Toshio Sakakibara

Person

Nishio-city, JP

People

Patents Grantslast 30 patents

Information Patent Grant
SIC semiconductor device and method for manufacturing the same
- Patent number 7,855,384
- Issue date Dec 21, 2010
- Denso Corporation
- Tsuyoshi Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device
- Patent number 7,763,893
- Issue date Jul 27, 2010
- Denso Corporation
- Eiichi Okuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 7,663,181
- Issue date Feb 16, 2010
- Hitachi, Ltd.
- Takasumi Ohyanagi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device
- Patent number 7,470,930
- Issue date Dec 30, 2008
- Denso Corporation
- Eiichi Okuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a vertical field effect transistor,...
- Patent number 7,307,313
- Issue date Dec 11, 2007
- Hitachi, Ltd.
- Takasumi Ohyanagi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power MOS transistor for absorbing surge current
- Patent number 6,831,331
- Issue date Dec 14, 2004
- Denso Corporation
- Yasuhiro Kitamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of etching metallic thin film on thin film resistor
- Patent number 6,809,034
- Issue date Oct 26, 2004
- Denso Corporation
- Ichiro Ito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of etching metallic thin film on thin film resistor
- Patent number 6,770,564
- Issue date Aug 3, 2004
- Denso Corporation
- Ichiro Ito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device having trench filled u...
- Patent number 6,696,323
- Issue date Feb 24, 2004
- Denso Corporation
- Hitoshi Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having trench filled up with gate electrode
- Patent number 6,525,375
- Issue date Feb 25, 2003
- Denso Corporation
- Hitoshi Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor substrate having an epitaxia...
- Patent number 6,495,294
- Issue date Dec 17, 2002
- Denso Corporation
- Shoichi Yamauchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of improving epitaxially-filled trench by smoothing trench p...
- Patent number 6,406,982
- Issue date Jun 18, 2002
- Denso Corporation
- Yasushi Urakami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor apparatus having high withstand voltage
- Patent number 6,150,697
- Issue date Nov 21, 2000
- Denso Corporation
- Akihiko Teshigahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Design for a semiconductor device having elements isolated by insul...
- Patent number 6,104,078
- Issue date Aug 15, 2000
- Denso Corporation
- Makio Iida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High withstand voltage type semiconductor device having an isolatio...
- Patent number 5,644,157
- Issue date Jul 1, 1997
- Nippondenso Co., Ltd.
- Makio Iida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI semiconductor device and method of producing same wherein warpa...
- Patent number 5,599,722
- Issue date Feb 4, 1997
- Nippondenso Co., Ltd.
- Takayuki Sugisaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric isolated type semiconductor device provided with bipolar...
- Patent number 5,592,015
- Issue date Jan 7, 1997
- Nippondenso Co., Ltd.
- Makio Iida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric isolated type semiconductor device
- Patent number 5,557,134
- Issue date Sep 17, 1996
- Nippondenso Co., Ltd.
- Takayuki Sugisaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabrication of semiconductor device
- Patent number 5,480,832
- Issue date Jan 2, 1996
- Nippondenso Co., Ltd.
- Shoji Miura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device provided with isolation region
- Patent number 5,449,946
- Issue date Sep 12, 1995
- Nippondenso Co., Ltd.
- Toshio Sakakibara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with gradually varying doping levels to compen...
- Patent number 5,072,277
- Issue date Dec 10, 1991
- Nippondenso Co., Ltd.
- Toshio Sakakibara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a nonvolatile semiconductor memory apparatus with...
- Patent number 5,017,505
- Issue date May 21, 1991
- Nippondenso Co., Ltd.
- Tetsuo Fujii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile semiconductor memory device
- Patent number 4,774,556
- Issue date Sep 27, 1988
- Nippondenso Co., Ltd.
- Tetsuo Fujii
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Silicon carbide semiconductor device
- Publication number 20080128711
- Publication date Jun 5, 2008
- DENSO CORPORATION
- Eiichi Okuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC semiconductor device and method for manufacturing the same
- Publication number 20070241338
- Publication date Oct 18, 2007
- DENSO CORPORATION
- Tsuyoshi Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon carbide semiconductor device
- Publication number 20060231841
- Publication date Oct 19, 2006
- DENSO CORPORATION
- Eiichi Okuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20060076613
- Publication date Apr 13, 2006
- Takasumi Ohyanagi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20060071217
- Publication date Apr 6, 2006
- Takasumi Ohyanagi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for manufacturing semiconductor device using two orientation...
- Publication number 20030164534
- Publication date Sep 4, 2003
- Yasushi Urakami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing semiconductor device having trench filled u...
- Publication number 20030141514
- Publication date Jul 31, 2003
- Hitoshi Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of etching metallic thin film on thin film resistor
- Publication number 20020115299
- Publication date Aug 22, 2002
- Ichiro Ito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and manufacturing method thereof
- Publication number 20020017697
- Publication date Feb 14, 2002
- DENSO Corporation
- Yasuhiro Kitamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Manufacturing method of semiconductor substrate
- Publication number 20010049182
- Publication date Dec 6, 2001
- Yasushi Urakami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor substrate and method for manufacturing semiconductor...
- Publication number 20010048142
- Publication date Dec 6, 2001
- Yasushi Urakami
- H01 - BASIC ELECTRIC ELEMENTS

Toshio Sakakibara

Person

Patents Grantslast 30 patents

SIC semiconductor device and method for manufacturing the same

Silicon carbide semiconductor device

Semiconductor device

Silicon carbide semiconductor device

Semiconductor device including a vertical field effect transistor,...

Power MOS transistor for absorbing surge current

Method of etching metallic thin film on thin film resistor

Method of etching metallic thin film on thin film resistor

Method of manufacturing semiconductor device having trench filled u...

Semiconductor device having trench filled up with gate electrode

Method for manufacturing semiconductor substrate having an epitaxia...

Method of improving epitaxially-filled trench by smoothing trench p...

Semiconductor apparatus having high withstand voltage

Design for a semiconductor device having elements isolated by insul...

High withstand voltage type semiconductor device having an isolatio...

SOI semiconductor device and method of producing same wherein warpa...

Dielectric isolated type semiconductor device provided with bipolar...

Dielectric isolated type semiconductor device

Method for fabrication of semiconductor device

Semiconductor device provided with isolation region

Semiconductor device with gradually varying doping levels to compen...

Method of making a nonvolatile semiconductor memory apparatus with...

Non-volatile semiconductor memory device

Patents Applicationslast 30 patents

Silicon carbide semiconductor device

SIC semiconductor device and method for manufacturing the same

Silicon carbide semiconductor device

Semiconductor device

Semiconductor device

Method for manufacturing semiconductor device using two orientation...

Method of manufacturing semiconductor device having trench filled u...

Method of etching metallic thin film on thin film resistor

Semiconductor device and manufacturing method thereof

Manufacturing method of semiconductor substrate

Semiconductor substrate and method for manufacturing semiconductor...