William Budge

Person

Homedale, ID, US

People

Patents Grantslast 30 patents

Information Patent Grant
Protection in integrated circuits
- Patent number 7,632,737
- Issue date Dec 15, 2009
- Micron Technology, Inc.
- Neal R. Rueger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low k interlevel dielectric layer fabrication methods
- Patent number 7,521,354
- Issue date Apr 21, 2009
- Micron Technology, Inc.
- Weimin Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench insulation structures including an oxide liner and oxidation...
- Patent number 7,501,691
- Issue date Mar 10, 2009
- Micron Technology, Inc.
- John A. Smythe, III
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Protection in integrated circuits
- Patent number 7,494,894
- Issue date Feb 24, 2009
- Micron Technology, Inc.
- Neal R. Rueger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an isolation structure that includes forming a si...
- Patent number 7,479,440
- Issue date Jan 20, 2009
- Micron Technology, Inc.
- John A. Smythe, III
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of filling gaps using high density plasma chemical vapor de...
- Patent number 7,273,793
- Issue date Sep 25, 2007
- Micron Technology, Inc.
- Neal R. Rueger
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Trench insulation structures including an oxide liner that is thinn...
- Patent number 7,271,463
- Issue date Sep 18, 2007
- Micron Technology, Inc.
- John A. Smythe, III
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for filling high aspect ratio trenches in semiconductor layers
- Patent number 7,259,079
- Issue date Aug 21, 2007
- Micron Technology, Inc.
- Jingyi Bai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selectively deposited silicon oxide layers on a silicon substrate
- Patent number 7,214,979
- Issue date May 8, 2007
- Micron Technology, Inc.
- William Budge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of filling gaps and methods of depositing materials using hi...
- Patent number 7,202,183
- Issue date Apr 10, 2007
- Micron Technology, Inc.
- Neal R. Rueger
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Use of linear injectors to deposit uniform selective ozone TEOS oxi...
- Patent number 7,192,893
- Issue date Mar 20, 2007
- Micron Technology Inc.
- William Budge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low K interlevel dielectric layer fabrication methods
- Patent number 7,078,356
- Issue date Jul 18, 2006
- Micron Technology, Inc.
- Weimin Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low k interlevel dielectric layer fabrication methods
- Patent number 7,067,415
- Issue date Jun 27, 2006
- Micron Technology, Inc.
- Weimin Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low k interlevel dielectric layer fabrication methods
- Patent number 7,067,414
- Issue date Jun 27, 2006
- Micron Technology, Inc.
- Weimin Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of filling gaps and methods of depositing materials using h...
- Patent number 7,056,833
- Issue date Jun 6, 2006
- Micron Technology, Inc.
- Neal R. Rueger
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Methods for filling high aspect ratio trenches in semiconductor layers
- Patent number 6,982,207
- Issue date Jan 3, 2006
- Micron Technology, Inc.
- Jingyi Bai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Use of selective ozone teos oxide to create variable thickness laye...
- Patent number 6,617,230
- Issue date Sep 9, 2003
- Micron Technology, Inc.
- William Budge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Use of linear injectors to deposit uniform selective ozone TEOS oxi...
- Patent number 6,602,807
- Issue date Aug 5, 2003
- Micron Technology, Inc.
- William Budge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Use of linear injectors to deposit uniform selective ozone TEOS oxi...
- Patent number 6,503,851
- Issue date Jan 7, 2003
- Micron Technology, Inc.
- William Budge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Use of selective ozone TEOS oxide to create variable thickness laye...
- Patent number 6,368,986
- Issue date Apr 9, 2002
- Micron Technology, Inc.
- William Budge
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TRENCH INSULATION STRUCTURES AND METHODS
- Publication number 20070290294
- Publication date Dec 20, 2007
- Micron Technology, Inc.
- John A. Smythe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH INSULATION STRUCTURES AND METHODS
- Publication number 20070111470
- Publication date May 17, 2007
- MICRON TECHNOLGY, INC.
- John A. Smythe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROTECTION IN INTEGRATED CIRCUITS
- Publication number 20060270240
- Publication date Nov 30, 2006
- Neal R. Rueger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of filling gaps and methods of depositing materials using hi...
- Publication number 20060134924
- Publication date Jun 22, 2006
- Micron Technology, Inc.
- Neal R. Rueger
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Trench insulation structures and methods
- Publication number 20060125043
- Publication date Jun 15, 2006
- John A. Smythe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low k interlevel dielectric layer fabrication methods
- Publication number 20060068584
- Publication date Mar 30, 2006
- Weimin Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of filling gaps using high density plasma chemical vapor de...
- Publication number 20050196976
- Publication date Sep 8, 2005
- Neal R. Rueger
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Methods for filling high aspect ratio trenches in semiconductor layers
- Publication number 20050158965
- Publication date Jul 21, 2005
- Jingyi Bai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of filling gaps and methods of depositing materials using h...
- Publication number 20050064729
- Publication date Mar 24, 2005
- Neal R. Rueger
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Selectively deposited silicon oxide layers on a silicon substrate
- Publication number 20050035418
- Publication date Feb 17, 2005
- Micron Technology, Inc.
- William Budge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for filling high aspect ratio trenches in semiconductor layers
- Publication number 20050009291
- Publication date Jan 13, 2005
- Jingyi Bai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Protection in integrated circuits
- Publication number 20040043580
- Publication date Mar 4, 2004
- Micron Technology, Inc.
- Neal R. Rueger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Use of linear injectors to deposit uniform selective ozone TEOS oxi...
- Publication number 20040029402
- Publication date Feb 12, 2004
- William Budge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
USE OF LINEAR INJECTORS TO DEPOSIT UNIFORM SELECTIVE OZONE TEOS OXI...
- Publication number 20030092248
- Publication date May 15, 2003
- William Budge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low k interlevel dielectric layer fabrication methods
- Publication number 20020187628
- Publication date Dec 12, 2002
- Weimin Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Use of selective ozone TEOS oxide to create variable thickness laye...
- Publication number 20020098633
- Publication date Jul 25, 2002
- William Budge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low k interlevel dielectric layer fabrication methods
- Publication number 20020098684
- Publication date Jul 25, 2002
- Weimin Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Use of linear injectors to deposit uniform selective ozone TEOS oxi...
- Publication number 20020025692
- Publication date Feb 28, 2002
- William Budge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Use of selective ozone teos oxide to create variable thickness laye...
- Publication number 20020025666
- Publication date Feb 28, 2002
- William Budge
- H01 - BASIC ELECTRIC ELEMENTS

William Budge

Person

Patents Grantslast 30 patents

Protection in integrated circuits

Low k interlevel dielectric layer fabrication methods

Trench insulation structures including an oxide liner and oxidation...

Protection in integrated circuits

Method of forming an isolation structure that includes forming a si...

Methods of filling gaps using high density plasma chemical vapor de...

Trench insulation structures including an oxide liner that is thinn...

Methods for filling high aspect ratio trenches in semiconductor layers

Selectively deposited silicon oxide layers on a silicon substrate

Method of filling gaps and methods of depositing materials using hi...

Use of linear injectors to deposit uniform selective ozone TEOS oxi...

Low K interlevel dielectric layer fabrication methods

Low k interlevel dielectric layer fabrication methods

Low k interlevel dielectric layer fabrication methods

Methods of filling gaps and methods of depositing materials using h...

Methods for filling high aspect ratio trenches in semiconductor layers

Use of selective ozone teos oxide to create variable thickness laye...

Use of linear injectors to deposit uniform selective ozone TEOS oxi...

Use of linear injectors to deposit uniform selective ozone TEOS oxi...

Use of selective ozone TEOS oxide to create variable thickness laye...

Patents Applicationslast 30 patents

TRENCH INSULATION STRUCTURES AND METHODS

TRENCH INSULATION STRUCTURES AND METHODS

PROTECTION IN INTEGRATED CIRCUITS

Method of filling gaps and methods of depositing materials using hi...

Trench insulation structures and methods

Low k interlevel dielectric layer fabrication methods

Methods of filling gaps using high density plasma chemical vapor de...

Methods for filling high aspect ratio trenches in semiconductor layers

Methods of filling gaps and methods of depositing materials using h...

Selectively deposited silicon oxide layers on a silicon substrate

Methods for filling high aspect ratio trenches in semiconductor layers

Protection in integrated circuits

Use of linear injectors to deposit uniform selective ozone TEOS oxi...

USE OF LINEAR INJECTORS TO DEPOSIT UNIFORM SELECTIVE OZONE TEOS OXI...

Low k interlevel dielectric layer fabrication methods

Use of selective ozone TEOS oxide to create variable thickness laye...

Low k interlevel dielectric layer fabrication methods

Use of linear injectors to deposit uniform selective ozone TEOS oxi...

Use of selective ozone teos oxide to create variable thickness laye...