Tomohide Terashima

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device
- Patent number 11,670,634
- Issue date Jun 6, 2023
- Mitsubishi Electric Corporation
- Tomohide Terashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,552,073
- Issue date Jan 10, 2023
- Mitsubishi Electric Corporation
- Sho Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing same
- Patent number 11,217,449
- Issue date Jan 4, 2022
- Mitsubishi Electric Corporation
- Tomohide Terashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing same
- Patent number 11,183,386
- Issue date Nov 23, 2021
- Mitsubishi Electric Corporation
- Tomohide Terashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device manufacturing method and semiconductor manufac...
- Patent number 9,159,563
- Issue date Oct 13, 2015
- Mitsubishi Electric Corporation
- Tomohide Terashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 9,048,111
- Issue date Jun 2, 2015
- Mitsubishi Electric Corporation
- Junichi Yamashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 8,878,239
- Issue date Nov 4, 2014
- Mitsubishi Electric Corporation
- Tomohide Terashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with reduced potential between adjacent floati...
- Patent number 8,772,903
- Issue date Jul 8, 2014
- Mitsubishi Electric Corporation
- Tomohide Terashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device element formed on SOI substrate comprising a h...
- Patent number 8,710,617
- Issue date Apr 29, 2014
- Mitsubishi Electric Corporation
- Junichi Yamashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device supplying charging current to element to be ch...
- Patent number 8,674,471
- Issue date Mar 18, 2014
- Mitsubishi Electric Corporation
- Tomohide Terashima
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Semiconductor device
- Patent number 8,466,515
- Issue date Jun 18, 2013
- Mitsubishi Electric Corporation
- Tomohide Terashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device supplying charging current to element to be ch...
- Patent number 8,395,231
- Issue date Mar 12, 2013
- Mitsubishi Electric Corporation
- Tomohide Terashima
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Semiconductor device internally having insulated gate bipolar trans...
- Patent number 8,120,107
- Issue date Feb 21, 2012
- Mitsubishi Electric Corporation
- Tomohide Terashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 8,093,660
- Issue date Jan 10, 2012
- Mitsubishi Electric Corporation
- Tomohide Terashima
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor device internally having insulated gate bipolar trans...
- Patent number 7,898,029
- Issue date Mar 1, 2011
- Mitsubishi Electric Corporation
- Tomohide Terashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a plurality of isolated conductive films
- Patent number 7,855,427
- Issue date Dec 21, 2010
- Mitsubushi Denki Kabushiki Kaisha
- Tomohide Terashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a high breakdown voltage device
- Patent number 7,825,430
- Issue date Nov 2, 2010
- Mitsubishi Electric Corporation
- Tomohide Terashima
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Structure of a high breakdown voltage element for use in high power...
- Patent number 7,786,532
- Issue date Aug 31, 2010
- Mitsubishi Electric Corporation
- Tomohide Terashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device provided with floating electrode
- Patent number 7,755,168
- Issue date Jul 13, 2010
- Mitsubishi Electric Corporation
- Tomohide Terashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 7,723,802
- Issue date May 25, 2010
- Mitsubishi Denki Kabushiki Kaisha
- Tomohide Terashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 7,709,925
- Issue date May 4, 2010
- Mitsubishi Electric Corporation
- Tetsuo Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 7,598,587
- Issue date Oct 6, 2009
- Mitsubishi Denki Kabushiki Kaisha
- Tomohide Terashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 7,595,536
- Issue date Sep 29, 2009
- Mitsubishi Denki Kabushiki Kaisha
- Tomohide Terashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated semiconductor device and method of manufacturing thereof
- Patent number 7,541,248
- Issue date Jun 2, 2009
- Renesas Technology Corp.
- Tetsuya Nitta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure of a high breakdown voltage element for use in high power...
- Patent number 7,473,965
- Issue date Jan 6, 2009
- Mitsubishi Electric Corporation
- Tomohide Terashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated semiconductor device and method of manufacturing thereof
- Patent number 7,186,623
- Issue date Mar 6, 2007
- Renesas Technology Corp.
- Tetsuya Nitta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and driving circuit for semiconductor device
- Patent number 7,071,516
- Issue date Jul 4, 2006
- Mitsubishi Denki Kabushiki Kaisha
- Tomohide Terashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with structure for improving breakdown voltage
- Patent number 6,921,945
- Issue date Jul 26, 2005
- Mitsubishi Denki Kabushiki Kaisha
- Tomohide Terashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 6,894,348
- Issue date May 17, 2005
- Mitsubishi Denki Kabushiki Kaisha
- Tomohide Terashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with region that changes depth across the dire...
- Patent number 6,878,998
- Issue date Apr 12, 2005
- Mitsubishi Denki Kabushiki Kaisha
- Tomohide Terashima
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE, POWER CONVERSION DEVICE, AND METHOD OF MANUFA...
- Publication number 20240234348
- Publication date Jul 11, 2024
- Mitsubishi Electric Corporation
- Yasunari HINO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240203830
- Publication date Jun 20, 2024
- Mitsubishi Electric Corporation
- Masanori TSUKUDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, POWER CONVERSION DEVICE, AND METHOD OF MANUFA...
- Publication number 20240136309
- Publication date Apr 25, 2024
- Mitsubishi Electric Corporation
- Yasunari HINO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20220246603
- Publication date Aug 4, 2022
- Mitsubishi Electric Corporation
- Sho TANAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20200335496
- Publication date Oct 22, 2020
- Mitsubishi Electric Corporation
- Tomohide TERASHIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
- Publication number 20200203166
- Publication date Jun 25, 2020
- Mitsubishi Electric Corporation
- Tomohide TERASHIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR MANUFAC...
- Publication number 20150228488
- Publication date Aug 13, 2015
- Mitsubishi Electric Corporation
- Tomohide Terashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20150008557
- Publication date Jan 8, 2015
- Mitsubishi Electric Corporation
- Junichi YAMASHITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20140015004
- Publication date Jan 16, 2014
- MITSUBISHI ELECTRIC CORPORATION
- Tomohide TERASHIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20130292740
- Publication date Nov 7, 2013
- Mitsubishi Electric Corporation
- Junichi YAMASHITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE SUPPLYING CHARGING CURRENT TO ELEMENT TO BE CH...
- Publication number 20120319739
- Publication date Dec 20, 2012
- MITSUBISHI ELECTRIC CORPORATION
- Tomohide TERASHIMA
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20120168767
- Publication date Jul 5, 2012
- MITSUBISHI ELECTRIC CORPORATION
- Tomohide TERASHIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20120049240
- Publication date Mar 1, 2012
- MITSUBISHI ELECTRIC CORPORATION
- Tomohide TERASHIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INTERNALLY HAVING INSULATED GATE BIPOLAR TRANS...
- Publication number 20110108882
- Publication date May 12, 2011
- MITSUBISHI ELECTRIC CORPORATION
- Tomohide TERASHIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INTERNALLY HAVING INSULATED GATE BIPOLAR TRANS...
- Publication number 20100148214
- Publication date Jun 17, 2010
- MITSUBISHI ELECTRIC CORPORATION
- Tomohide TERASHIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20090294799
- Publication date Dec 3, 2009
- MITSUBISHI ELECTRIC CORPORATION
- Tomohide TERASHIMA
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20090057712
- Publication date Mar 5, 2009
- MITSUBISHI ELECTRIC CORPORATION
- Tomohide TERASHIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH A PLURALITY OF ISOLATED CONDUCTIVE FILMS
- Publication number 20080290443
- Publication date Nov 27, 2008
- Mitsubishi Denki Kabushiki Kaisha
- Tomohide Terashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20080251811
- Publication date Oct 16, 2008
- MITSUBISHI ELECTRIC CORPORATION
- Tomohide TERASHIMA
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
SEMICONDUCTOR DEVICE SUPPLYING CHARGING CURRENT TO ELEMENT TO BE CH...
- Publication number 20080224736
- Publication date Sep 18, 2008
- MITSUBISHI ELECTRIC CORPORATION
- Tomohide TERASHIMA
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20080179663
- Publication date Jul 31, 2008
- MITSUBISHI ELECTRIC CORPORATION
- Tomohide TERASHIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE PROVIDED WITH FLOATING ELECTRODE
- Publication number 20080093707
- Publication date Apr 24, 2008
- MITSUBISHI ELECTRIC CORPORATION
- Tomohide Terashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20070176220
- Publication date Aug 2, 2007
- MITSUBISHI ELECTRIC CORPORATION
- Tetsuo Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated semiconductor device and method of manufacturing thereof
- Publication number 20070148874
- Publication date Jun 28, 2007
- Renesas Technology Corp.
- Tetsuya Nitta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20070063293
- Publication date Mar 22, 2007
- Mitsubishi Denki Kabushiki Kaisha
- Tomohide Terashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20060043417
- Publication date Mar 2, 2006
- Mitsubishi Denki Kabushiki Kaisha
- Tomohide Terashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20060043475
- Publication date Mar 2, 2006
- Mitsubishi Denki Kabushiki Kaisha
- Tomohide Terashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device with structure for improving breakdown voltage
- Publication number 20050212042
- Publication date Sep 29, 2005
- Mitsubishi Denki Kabushiki Kaisha
- Tomohide Terashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and driving circuit for semiconductor device
- Publication number 20050072990
- Publication date Apr 7, 2005
- Mitsubishi Denki Kabushiki Kaisha
- Tomohide Terashima
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Semiconductor device with structure for improving breakdown voltage
- Publication number 20040227188
- Publication date Nov 18, 2004
- Mitsubishi Denki Kabushiki Kaisha
- Tomohide Terashima
- H01 - BASIC ELECTRIC ELEMENTS

Tomohide Terashima

Person

Patents Grantslast 30 patents

Semiconductor device

Semiconductor device

Semiconductor device and method of manufacturing same

Semiconductor device and method of manufacturing same

Semiconductor device manufacturing method and semiconductor manufac...

Semiconductor device

Semiconductor device

Semiconductor device with reduced potential between adjacent floati...

Semiconductor device element formed on SOI substrate comprising a h...

Semiconductor device supplying charging current to element to be ch...

Semiconductor device

Semiconductor device supplying charging current to element to be ch...

Semiconductor device internally having insulated gate bipolar trans...

Semiconductor device

Semiconductor device internally having insulated gate bipolar trans...

Semiconductor device with a plurality of isolated conductive films

Semiconductor device with a high breakdown voltage device

Structure of a high breakdown voltage element for use in high power...

Semiconductor device provided with floating electrode

Semiconductor device

Semiconductor device

Semiconductor device

Semiconductor device

Integrated semiconductor device and method of manufacturing thereof

Structure of a high breakdown voltage element for use in high power...

Integrated semiconductor device and method of manufacturing thereof

Semiconductor device and driving circuit for semiconductor device

Semiconductor device with structure for improving breakdown voltage

Semiconductor device

Semiconductor device with region that changes depth across the dire...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE, POWER CONVERSION DEVICE, AND METHOD OF MANUFA...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE, POWER CONVERSION DEVICE, AND METHOD OF MANUFA...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME

SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR MANUFAC...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE SUPPLYING CHARGING CURRENT TO ELEMENT TO BE CH...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE INTERNALLY HAVING INSULATED GATE BIPOLAR TRANS...

SEMICONDUCTOR DEVICE INTERNALLY HAVING INSULATED GATE BIPOLAR TRANS...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE WITH A PLURALITY OF ISOLATED CONDUCTIVE FILMS

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE SUPPLYING CHARGING CURRENT TO ELEMENT TO BE CH...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE PROVIDED WITH FLOATING ELECTRODE

SEMICONDUCTOR DEVICE

Integrated semiconductor device and method of manufacturing thereof

SEMICONDUCTOR DEVICE

Semiconductor device

Semiconductor device

Semiconductor device with structure for improving breakdown voltage

Semiconductor device and driving circuit for semiconductor device

Semiconductor device with structure for improving breakdown voltage