Yasunobu Kosa

Person

Kodaira, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor memory device and a method of manufacturing the same
- Patent number 4,926,222
- Issue date May 15, 1990
- Hitachi, Ltd.
- Yasunobu Kosa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor memory device
- Patent number 4,818,718
- Issue date Apr 4, 1989
- Hitachi, Limited
- Yasunobu Kosa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated circuit device and method of manufacturing...
- Patent number 4,764,479
- Issue date Aug 16, 1988
- Hitachi, Limited
- Yasunobu Kosa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming memory transistors with varying gate oxide thicknesses
- Patent number 4,651,406
- Issue date Mar 24, 1987
- Hitachi, Ltd.
- Shinji Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated circuit device with memory MISFETS and thi...
- Patent number 4,471,373
- Issue date Sep 11, 1984
- Hitachi, Ltd.
- Shinji Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device
- Patent number 4,451,904
- Issue date May 29, 1984
- Hitachi, Ltd.
- June Sugiura
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device with peripheral circuits
- Patent number 4,426,764
- Issue date Jan 24, 1984
- Hitachi, Ltd.
- Yasunobu Kosa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor integrated circuit device
- Patent number 4,373,249
- Issue date Feb 15, 1983
- Hitachi, Ltd.
- Yasunobu Kosa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing complementary insulated gate field effect...
- Patent number RE31079
- Issue date Nov 16, 1982
- Hitachi, Ltd.
- Kouichi Nagasawa
- 029 - Metal working
Information Patent Grant
Method of fabricating a mis-type device by using a gate electrode a...
- Patent number 4,356,041
- Issue date Oct 26, 1982
- Hitachi, Ltd.
- Yasunobu Kosa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interconnection structure for semiconductor integrated circuits
- Patent number 4,199,778
- Issue date Apr 22, 1980
- Hitachi, Ltd.
- Toshiaki Masuhara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing complementary insulated gate field effect...
- Patent number 4,110,899
- Issue date Sep 5, 1978
- Hitachi, Ltd.
- Kouichi Nagasawa
- H01 - BASIC ELECTRIC ELEMENTS

Yasunobu Kosa

Person

Patents Grantslast 30 patents

Semiconductor memory device and a method of manufacturing the same

Method of manufacturing semiconductor memory device

Semiconductor integrated circuit device and method of manufacturing...

Forming memory transistors with varying gate oxide thicknesses

Semiconductor integrated circuit device with memory MISFETS and thi...

Semiconductor memory device

Semiconductor memory device with peripheral circuits

Method of manufacturing a semiconductor integrated circuit device

Method for manufacturing complementary insulated gate field effect...

Method of fabricating a mis-type device by using a gate electrode a...

Interconnection structure for semiconductor integrated circuits

Method for manufacturing complementary insulated gate field effect...