Werner Goetz

Person

Palo Alto, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Color tunable light emitting diode (LED) systems, LED lighting syst...
- Patent number 11,825,572
- Issue date Nov 21, 2023
- Lumileds LLC
- Wouter Anthon Soer
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Color tunable light emitting diode (LED) systems, LED lighting syst...
- Patent number 10,887,960
- Issue date Jan 5, 2021
- Lumileds LLC
- Wouter Anthon Soer
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Light emitting device with improved extraction efficiency
- Patent number 10,586,891
- Issue date Mar 10, 2020
- Lumileds LLC
- Nathan Fredrick Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting device with improved extraction efficiency
- Patent number 10,217,901
- Issue date Feb 26, 2019
- Lumileds LLC
- Nathan Fredrick Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a composite substrate
- Patent number 9,991,414
- Issue date Jun 5, 2018
- Lumileds LLC
- Nathan Frederick Gardner
- C30 - CRYSTAL GROWTH
Information Patent Grant
Light emitting device with improved extraction efficiency
- Patent number 9,711,687
- Issue date Jul 18, 2017
- Koninklijke Philips N.V.
- Nathan Frederick Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a composite substrate
- Patent number 9,634,181
- Issue date Apr 25, 2017
- Koninklijke Philips N.V.
- Nathan Frederick Gardner
- C30 - CRYSTAL GROWTH
Information Patent Grant
Light emitting device with improved extraction efficiency
- Patent number 9,209,359
- Issue date Dec 8, 2015
- Koninklijke Philips N.V.
- Nathan Frederick Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride light emitting devices grown on templates to reduce strain
- Patent number 7,951,693
- Issue date May 31, 2011
- Philips Lumileds Lighting Company, LLC
- Patrick N. Grillot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-type layer for a III-nitride light emitting device
- Patent number 7,906,357
- Issue date Mar 15, 2011
- Koninklijke Philips Electronics N.V.
- Junko Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride light emitting device with double heterostructure light...
- Patent number 7,880,186
- Issue date Feb 1, 2011
- Koninklijke Phllips Electronics N.V.
- Nathan F. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride light emitting devices grown on templates to reduce strain
- Patent number 7,547,908
- Issue date Jun 16, 2009
- Philips Lumilieds Lighting Co, LLC
- Patrick N. Grillot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride light emitting devices grown on templates to reduce strain
- Patent number 7,534,638
- Issue date May 19, 2009
- Philips Lumiled Lighting Co., LLC
- Patrick N. Grillot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of Ohmic contacts in III-nitride light emitting devices
- Patent number 7,345,323
- Issue date Mar 18, 2008
- Philips Lumileds Lighting Company LLC
- Werner K. Goetz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting diodes with graded composition active regions
- Patent number 7,345,324
- Issue date Mar 18, 2008
- Philips Lumileds Lighting Company LLC
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strain-controlled III-nitride light emitting device
- Patent number 6,989,555
- Issue date Jan 24, 2006
- LumiLeds Lighting U.S., LLC
- Werner K. Goetz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting diodes with graded composition active regions
- Patent number 6,955,933
- Issue date Oct 18, 2005
- LumiLeds Lighting U.S., LLC
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of Ohmic contacts in III-nitride light emitting devices
- Patent number 6,914,272
- Issue date Jul 5, 2005
- LumiLeds Lighting U.S., LLC
- Werner K. Goetz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Growth of III-nitride films on mismatched substrates without conven...
- Patent number 6,900,067
- Issue date May 31, 2005
- LumiLeds Lighting U.S., LLC
- Junko Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of ohmic contacts in III-nitride light emitting devices
- Patent number 6,657,300
- Issue date Dec 2, 2003
- LumiLeds Lighting U.S., LLC
- Werner K. Goetz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Indium gallium nitride smoothing structures for III-nitride devices
- Patent number 6,635,904
- Issue date Oct 21, 2003
- LumiLeds Lighting U.S., LLC
- Werner K. Goetz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-Nitride light emitting devices with low driving voltage
- Patent number 6,630,692
- Issue date Oct 7, 2003
- LumiLeds Lighting U.S., LLC
- Werner Goetz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Increasing the brightness of III-nitride light emitting devices
- Patent number 6,576,932
- Issue date Jun 10, 2003
- LumiLeds Lighting, U.S., LLC
- Reena Khare
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Indium gallium nitride smoothing structures for III-nitride devices
- Patent number 6,489,636
- Issue date Dec 3, 2002
- LumiLeds Lighting U.S., LLC
- Werner K. Goetz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with selectively doped III-V nitride layers
- Patent number 6,441,393
- Issue date Aug 27, 2002
- LumiLeds Lighting U.S., LLC
- Werner Goetz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of strain engineering and impurity control in III-V nitride...
- Patent number 6,274,399
- Issue date Aug 14, 2001
- LumiLeds Lighting, U.S. LLC
- R. Scott Kern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strain engineered and impurity controlled III-V nitride semiconduct...
- Patent number 6,194,742
- Issue date Feb 27, 2001
- LumiLeds Lighting, U.S., LLC
- R. Scott Kern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion-implantation assisted wet chemical etching of III-V nitrides an...
- Patent number 6,090,300
- Issue date Jul 18, 2000
- Xerox Corporation
- Jack Walker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices constructed from crystallites
- Patent number 5,977,612
- Issue date Nov 2, 1999
- Xerox Corporation
- David P. Bour
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
COLOR TUNABLE LIGHT EMITTING DIODE (LED) SYSTEMS, LED LIGHTING SYST...
- Publication number 20210120645
- Publication date Apr 22, 2021
- Lumileds LLC
- Wouter Anthon Soer
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Application
COLOR TUNABLE LIGHT EMITTING DIODE (LED) SYSTEMS, LED LIGHTING SYST...
- Publication number 20200314976
- Publication date Oct 1, 2020
- Lumileds LLC
- Wouter Anthon Soer
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Application
HIGH POWER LED ASSEMBLY AND METHOD OF FORMING A HIGH POWER LED ASSE...
- Publication number 20200313057
- Publication date Oct 1, 2020
- Lumileds LLC
- Walter Daeschner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH POWER LED ASSEMBLY AND METHOD OF FORMING A HIGH POWER LED ASSE...
- Publication number 20200313053
- Publication date Oct 1, 2020
- Lumileds Holding B.V.
- Walter Daeschner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIGHT EMITTING DEVICE WITH IMPROVED EXTRACTION EFFICIENCY
- Publication number 20190259914
- Publication date Aug 22, 2019
- Lumileds LLC
- Nathan Fredrick Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIGHT EMITTING DEVICE WITH IMPROVED EXTRACTION EFFICIENCY
- Publication number 20170317237
- Publication date Nov 2, 2017
- Lumileds LLC
- Nathan Fredrick Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A COMPOSITE SUBSTRATE
- Publication number 20170279006
- Publication date Sep 28, 2017
- Koninklijke Philips N.V.
- Nathan Frederick Gardner
- C30 - CRYSTAL GROWTH
Information Patent Application
Light emitting device with improved extraction efficiency
- Publication number 20160163927
- Publication date Jun 9, 2016
- Koninklijke Philips N.V.
- Nathan Frederick Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIGHT EMITTING DEVICE WITH IMPROVED EXTRACTION EFFICIENCY
- Publication number 20140048817
- Publication date Feb 20, 2014
- Koninklijke Philips Electronics N.V.
- Nathan Frederick Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A COMPOSITE SUBSTRATE
- Publication number 20130244364
- Publication date Sep 19, 2013
- Koninklijke Philips Electronics N.V.
- Nathan Frederick Gardner
- C30 - CRYSTAL GROWTH
Information Patent Application
P-TYPE LAYER FOR A III-NITRIDE LIGHT EMITTING DEVICE
- Publication number 20110121358
- Publication date May 26, 2011
- Koninklijke Philips Electronics N.V.
- JUNKO KOBAYASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride Light Emitting Devices Grown on Templates to Reduce Strain
- Publication number 20080149961
- Publication date Jun 26, 2008
- PHILIPS LUMILEDS LIGHTING COMPANY, LLC
- Patrick N. Grillot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride Light Emitting Devices Grown on Templates to Reduce Strain
- Publication number 20080153191
- Publication date Jun 26, 2008
- PHILIPS LUMILEDS LIGHTING COMPANY, LLC
- Patrick N. Grillot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride Light Emitting Devices Grown on Templates to Reduce Strain
- Publication number 20080153192
- Publication date Jun 26, 2008
- PHILIPS LUMILEDS LIGHTING COMPANY, LLC
- Patrick N. Grillot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-Type Layer For A III-Nitride Light Emitting Device
- Publication number 20070262342
- Publication date Nov 15, 2007
- PHILIPS LUMILEDS LIGHTING COMPANY, LLC
- Junko Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride Light Emitting Device with Double Heterostructure Light...
- Publication number 20070145384
- Publication date Jun 28, 2007
- PHILIPS LUMILEDS LIGHTING COMPANY, LLC
- Nathan F. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strain-controlled III-nitride light emitting device
- Publication number 20060011937
- Publication date Jan 19, 2006
- Werner K. Goetz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Light emitting diodes with graded composition active regions
- Publication number 20050263780
- Publication date Dec 1, 2005
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAIN-CONTROLLED III-NITRIDE LIGHT EMITTING DEVICE
- Publication number 20050236641
- Publication date Oct 27, 2005
- Werner K. Goetz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Formation of Ohmic contacts in III-nitride light emitting devices
- Publication number 20050167693
- Publication date Aug 4, 2005
- Werner K. Goetz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Growth of III-nitride films on mismatched substrates without conven...
- Publication number 20040115853
- Publication date Jun 17, 2004
- Junko Kobayashi
- C30 - CRYSTAL GROWTH
Information Patent Application
Formation of Ohmic contacts in III-nitride light emitting devices
- Publication number 20040075097
- Publication date Apr 22, 2004
- Werner K. Goetz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Increasing the brightness of III-Nitride light emitting devices
- Publication number 20030205717
- Publication date Nov 6, 2003
- Reena Khare
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Light emitting diodes with graded composition active regions
- Publication number 20030020085
- Publication date Jan 30, 2003
- LumiLeds Lighting, U.S., LLC
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride light emitting devices with low driving voltage
- Publication number 20020190259
- Publication date Dec 19, 2002
- Werner Goetz
- C30 - CRYSTAL GROWTH
Information Patent Application
INDIUM GALLIUM NITRIDE SMOOTHING STRUCTURES FOR III-NITRIDE DEVICES
- Publication number 20020171091
- Publication date Nov 21, 2002
- Werner K. Goetz
- B82 - NANO-TECHNOLOGY
Information Patent Application
Indium gallium nitride smoothing structures for III-nitride devices
- Publication number 20020171092
- Publication date Nov 21, 2002
- Werner K. Goetz
- B82 - NANO-TECHNOLOGY
Information Patent Application
Increasing the brightness of III-nitride light emitting devices
- Publication number 20020121646
- Publication date Sep 5, 2002
- Reena Khare
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Formation of ohmic contacts in III-nitride light emitting devices
- Publication number 20020008243
- Publication date Jan 24, 2002
- Werner K. Goetz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH SELECTIVELY DOPED III-V NITRIDE LAYERS
- Publication number 20020008245
- Publication date Jan 24, 2002
- WERNER GOETZ
- H01 - BASIC ELECTRIC ELEMENTS

Werner Goetz

Person

Patents Grantslast 30 patents

Color tunable light emitting diode (LED) systems, LED lighting syst...

Color tunable light emitting diode (LED) systems, LED lighting syst...

Light emitting device with improved extraction efficiency

Light emitting device with improved extraction efficiency

Method of forming a composite substrate

Light emitting device with improved extraction efficiency

Method of forming a composite substrate

Light emitting device with improved extraction efficiency

III-nitride light emitting devices grown on templates to reduce strain

P-type layer for a III-nitride light emitting device

III-nitride light emitting device with double heterostructure light...

III-nitride light emitting devices grown on templates to reduce strain

III-nitride light emitting devices grown on templates to reduce strain

Formation of Ohmic contacts in III-nitride light emitting devices

Light emitting diodes with graded composition active regions

Strain-controlled III-nitride light emitting device

Light emitting diodes with graded composition active regions

Formation of Ohmic contacts in III-nitride light emitting devices

Growth of III-nitride films on mismatched substrates without conven...

Formation of ohmic contacts in III-nitride light emitting devices

Indium gallium nitride smoothing structures for III-nitride devices

III-Nitride light emitting devices with low driving voltage

Increasing the brightness of III-nitride light emitting devices

Indium gallium nitride smoothing structures for III-nitride devices

Semiconductor devices with selectively doped III-V nitride layers

Method of strain engineering and impurity control in III-V nitride...

Strain engineered and impurity controlled III-V nitride semiconduct...

Ion-implantation assisted wet chemical etching of III-V nitrides an...

Semiconductor devices constructed from crystallites

Patents Applicationslast 30 patents

COLOR TUNABLE LIGHT EMITTING DIODE (LED) SYSTEMS, LED LIGHTING SYST...

COLOR TUNABLE LIGHT EMITTING DIODE (LED) SYSTEMS, LED LIGHTING SYST...

HIGH POWER LED ASSEMBLY AND METHOD OF FORMING A HIGH POWER LED ASSE...

HIGH POWER LED ASSEMBLY AND METHOD OF FORMING A HIGH POWER LED ASSE...

LIGHT EMITTING DEVICE WITH IMPROVED EXTRACTION EFFICIENCY

LIGHT EMITTING DEVICE WITH IMPROVED EXTRACTION EFFICIENCY

METHOD OF FORMING A COMPOSITE SUBSTRATE

Light emitting device with improved extraction efficiency

LIGHT EMITTING DEVICE WITH IMPROVED EXTRACTION EFFICIENCY

METHOD OF FORMING A COMPOSITE SUBSTRATE

P-TYPE LAYER FOR A III-NITRIDE LIGHT EMITTING DEVICE

III-Nitride Light Emitting Devices Grown on Templates to Reduce Strain

III-Nitride Light Emitting Devices Grown on Templates to Reduce Strain

III-Nitride Light Emitting Devices Grown on Templates to Reduce Strain

P-Type Layer For A III-Nitride Light Emitting Device

III-Nitride Light Emitting Device with Double Heterostructure Light...

Strain-controlled III-nitride light emitting device

Light emitting diodes with graded composition active regions

STRAIN-CONTROLLED III-NITRIDE LIGHT EMITTING DEVICE

Formation of Ohmic contacts in III-nitride light emitting devices

Growth of III-nitride films on mismatched substrates without conven...

Formation of Ohmic contacts in III-nitride light emitting devices

Increasing the brightness of III-Nitride light emitting devices

Light emitting diodes with graded composition active regions

III-Nitride light emitting devices with low driving voltage

INDIUM GALLIUM NITRIDE SMOOTHING STRUCTURES FOR III-NITRIDE DEVICES

Indium gallium nitride smoothing structures for III-nitride devices

Increasing the brightness of III-nitride light emitting devices

Formation of ohmic contacts in III-nitride light emitting devices

SEMICONDUCTOR DEVICES WITH SELECTIVELY DOPED III-V NITRIDE LAYERS