Claims
- 1. A method comprising:
providing a sapphire substrate having an upper face wherein said upper face is misaligned from a main crystal plane of said substrate at least 0.05°; depositing a base layer above said upper face of said substrate wherein said base layer has a thickness exceeding about 3.5 micrometers; doping at least a portion of said base layer with an n-type dopant; and forming a III-Nitride light emitting region above said base layer.
- 2. The method of claim 1 further comprising removing said substrate following said depositing said base layer thereon.
- 3. The method of claim 1 wherein said upper face of said sapphire substrate is misaligned from a main crystal plane of said substrate at an angle between about 0.05° and about 10°.
- 4. The method of claim 1 wherein said upper face of said sapphire substrate is misaligned from a main crystal plane of said substrate at an angle between about 0.05° and about 5°.
- 5. The method of claim 1 wherein said upper face of said sapphire substrate is misaligned from a main crystal plane of said substrate at an angle between about 0.05° and about 1°.
- 6. The method of claim 1 wherein said thickness is between about 3.5 micrometers to about 200 micrometers.
- 7. The method of claim 1 wherein said thickness is between about 3.5 micrometers to about 20 micrometers.
- 8. The method of claim 1 wherein said thickness is between about 3.5 micrometers to about 10 micrometers.
- 9. The method of claim 1 wherein said thickness is between about 3.5 micrometers to about 7 micrometers.
- 10. The method of claim 1 wherein said main crystal plane is the c-plane.
- 11. The method of claim 1 wherein said main crystal plane is the r-plane.
- 12. The method of claim 1 wherein said main crystal plane is the a-plane.
- 13. The method of claim 1 wherein said main crystal plane is the m-plane.
- 14. The method of claim 1 wherein doping at least a portion of said base layer comprises increasing a doping level of the base layer in a direction towards said light-emitting region.
- 15. The method of claim 1 wherein:
depositing a base layer comprises depositing a first sublayer above said upper face and a second sublayer above said first sublayer; and doping at least a portion of the base layer comprises doping said second sublayer more heavily than said first sublayer.
- 16. The method of claim 15 wherein said first sublayer has a dopant concentration less than about 5×1018 cm−3 and said second sublayer has a dopant concentration of at least about 1018 cm−3.
- 17. The method of claim 15 wherein depositing a base layer further comprises depositing a third sublayer over the second sublayer.
- 18. A method comprising:
providing a substrate having an upper face wherein said upper face is misaligned from a main crystal plane of said substrate at least 0.05°; depositing a base layer above said upper face of said substrate wherein said base layer has a thickness exceeding about 5.5 micrometers; and forming a III-Nitride light emitting region above said base layer.
- 19. The method of claim 18 further comprising removing said substrate following said depositing said base layer thereon.
- 20. The method of claim 18 wherein said thickness is between about 6.5 micrometers to about 200 micrometers.
- 21. The method of claim 18 wherein said thickness is between about 6.5 micrometers to about 20 micrometers.
- 22. The method of claim 18 wherein said thickness is between about 6.5 micrometers to about 10 micrometers.
- 23. The method of claim 18 wherein providing a substrate comprises providing a substrate selected from the group consisting of sapphire, silicon carbide, gallium nitride, gallium arsenide, and gallium phosphide.
- 24. The method of claim 18 further comprising doping at least a portion of the base layer.
- 25. The method of claim 24 wherein doping at least a portion of said base layer comprises increasing a doping level of the base layer in a direction towards the light-emitting region.
- 26. The method of claim 24 wherein:
depositing a base layer comprises depositing a first sublayer above said upper face and a second sublayer above said first sublayer; and doping at least a portion of the base layer comprises doping said second sublayer more heavily than said first sublayer.
- 27. The method of claim 26 wherein said first sublayer has a dopant concentration less than about 5×1018 cm−3 and said second sublayer has a dopant concentration of at least about 1018 cm−3.
- 28. The method of claim 26 wherein depositing a base layer further comprises depositing a third sublayer over the second sublayer.
- 29. The method of claim 18 wherein said upper face of said substrate is misaligned from a main crystal plane of said substrate at an angle between about 0.05° and about 10°.
- 30. The method of claim 18 wherein said upper face of said substrate is misaligned from a main crystal plane of said substrate at an angle between about 0.05° and about 5°.
- 31. The method of claim 18 wherein said upper face of said substrate is misaligned from a main crystal plane of said substrate at an angle between about 0.05° and about 1°.
CROSS REFERENCE TO RELATED APPLICATION
[0001] This application is a division of application Ser. No. 09/797,770, filed Mar. 1, 2001, now U.S. Pat. No. 6,576,932, which is incorporated herein by reference.
Divisions (1)
|
Number |
Date |
Country |
Parent |
09797770 |
Mar 2001 |
US |
Child |
10448503 |
May 2003 |
US |