Toshiyuki OISHI

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Transistor having nitride semiconductor used therein and method for...
- Patent number 9,570,599
- Issue date Feb 14, 2017
- Mitsubishi Electric Corporation
- Yutaro Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor characteristic calculation apparatus using large signal...
- Patent number 9,111,061
- Issue date Aug 18, 2015
- Mitsubishi Electric Corporation
- Hiroshi Otsuka
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
High electron mobility transistors with multiple channels
- Patent number 8,624,667
- Issue date Jan 7, 2014
- Mitsubishi Electric Research Laboratories, Inc.
- Koon Hoo Teo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 8,247,844
- Issue date Aug 21, 2012
- Mitsubishi Electric Corporation
- Toshiyuki Oishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor heterojunction field effect transistor having...
- Patent number 8,035,130
- Issue date Oct 11, 2011
- Mitsubishi Electric Corporation
- Takuma Nanjo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device including an electrode in ohmic contac...
- Patent number 7,939,943
- Issue date May 10, 2011
- Mitsubishi Electric Corporation
- Katsuomi Shiozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device and method of manufacturing the same
- Patent number 7,842,962
- Issue date Nov 30, 2010
- Mitsubishi Denki Kabushiki Kaisha
- Katsuomi Shiozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device and manufacturing method of the same
- Patent number 7,791,097
- Issue date Sep 7, 2010
- Mitsubishi Electric Corporation
- Kyozo Kanamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device and method of manufacturing the same
- Patent number 7,714,439
- Issue date May 11, 2010
- Mitsubishi Electric Corporation
- Katsuomi Shiozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device including gallium-nitr...
- Patent number 7,678,597
- Issue date Mar 16, 2010
- Mitsubishi Electric Corporation
- Kenichi Ohtsuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing nitride semiconductor device
- Patent number 7,378,351
- Issue date May 27, 2008
- Mitsubishi Denki Kabushiki Kaisha
- Katsuomi Shiozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 6,635,938
- Issue date Oct 21, 2003
- Mitsubishi Denki Kabushiki Kaisha
- Takumi Nakahata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 6,633,070
- Issue date Oct 14, 2003
- Mitsubishi Denki Kabushiki Kaisha
- Naruhisa Miura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making field effect transistor in which the increase of p...
- Patent number 6,624,034
- Issue date Sep 23, 2003
- Mitsubishi Denki Kabushiki Kaisha
- Yuji Abe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with sidewall spacers and elevated source/drai...
- Patent number 6,617,654
- Issue date Sep 9, 2003
- Mitsubishi Denki Kabushiki Kaisha
- Toshiyuki Oishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 6,600,195
- Issue date Jul 29, 2003
- Mitsubishi Denki Kabushiki Kaisha
- Yukio Nishida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 6,566,734
- Issue date May 20, 2003
- Mitsubishi Denki Kabushiki Kaisha
- Kohei Sugihara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 6,518,635
- Issue date Feb 11, 2003
- Mitsubishi Denki Kabushiki Kaisha
- Katsuomi Shiozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 6,506,651
- Issue date Jan 14, 2003
- Mitsubishi Denki Kabushiki Kaisha
- Hirokazu Sayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 6,344,388
- Issue date Feb 5, 2002
- Mitsubishi Denki Kabushiki Kaisha
- Toshiyuki Oishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device manufacturing method
- Patent number 6,335,252
- Issue date Jan 1, 2002
- Mitsubishi Denki Kabushiki Kaisha
- Toshiyuki Oishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising trench isolation insulator film and...
- Patent number 6,245,641
- Issue date Jun 12, 2001
- Mitsubishi Denki Kabushiki Kaisha
- Katsuomi Shiozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film forming apparatus using laser
- Patent number 6,110,291
- Issue date Aug 29, 2000
- Mitsubishi Denki Kabushiki Kaisha
- Kenyu Haruta
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device including trench isolation structure and a met...
- Patent number 6,081,662
- Issue date Jun 27, 2000
- Mitsubishi Denki Kabushiki Kaisha
- Takaaki Murakami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film forming apparatus using laser
- Patent number 5,622,567
- Issue date Apr 22, 1997
- Mitsubishi Denki Kabushiki Kaisha
- Kazuyoshi Kojima
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor laser device
- Patent number 5,020,072
- Issue date May 28, 1991
- Mitsubishi Denki Kabushiki Kaisha
- Yuji Abe
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TRANSISTOR HAVING NITRIDE SEMICONDUCTOR USED THEREIN AND METHOD FOR...
- Publication number 20150249150
- Publication date Sep 3, 2015
- Mitsubishi Electric Corporation
- Yutaro Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FET CHIP
- Publication number 20150035066
- Publication date Feb 5, 2015
- Mitsubishi Electric Corporation
- Hiroshi Otsuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR CHARACTERISTIC CALCULATION APPARATUS USING LARGE SIGNAL...
- Publication number 20140019096
- Publication date Jan 16, 2014
- Hiroshi OTSUKA
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20130175544
- Publication date Jul 11, 2013
- Mitsubishi Electric Corporation
- Toshiyuki Oishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Electron Mobility Transistors with Multiple Channels
- Publication number 20130141156
- Publication date Jun 6, 2013
- Koon Hoo Teo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20130020584
- Publication date Jan 24, 2013
- MITSUBISHI ELECTRIC CORPORATION
- Toshiyuki Oishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
- Publication number 20110316047
- Publication date Dec 29, 2011
- MITSUBISHI ELECTRIC CORPORATION
- Takuma NANJO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20100244041
- Publication date Sep 30, 2010
- MITSUBISHI ELECTRIC CORPORATION
- Toshiyuki OISHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20090170304
- Publication date Jul 2, 2009
- Mitsubishi Electric Corporation
- Yoichiro Tarui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20090160054
- Publication date Jun 25, 2009
- Mitsubishi Electric Corporation
- Katsuomi Shiozawa
- B82 - NANO-TECHNOLOGY
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20090140389
- Publication date Jun 4, 2009
- Mitsubishi Electric Corporation
- Katsuomi Shiozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20090142871
- Publication date Jun 4, 2009
- Mitsubishi Electric Corporation
- Kenichi Ohtsuka
- B82 - NANO-TECHNOLOGY
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20090127661
- Publication date May 21, 2009
- Mitsubishi Electric Corporation
- Katsuomi Shiozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
- Publication number 20080237639
- Publication date Oct 2, 2008
- Mitsubishi Electric Corporation
- Takuma NANJO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20080116575
- Publication date May 22, 2008
- MITSUBISHI ELECTRIC CORPORATION
- Katsuomi Shiozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
- Publication number 20080023799
- Publication date Jan 31, 2008
- MITSUBISHI ELECTRIC CORPORATION
- Kyozo KANAMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitride semiconductor device and method of manufacturing the same
- Publication number 20060108596
- Publication date May 25, 2006
- Mitsubishi Denki Kabushiki Kaisha
- Katsuomi Shiozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing nitride semiconductor device
- Publication number 20060003490
- Publication date Jan 5, 2006
- Mitsubishi Denki Kabushiki Kaisha
- Katsuomi Shiozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device
- Publication number 20020163036
- Publication date Nov 7, 2002
- Mitsubishi Denki Kabushiki Kaisha
- Naruhisa Miura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of making field effect transistor
- Publication number 20020158292
- Publication date Oct 31, 2002
- Mitsubishi Denki Kabushiki Kaisha
- Yuji Abe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and manufacturing method thereof
- Publication number 20020047163
- Publication date Apr 25, 2002
- Mitsubishi Denki Kabushiki Kaisha
- Hirokazu Sayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and manufacturing method thereof
- Publication number 20020045317
- Publication date Apr 18, 2002
- Mitsubishi Denki Kabushiki Kaisha
- Toshiyuki Oishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of producing the same
- Publication number 20020037619
- Publication date Mar 28, 2002
- Kohei Sugihara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and production method thereof
- Publication number 20020011635
- Publication date Jan 31, 2002
- Yuji Abe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SECICONDUCTOR DEVICE
- Publication number 20020006706
- Publication date Jan 17, 2002
- YUKIO NISHIDA
- H01 - BASIC ELECTRIC ELEMENTS

Toshiyuki OISHI

Person

Patents Grantslast 30 patents

Transistor having nitride semiconductor used therein and method for...

Transistor characteristic calculation apparatus using large signal...

High electron mobility transistors with multiple channels

Semiconductor device and manufacturing method thereof

Nitride semiconductor heterojunction field effect transistor having...

Nitride semiconductor device including an electrode in ohmic contac...

Nitride semiconductor device and method of manufacturing the same

Nitride semiconductor device and manufacturing method of the same

Nitride semiconductor device and method of manufacturing the same

Method of manufacturing semiconductor device including gallium-nitr...

Method of manufacturing nitride semiconductor device

Semiconductor device and manufacturing method thereof

Semiconductor device

Method of making field effect transistor in which the increase of p...

Semiconductor device with sidewall spacers and elevated source/drai...

Semiconductor device

Semiconductor device

Semiconductor device and manufacturing method thereof

Semiconductor device and manufacturing method thereof

Method of manufacturing semiconductor device

Semiconductor device manufacturing method

Semiconductor device comprising trench isolation insulator film and...

Thin film forming apparatus using laser

Semiconductor device including trench isolation structure and a met...

Thin film forming apparatus using laser

Semiconductor laser device

Patents Applicationslast 30 patents

TRANSISTOR HAVING NITRIDE SEMICONDUCTOR USED THEREIN AND METHOD FOR...

FET CHIP

TRANSISTOR CHARACTERISTIC CALCULATION APPARATUS USING LARGE SIGNAL...

SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

High Electron Mobility Transistors with Multiple Channels

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

Nitride semiconductor device and method of manufacturing the same

Method of manufacturing nitride semiconductor device

Semiconductor Device

Method of making field effect transistor

Semiconductor device and manufacturing method thereof

Semiconductor device and manufacturing method thereof

Semiconductor device and method of producing the same

Semiconductor device and production method thereof

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SECICONDUCTOR DEVICE