Vignesh Sundar

Person

Sunnyvale, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Multilayer structure for reducing film roughness in magnetic devices
- Patent number 12,356,865
- Issue date Jul 8, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jian Zhu
- G11 - INFORMATION STORAGE
Information Patent Grant
Etching and encapsulation scheme for magnetic tunnel junction fabri...
- Patent number 12,310,245
- Issue date May 20, 2025
- Headway Technologies, Inc.
- Vignesh Sundar
Information Patent Grant
Self-aligned encapsulation hard mask to separate physically under-e...
- Patent number 12,245,516
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
MTJ device performance by adding stress modulation layer to MTJ dev...
- Patent number 12,207,566
- Issue date Jan 21, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jesmin Haq
- G11 - INFORMATION STORAGE
Information Patent Grant
Silicon oxynitride based encapsulation layer for magnetic tunnel ju...
- Patent number 12,185,641
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Vignesh Sundar
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Dual magnetic tunnel junction (DMTJ) stack design
- Patent number 12,082,509
- Issue date Sep 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Vignesh Sundar
- G11 - INFORMATION STORAGE
Information Patent Grant
Free layer structure in magnetic random access memory (MRAM) for Mo...
- Patent number 12,027,191
- Issue date Jul 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hideaki Fukuzawa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Cooling for PMA (perpendicular magnetic anisotropy) enhancement of...
- Patent number 11,956,971
- Issue date Apr 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huanlong Liu
Information Patent Grant
Post treatment to reduce shunting devices for physical etching process
- Patent number 11,903,324
- Issue date Feb 13, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Jen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride capping layer for spin torque transfer (STT) magnetoresisti...
- Patent number 11,849,646
- Issue date Dec 19, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jodi Mari Iwata
- G11 - INFORMATION STORAGE
Information Patent Grant
Self-aligned encapsulation hard mask to separate physically under-e...
- Patent number 11,818,961
- Issue date Nov 14, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
MTJ device performance by adding stress modulation layer to mtj dev...
- Patent number 11,785,864
- Issue date Oct 10, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jesmin Haq
- G11 - INFORMATION STORAGE
Information Patent Grant
Low resistance MgO capping layer for perpendicularly magnetized mag...
- Patent number 11,696,511
- Issue date Jul 4, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sahil Patel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etching and encapsulation scheme for magnetic tunnel junction fabri...
- Patent number 11,631,802
- Issue date Apr 18, 2023
- Headway Technologies, Inc.
- Vignesh Sundar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual magnetic tunnel junction devices for magnetic random access me...
- Patent number 11,495,738
- Issue date Nov 8, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Vignesh Sundar
- G11 - INFORMATION STORAGE
Information Patent Grant
Self-aligned encapsulation hard mask to separate physically under-e...
- Patent number 11,444,241
- Issue date Sep 13, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
MTJ device performance by adding stress modulation layer to MTJ dev...
- Patent number 11,430,945
- Issue date Aug 30, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jesmin Haq
- G11 - INFORMATION STORAGE
Information Patent Grant
Post treatment to reduce shunting devices for physical etching process
- Patent number 11,424,405
- Issue date Aug 23, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Jen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride capping layer for spin torque transfer (STT) magnetoresisti...
- Patent number 11,417,835
- Issue date Aug 16, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jodi Mari Iwata
- G11 - INFORMATION STORAGE
Information Patent Grant
Silicon oxynitride based encapsulation layer for magnetic tunnel ju...
- Patent number 11,411,174
- Issue date Aug 9, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Vignesh Sundar
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Combined physical and chemical etch to reduce magnetic tunnel junct...
- Patent number 11,316,103
- Issue date Apr 26, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Dongna Shen
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Method to integrate MRAM devices to the interconnects of 30nm and b...
- Patent number 11,289,645
- Issue date Mar 29, 2022
- Headway Technologies, Inc.
- Yi Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Free layer structure in magnetic random access memory (MRAM) for Mo...
- Patent number 11,087,810
- Issue date Aug 10, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hideaki Fukuzawa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Ion beam etching process design to minimize sidewall re-deposition
- Patent number 11,043,632
- Issue date Jun 22, 2021
- Headway Technologies, Inc.
- Vignesh Sundar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduce intermixing on MTJ sidewall by oxidation
- Patent number 11,031,548
- Issue date Jun 8, 2021
- Headway Technologies, Inc.
- Dongna Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride diffusion barrier structure for spintronic applications
- Patent number 10,950,782
- Issue date Mar 16, 2021
- Headway Technologies, Inc.
- Santiago Serrano Guisan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned encapsulation hard mask to separate physically under-e...
- Patent number 10,868,237
- Issue date Dec 15, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistance MgO capping layer for perpendicularly magnetized mag...
- Patent number 10,797,232
- Issue date Oct 6, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sahil Patel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual magnetic tunnel junction (DMTJ) stack design
- Patent number 10,797,225
- Issue date Oct 6, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Vignesh Sundar
- G11 - INFORMATION STORAGE
Information Patent Grant
Cooling for PMA (perpendicular magnetic anisotropy) enhancement of...
- Patent number 10,784,310
- Issue date Sep 22, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SELF-ALIGNED ENCAPSULATION HARD MASK TO SEPARATE PHYSICALLY UNDER-E...
- Publication number 20250176438
- Publication date May 29, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MTJ DEVICE PERFORMANCE BY ADDING STRESS MODULATION LAYER TO MTJ DEV...
- Publication number 20250169373
- Publication date May 22, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jesmin Haq
- G11 - INFORMATION STORAGE
Information Patent Application
SELF-ALIGNED ENCAPSULATION HARD MASK TO SEPARATE PHYSICALLY UNDER-E...
- Publication number 20230389435
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi Yang
- G11 - INFORMATION STORAGE
Information Patent Application
MTJ DEVICE PERFORMANCE BY ADDING STRESS MODULATION LAYER TO MTJ DEV...
- Publication number 20230371398
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jesmin Haq
- G11 - INFORMATION STORAGE
Information Patent Application
Etching and Encapsulation Scheme for Magnetic Tunnel Junction Fabri...
- Publication number 20230217834
- Publication date Jul 6, 2023
- HEADWAY TECHNOLOGIES, INC.
- Vignesh Sundar
Information Patent Application
Dual Magnetic Tunnel Junction Devices For Magnetic Random Access Me...
- Publication number 20230060687
- Publication date Mar 2, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Vignesh Sundar
- G11 - INFORMATION STORAGE
Information Patent Application
Nitride Capping Layer For Spin Torque Transfer (STT) Magnetoresisti...
- Publication number 20220384716
- Publication date Dec 1, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jodi Mari Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MTJ Device Performance by Adding Stress Modulation Layer to MTJ Dev...
- Publication number 20220384713
- Publication date Dec 1, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jesmin Haq
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON OXYNITRIDE BASED ENCAPSULATION LAYER FOR MAGNETIC TUNNEL JU...
- Publication number 20220384718
- Publication date Dec 1, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Vignesh Sundar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED ENCAPSULATION HARD MASK TO SEPARATE PHYSICALLY UNDER-E...
- Publication number 20220367793
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi Yang
- G11 - INFORMATION STORAGE
Information Patent Application
Post Treatment to Reduce Shunting Devices for Physical Etching Process
- Publication number 20220359821
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Jen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Novel Free Layer Structure in Magnetic Random Access Memory (MRAM)...
- Publication number 20210375343
- Publication date Dec 2, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hideaki Fukuzawa
- B82 - NANO-TECHNOLOGY
Information Patent Application
Nitride Diffusion Barrier Structure for Spintronic Applications
- Publication number 20210175414
- Publication date Jun 10, 2021
- HEADWAY TECHNOLOGIES, INC.
- Santiago Serrano Guisan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Etching and Encapsulation Scheme for Magnetic Tunnel Junction Fabri...
- Publication number 20210143322
- Publication date May 13, 2021
- HEADWAY TECHNOLOGIES, INC.
- Vignesh Sundar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reduce Intermixing on MTJ Sidewall by Oxidation
- Publication number 20210135097
- Publication date May 6, 2021
- HEADWAY TECHNOLOGIES, INC.
- Dongna Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-Aligned Encapsulation Hard Mask To Separate Physically Under-E...
- Publication number 20210098696
- Publication date Apr 1, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi Yang
- G11 - INFORMATION STORAGE
Information Patent Application
Ion Beam Etching Process Design to Minimize Sidewall Re-Deposition
- Publication number 20210083180
- Publication date Mar 18, 2021
- HEADWAY TECHNOLOGIES, INC.
- Vignesh Sundar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual Magnetic Tunnel Junction (DMTJ) Stack Design
- Publication number 20210020830
- Publication date Jan 21, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Vignesh Sundar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low Resistance MgO Capping Layer for Perpendicularly Magnetized Mag...
- Publication number 20210020831
- Publication date Jan 21, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sahil Patel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Cooling for PMA (Perpendicular Magnetic Anisotropy) Enhancement of...
- Publication number 20210013260
- Publication date Jan 14, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Post Treatment to Reduce Shunting Devices for Physical Etching Process
- Publication number 20200328345
- Publication date Oct 15, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Jen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitride Capping Layer For Spin Torque Transfer (STT) Magnetoresisti...
- Publication number 20200279993
- Publication date Sep 3, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jodi Mari Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitride Diffusion Barrier Structure for Spintronic Applications
- Publication number 20200266334
- Publication date Aug 20, 2020
- HEADWAY TECHNOLOGIES, INC.
- Santiago Serrano Guisan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Novel Free Layer Structure in Magnetic Random Access Memory (MRAM)...
- Publication number 20200243125
- Publication date Jul 30, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hideaki Fukuzawa
- B82 - NANO-TECHNOLOGY
Information Patent Application
Method to Integrate MRAM Devices to the Interconnects of 30nm and B...
- Publication number 20200212297
- Publication date Jul 2, 2020
- HEADWAY TECHNOLOGIES, INC.
- Yi Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Cooling for PMA (Perpendicular Magnetic Anisotropy) Enhancement of...
- Publication number 20200152698
- Publication date May 14, 2020
- HEADWAY TECHNOLOGIES, INC.
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual Magnetic Tunnel Junction Devices for Magnetic Random Access Me...
- Publication number 20200144488
- Publication date May 7, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Vignesh Sundar
- G11 - INFORMATION STORAGE
Information Patent Application
COMBINED PHYSICAL AND CHEMICAL ETCH TO REDUCE MAGNETIC TUNNEL JUNCT...
- Publication number 20200144492
- Publication date May 7, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Dongna Shen
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
Low Resistance MgO Capping Layer for Perpendicularly Magnetized Mag...
- Publication number 20200136025
- Publication date Apr 30, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sahil Patel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Oxynitride Based Encapsulation Layer for Magnetic Tunnel Ju...
- Publication number 20200127192
- Publication date Apr 23, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Vignesh Sundar
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Vignesh Sundar

Person

Patents Grantslast 30 patents

Multilayer structure for reducing film roughness in magnetic devices

Etching and encapsulation scheme for magnetic tunnel junction fabri...

Self-aligned encapsulation hard mask to separate physically under-e...

MTJ device performance by adding stress modulation layer to MTJ dev...

Silicon oxynitride based encapsulation layer for magnetic tunnel ju...

Dual magnetic tunnel junction (DMTJ) stack design

Free layer structure in magnetic random access memory (MRAM) for Mo...

Cooling for PMA (perpendicular magnetic anisotropy) enhancement of...

Post treatment to reduce shunting devices for physical etching process

Nitride capping layer for spin torque transfer (STT) magnetoresisti...

Self-aligned encapsulation hard mask to separate physically under-e...

MTJ device performance by adding stress modulation layer to mtj dev...

Low resistance MgO capping layer for perpendicularly magnetized mag...

Etching and encapsulation scheme for magnetic tunnel junction fabri...

Dual magnetic tunnel junction devices for magnetic random access me...

Self-aligned encapsulation hard mask to separate physically under-e...

MTJ device performance by adding stress modulation layer to MTJ dev...

Post treatment to reduce shunting devices for physical etching process

Nitride capping layer for spin torque transfer (STT) magnetoresisti...

Silicon oxynitride based encapsulation layer for magnetic tunnel ju...

Combined physical and chemical etch to reduce magnetic tunnel junct...

Method to integrate MRAM devices to the interconnects of 30nm and b...

Free layer structure in magnetic random access memory (MRAM) for Mo...

Ion beam etching process design to minimize sidewall re-deposition

Reduce intermixing on MTJ sidewall by oxidation

Nitride diffusion barrier structure for spintronic applications

Self-aligned encapsulation hard mask to separate physically under-e...

Low resistance MgO capping layer for perpendicularly magnetized mag...

Dual magnetic tunnel junction (DMTJ) stack design

Cooling for PMA (perpendicular magnetic anisotropy) enhancement of...

Patents Applicationslast 30 patents

SELF-ALIGNED ENCAPSULATION HARD MASK TO SEPARATE PHYSICALLY UNDER-E...

MTJ DEVICE PERFORMANCE BY ADDING STRESS MODULATION LAYER TO MTJ DEV...

SELF-ALIGNED ENCAPSULATION HARD MASK TO SEPARATE PHYSICALLY UNDER-E...

MTJ DEVICE PERFORMANCE BY ADDING STRESS MODULATION LAYER TO MTJ DEV...

Etching and Encapsulation Scheme for Magnetic Tunnel Junction Fabri...

Dual Magnetic Tunnel Junction Devices For Magnetic Random Access Me...

Nitride Capping Layer For Spin Torque Transfer (STT) Magnetoresisti...

MTJ Device Performance by Adding Stress Modulation Layer to MTJ Dev...

SILICON OXYNITRIDE BASED ENCAPSULATION LAYER FOR MAGNETIC TUNNEL JU...

SELF-ALIGNED ENCAPSULATION HARD MASK TO SEPARATE PHYSICALLY UNDER-E...

Post Treatment to Reduce Shunting Devices for Physical Etching Process

Novel Free Layer Structure in Magnetic Random Access Memory (MRAM)...

Nitride Diffusion Barrier Structure for Spintronic Applications

Etching and Encapsulation Scheme for Magnetic Tunnel Junction Fabri...

Reduce Intermixing on MTJ Sidewall by Oxidation

Self-Aligned Encapsulation Hard Mask To Separate Physically Under-E...

Ion Beam Etching Process Design to Minimize Sidewall Re-Deposition

Dual Magnetic Tunnel Junction (DMTJ) Stack Design

Low Resistance MgO Capping Layer for Perpendicularly Magnetized Mag...

Cooling for PMA (Perpendicular Magnetic Anisotropy) Enhancement of...

Post Treatment to Reduce Shunting Devices for Physical Etching Process

Nitride Capping Layer For Spin Torque Transfer (STT) Magnetoresisti...

Nitride Diffusion Barrier Structure for Spintronic Applications

Novel Free Layer Structure in Magnetic Random Access Memory (MRAM)...

Method to Integrate MRAM Devices to the Interconnects of 30nm and B...

Cooling for PMA (Perpendicular Magnetic Anisotropy) Enhancement of...

Dual Magnetic Tunnel Junction Devices for Magnetic Random Access Me...

COMBINED PHYSICAL AND CHEMICAL ETCH TO REDUCE MAGNETIC TUNNEL JUNCT...

Low Resistance MgO Capping Layer for Perpendicularly Magnetized Mag...

Silicon Oxynitride Based Encapsulation Layer for Magnetic Tunnel Ju...