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Yan Man Tsui
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Union City, CA, US
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Patents Grants
last 30 patents
Information
Patent Grant
Method of making a trench MOSFET device with improved on-resistance
Patent number
7,094,640
Issue date
Aug 22, 2006
General Semiconductor, Inc.
Fwu-Iuan Hshieh
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Trench MOSFET device with polycrystalline silicon source contact st...
Patent number
7,015,125
Issue date
Mar 21, 2006
General Semiconductor, Inc.
Fwu-Iuan Hshieh
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for assembling a semiconductor chip utilizing conducting bar...
Patent number
6,927,094
Issue date
Aug 9, 2005
General Semiconductor of Taiwan, Ltd.
Max Chen
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Trench MOSFET device with polycrystalline silicon source contact st...
Patent number
6,822,288
Issue date
Nov 23, 2004
General Semiconductor, Inc.
Fwu-Iuan Hshieh
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Trench DMOS transistor having improved trench structure
Patent number
6,781,196
Issue date
Aug 24, 2004
General Semiconductor, Inc.
Koon Chong So
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Trench DMOS transistor with embedded trench schottky rectifier
Patent number
6,762,098
Issue date
Jul 13, 2004
General Semiconductor, Inc.
Fwu-Iuan Hshieh
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Two-mask trench schottky diode
Patent number
6,740,951
Issue date
May 25, 2004
General Semiconductor, Inc.
Yan Man Tsui
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of forming a trench MOSFET with structure having increased c...
Patent number
6,713,352
Issue date
Mar 30, 2004
General Semiconductor, Inc.
Fwu-Iuan Hshieh
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Trench schottky rectifier
Patent number
6,707,127
Issue date
Mar 16, 2004
General Semiconductor, Inc.
Fwu-Iuan Hshieh
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Trench MOSFET device with improved on-resistance
Patent number
6,657,254
Issue date
Dec 2, 2003
General Semiconductor, Inc.
Fwu-Iuan Hshieh
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor trench device with enhanced gate oxide integrity stru...
Patent number
6,620,691
Issue date
Sep 16, 2003
General Semiconductor, Inc.
Fwu-Iuan Hshieh
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Trench DMOS transistor with embedded trench schottky rectifier
Patent number
6,593,620
Issue date
Jul 15, 2003
General Semiconductor, Inc.
Fwu-Iuan Hshieh
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor device packaging assembly
Patent number
6,576,985
Issue date
Jun 10, 2003
General Semiconductor Taiwan, Ltd.
Max Chen
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Trench DMOS structure with peripheral trench with no source regions
Patent number
6,576,952
Issue date
Jun 10, 2003
General Semiconductor, Inc.
Fwu-Iuan Hshieh
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Devices and methods for addressing optical edge effects in connecti...
Patent number
6,555,895
Issue date
Apr 29, 2003
General Semiconductor, Inc.
Fwu-Iuan Hshieh
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
DMOS transistor structure having improved performance
Patent number
6,548,860
Issue date
Apr 15, 2003
General Semiconductor, Inc.
Fwu-Iuan Hshieh
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Trench DMOS transistor having a double gate structure
Patent number
6,518,127
Issue date
Feb 11, 2003
General Semiconductor, Inc.
Fwu-Iuan Hshieh
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of forming a trench schottky rectifier
Patent number
6,518,152
Issue date
Feb 11, 2003
General Semiconductor, Inc.
Fwu-Iuan Hshieh
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Devices and methods for addressing optical edge effects in connecti...
Patent number
6,475,884
Issue date
Nov 5, 2002
General Semiconductor, Inc.
Fwu-Iuan Hshieh
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Trench MOSFET with structure having low gate charge
Patent number
6,472,708
Issue date
Oct 29, 2002
General Semiconductor, Inc.
Fwu-Iuan Hshieh
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Trench DMOS transistor having lightly doped source structure
Patent number
6,445,037
Issue date
Sep 3, 2002
General Semiconductor, Inc.
Fwu-Iuan Hshieh
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
MOSFET power device manufactured with reduced number of masks by fa...
Patent number
6,404,025
Issue date
Jun 11, 2002
MAGEPOWER Semiconductor Corp.
Fwu-Iuan Hshieh
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Gate/drain capacitance reduction for double gate-oxide DMOS without...
Patent number
6,048,759
Issue date
Apr 11, 2000
Magepower Semiconductor Corporation
Fwu-Iuan Hshieh
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Power MOSFET device manufactured with simplified fabrication proces...
Patent number
5,923,065
Issue date
Jul 13, 1999
MegaMOS Corporation
Koon Chong So
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
MOSFET structure and fabrication process implemented by forming dee...
Patent number
5,895,951
Issue date
Apr 20, 1999
MegaMOS Corporation
Koon Chong So
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Gate-contact structure to prevent contact metal penetration through...
Patent number
5,883,416
Issue date
Mar 16, 1999
MegaMOS Corporation
True-Lon Lin
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Edge wrap-around protective extension for covering and protecting e...
Patent number
5,883,410
Issue date
Mar 16, 1999
MegaMOS Corporation
Koon Chong So
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Mosfet termination design and core cell configuration to increase b...
Patent number
5,877,529
Issue date
Mar 2, 1999
MegaMOS Corporation
Koon Chong So
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
DMOS transistors having trenched gate oxide
Patent number
5,763,915
Issue date
Jun 9, 1998
MageMOS Corporation
Fwu-Juan Hshieh
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
MOSFET structure and fabrication process for decreasing threshold v...
Patent number
5,729,037
Issue date
Mar 17, 1998
MegaMOS Corporation
Fwu-Iuan Hshieh
H01 - BASIC ELECTRIC ELEMENTS
Patents Applications
last 30 patents
Information
Patent Application
Trench MOSFET device with polycrystalline silicon source contact st...
Publication number
20050062075
Publication date
Mar 24, 2005
Fwu-Iuan Hshieh
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Trench MOSFET device with improved on-resistance
Publication number
20040113203
Publication date
Jun 17, 2004
Fwu-Iuan Hshieh
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Trench DMOS transistor with embedded trench schottky rectifier
Publication number
20030207538
Publication date
Nov 6, 2003
Fwu-Iuan Hshieh
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Semiconductor device packaging assembly and method for manufacturin...
Publication number
20030205792
Publication date
Nov 6, 2003
Max Chen
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Trench DMOS transistor having improved trench structure
Publication number
20030168696
Publication date
Sep 11, 2003
Koon Chong So
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Trench MOSFET device with polycrystalline silicon source contact st...
Publication number
20030107080
Publication date
Jun 12, 2003
Fwu-Iuan Hshieh
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Trench MOSFET device with improved on-resistance
Publication number
20030094624
Publication date
May 22, 2003
Fwu-Iuan Hshieh
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Trench mosfet with structure having low gate charge
Publication number
20030011028
Publication date
Jan 16, 2003
Fwu-luan Hshieh
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Two-mask trench schottky diode
Publication number
20020175342
Publication date
Nov 28, 2002
Yan Man Tsui
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Devices and methods for addressing optical edge effects in connecti...
Publication number
20020093048
Publication date
Jul 18, 2002
Fwu-Iuan Hshieh
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Trench schottky rectifier
Publication number
20020066926
Publication date
Jun 6, 2002
Fwu-Iuan Hshieh
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Semiconductor trench device with enhanced gate oxide integrity stru...
Publication number
20020061623
Publication date
May 23, 2002
Fwu-Iuan Hshieh
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
MOSFET POWER DEVICE MANUFACTURED WITH REDUCED NUMBER OF MASKS BY FA...
Publication number
20020030224
Publication date
Mar 14, 2002
FWU-IUAN HSHIEH
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Devices and methods for addressing optical edge effects in connecti...
Publication number
20020008281
Publication date
Jan 24, 2002
Fwu-Iuan Hshieh
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Semiconductor device packaging assembly and method for manufacturin...
Publication number
20020000647
Publication date
Jan 3, 2002
Max Chen
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Trench DMOS transistor having a double gate structure
Publication number
20010023961
Publication date
Sep 27, 2001
Fwu-Iuan Hshieh
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
TRENCHED DMOS DEVICE WITH LOW GATE CHARGES
Publication number
20010003367
Publication date
Jun 14, 2001
FWU-IUAN HSHIEH
H01 - BASIC ELECTRIC ELEMENTS