Tomohisa Mizuno

Person

Kanagawa-ken, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Field effect transistor
- Patent number 7,659,537
- Issue date Feb 9, 2010
- Kabushiki Kaisha Toshiba
- Tsutomu Tezuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor
- Patent number 7,009,200
- Issue date Mar 7, 2006
- Kabushiki Kaisha Toshiba
- Tsutomu Tezuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing substrate
- Patent number 6,917,096
- Issue date Jul 12, 2005
- Kabushiki Kaisha Toshiba
- Naoharu Sugiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 6,774,390
- Issue date Aug 10, 2004
- Kabushiki Kaisha Toshiba
- Naoharu Sugiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 6,709,909
- Issue date Mar 23, 2004
- Kabushiki Kaisha Toshiba
- Tomohisa Mizuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a substrate using an SiGe layer
- Patent number 6,607,948
- Issue date Aug 19, 2003
- Kabushiki Kaisha Toshiba
- Naoharu Sugiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 6,583,437
- Issue date Jun 24, 2003
- Kabushiki Kaisha Toshiba
- Tomohisa Mizuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 6,509,587
- Issue date Jan 21, 2003
- Kabushiki Kaisha Toshiba
- Naoharu Sugiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods for producing semiconductor devices
- Patent number 6,326,667
- Issue date Dec 4, 2001
- Kabushiki Kaisha Toshiba
- Naoharu Sugiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a projecting element region
- Patent number 5,844,278
- Issue date Dec 1, 1998
- Kabushiki Kaisha Toshiba
- Tomohisa Mizuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method therefor
- Patent number 5,734,181
- Issue date Mar 31, 1998
- Kabushiki Kaisha Toshiba
- Ryuji Ohba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS field effect transistor and method for manufacturing the same
- Patent number 5,698,883
- Issue date Dec 16, 1997
- Kabushiki Kaisha Toshiba
- Tomohisa Mizuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 5,696,401
- Issue date Dec 9, 1997
- Kabushiki Kaisha Toshiba
- Tomohisa Mizuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with an offset gate structure
- Patent number 5,430,313
- Issue date Jul 4, 1995
- Kabushiki Kaisha Toshiba
- Jumpei Kumagai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with an offset gate structure
- Patent number 5,302,845
- Issue date Apr 12, 1994
- Kabushiki Kaisha Toshiba
- Jumpei Kumagai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 5,302,844
- Issue date Apr 12, 1994
- Kabushiki Kaisha Toshiba
- Tomohisa Mizuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
BiCMOS device with low bandgap CMOS contact regions and low bandgap...
- Patent number 5,216,271
- Issue date Jun 1, 1993
- Kabushiki Kaisha Toshiba
- Shinichi Takagi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with improved current drivability
- Patent number 5,185,646
- Issue date Feb 9, 1993
- Kabushiki Kaisha Toshiba
- Tomohisa Mizuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS semiconductor device having LDD structure
- Patent number 5,119,152
- Issue date Jun 2, 1992
- Kabushiki Kaisha Toshiba
- Tomohisa Mizuno
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Field effect transistor and a method for manufacturing the same
- Publication number 20070187669
- Publication date Aug 16, 2007
- Kabushiki Kaisha Toshiba
- Tsutomu Tezuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field effect transistor
- Publication number 20060118776
- Publication date Jun 8, 2006
- Kabushiki Kaisha Toshiba
- Tsutomu Tezuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field effect transistor and a method for manufacturing the same
- Publication number 20050194585
- Publication date Sep 8, 2005
- Kabushiki Kaisha Toshiba
- Tsutomu Tezuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field effect transistor
- Publication number 20040155256
- Publication date Aug 12, 2004
- Tsutomu Tezuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing substrate
- Publication number 20040070051
- Publication date Apr 15, 2004
- Kabushiki Kaisha Toshiba
- Naoharu Sugiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20030227036
- Publication date Dec 11, 2003
- Naoharu Sugiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20030193060
- Publication date Oct 16, 2003
- Kabushiki Kaisha Toshiba
- Tomohisa Mizuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of producing the same
- Publication number 20020038898
- Publication date Apr 4, 2002
- KABUSHIKI KAISHA TOSHIBA
- Naoharu Sugiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20010048119
- Publication date Dec 6, 2001
- KABUSHIKI KAISHA TOSHIBA
- Tomohisa Mizuno
- H01 - BASIC ELECTRIC ELEMENTS

Tomohisa Mizuno

Person

Patents Grantslast 30 patents

Field effect transistor

Field effect transistor

Semiconductor device and method of manufacturing substrate

Semiconductor device

Semiconductor device and method of manufacturing the same

Method of manufacturing a substrate using an SiGe layer

Semiconductor device and method of manufacturing the same

Semiconductor device

Semiconductor devices and methods for producing semiconductor devices

Semiconductor device having a projecting element region

Semiconductor device and manufacturing method therefor

MOS field effect transistor and method for manufacturing the same

Semiconductor device and method of fabricating the same

Transistor with an offset gate structure

Transistor with an offset gate structure

Semiconductor device and method for manufacturing the same

BiCMOS device with low bandgap CMOS contact regions and low bandgap...

Semiconductor device with improved current drivability

MOS semiconductor device having LDD structure

Patents Applicationslast 30 patents

Field effect transistor and a method for manufacturing the same

Field effect transistor

Field effect transistor and a method for manufacturing the same

Field effect transistor

Semiconductor device and method of manufacturing substrate

Semiconductor device

Semiconductor device and method of manufacturing the same

Semiconductor device and method of producing the same

Semiconductor device and method of manufacturing the same