Toru Tatsumi

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Methods for manufacturing dielectric films
- Patent number 8,524,617
- Issue date Sep 3, 2013
- Canon Anelva Corporation
- Takashi Nakagawa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 8,415,753
- Issue date Apr 9, 2013
- Canon Anelva Corporation
- Takashi Nakagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing hafnium-containing and silicon-containing m...
- Patent number 8,288,234
- Issue date Oct 16, 2012
- Canon Anelva Corporation
- Takuya Seino
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
SiGe photodiode
- Patent number 8,269,303
- Issue date Sep 18, 2012
- NEC Corporation
- Junichi Fujikata
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Dielectric, capacitor using dielectric, semiconductor device using...
- Patent number 8,203,176
- Issue date Jun 19, 2012
- Renesas Electronics Corporation
- Takashi Nakagawa
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Grant
Dielectric film with hafnium aluminum oxynitride film
- Patent number 8,178,934
- Issue date May 15, 2012
- Canon Anelva Corporation
- Naomu Kitano
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Dielectric film and semiconductor device using dielectric film incl...
- Patent number 8,053,311
- Issue date Nov 8, 2011
- Canon Anelva Corporation
- Takashi Nakagawa
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Grant
Dielectric film and semiconductor device using dielectric film incl...
- Patent number 8,030,694
- Issue date Oct 4, 2011
- Canon Anelva Corporation
- Takashi Nakagawa
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Grant
Formation method of metallic compound layer, manufacturing method o...
- Patent number 7,968,463
- Issue date Jun 28, 2011
- Renesas Electronics Corporation
- Takashi Nakagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing dielectric film that has hafnium-containing...
- Patent number 7,867,847
- Issue date Jan 11, 2011
- Canon Anelva Corporation
- Naomu Kitano
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device and method for manufacturing same
- Patent number 7,701,018
- Issue date Apr 20, 2010
- NEC Corporation
- Shigeharu Yamagami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, production method and production device thereof
- Patent number 7,679,148
- Issue date Mar 16, 2010
- NEC Corporation
- Heiji Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a conductive portion below an interlaye...
- Patent number 7,612,416
- Issue date Nov 3, 2009
- NEC Corporation
- Kiyoshi Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with silicide-containing gate electrode and me...
- Patent number 7,592,674
- Issue date Sep 22, 2009
- NEC Corporation
- Kensuke Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a mis-type fet, and methods for manufac...
- Patent number 7,476,916
- Issue date Jan 13, 2009
- NEC Corporation
- Toru Tatsumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing a semiconductor device
- Patent number 6,790,741
- Issue date Sep 14, 2004
- NEC Corporation
- Toru Tatsumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal oxide dielectric film
- Patent number 6,573,211
- Issue date Jun 3, 2003
- NEC Corporation
- Toru Tatsumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a MIS transistor
- Patent number 6,459,126
- Issue date Oct 1, 2002
- NEC Corporation
- Tohru Mogami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulating film comprising amorphous carbon fluoride, a semiconduct...
- Patent number 6,372,628
- Issue date Apr 16, 2002
- NEC Corporation
- Yoshihisa Matsubara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor manufacturing method
- Patent number 6,180,531
- Issue date Jan 30, 2001
- NEC Corporation
- Yoshishige Matsumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device capable of flattening...
- Patent number 6,121,120
- Issue date Sep 19, 2000
- NEC Corporation
- Hitoshi Wakabayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulating film comprising amorphous carbon fluoride, a semiconduct...
- Patent number 6,091,081
- Issue date Jul 18, 2000
- NEC Corporation
- Yoshihisa Matsubara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method for depositing a film on a substrate by chemic...
- Patent number 6,077,355
- Issue date Jun 20, 2000
- NEC Corporation
- Atsushi Yamashita
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Monocrystalline semiconductor photodetector
- Patent number 6,075,253
- Issue date Jun 13, 2000
- NEC Corporation
- Mitsuhiro Sugiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming amorphous carbon thin film by plasma chemical va...
- Patent number 6,071,797
- Issue date Jun 6, 2000
- NEC Corporation
- Kazuhiko Endo
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Vapor phase growth method
- Patent number 6,060,391
- Issue date May 9, 2000
- NEC Corporation
- Toru Tatsumi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for manufacturing a semiconductor device having contact plug...
- Patent number 6,030,894
- Issue date Feb 29, 2000
- NEC Corporation
- Hiromitsu Hada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for fabricating semiconductor device having semiconductor l...
- Patent number 5,946,570
- Issue date Aug 31, 1999
- NEC Corporation
- Naoki Kasai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having contact plug and method for manufacturi...
- Patent number 5,909,059
- Issue date Jun 1, 1999
- NEC Corporation
- Hiromitsu Hada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication process thereof
- Patent number 5,895,948
- Issue date Apr 20, 1999
- NEC Corporation
- Hidemitsu Mori
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20120199919
- Publication date Aug 9, 2012
- Canon ANELVA Corporation
- Takashi Nakagawa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20120043617
- Publication date Feb 23, 2012
- Canon ANELVA Corporation
- Takashi Nakagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR MANUFACTURING DIELECTRIC FILMS
- Publication number 20120021612
- Publication date Jan 26, 2012
- Canon ANELVA Corporation
- Takashi Nakagawa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
DIELECTRIC FILM WITH METALLIC OXYNITRIDE
- Publication number 20110064642
- Publication date Mar 17, 2011
- Canon ANELVA Corporation
- Naomu Kitano
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
DIELECTRIC FILM, METHOD OF MANUFACUTRING SEMICONDUCTOR DEVICE USING...
- Publication number 20110027979
- Publication date Feb 3, 2011
- Canon ANELVA Corporation
- Takuya Seino
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SiGe PHOTODIODE
- Publication number 20110012221
- Publication date Jan 20, 2011
- Junichi Fujikata
- G02 - OPTICS
Information Patent Application
DIELECTRIC FILM AND SEMICONDUCTOR DEVICE USING DIELECTRIC FILM
- Publication number 20100330813
- Publication date Dec 30, 2010
- Canon ANELVA Corporation
- Takashi Nakagawa
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Application
DIELECTRIC, CAPACITOR USING DIELECTRIC, SEMICONDUCTOR DEVICE USING...
- Publication number 20100320520
- Publication date Dec 23, 2010
- Takashi Nakagawa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
DIELECTRIC FILM AND SEMICONDUCTOR DEVICE USING DIELECTRIC FILM
- Publication number 20100244192
- Publication date Sep 30, 2010
- Canon ANELVA Corporation
- Takashi Nakagawa
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Application
METHOD OF MANUFACTURING DIELECTRIC FILM
- Publication number 20100221885
- Publication date Sep 2, 2010
- Canon ANELVA Corporation
- Naomu Kitano
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Semiconductor device manufacturing method and semiconductor device
- Publication number 20100084713
- Publication date Apr 8, 2010
- NEC Corporation
- Takashi Nakagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Formation method of metallic compound layer, manufacturing method o...
- Publication number 20090170252
- Publication date Jul 2, 2009
- Takashi Nakagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method for Manufacturing Same
- Publication number 20080251849
- Publication date Oct 16, 2008
- Shigeharu Yamagami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having fin-type effect transistor
- Publication number 20070187682
- Publication date Aug 16, 2007
- NEC Corporation
- Kiyoshi Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of fabricating the same
- Publication number 20070138580
- Publication date Jun 21, 2007
- NEC Corporation
- Kensuke Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for producing the same
- Publication number 20070132009
- Publication date Jun 14, 2007
- Kiyoshi Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having a mis-type fet, and methods for manufac...
- Publication number 20070096104
- Publication date May 3, 2007
- NEC Corporation
- Toru Tatsumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and manufacturing process therefor
- Publication number 20070075372
- Publication date Apr 5, 2007
- NEC Corporation
- Koichi Terashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device, production method and production device thereof
- Publication number 20050233526
- Publication date Oct 20, 2005
- Heiji Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming thin film and appatus for forming thin film
- Publication number 20030170388
- Publication date Sep 11, 2003
- Hiroshi Shinriki
- C30 - CRYSTAL GROWTH
Information Patent Application
Semiconductor device including a MIS transistor
- Publication number 20020096721
- Publication date Jul 25, 2002
- NEC Corporation
- Tohru Mogami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal oxide dielectric film
- Publication number 20020025453
- Publication date Feb 28, 2002
- NEC Corporation
- Toru Tatsumi
- H01 - BASIC ELECTRIC ELEMENTS

Toru Tatsumi

Person

Patents Grantslast 30 patents

Methods for manufacturing dielectric films

Semiconductor device and method of manufacturing the same

Method of manufacturing hafnium-containing and silicon-containing m...

SiGe photodiode

Dielectric, capacitor using dielectric, semiconductor device using...

Dielectric film with hafnium aluminum oxynitride film

Dielectric film and semiconductor device using dielectric film incl...

Dielectric film and semiconductor device using dielectric film incl...

Formation method of metallic compound layer, manufacturing method o...

Method of manufacturing dielectric film that has hafnium-containing...

Semiconductor device and method for manufacturing same

Semiconductor device, production method and production device thereof

Semiconductor device having a conductive portion below an interlaye...

Semiconductor device with silicide-containing gate electrode and me...

Semiconductor device having a mis-type fet, and methods for manufac...

Process for producing a semiconductor device

Metal oxide dielectric film

Semiconductor device including a MIS transistor

Insulating film comprising amorphous carbon fluoride, a semiconduct...

Semiconductor manufacturing method

Method for manufacturing semiconductor device capable of flattening...

Insulating film comprising amorphous carbon fluoride, a semiconduct...

Apparatus and method for depositing a film on a substrate by chemic...

Monocrystalline semiconductor photodetector

Method for forming amorphous carbon thin film by plasma chemical va...

Vapor phase growth method

Method for manufacturing a semiconductor device having contact plug...

Process for fabricating semiconductor device having semiconductor l...

Semiconductor device having contact plug and method for manufacturi...

Semiconductor device and fabrication process thereof

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

METHODS FOR MANUFACTURING DIELECTRIC FILMS

DIELECTRIC FILM WITH METALLIC OXYNITRIDE

DIELECTRIC FILM, METHOD OF MANUFACUTRING SEMICONDUCTOR DEVICE USING...

SiGe PHOTODIODE

DIELECTRIC FILM AND SEMICONDUCTOR DEVICE USING DIELECTRIC FILM

DIELECTRIC, CAPACITOR USING DIELECTRIC, SEMICONDUCTOR DEVICE USING...

DIELECTRIC FILM AND SEMICONDUCTOR DEVICE USING DIELECTRIC FILM

METHOD OF MANUFACTURING DIELECTRIC FILM

Semiconductor device manufacturing method and semiconductor device

Formation method of metallic compound layer, manufacturing method o...

Semiconductor Device and Method for Manufacturing Same

Semiconductor device having fin-type effect transistor

Semiconductor device and method of fabricating the same

Semiconductor device and method for producing the same

Semiconductor device having a mis-type fet, and methods for manufac...

Semiconductor device and manufacturing process therefor

Semiconductor device, production method and production device thereof

Method for forming thin film and appatus for forming thin film

Semiconductor device including a MIS transistor

Metal oxide dielectric film