Xiaobing Mei

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Manhatten Beach, CA, US

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Patents Grantslast 30 patents

Information Patent Grant
Shifting the pinch-off voltage of an InP high electron mobility tra...
- Patent number 11,309,412
- Issue date Apr 19, 2022
- Northrop Grumman Systems Corporation
- Xiaobing Mei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned double gate recess for semiconductor field effect tran...
- Patent number 9,583,589
- Issue date Feb 28, 2017
- Northrop Grumman Systems Corporation
- Xiaobing Mei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Half-through vias for suppression of substrate modes
- Patent number 8,304,916
- Issue date Nov 6, 2012
- Northrop Grumman Systems Corporation
- Stephen J. Sarkozy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor semiconductor device and fabricat...
- Patent number 7,709,860
- Issue date May 4, 2010
- Northrop Grumman Space & Mission Systems Corp.
- Linh Dang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR SEMICONDUCTOR DEVICE AND FABRICAT...
- Publication number 20090206369
- Publication date Aug 20, 2009
- Northrop Grumman Space & Mission Systems Corp.
- Linh Dang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with OHMIC Contact and Method of Making the Same
- Publication number 20090065811
- Publication date Mar 12, 2009
- Ping-Chih Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low contact resistance ohmic contact for a high electron mobility t...
- Publication number 20080258242
- Publication date Oct 23, 2008
- Northrop Grumman Space & Mission Systems Corp.
- Xiaobing Mei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High electron mobility transistor semiconductor device and fabricat...
- Publication number 20080111157
- Publication date May 15, 2008
- Northrop Grumman Corporation
- Linh Dang
- H01 - BASIC ELECTRIC ELEMENTS