Tohru Ozaki

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Nonvolatile semiconductor memory and method for manufacturing the same
- Patent number 8,476,693
- Issue date Jul 2, 2013
- Kabushiki Kaisha Toshiba
- Takayuki Toba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a transistor and a ferroelectric cap...
- Patent number 8,362,533
- Issue date Jan 29, 2013
- Kabushiki Kaisha Toshiba
- Tohru Ozaki
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and method for manufacturing same
- Patent number 8,283,791
- Issue date Oct 9, 2012
- Kabushiki Kaisha Toshiba
- Takayuki Toba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor apparatus and method for manufacturing the same
- Patent number 7,821,047
- Issue date Oct 26, 2010
- Kabushiki Kaisha Toshiba
- Tohru Ozaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device
- Patent number 7,816,717
- Issue date Oct 19, 2010
- Kabushiki Kaisha Toshiba
- Tohru Ozaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a transistor and a ferroelectric cap...
- Patent number 7,812,384
- Issue date Oct 12, 2010
- Kabushiki Kaisha Toshiba
- Tohru Ozaki
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory having ferroelectric capacitor
- Patent number 7,763,920
- Issue date Jul 27, 2010
- Kabushiki Kaisha Toshiba
- Yoshinori Kumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor storage device and method of manufacturing the same
- Patent number 7,612,398
- Issue date Nov 3, 2009
- Kabushiki Kaisha Toshiba
- Yoshinori Kumura
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile semiconductor memory device and method for fabricating...
- Patent number 7,573,084
- Issue date Aug 11, 2009
- Kabushiki Kaisha Toshiba
- Yoshinori Kumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including direct contact between capacitor ele...
- Patent number 7,417,274
- Issue date Aug 26, 2008
- Kabushiki Kaisha Toshiba
- Tohru Ozaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device having ferroelectric capacitors with hy...
- Patent number 7,400,005
- Issue date Jul 15, 2008
- Kabushiki Kaisha Toshiba
- Yoshinori Kumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 7,348,617
- Issue date Mar 25, 2008
- Kabushiki Kaisha Toshiba
- Yoshinori Kumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor storage device and manufacturing method for the same
- Patent number 7,312,488
- Issue date Dec 25, 2007
- Kabushiki Kaisha Toshiba
- Tohru Ozaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device and method of manufacturing the same
- Patent number 7,214,982
- Issue date May 8, 2007
- Kabushiki Kaisha Toshiba
- Yoshinori Kumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device having ferroelectric capacitor and meth...
- Patent number 7,095,068
- Issue date Aug 22, 2006
- Kabushiki Kaisha Toshiba
- Yoshinori Kumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric memory device and method of manufacturing the same
- Patent number 7,091,537
- Issue date Aug 15, 2006
- Kabushiki Kaisha Toshiba
- Tohru Ozaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 7,042,037
- Issue date May 9, 2006
- Kabushiki Kaisha Toshiba
- Hiroshi Itokawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device and method of fabricating the same
- Patent number 7,022,531
- Issue date Apr 4, 2006
- Kabushiki Kaisha Toshiba
- Tohru Ozaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferro-electric memory device and method of manufacturing the same
- Patent number 6,972,990
- Issue date Dec 6, 2005
- Kabushiki Kaisha Toshiba
- Yoshinori Kumura
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device and its manufacturing method
- Patent number 6,897,502
- Issue date May 24, 2005
- Kabushiki Kaisha Toshiba
- Shinichi Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having ferroelectric capacitor and method for...
- Patent number 6,762,065
- Issue date Jul 13, 2004
- Kabushiki Kaisha Toshiba
- Hiroyuki Kanaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having ferroelectic memory cells and method of...
- Patent number 6,759,251
- Issue date Jul 6, 2004
- Kabushiki Kaisha Toshiba
- Tohru Ozaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure of a capacitor section of a dynamic random-access memory
- Patent number 6,635,933
- Issue date Oct 21, 2003
- Kabushiki Kaisha Toshiba
- Yutaka Ishibashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including dummy upper electrode
- Patent number 6,611,015
- Issue date Aug 26, 2003
- Kabushiki Kaisha Toshiba
- Tohru Ozaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having ferroelectric capacitor and method for...
- Patent number 6,603,161
- Issue date Aug 5, 2003
- Kabushiki Kaisha Toshiba
- Hiroyuki Kanaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having ferroelectric memory cells and method o...
- Patent number 6,521,929
- Issue date Feb 18, 2003
- Kabushiki Kaisha Toshiba
- Tohru Ozaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 6,448,618
- Issue date Sep 10, 2002
- Kabushiki Kaisha Toshiba
- Satoshi Inaba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure of a capacitor section of a dynamic random-access memory
- Patent number 6,303,429
- Issue date Oct 16, 2001
- Kabushiki Kaisha Toshiba
- Yutaka Ishibashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device and method for manufacturing the same
- Patent number 6,180,973
- Issue date Jan 30, 2001
- Kabushiki Kaisha Toshiba
- Tohru Ozaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 6,162,720
- Issue date Dec 19, 2000
- Kabushiki Kaisha Toshiba
- Tohru Ozaki
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING...
- Publication number 20130049098
- Publication date Feb 28, 2013
- Kabushiki Kaisha Toshiba
- Tatsuo IZUMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONVOLATILE SEMICONDUCTOR MEMORY AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20120139024
- Publication date Jun 7, 2012
- Kabushiki Kaisha Toshiba
- Takayuki TOBA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING...
- Publication number 20120106252
- Publication date May 3, 2012
- Kabushiki Kaisha Toshiba
- Tohru OZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20120020158
- Publication date Jan 26, 2012
- Kabushiki Kaisha Toshiba
- Tohru OZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20120001331
- Publication date Jan 5, 2012
- KABUSHI KAISHA TOSHIBA
- Takayuki Toba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR APPARATUS AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20110031544
- Publication date Feb 10, 2011
- KABUSHIKI KAISHA TOSHIBA
- Tohru Ozaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20100320518
- Publication date Dec 23, 2010
- KABUSHIKI KAISHA TOSHIBA
- Tohru Ozaki
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE INCLUDING FERROELECTRIC FILM AND A METH...
- Publication number 20100193849
- Publication date Aug 5, 2010
- Kabushiki Kaisha Toshiba
- Jun NISHIMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20100163943
- Publication date Jul 1, 2010
- Kabushiki Kaisha Toshiba
- Tohru Ozaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FABRICATING SEMICONDUCTO...
- Publication number 20100123177
- Publication date May 20, 2010
- Kabushiki Kaisha Toshiba
- Tohru OZAKI
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20100117128
- Publication date May 13, 2010
- Kabushiki Kaisha Toshiba
- Saku Hashiura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20100072525
- Publication date Mar 25, 2010
- Kabushiki Kaisha Toshiba
- Yoshiro Shimojo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20100072527
- Publication date Mar 25, 2010
- Kabushiki Kaisha Toshiba
- Tohru Ozaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STORAGE DEVICE
- Publication number 20100012994
- Publication date Jan 21, 2010
- Kabushiki Kaisha Toshiba
- Tohru Ozaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20090127602
- Publication date May 21, 2009
- Kabushiki Kaisha Toshiba
- Tohru Ozaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND FABRICATING METHOD FOR SEMICONDUCTO...
- Publication number 20090095993
- Publication date Apr 16, 2009
- Kabushiki Kaisha Toshiba
- Tohru Ozaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20080308902
- Publication date Dec 18, 2008
- Kabushiki Kaisha Toshiba
- Yoshinori KUMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20080265298
- Publication date Oct 30, 2008
- Kabushiki Kaisha Toshiba
- Tohru OZAKI
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY DEVICE
- Publication number 20080230818
- Publication date Sep 25, 2008
- Kabushiki Kaisha Toshiba
- Yoshinori Kumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20080179646
- Publication date Jul 31, 2008
- Tohru Ozaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20080173912
- Publication date Jul 24, 2008
- Yoshinori Kumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY AND METHOD OF MANUFACTURING THE SAME
- Publication number 20080135901
- Publication date Jun 12, 2008
- Yoshiro SHIMOJO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR APPARATUS AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20080079046
- Publication date Apr 3, 2008
- Kabushiki Kaisha Toshiba
- Tohru Ozaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-volatile semiconductor memory device and method for fabricating...
- Publication number 20080073682
- Publication date Mar 27, 2008
- Yoshinori Kumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor memory and method for manufacturing the semiconductor...
- Publication number 20080061335
- Publication date Mar 13, 2008
- Yoshinori Kumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20070072310
- Publication date Mar 29, 2007
- Yoshinori Kumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device including direct contact between capacitor ele...
- Publication number 20070054462
- Publication date Mar 8, 2007
- Tohru Ozaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20070045687
- Publication date Mar 1, 2007
- Yoshinori Kumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor memory device using a ferroelectric capacitor
- Publication number 20060280023
- Publication date Dec 14, 2006
- Katsuhiko Hoya
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor memory device and its manufacturing method
- Publication number 20060180894
- Publication date Aug 17, 2006
- Yoshinori Kumura
- H01 - BASIC ELECTRIC ELEMENTS

Tohru Ozaki

Person

Patents Grantslast 30 patents

Nonvolatile semiconductor memory and method for manufacturing the same

Semiconductor device including a transistor and a ferroelectric cap...

Semiconductor device and method for manufacturing same

Semiconductor apparatus and method for manufacturing the same

Semiconductor memory device

Semiconductor device including a transistor and a ferroelectric cap...

Semiconductor memory having ferroelectric capacitor

Semiconductor storage device and method of manufacturing the same

Non-volatile semiconductor memory device and method for fabricating...

Semiconductor device including direct contact between capacitor ele...

Semiconductor memory device having ferroelectric capacitors with hy...

Semiconductor device

Semiconductor storage device and manufacturing method for the same

Semiconductor memory device and method of manufacturing the same

Semiconductor memory device having ferroelectric capacitor and meth...

Ferroelectric memory device and method of manufacturing the same

Semiconductor device

Semiconductor memory device and method of fabricating the same

Ferro-electric memory device and method of manufacturing the same

Semiconductor memory device and its manufacturing method

Semiconductor device having ferroelectric capacitor and method for...

Semiconductor device having ferroelectic memory cells and method of...

Structure of a capacitor section of a dynamic random-access memory

Semiconductor device including dummy upper electrode

Semiconductor device having ferroelectric capacitor and method for...

Semiconductor device having ferroelectric memory cells and method o...

Semiconductor device and method for manufacturing the same

Structure of a capacitor section of a dynamic random-access memory

Semiconductor memory device and method for manufacturing the same

Semiconductor device and method of manufacturing the same

Patents Applicationslast 30 patents

NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING...

NONVOLATILE SEMICONDUCTOR MEMORY AND METHOD FOR MANUFACTURING THE SAME

NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING...

SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

SEMICONDUCTOR APPARATUS AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE

SEMICONDUCTOR MEMORY DEVICE INCLUDING FERROELECTRIC FILM AND A METH...

SEMICONDUCTOR MEMORY DEVICE

SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FABRICATING SEMICONDUCTO...

SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR STORAGE DEVICE

SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR MEMORY DEVICE AND FABRICATING METHOD FOR SEMICONDUCTO...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

NON-VOLATILE MEMORY DEVICE

SEMICONDUCTOR MEMORY DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR MEMORY AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR APPARATUS AND METHOD FOR MANUFACTURING THE SAME

Non-volatile semiconductor memory device and method for fabricating...

Semiconductor memory and method for manufacturing the semiconductor...

Semiconductor device and method of manufacturing the same

Semiconductor device including direct contact between capacitor ele...

Semiconductor device

Semiconductor memory device using a ferroelectric capacitor

Semiconductor memory device and its manufacturing method