Xinshu CAI

Person

Singapore, SG

People

Patents Grantslast 30 patents

Information Patent Grant
Transistor with wrap-around extrinsic base
- Patent number 12,142,673
- Issue date Nov 12, 2024
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Xinshu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistors
- Patent number 12,107,124
- Issue date Oct 1, 2024
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Xinshu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-semiconductor layer photodetector and related method
- Patent number 12,051,761
- Issue date Jul 30, 2024
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Xinshu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory devices with asymmetrical floating gates
- Patent number 11,901,425
- Issue date Feb 13, 2024
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Shyue Seng Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with wrap-around extrinsic base
- Patent number 11,855,195
- Issue date Dec 26, 2023
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Xinshu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with wrap-around extrinsic base
- Patent number 11,855,196
- Issue date Dec 26, 2023
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Xinshu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RRAM devices and methods of forming RRAM devices
- Patent number 11,839,166
- Issue date Dec 5, 2023
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Xinshu Cai
Information Patent Grant
Nonvolatile memory device with a doped region between a source and...
- Patent number 11,810,982
- Issue date Nov 7, 2023
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Yongshun Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single well one transistor and one capacitor nonvolatile memory dev...
- Patent number 11,659,709
- Issue date May 23, 2023
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Xinshu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor non-volatile memory devices
- Patent number 11,641,739
- Issue date May 2, 2023
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Yongshun Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
One transistor two capacitors nonvolatile memory cell
- Patent number 11,515,314
- Issue date Nov 29, 2022
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Xinshu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory devices
- Patent number 11,502,127
- Issue date Nov 15, 2022
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Shyue Seng Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-finger gate nonvolatile memory cell
- Patent number 11,495,608
- Issue date Nov 8, 2022
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Lanxiang Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Partially silicided nonvolatile memory devices and integration schemes
- Patent number 11,450,677
- Issue date Sep 20, 2022
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Lanxiang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split gate flash memory cells with a trench-formed select gate
- Patent number 11,404,549
- Issue date Aug 2, 2022
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Xinshu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory structures and methods of forming memory structures
- Patent number 11,380,703
- Issue date Jul 5, 2022
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Xinshu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanogap sensors and methods of forming the same
- Patent number 11,320,417
- Issue date May 3, 2022
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Xinshu Cai
- G01 - MEASURING TESTING
Information Patent Grant
Dual bit memory device with triple gate structure
- Patent number 11,227,924
- Issue date Jan 18, 2022
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Xinshu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device, memory arrays, and methods of forming the same
- Patent number 11,164,881
- Issue date Nov 2, 2021
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Xinshu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory bit cells with non-rectangular floating gates
- Patent number 11,158,643
- Issue date Oct 26, 2021
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Lanxiang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Neuromorphic memories with split gate flash multi-level cell and me...
- Patent number 11,119,917
- Issue date Sep 14, 2021
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Danny Pak-Chum Shum
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory cells with extended erase gate, and process of fabrication
- Patent number 11,088,156
- Issue date Aug 10, 2021
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Xinshu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with ion-sensitive field effect transistor
- Patent number 11,054,387
- Issue date Jul 6, 2021
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Xinshu Cai
- G01 - MEASURING TESTING
Information Patent Grant
Memory device and a method for forming the memory device
- Patent number 10,991,704
- Issue date Apr 27, 2021
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Xinshu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Anti-fuse memory cell and a method for forming the anti-fuse memory...
- Patent number 10,903,217
- Issue date Jan 26, 2021
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Xinshu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sensor devices and methods of forming the same
- Patent number 10,830,731
- Issue date Nov 10, 2020
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Xinshu Cai
- G01 - MEASURING TESTING
Information Patent Grant
Memory arrays and methods of forming the same
- Patent number 10,762,966
- Issue date Sep 1, 2020
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Xinshu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal-insulator-poly capacitor in a high-K metal gate process and m...
- Patent number 10,636,867
- Issue date Apr 28, 2020
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Xinshu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Poly-insulator-poly (PIP) capacitor
- Patent number 10,468,427
- Issue date Nov 5, 2019
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Xinshu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strap layout for non-volatile memory device
- Patent number 10,103,156
- Issue date Oct 16, 2018
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Xinshu Cai
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
BIPOLAR TRANSISTORS
- Publication number 20240395869
- Publication date Nov 28, 2024
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Xinshu CAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE PROGRAMMABLE DEVICES WITH FILAMENT CONFINEMENT
- Publication number 20240381794
- Publication date Nov 14, 2024
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Xinshu CAI
Information Patent Application
CAPACITOR STRUCTURES OF SEMICONDUCTOR DEVICES
- Publication number 20240297211
- Publication date Sep 5, 2024
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Xinshu CAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JUNCTION FIELD-EFFECT TRANSISTORS
- Publication number 20240234498
- Publication date Jul 11, 2024
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Xinshu CAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JUNCTION FIELD-EFFECT TRANSISTORS
- Publication number 20240136395
- Publication date Apr 25, 2024
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Xinshu CAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WRAP-AROUND MEMORY CIRCUIT
- Publication number 20240114682
- Publication date Apr 4, 2024
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Xinshu CAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE-PHOTON AVALANCHE DIODE WITH ISOLATED JUNCTIONS
- Publication number 20240088173
- Publication date Mar 14, 2024
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- XINSHU CAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
E-FUSE STRUCTURES
- Publication number 20240047347
- Publication date Feb 8, 2024
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Xinshu CAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH WRAP-AROUND EXTRINSIC BASE
- Publication number 20240006517
- Publication date Jan 4, 2024
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Xinshu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRODES OF SEMICONDUCTOR MEMORY DEVICES HAVING CORNERS OF ACUTE...
- Publication number 20230320240
- Publication date Oct 5, 2023
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Xinshu CAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTORS
- Publication number 20230197787
- Publication date Jun 22, 2023
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Xinshu CAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTORS
- Publication number 20230178638
- Publication date Jun 8, 2023
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Xinshu CAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH WRAP-AROUND EXTRINSIC BASE
- Publication number 20230129914
- Publication date Apr 27, 2023
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Xinshu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH WRAP-AROUND EXTRINSIC BASE
- Publication number 20230127768
- Publication date Apr 27, 2023
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Xinshu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY DEVICES WITH ASYMMETRICAL FLOATING GATES
- Publication number 20230062215
- Publication date Mar 2, 2023
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Shyue Seng TAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY DEVICES WITH A CHARGE-DETRAP MECHANISM
- Publication number 20230033348
- Publication date Feb 2, 2023
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- SHYUE SENG TAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONVOLATILE MEMORY DEVICE WITH A DOPED REGION BETWEEN A SOURCE AND...
- Publication number 20230029507
- Publication date Feb 2, 2023
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- YONGSHUN SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONVOLATILE MEMORY DEVICE WITH AN ERASE GATE OVERHANG AND INTEGRATI...
- Publication number 20220293614
- Publication date Sep 15, 2022
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Xinshu Cai
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICES
- Publication number 20220208856
- Publication date Jun 30, 2022
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Shyue Seng TAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARTIALLY SILICIDED NONVOLATILE MEMORY DEVICES AND INTEGRATION SCHEMES
- Publication number 20220149057
- Publication date May 12, 2022
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- LANXIANG WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY STRUCTURES AND METHODS OF FORMING MEMORY STRUCTURES
- Publication number 20220139929
- Publication date May 5, 2022
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- XINSHU CAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT GATE FLASH MEMORY CELLS WITH A TRENCH-FORMED SELECT GATE
- Publication number 20220093765
- Publication date Mar 24, 2022
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- XINSHU CAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE WELL ONE TRANSISTOR AND ONE CAPACITOR NONVOLATILE MEMORY DEV...
- Publication number 20220059554
- Publication date Feb 24, 2022
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- XINSHU CAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-FINGER GATE NONVOLATILE MEMORY CELL
- Publication number 20220037343
- Publication date Feb 3, 2022
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- LANXIANG WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ONE TRANSISTOR TWO CAPACITORS NONVOLATILE MEMORY CELL
- Publication number 20210384204
- Publication date Dec 9, 2021
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- XINSHU CAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR NON-VOLATILE MEMORY DEVICES
- Publication number 20210375895
- Publication date Dec 2, 2021
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- YONGSHUN SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RRAM DEVICES AND METHODS OF FORMING RRAM DEVICES
- Publication number 20210313512
- Publication date Oct 7, 2021
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Xinshu CAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL BIT MEMORY DEVICE WITH TRIPLE GATE STRUCTURE
- Publication number 20210217865
- Publication date Jul 15, 2021
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Xinshu CAI
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY BIT CELLS WITH NON-RECTANGULAR FLOATING GATES
- Publication number 20210159234
- Publication date May 27, 2021
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Lanxiang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELLS WITH EXTENDED ERASE GATE, AND PROCESS OF FABRICATION
- Publication number 20210066324
- Publication date Mar 4, 2021
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- XINSHU CAI
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Transistor with wrap-around extrinsic base

Bipolar transistors

Multi-semiconductor layer photodetector and related method

Non-volatile memory devices with asymmetrical floating gates

Transistor with wrap-around extrinsic base

Transistor with wrap-around extrinsic base

RRAM devices and methods of forming RRAM devices

Nonvolatile memory device with a doped region between a source and...

Single well one transistor and one capacitor nonvolatile memory dev...

Semiconductor non-volatile memory devices

One transistor two capacitors nonvolatile memory cell

Semiconductor memory devices

Multi-finger gate nonvolatile memory cell

Partially silicided nonvolatile memory devices and integration schemes

Split gate flash memory cells with a trench-formed select gate

Memory structures and methods of forming memory structures

Nanogap sensors and methods of forming the same

Dual bit memory device with triple gate structure

Transistor device, memory arrays, and methods of forming the same

Non-volatile memory bit cells with non-rectangular floating gates

Neuromorphic memories with split gate flash multi-level cell and me...

Memory cells with extended erase gate, and process of fabrication

Semiconductor devices with ion-sensitive field effect transistor

Memory device and a method for forming the memory device

Anti-fuse memory cell and a method for forming the anti-fuse memory...

Sensor devices and methods of forming the same

Memory arrays and methods of forming the same

Metal-insulator-poly capacitor in a high-K metal gate process and m...

Poly-insulator-poly (PIP) capacitor

Strap layout for non-volatile memory device

Patents Applicationslast 30 patents

BIPOLAR TRANSISTORS

NON-VOLATILE PROGRAMMABLE DEVICES WITH FILAMENT CONFINEMENT

CAPACITOR STRUCTURES OF SEMICONDUCTOR DEVICES

JUNCTION FIELD-EFFECT TRANSISTORS

JUNCTION FIELD-EFFECT TRANSISTORS

WRAP-AROUND MEMORY CIRCUIT

SINGLE-PHOTON AVALANCHE DIODE WITH ISOLATED JUNCTIONS

E-FUSE STRUCTURES

TRANSISTOR WITH WRAP-AROUND EXTRINSIC BASE

ELECTRODES OF SEMICONDUCTOR MEMORY DEVICES HAVING CORNERS OF ACUTE...

BIPOLAR TRANSISTORS

BIPOLAR TRANSISTORS

TRANSISTOR WITH WRAP-AROUND EXTRINSIC BASE

TRANSISTOR WITH WRAP-AROUND EXTRINSIC BASE

NON-VOLATILE MEMORY DEVICES WITH ASYMMETRICAL FLOATING GATES

NON-VOLATILE MEMORY DEVICES WITH A CHARGE-DETRAP MECHANISM

NONVOLATILE MEMORY DEVICE WITH A DOPED REGION BETWEEN A SOURCE AND...

NONVOLATILE MEMORY DEVICE WITH AN ERASE GATE OVERHANG AND INTEGRATI...

SEMICONDUCTOR MEMORY DEVICES

PARTIALLY SILICIDED NONVOLATILE MEMORY DEVICES AND INTEGRATION SCHEMES

MEMORY STRUCTURES AND METHODS OF FORMING MEMORY STRUCTURES

SPLIT GATE FLASH MEMORY CELLS WITH A TRENCH-FORMED SELECT GATE

SINGLE WELL ONE TRANSISTOR AND ONE CAPACITOR NONVOLATILE MEMORY DEV...

MULTI-FINGER GATE NONVOLATILE MEMORY CELL

ONE TRANSISTOR TWO CAPACITORS NONVOLATILE MEMORY CELL

SEMICONDUCTOR NON-VOLATILE MEMORY DEVICES

RRAM DEVICES AND METHODS OF FORMING RRAM DEVICES

DUAL BIT MEMORY DEVICE WITH TRIPLE GATE STRUCTURE

NON-VOLATILE MEMORY BIT CELLS WITH NON-RECTANGULAR FLOATING GATES

MEMORY CELLS WITH EXTENDED ERASE GATE, AND PROCESS OF FABRICATION