Claims
- 1. A method of forming a semiconductor device, the method comprising the steps of:providing a silicon-comprising substrate having a surface comprising at least one first wordline comprising P-type silicon and at least one second wordline comprising N-type silicon, the first and second wordlines being separated on the substrate; contacting the substrate with ozone and tetraethylorthosilicate, wherein delivery of the ozone is pulsed on and off, and delivery of the ozone and the tetraethylorthosilicate is via a linear injector, whereby the first wordline and the second wordline are in intimate contact with the ozone and the tetraethylorthosilicate; reacting the ozone and the tetraethylorthosilicate to selectively deposit silicon oxide over the substrate surface and both the first wordline and the second wordline, whereby a greater thickness of silicon oxide is deposited on the first wordline than on the second wordline; and, etching the silicon oxide deposited on the substrate to remove silicon oxide from the surface of the substrate, whereby the silicon oxide layers remaining on the first and second wordlines provides a layer of variable thickness around the first wordline and the second wordline; wherein the semiconductor device is a memory array having wordlines with spacers of variable thickness.
- 2. A method of forming a semiconductor device, the method comprising the steps of:providing a silicon-comprising substrate having a surface comprising at least one first wordline comprising P-type silicon and at least one second wordline comprising N-type silicon: reacting ozone and tetraethylorthosilicate at a temperature up to about 500° C. and a pressure of at least about 10 torr wherein delivery of the ozone is pulsed on and off, and the ozone and the tetraethylorthosilicate are delivered via a linear injector, to selectively deposit silicon oxide over the substrate surface and both the first wordline and the second wordline, whereby a greater thickness of silicon oxide is deposited on the first wordline than on the second wordline; and, etching the silicon oxide deposited on the substrate to remove silicon oxide from the surface of the substrate, whereby the silicon oxide layers remaining on the first and second wordlines provide a layer of variable thickness around the first wordline and the second wordline; wherein the semiconductor device is a memory array having wordlines with spacers of variable thickness.
- 3. The method of claim 2, wherein the reaction occurs at a temperature up to about 400° C.
- 4. The method of claim 2, wherein the reaction occurs at a pressure of at least about 300 torr.
- 5. The method of claim 2, wherein the ozone is pulsed at intervals between 1-4 seconds.
- 6. The method of claim 2, wherein the ozone is pulsed at intervals of about 1 second.
- 7. A method of forming a semiconductor device, the method comprising the steps of:providing a silicon-comprising substrate having a surface comprising at least one first wordline comprising P-type silicon and at least one second wordline comprising N-type silicon, the first and second wordlines being separated on the substrate; contacting the substrate with ozone and tetraethylorthosilicate wherein delivery of the ozone and the tetraethylorthosilicate are alternately pulsed on and off, and delivery of the ozone and the tetraethylorthosilicate is via a linear injector, whereby the first wordline and the second wordline are in intimate contact with the ozone and the tetraethylorthosilicate; reacting the ozone and the tetraethylorthosilicate to selectively deposit silicon oxide over the substrate surface and both the first wordline and the second wordline, whereby a greater thickness of silicon oxide is deposited on the first wordline than on the second wordline; and, etching the silicon oxide deposited on the substrate to remove silicon oxide from the surface of the substrate, whereby the silicon oxide layers remaining on the first and second wordlines provide a layer of variable thickness around the first wordline and the second wordline; wherein the semiconductor device is a memory array having wordlines with spacers of variable thickness.
- 8. A method of forming a semiconductor device, the method comprising the steps of:providing a silicon-comprising substrate having a surface comprising at least one first wordline comprising P-type silicon and at least one second wordline comprising N-type silicon: reacting ozone and tetraethylorthosilicate at a temperature up to about 500° C. and a pressure of at least about 10 torr wherein delivery of the ozone and the tetraethylorthosilicate are alternately pulsed on and off, and the ozone and the tetraethylorthosilicate are delivered via a linear injector, to selectively deposit silicon oxide over the substrate surface and both the first wordline and the second wordline, whereby a greater thickness of silicon oxide is deposited on the first wordline than on the second wordline; and, etching the silicon oxide deposited on the substrate to remove silicon oxide from the surface of the substrate, whereby the silicon oxide layers remaining on the first and second wordlines provide a layer of variable thickness around the first wordline and the second wordline; wherein the semiconductor device is a memory array having wordlines with spacers of variable thickness.
- 9. The method of claim 8, wherein the reaction occurs at a temperature up to about 400° C.
- 10. The method of claim 8, wherein the reaction occurs at a pressure of at least about 300 torr.
- 11. The method of claim 8, wherein the ozone is pulsed at intervals between 1-4 seconds.
- 12. The method of claim 8, wherein the ozone is pulsed at intervals of about 2 seconds.
CROSS-REFERENCE TO RELATED APPLICATIONS
This application is a continuation of U.S. patent application Ser. No. 09/921,539, filed Aug. 3, 2001, now U.S. Pat. No. 6,503,851, issued Jan. 7, 2003 which is a continuation-in-part of U.S. patent application Ser. No. 09/652,188, filed Aug. 31, 2000, now U.S. Pat. No. 6,368,986 B1.
US Referenced Citations (10)
Foreign Referenced Citations (1)
Number |
Date |
Country |
406283526 |
Oct 1994 |
JP |
Continuations (1)
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Number |
Date |
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Parent |
09/921539 |
Aug 2001 |
US |
Child |
10/298867 |
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US |
Continuation in Parts (1)
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Number |
Date |
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Parent |
09/652188 |
Aug 2000 |
US |
Child |
09/921539 |
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US |