Wataru Andoh

Person

Kamo-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing insulated gate semiconductor device
- Patent number 7,125,787
- Issue date Oct 24, 2006
- Sanyo Electric Co., LTD
- Nobuyuki Sekikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 6,693,341
- Issue date Feb 17, 2004
- Sanyo Electric Co., LTD
- Nobuyuki Sekikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate semiconductor device and its manufacturing method
- Patent number 6,690,070
- Issue date Feb 10, 2004
- Sanyo Electric Co., LTD
- Nobuyuki Sekikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having capacitance element and method of produ...
- Patent number 6,670,236
- Issue date Dec 30, 2003
- Sanyo Electric Co., LTD
- Nobuyuki Sekikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device and semiconductor device
- Patent number 6,489,661
- Issue date Dec 3, 2002
- Sanyo Electric Co., LTD
- Nobuyuki Sekikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having capacitance element and method of produ...
- Patent number 6,307,251
- Issue date Oct 23, 2001
- Sanyo Electric Co., LTD
- Nobuyuki Sekikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 6,211,046
- Issue date Apr 3, 2001
- Sanyo Electric Co., Ltd.
- Nobuyuki Sekikawa
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method of manufacturing insulated gate semiconductor device
- Publication number 20040113208
- Publication date Jun 17, 2004
- Sanyo Electric Co., Ltd.
- Nobuyuki Sekikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20030062587
- Publication date Apr 3, 2003
- Sanyo Electric Co., Ltd., a Japan Corporation
- Nobuyuki Sekikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having capacitance element and method of produ...
- Publication number 20020041005
- Publication date Apr 11, 2002
- Sanyo Electric Co., Ltd., a Japan Corporation
- Nobuyuki Sekikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Insulated gate semiconductor device and its manufacturing method
- Publication number 20020038895
- Publication date Apr 4, 2002
- Nobuyuki Sekikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing semiconductor device and semiconductor device
- Publication number 20010029093
- Publication date Oct 11, 2001
- Sanyo Electric Co., Ltd., a Japan Corporation
- Nobuyuki Sekikawa
- H01 - BASIC ELECTRIC ELEMENTS

Wataru Andoh

Person

Patents Grantslast 30 patents

Method of manufacturing insulated gate semiconductor device

Semiconductor device

Insulated gate semiconductor device and its manufacturing method

Semiconductor device having capacitance element and method of produ...

Method of manufacturing semiconductor device and semiconductor device

Semiconductor device having capacitance element and method of produ...

Method of manufacturing a semiconductor device

Patents Applicationslast 30 patents

Method of manufacturing insulated gate semiconductor device

Semiconductor device

Semiconductor device having capacitance element and method of produ...

Insulated gate semiconductor device and its manufacturing method

Method of manufacturing semiconductor device and semiconductor device