping for trench silicide
- Patent number 9,812,453
- Issue date Nov 7, 2017
- GLOBALFOUNDRIES Inc.
- George R. Mulfinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Carbon nanostructure device fabrication utilizing protect layers
- Patent number 9,768,288
- Issue date Sep 19, 2017
- International Business Machines Corporation
- Jack O. Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buffer layer for modulating Vt across devices
- Patent number 9,722,045
- Issue date Aug 1, 2017
- GLOBALFOUNDRIES Inc.
- Bhupesh Chandra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Recess liner for silicon germanium fin formation
- Patent number 9,698,226
- Issue date Jul 4, 2017
- GLOBALFOUNDRIES Inc.
- Timothy J. McArdle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Uniform junction formation in FinFETs
- Patent number 9,466,616
- Issue date Oct 11, 2016
- GLOBALFOUNDRIES Inc.
- Eric C. T. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for selectively forming a layer of increased dopant concent...
- Patent number 9,349,864
- Issue date May 24, 2016
- GLOBALFOUNDRIES, INC.
- Timothy James Mcardle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Uniform junction formation in FinFETs
- Patent number 9,318,608
- Issue date Apr 19, 2016
- GLOBALFOUNDRIES Inc.
- Eric C. T. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxially grown silicon germanium channel FinFET with silicon und...
- Patent number 9,287,264
- Issue date Mar 15, 2016
- GLOBALFOUNDRIES Inc.
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Faceted intrinsic epitaxial buffer layer for reducing short channel...
- Patent number 9,287,399
- Issue date Mar 15, 2016
- International Business Machines Corporation
- Bhupesh Chandra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of a graphene layer on a large substrate
- Patent number 9,236,250
- Issue date Jan 12, 2016
- GLOBALFOUNDRIES Inc.
- Jack O. Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Graphene transistor with a sublithographic channel width
- Patent number 9,236,477
- Issue date Jan 12, 2016
- GLOBALFOUNDRIES Inc.
- Jack O. Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single crystal source-drain merged by polycrystalline material
- Patent number 9,123,826
- Issue date Sep 1, 2015
- International Business Machines Corporation
- Eric C. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Faceted intrinsic epitaxial buffer layer for reducing short channel...
- Patent number 8,940,595
- Issue date Jan 27, 2015
- International Business Machines Corporation
- Bhupesh Chandra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Graphene growth on a non-hexagonal lattice
- Patent number 8,877,340
- Issue date Nov 4, 2014
- International Business Machines Corporation
- Jack O. Chu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Carbon nanostructure device fabrication utilizing protect layers
- Patent number 8,828,762
- Issue date Sep 9, 2014
- International Business Machines Corporation
- Jack O. Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and circuit including ordered arrangement o...
- Patent number 8,759,824
- Issue date Jun 24, 2014
- International Business Machines Corporation
- Christos D. Dimitrakopoulos
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FACETED EPITAXIAL SOURCE/DRAIN REGIONS
- Publication number 20200144365
- Publication date May 7, 2020
- GLOBALFOUNDRIES INC.
- George R. MULFINGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTORS WITH A GROWN SILICON-GERMANIUM CHANNEL
- Publication number 20200044029
- Publication date Feb 6, 2020
- GLOBALFOUNDRIES INC.
- George R. Mulfinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE WORK FUNCTION ENABLEMENT FOR SILICON NANOWIRE DEVICE
- Publication number 20190221483
- Publication date Jul 18, 2019
- GLOBALFOUNDRIES INC.
- George MULFINGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING A GATE-TO-SOURCE/DRAIN CONTACT STRUCTURE
- Publication number 20190214387
- Publication date Jul 11, 2019
- GLOBALFOUNDRIES INC.
- Judson R. Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POST GATE SILICON GERMANIUM CHANNEL CONDENSATION AND METHOD FOR PRO...
- Publication number 20190043967
- Publication date Feb 7, 2019
- GLOBALFOUNDRIES INC.
- George Robert MULFINGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS, APPARATUS AND SYSTEM FOR FORMING INCREASED SURFACE REGIONS...
- Publication number 20190043944
- Publication date Feb 7, 2019
- GLOBALFOUNDRIES INC.
- Matthew W. Stoker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHAPED CAVITY FOR EPITAXIAL SEMICONDUCTOR GROWTH
- Publication number 20190027370
- Publication date Jan 24, 2019
- GLOBALFOUNDRIES INC.
- George R. Mulfinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFETs WITH STRAINED CHANNELS AND REDUCED ON STATE RESISTANCE
- Publication number 20180286982
- Publication date Oct 4, 2018
- GLOBALFOUNDRIES INC.
- Bharat V. KRISHNAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE INCLUDING LATERALLY RECESSED SOURCE/DR...
- Publication number 20180286863
- Publication date Oct 4, 2018
- GLOBALFOUNDRIES INC.
- Judson R. Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED SACRIFICIAL EPITAXIAL CAPPING FOR TRENCH SILICIDE
- Publication number 20180233505
- Publication date Aug 16, 2018
- GLOBALFOUNDRIES INC.
- George R. MULFINGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAIN RETENTION SEMICONDUCTOR MEMBER FOR CHANNEL SiGe LAYER OF pFET
- Publication number 20180190768
- Publication date Jul 5, 2018
- GLOBALFOUNDRIES INC.
- Dina H. Triyoso
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING DEFECT-FREE RELAXED SiGe FINS
- Publication number 20180130656
- Publication date May 10, 2018
- GLOBALFOUNDRIES INC.
- Judson Robert Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING DEFECT-FREE RELAXED SIGE FINS
- Publication number 20180006155
- Publication date Jan 4, 2018
- GLOBALFOUNDRIES INC.
- Robert Judson HOLT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MODULATION OF THE MORPHOLOGY OF EPITAXIAL SEMICONDUCTOR MATERIAL
- Publication number 20170345719
- Publication date Nov 30, 2017
- GLOBALFOUNDRIES INC.
- Bhupesh Chandra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RECESS LINER FOR SILICON GERMANIUM FIN FORMATION
- Publication number 20170294515
- Publication date Oct 12, 2017
- GLOBALFOUNDRIES INC.
- Timothy J. MCARDLE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CARBON NANOSTRUCTURE DEVICE FABRICATION UTILIZING PROTECT LAYERS
- Publication number 20170186881
- Publication date Jun 29, 2017
- International Business Machines Corporation
- JACK O. CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BUFFER LAYER FOR MODULATING Vt ACROSS DEVICES
- Publication number 20170117387
- Publication date Apr 27, 2017
- GLOBALFOUNDRIES INC.
- Bhupesh Chandra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING REPLACEMENT FINS COMPRISED OF MULTIPLE LAYERS OF...
- Publication number 20170033181
- Publication date Feb 2, 2017
- GLOBALFOUNDRIES INC.
- Timothy J. McArdle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNIFORM JUNCTION FORMATION IN FINFETS
- Publication number 20160181285
- Publication date Jun 23, 2016
- GLOBALFOUNDRIES INC.
- Eric C.T. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIALLY GROWN SILICON GERMANIUM CHANNEL FINFET WITH SILICON UND...
- Publication number 20160163707
- Publication date Jun 9, 2016
- GLOBALFOUNDRIES INC.
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNIFORM JUNCTION FORMATION IN FINFETS
- Publication number 20160093740
- Publication date Mar 31, 2016
- International Business Machines Corporation
- Eric C. T. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE-CRYSTAL SOURCE-DRAIN MERGED BY POLYCRYSTALLINE MATERIAL
- Publication number 20150270332
- Publication date Sep 24, 2015
- International Business Machines Corporation
- Eric C. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GRAPHENE TRANSISTOR WITH A SUBLITHOGRAPHIC CHANNEL WIDTH
- Publication number 20150236147
- Publication date Aug 20, 2015
- International Business Machines Corporation
- Jack O. Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FACETED INTRINSIC EPITAXIAL BUFFER LAYER FOR REDUCING SHORT CHANNEL...
- Publication number 20150084096
- Publication date Mar 26, 2015
- International Business Machines Corporation
- Bhupesh Chandra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CARBON NANOSTRUCTURE DEVICE FABRICATION UTILIZING PROTECT LAYERS
- Publication number 20140374702
- Publication date Dec 25, 2014
- JACK O. CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FACETED INTRINSIC EPITAXIAL BUFFER LAYER FOR REDUCING SHORT CHANNEL...
- Publication number 20140264558
- Publication date Sep 18, 2014
- International Business Machines Corporation
- Bhupesh Chandra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CARBON NANOSTRUCTURE DEVICE FABRICATION UTILIZING PROTECT LAYERS
- Publication number 20140225193
- Publication date Aug 14, 2014
- International Business Machines Corporation
- JACK O. CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF A GRAPHENE LAYER ON A LARGE SUBSTRATE
- Publication number 20130285014
- Publication date Oct 31, 2013
- Jack O. Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR CHIP WITH GRAPHENE BASED DEVICES IN AN INTERCONNECT S...
- Publication number 20130203246
- Publication date Aug 8, 2013
- International Business Machines Corporation
- Christos D. Dimitrakopoulos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND CIRCUIT INCLUDING ORDERED ARRANGEMENT O...
- Publication number 20130119350
- Publication date May 16, 2013
- International Business Machines Corporation
- Christos D. Dimitrakopoulos
- B82 - NANO-TECHNOLOGY

Timothy J. McArdle

Person

Patents Grantslast 30 patents

Faceted epitaxial source/drain regions

Self-aligned sacrificial epitaxial capping for trench silicide

Field-effect transistors with a grown silicon-germanium channel

Integrated circuit structure including laterally recessed source/dr...

Methods of forming a gate-to-source/drain contact structure

Post gate silicon germanium channel condensation and method for pro...

Strain retention semiconductor member for channel SiGe layer of pFET

Methods, apparatus and system for forming increased surface regions...

FinFETs with strained channels and reduced on state resistance

Post gate silicon germanium channel condensation and method for pro...

Integrated circuit structure including laterally recessed source/dr...

Methods of modulating the morphology of epitaxial semiconductor mat...

Recess liner for silicon germanium fin formation

Forming defect-free relaxed SiGe fins

Self-aligned sacrificial epitaxial capping for trench silicide

Carbon nanostructure device fabrication utilizing protect layers

Buffer layer for modulating Vt across devices

Recess liner for silicon germanium fin formation

Uniform junction formation in FinFETs

Methods for selectively forming a layer of increased dopant concent...

Uniform junction formation in FinFETs

Epitaxially grown silicon germanium channel FinFET with silicon und...

Faceted intrinsic epitaxial buffer layer for reducing short channel...

Formation of a graphene layer on a large substrate

Graphene transistor with a sublithographic channel width

Single crystal source-drain merged by polycrystalline material

Faceted intrinsic epitaxial buffer layer for reducing short channel...

Graphene growth on a non-hexagonal lattice

Carbon nanostructure device fabrication utilizing protect layers

Semiconductor structure and circuit including ordered arrangement o...

Patents Applicationslast 30 patents

FACETED EPITAXIAL SOURCE/DRAIN REGIONS

FIELD-EFFECT TRANSISTORS WITH A GROWN SILICON-GERMANIUM CHANNEL

SINGLE WORK FUNCTION ENABLEMENT FOR SILICON NANOWIRE DEVICE

METHODS OF FORMING A GATE-TO-SOURCE/DRAIN CONTACT STRUCTURE

POST GATE SILICON GERMANIUM CHANNEL CONDENSATION AND METHOD FOR PRO...

METHODS, APPARATUS AND SYSTEM FOR FORMING INCREASED SURFACE REGIONS...

SHAPED CAVITY FOR EPITAXIAL SEMICONDUCTOR GROWTH

FINFETs WITH STRAINED CHANNELS AND REDUCED ON STATE RESISTANCE

INTEGRATED CIRCUIT STRUCTURE INCLUDING LATERALLY RECESSED SOURCE/DR...

SELF-ALIGNED SACRIFICIAL EPITAXIAL CAPPING FOR TRENCH SILICIDE

STRAIN RETENTION SEMICONDUCTOR MEMBER FOR CHANNEL SiGe LAYER OF pFET

FORMING DEFECT-FREE RELAXED SiGe FINS

FORMING DEFECT-FREE RELAXED SIGE FINS

MODULATION OF THE MORPHOLOGY OF EPITAXIAL SEMICONDUCTOR MATERIAL

RECESS LINER FOR SILICON GERMANIUM FIN FORMATION

CARBON NANOSTRUCTURE DEVICE FABRICATION UTILIZING PROTECT LAYERS

BUFFER LAYER FOR MODULATING Vt ACROSS DEVICES

METHODS OF FORMING REPLACEMENT FINS COMPRISED OF MULTIPLE LAYERS OF...

UNIFORM JUNCTION FORMATION IN FINFETS

EPITAXIALLY GROWN SILICON GERMANIUM CHANNEL FINFET WITH SILICON UND...

UNIFORM JUNCTION FORMATION IN FINFETS

SINGLE-CRYSTAL SOURCE-DRAIN MERGED BY POLYCRYSTALLINE MATERIAL

GRAPHENE TRANSISTOR WITH A SUBLITHOGRAPHIC CHANNEL WIDTH

FACETED INTRINSIC EPITAXIAL BUFFER LAYER FOR REDUCING SHORT CHANNEL...

CARBON NANOSTRUCTURE DEVICE FABRICATION UTILIZING PROTECT LAYERS

FACETED INTRINSIC EPITAXIAL BUFFER LAYER FOR REDUCING SHORT CHANNEL...

CARBON NANOSTRUCTURE DEVICE FABRICATION UTILIZING PROTECT LAYERS

FORMATION OF A GRAPHENE LAYER ON A LARGE SUBSTRATE

SEMICONDUCTOR CHIP WITH GRAPHENE BASED DEVICES IN AN INTERCONNECT S...

SEMICONDUCTOR STRUCTURE AND CIRCUIT INCLUDING ORDERED ARRANGEMENT O...